Untitled
Abstract: No abstract text available
Text: POWER OPERATIONAL AMPLIFIER PA17 M I C R O T E C H N O L O G Y HTTP://WWW.APEXMICROTECH.COM 800 546-APEX (800) 546-2739 FEATURES • HIGH INTERNAL DISSIPATION — 600 WATTS • HIGH VOLTAGE, HIGH CURRENT — 200V 50A CONTINUOUS, 80A PULSE • HIGH SLEW RATE — 50V/µS
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546-APEX
PA17U
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SONAR 850 alarm
Abstract: PA17 850W
Text: POWER OPERATIONAL AMPLIFIER PA17 M I C R O T E C H N O L O G Y HTTP://WWW.APEXMICROTECH.COM FEATURES 800 546-APEX (800) 546-2739 PRELIMINARY • HIGH INTERNAL DISSIPATION — 850 WATTS • HIGH VOLTAGE, HIGH CURRENT — 200V 50A CONTINUOUS, 100A PULSE • HIGH SLEW RATE — 50V/µS
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546-APEX
PA17U
SONAR 850 alarm
PA17
850W
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irf 100v 200A
Abstract: irf 345 irg4pc50sdpbf C-150
Text: PD - 97316 IRG4PC50SDPbF Standard Speed CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Standard: Optimized for minimum saturation voltage and low operating frequencies <1kHz IGBT co-packaged with HEXFREDTM ultrafast,
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IRG4PC50SDPbF
O-247AC
irf 100v 200A
irf 345
irg4pc50sdpbf
C-150
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IGBT 200V 50A
Abstract: No abstract text available
Text: PD - 97316 IRG4PC50SDPbF Standard Speed CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Standard: Optimized for minimum saturation voltage and low operating frequencies <1kHz IGBT co-packaged with HEXFREDTM ultrafast,
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IRG4PC50SDPbF
O-247AC
IGBT 200V 50A
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RUFD
Abstract: SGL50N60RUFD
Text: IGBT SGL50N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's Insulated Gate Bipolar Transistor IGBT RUFD series provides low conduction and switching losses as well as short circuit ruggedness. RUFD series is designed for the applications such as motor control, UPS and general
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SGL50N60RUFD
O-264
RUFD
SGL50N60RUFD
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RUFD
Abstract: SGL50N60RUFD
Text: SGL50N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's RUFD series of Insulated Gate Bipolar Transistors IGBTs provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control,
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SGL50N60RUFD
O-264
RUFD
SGL50N60RUFD
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Untitled
Abstract: No abstract text available
Text: SGL50N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's RUFD series of Insulated Gate Bipolar Transistors IGBTs provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control,
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SGL50N60RUFD
O-264
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AN9020
Abstract: RUFD Fairchild 9020 IGBT 100A
Text: SGL50N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's RUFD series of Insulated Gate Bipolar Transistors IGBTs provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control,
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PDF
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SGL50N60RUFD
O-264
SGL50N60RUFD
SGL50N60RUFDTU
SGL50N60RUFDGTU
O-264
AN-9020:
AN-9020
AN9020
RUFD
Fairchild 9020
IGBT 100A
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PA30U
Abstract: SCHEMATIC 8000w Power Amplifier PA30 S1000 VB-12 1000W mosfet 2000w power amplifier e180 cc APEX A75
Text: FEATURES • OUTPUT POWER 2000W CONT, 8000W PULSE • NO SECOND BREAKDOWN, MOSFET OUTPUT • l0 = 50A CONTINUOUS, 100A PULSE • WIDE SUPPLY RANGE, 30V to 200V • 45 V/ns TYPICAL SLEW RATE • VERSATILE PROGRAMMABLE CURRENT LIMIT • THERMAL PROTECTION, OVERTEMP OUTPUT
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546-APEX
PA30U
SCHEMATIC 8000w Power Amplifier
PA30
S1000
VB-12
1000W mosfet
2000w power amplifier
e180 cc
APEX A75
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Untitled
Abstract: No abstract text available
Text: 100 AM P ER ES P T -3 5 2 0 ULTRA FAST SWITCHING SILICON IMPIM TRANSISTOR SYMBOL PT-3520 Col lector-Base Voltage VCBO 300V Collector-Emitter Voltage VCEO 200V Emitter-Base Voltage VEBO 10V Peak Collector Current 'C M * D. C. Collector Current •c 50A Power Dissipation at 25°C Case Temperature
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PT-3520
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soc 117a
Abstract: 2N6277 equivalent 2N6215 2N6277 2N6279 SDT79823 POWER TRANSISTOR PNP 20a 80v TO-3
Text: Contran [^ ©tUKSTT © Ä¥ÄIL MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER IMPIM EPITAXIAL PLANAR POWER TRANSISTOR* (FORMERLY 79 ¿1 CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)
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305mm)
soc 117a
2N6277 equivalent
2N6215
2N6277
2N6279
SDT79823
POWER TRANSISTOR PNP 20a 80v TO-3
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2N6277 equivalent
Abstract: Transistor PnP 200V 20A Solitron Devices SOLITRON 179 2N6279
Text: SOLITRO N DEVICES INC TS DEyfl3bflb0a OOOSfiS^ Q f ° [FIEiODOJ ? ©ATM. ® Devices. Inc. M EDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP N U M BER N PN EPITAXIAL PLANAR POWER TRANSISTOR* FORMERLY 79) CONTACT METALLIZATION B ase and emitter: > 50,000 A Aluminum
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305mm)
a2N6279,
SDT79823,
2N6215
2N6277 equivalent
Transistor PnP 200V 20A
Solitron Devices
SOLITRON 179
2N6279
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Untitled
Abstract: No abstract text available
Text: 100 AMPERES P T -3 5 2 0 ULTRA FAST SWITCHING SILICON NPN TRANSISTOR SYMBOL PT-3520 Collector-Base Voltage VCBO 300V Collector-Emitter Voltage VCEO 200V Emitter-Base Voltage VEBO 10V Peak Collector Current •CM* D. C. Collector Current Power Dissipation at 25°C Case Temperature
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PT-3520
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pt7511
Abstract: No abstract text available
Text: “BIG IDEAS IN BIG POWER” H i • PowerTech 90 A M P E R E S PT-7511 SILICON IMPIN I TRANSISTOR MAXIMUM RATINGS SYMBOL Collector-Base Voltage V CBO Collector-Emitter Voltage V CEO Emitter-Base Voltage V EBO Peak Collector Current 'c m * D.C. Collector Current
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PT-7511
pt7511
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PowerTech
Abstract: 200V 50A TRANSISTOR PT-7511 pt7511
Text: 17E D 7 2 ^ û 7 t.4 □□□□301 •i “BIG IDEAS IN BIG POWER" 1 ■ PowerTech PObJERTECH INC 90 AMPERES P T - y 5 ii SILICON IMPIM TRANSISTOR M A X IM U M R A T IN G S SYM BOL Collector-Base Voltage V CBO Collector-Emitter Voltage V CEO Emitter-Base Voltage
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pt-7511
200mA,
100KHz
300ps.
791-5D5Ã
PowerTech
200V 50A TRANSISTOR
PT-7511
pt7511
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powertech
Abstract: No abstract text available
Text: BIG IDEAS ii* BIG POWER" • PowerTech SO AMPERES P T - 'Z S H SILICaiM NPN TRANSISTOR MAXIMUM RATINGS SYMBOL Collector-Base Voltage V CBO C o llecto r-E m itte r Voltage V CEO Emitter-Base Voltage V EBO Peak C ollector C urrent 'c m * D.C. C ollector C urrent
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PT-7511
PT-7511
powertech
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Untitled
Abstract: No abstract text available
Text: SEMELAB LTD 3 7E D • Ô1331Ô7 SEMELAB JUL 0 6 ¡988 BUS 51 NPN MULTI-EPITAXIAL POWER TRANSISTOR Suitable for low voltage, high speed, power switching MECHANICAL DATA Dimensionsinmm FEATURES • LOW Vce sat * • 1-6 • FAST SWITCHING • HIGH SWITCHING CURRENTS
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D00D173
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HI 3520
Abstract: Q741D IC-50A npn 200w NPN transistor Ic 50A PT-3520 powertech
Text: 17E D • DOGOaST 1 ■ “BIG IDEAS IBI BIG POWER" H i PowerTecn POIiJERTECH INC ■ 100 AMPERES PT-3520 T -3 S -IS ULTRA FAST SWITCHING SILICON NPN TRANSISTOR ABSOLUTE MAXIMUM RATINGS SYMBOL PT-3520 Collector-Base Voltage VCBO 300V Collector-Emitter Voltage
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T-35-is
PT-3520
Q741D
HI 3520
Q741D
IC-50A
npn 200w
NPN transistor Ic 50A
PT-3520
powertech
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Untitled
Abstract: No abstract text available
Text: ^otttran Devices. Inc MEDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN EPITAXIAL PLANAR POWER TRANSISTOR* * FORMERLY 79 CONTACT METALLIZATION B a se a n d em itter: > 50,000 A A lum inu m C ollector: G o ld (P o lish e d silico n or "C h ro m e N ickel S i lv e r " also a v a ila b le )
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305mm)
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BUX22 equivalent
Abstract: SDT96306
Text: at SOLITRON DEVICES INC 7" - 7 j - o r FË^fl3t.at.05 oooasTa 3 I " - ELEMENT NUMBER MEDIUM TO HIGH VOLTAGE, HIGH CURRENT NPN EPITAXIAL PLANAR POWER TRANSISTOR * FORMERLY 96 CONTACT METALLIZATION Base and emitter: > 5 0 .0 0 0 Â Aluminum Collector: Polished Silicon
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88mmX9
305mm)
15MHz
15MHz
800pF
BUX22 equivalent
SDT96306
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transistor 05c
Abstract: 800PF 2N6325 SDT96301 SDT96308 8A550A
Text: ^/olitron [p|£ì |D lJ)(ST Ä T Ä IL © ( M EDIUM TO HIGH VOLTAGE, HIGH CURRENT Devices. Inc. CHIP NUM BER NPN EPITAXIAL PLANAR POWER TRANSISTOR (FORMERLY 96) cf] CONTACT METALLIZATION A Base and emitter: > 50,000 Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)
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305mm)
transistor 05c
800PF
2N6325
SDT96301
SDT96308
8A550A
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transistor PT 4500
Abstract: No abstract text available
Text: 17 E D • TS'JÛTbM □□□□331 T POliJERTECH INC "BIG IDEAS IN BIG POWER” ■ PowerTecri 150AMPERES PT-4500 T-SVIS HIGH VOLTAGE SILICON NPN TRANSISTOR FEATURES V c E s a t . 0.75 @ 100 A hF E .
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PT-4500
300/Ltsec
100/iA
transistor PT 4500
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SDT96308
Abstract: sdt96
Text: Contran MEDIUM TO HIGH VOLTAGE, HIGH CURRENT CHIP NUMBER Devices. Inc. NPN EPITAXIAL PLAIMAR POWER TRANSISTOR FORMERLY 96 CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)
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305mm)
cont10V
800pF
800pF
JAN2N5250,
JAN2N5251,
SDT96308
sdt96
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NPN Transistor 50A 400V
Abstract: SDT99504 SDT99704 SDT99904 TO114 400v 50A Transistor
Text: -JButron Devices. Inc. MEDIUM TO HIGH VOLTAGE, HIGH CURRENT CHIP NUMBER NPN EPITAXIAL PLANAR POWER TRANSISTOR ¿1 CONTACT METALLIZATION Base and emitter. > 50,000 A Aluminum Collector: Gold Polished silicon or "Chrome Nickel Silver" also available Also available on:
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470mm
938mm
938mm)
508mm)
700mm)
524mm)
203mm)
O-114
10MHz
1200pF
NPN Transistor 50A 400V
SDT99504
SDT99704
SDT99904
TO114
400v 50A Transistor
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