21Z8
Abstract: 331Z 221Z
Text: SILICON DIFFUSED JUNCTION TYPE ZENER DIODE 1Z6.21Z390 1Z6.8A1Z30A APPLICATIONS: • CONSTANT VOLTAGE REGULATION • TRANSIENT SUPPRESSORS FEATURES: • Average Power Dissipation : P=1W • Peak Reverse Power Dissipation : P r SM=200W at tw=200ys • Zener Voltage
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21Z390
8A1Z30A
200ys
1Z390
1Z30A
21Z8
331Z
221Z
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THM365120AS80
Abstract: tc51256t THM365120 TC51256
Text: TOSHIBA MOS MEMORY PRODUCTS THM365120AS-70, 80, 10 description] The TKM365120AS is a 524,288 words by 36 bits dynamic RAM module which assembled 16 pcs of TC514256AJ and 8 pcs of TC51256T on both sides the printed circuit board. The THM365120AS is optimized for application to the system which are required
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THM365120AS-70,
TKM365120AS
TC514256AJ
TC51256T
THM365120AS
THM365120AS-70
THM365120AS-80
THM365120AS-10
100ns
130ns
THM365120AS80
THM365120
TC51256
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MOS MEMORY PRODUCTS TC521OOOP/J 1MBit 256K X 4 Field Memory PRELIMINARY DESCRIPTION The TC521000P/J is a CMOS 1Mbit Field Memory organized as 256K words by 4 bits, and features separate inputs/outputs, each equipped with an 8 bit serial shift register (32K
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TC521OOOP/J
TC521000P/J
33MHz
TC521000P/J.
TC521060P/J
DIP40-P-600
U-25-QQ5
63SMIN
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Untitled
Abstract: No abstract text available
Text: TOSHIBA _ MEMORY _ E lectronic C omponents B usiness S ector _ 4,194,304 W O R D X 1 B IT D Y N A M IC RAM T C 5 1 4 1 0 1 J/ Z -8 0 T C 5 1 4 1 0 1 J / Z -1 0 DESCRIPTION The TC514101J/Z is the new generation dynamic RAM organized 4,194,304 words by 1
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TC514101J/Z
MST-W-0030
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programmable Sine Wave Generator Frequency Generator
Abstract: Programmable Sine Wave Generator mtron crystal oscillator 24 MHz
Text: 3 ^ M ic r o U February 1997 PRELIMINARY n e a r ML2037 500kHz, Serial Input, Programmable Sine Wave Generator with Digital Gain Control GENERAL DESCRIPTION FEATURES The ML2037 is a programmable sine wave generator with a frequency range of DC to 500kHz. No external
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ML2037
500kHz,
ML2037
500kHz.
16-bit
ML2037CP
programmable Sine Wave Generator Frequency Generator
Programmable Sine Wave Generator
mtron crystal oscillator 24 MHz
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TC511000AJ
Abstract: tc511000
Text: THM91010AS-70, 80, 10 ¡d e s c r i p t i o n The THM91010AS is 9 pcs of TC511000AJ on The THM91010AS is high density and large memory systems, and to a 1,048,576 words by 9 bits dynamic RAM module which assembled the printed circuit board. optimized for application to the systems which are required
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THM91010AS-70,
THM91010AS
TC511000AJ
THM91010AS-70
130ns
THM91010AS-80
150ns
THM91010AS-10
100ns
tc511000
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TC514101J
Abstract: Z80 INTERFACING TECHNIQUES
Text: 4,194,304 WORD x 1 BIT DYNAMIC RATI * This is advanced information and specifications are subject to change without notice. DESCRIPTION The TC514101J/Z is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514101J/Z utilizes TOSHIBA* s CMOS Silicon gate process technology as well
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TC514101J/Z
TC514101J/Z.
TC514101
TC514101J
Z80 INTERFACING TECHNIQUES
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E1338
Abstract: No abstract text available
Text: IBM11J8360DL 8M X 36 5.0V IC D R A M C ard Features • Industry S tan dard 8 8 P in IC D R A M Card • Single 5.0V , ± 0 .2 5 V P ow er S u pply • Perform ance: • All inputs buffered excep t R A S and DATA inputs • Multiple R A S inputs for x l 8 or x 3 6 selectabiiity
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IBM11J8360DL
130ns
64G1726
MMDI21DSU-00
E1338
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TH-Q5401-A1
Abstract: quantum well
Text: TH-Q5401-A1 100W QUASI-CW LINEAR BAR ARRAYS 940-980 nm DESCRIPTION The TH-Q5401-A1 products are a high optical power laser diode sources for quasi-CW operation, the peak optical power is 100W. These products are based upon MOCVD quantum well design to realize highly efficient 1cm linear bar arrays.The
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TH-Q5401-A1
TH-Q5401-A1
js/100H
980nm
8019-ed2
quantum well
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Z80 CRT
Abstract: 50n8 Z80 CRT controller Z80 application note dynamic ram
Text: T C 5 1 4 1 0 1 J / Z - 8 0 T C 5 1 4 1 0 1 J / Z - 1 0 4,194,304 WORD x 1 BIT DYNAMIC RAM * This is advanced information and specifications are subject to change without notice. DESCRIPTION The TC514101J/Z is the new generation dynamic RAM organized 4,194,304 words by 1
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TC514101J/Z
TC514101J/Z.
TC514101J/Z-80
TC514101J/Z-10
Z80 CRT
50n8
Z80 CRT controller
Z80 application note dynamic ram
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a-243
Abstract: AZ60
Text: 4,194,304 WORD x 1 BIT DYNAMIC RAM * This is advanced information and specifica tions are subject to change without notice. DESCRIPTION The TC514102AP/AJ/ASJ/AZ is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514102AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as
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TC514102AP/AJ/ASJ/AZ
300/350mil)
ofTC514102AP/AJ/ASJ/AZ.
TC514102AP/AJ/ASJ/AZ-60
a-243
AZ60
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TMM-9
Abstract: HM9100 TC511000AJ THM91020AL-80
Text: THM91OOOAS/AL-70, 80, 10 THM91021AL-70, 80, 10 Id e s c r i p t i o n ! The THM91000AS/AL 9 pcs of TC511000AJ on The THM91000AS/AL high density and large memory systems, and to is a 1,048,576 words by 9 bits the printed circuit board. is optimized for application to
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THM91OOOAS/AL-70,
THM91021AL-70,
THM91000AS/AL
TC511000AJ
1020AL
/////////////77Th:
THM91000AS/AL-70,
THM91021A
THM91000AS
TMM-9
HM9100
THM91020AL-80
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MOS MEMORY PRODUCTS TNM91010AS-70, 80, 10 [d e s c r i p t i o n ! The THM91010AS is 9 pcs of TC511000AJ on The THM91010AS is high density and large memory systems, and to a 1,048,576 words by 9 bits dynamic RAM module which assembled the printed circuit board.
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TNM91010AS-70,
THM91010AS
TC511000AJ
THM91010AS-70
130ns
THM91010AS-80
150ns
THM91010AS-10
100ns
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tc511000
Abstract: TH021 th-021a
Text: TOSHIBA MOS MEMORY PRODUCTS THM91000AS/AL-70, 80, 10 THM91021AL-70, 80, 10 IDESCRI PTI0Ñ1 The THM91000AS/AL 9 pcs of TC511000AJ on The THM91000AS/AL high density and large memory systems, and to is a 1,048,576 words by 9 bits dynamic RAM module which assembled
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THM91000AS/AL-70,
THM91021AL-70,
THM91000AS/AL
TC511000AJ
THM91000AS/AL,
THM91020AL
TflM91021AL
THM91000AS
tc511000
TH021
th-021a
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m4512
Abstract: HYM59256AM
Text: HYUNDAI 3TE ELECTRONI CS » m 4b750flö Ü0 0 Q3 7 Ô T •HYNK 256KX 9-Bit CMOS DRAM MODULE M451201A-APR9T DESCRIPTION FEATURES The HYM59256A is a 256K words by 9bits dynamic RAM m odule and consists o f Fast Page mode CM OS DRAMs of two HY534256J in 20/26 pin SOJ and one HY53C256LF in 18
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4b750flö
256KX
M451201A-APR9T
HYM59256A
HY534256J
HY53C256LF
22\sF
HYM59256AM
HYM59256AP
HYM59256A-70
m4512
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MAX662ACPA
Abstract: No abstract text available
Text: >kiyjxi>M +12V, 30m A Flash M em ory Program m ing Supply The MAX662A is the first charge-pum p boost converter to provide a regulated +12V output. It requires only a few inexpensive capacitors, and the entire circuit is complete ly surface-mountable. _ Fea tures
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MAX662A
30mA-output,
MAX662,
AX662A
AX662A
184mm)
MAX662ACPA
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tc511000
Abstract: tc511000aj TC511000A THM91010AS-10 THM91010AS-70 THM91010AS-80 THM9101QAS-70 KA527
Text: ü w TOSHIBA MOS MEMORY PRODUCTS THM91010AS-70, 80, 10 IDESCRIPTIOHI The THM91010AS is 9 pcs of TC511000AJ on The THM91010AS is high density and large memory systems, and to a 1,048,576 words by 9 bits dynamic RAM module which assembled the printed circuit board.
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THM91010AS-70,
THM91010AS
TC511000AJ
THM91010AS-70
THM91010AS-80
THM91010AS-10
100ns
130ns
150ns
tc511000
TC511000A
THM91010AS-10
THM9101QAS-70
KA527
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LCSC 24
Abstract: TC514102J
Text: TOSHIBA MEMORY E lectronic C omponents B usiness Sector 4 ,1 9 4 ,3 0 4 WORD X 1 BIT DYNAMIC RAM T C 5 1 41 0 2 J/Z-80 T C 5 1 41 0 2 J/Z-10 DESCRIPTION The TC514102J/Z is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514102J/Z utilizes TOSHIBA'S CMOS Silicon gate process technology as well
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TC514102
J/Z-80
TC514102J/Z-10
TC514102J/Z
LCSC 24
TC514102J
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Z80 INTERFACING TECHNIQUES
Abstract: Z80 RAM TC514100
Text: * This is advanced information and specifications 4,194,304 WORD ;• 1 BIT DYNAMIC RAM are subject to change without notice. DESCRIPTION The TC514100J/Z is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514100J/Z utilizes TOSHIBA'S CMOS Silicon gate process technology as well
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TC514100J/Z
TC514100J/Z.
TC5141
Z80 INTERFACING TECHNIQUES
Z80 RAM
TC514100
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Untitled
Abstract: No abstract text available
Text: Ipil 4,194,304 WORD x 1 BIT DYNAMIC RAM * This is advanced information and specifications are subject to change without notice. DESCRIPTION The TC514102J/Z is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514102J/Z utilizes TOSHIBA'S CMOS Silicon gate process technology as well
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TC514102J/Z
TC514102J/Z.
TC514102
TC514102J/Zâ
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MOS MEMORY PRODUCTS THM91020L-85, 10, 12 'd e s c r i p t i o n ! The THM91 0 20L is a 1,048,576 words by 9 bits dynamic RAM module which assembled pcs of TC511 0 00J on b oth sides of the printed circuit board. The T H M 9 1 0 20L is optimized for application to the systems wh i c h are required high
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THM91020L-85,
THM91
TC511
THM91020L-85
THM91020L-199
C-200
C-202
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PDF
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Untitled
Abstract: No abstract text available
Text: IMAGE UNAVAILABLE THM81022L-85, 10, 12 ISLOCK DIAGRAM DQ.0 O- D a DQ.4 O- q. d A0-A9 A0~A9 flA£» RÂB CS US raiTE w&I’ÎE -II- DQ.1 O- DQ.5 O- D Q, A0~A9 A0-A9 ISs os' EÂ3CÏÏ WHITE WRITE “i h DQ.2 O- ii q, EQ6 O- AO-A 9 D C. A0-A9 Has 35 cs V/P.ITS
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THM81022L-85,
C-118
THM810221-85,
THNI81022L-85,
THM81022L
C-128
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MOS MEMORY PRODUCTS THM 91022L-85, 10 , 12 [description ! The THM91022L is a 1,048,576 w o r d s b y 9 bits dynamic R A M m o d u l e w h i c h assembled 9 pcs of TC511002J on b o t h sides of the printed circuit board. The THM91022L is optimized for a p plication to the systems w h i c h are required
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91022L-85,
THM91022L
TC511002J
THM91022L-85
THM91022L-10
THM91022L-12
100ns
C-228
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PDF
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Z80 INTERFACING TECHNIQUES
Abstract: TC514102J t-rcj
Text: i 4,194,304 WORD x 1 BIT DYNAMIC RAM * This is advanced information and specifications are subject to change without notice, DESCRIPTION The TC514102J/Z is the new generation dynamic RAM organized 4,194,304 wo r d s b y 1 The TC514102J/Z utilizes T O S H I B A ’S CMOS Silicon gate process technology as well
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TC514102J/Z
TC5141Q2J/Z
TC514102J/Z.
TC514102
TC514102J/Z-10
Z80 INTERFACING TECHNIQUES
TC514102J
t-rcj
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