Untitled
Abstract: No abstract text available
Text: S3 A315 Series 3A, 50V - 200V Ultrafast Diodes December 1993 Package Features AL-4 • Glass Passivated Junction TOP VIEW • Ultra-Fast Recovery Times • Low Forward Voltage Drop, High-Current Capability • Low Leakage Current ANODE • High Surge Current Capability
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OCR Scan
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A315A,
A315B,
A315F,
A315G
50/100NS/CM)
25VDC
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PDF
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A315A
Abstract: A315B A315 A315F A315G
Text: HARRIS SEMICON» SECTOR bflE D 33 HB H3Ü2271 A315 Series 3A, 50V - 200V Ultrafast Diodes December 1993 Features • 0050333 0=10 H H A S Package AL-4 Glass Passivated Junction TOP VIEW • Ultra-Fast Recovery Times • Low Forward Voltage Drop, High-Current Capability
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OCR Scan
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A315A,
A315B,
A315F,
A315G
50/100NS/CM)
25VDC
A315A
A315B
A315
A315F
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PDF
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TO-220FN
Abstract: RF diodes TO220FN 10na RF2001T2D RF1001T2D common anode fast
Text: RF 1series Diodes Fast recovery Diodes Silicon Epitaxial Planar RF 1 series zExternal dimensions (Unit : mm) zApplications High frequency rectification CPD 5.5 1.5 2.3 0.5 5.6 5.5 zFeatures 1) Ultra low VF very fast recovery 2) Fast recovery 3) Low switching loss
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Original
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O-220FN,
O-220FN
Fa301B2S
RF501B2S
RF601B2D
RF601T2D
RF1001T2D
RF1601T2D
RF2001T2D
TO-220FN
RF diodes
TO220FN
10na
common anode fast
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PDF
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TO-220FN
Abstract: LOW LOSS FAST RECOVERY DUAL DIODES RF603B2D TO220FN 220FN RF073M2S RF1003T2D RF103L2S RF303B2S RF503B2S
Text: RF 3series Diodes Fast recovery Rectifier Diodes Silicon Epitaxial Planar RF 3 series zExternal dimensions (Unit : mm) zApplications High frequency rectification CPD 5.5 1.5 2.3 0.5 5.6 5.5 zFeatures 1) Very fast recovery 2) Low VF 3) Low switching loss
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Original
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O-220FN,
O-220FN
RF303B2S
RF503B2S
RF603B2D
RF603T2D
RF1003T2D
TO-220FN
LOW LOSS FAST RECOVERY DUAL DIODES
RF603B2D
TO220FN
220FN
RF073M2S
RF1003T2D
RF103L2S
RF303B2S
RF503B2S
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PDF
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RF071M2S
Abstract: RF1001T2D RF101L2S RF1601T2D RF2001T2D RF301B2S RF501B2S RF601B2D RF601T2D TO-220FN
Text: RF 1series Diodes Fast recovery Diodes Silicon Epitaxial Planar RF 1 series zExternal dimensions (Unit : mm) zApplications High frequency rectification CPD 5.5 1.5 2.3 0.5 5.6 5.5 zFeatures 1) Ultra low VF very fast recovery 2) Fast recovery 3) Low switching loss
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Original
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O-220FN,
O-220FN
RF071M2S
RF1001T2D
RF101L2S
RF1601T2D
RF2001T2D
RF301B2S
RF501B2S
RF601B2D
RF601T2D
TO-220FN
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PDF
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D-PACK
Abstract: RF073M2S RF1003T2D RF103L2S RF303B2S RF503B2S RF603B2D RF603T2D TO-220FN Reverse voltage repetitive peak VRM 60 V application notes frd
Text: RF 3series Diodes Fast recovery Rectifier Diodes Silicon Epitaxial Planar RF 3 series zExternal dimensions (Unit : mm) zApplications High frequency rectification CPD 5.5 1.5 2.3 0.5 5.6 5.5 zFeatures 1) Very fast recovery 2) Low VF 3) Low switching loss
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Original
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O-220FN,
O-220FN
D-PACK
RF073M2S
RF1003T2D
RF103L2S
RF303B2S
RF503B2S
RF603B2D
RF603T2D
TO-220FN Reverse voltage repetitive peak VRM 60 V
application notes frd
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PDF
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Transistor RKU
Abstract: 200v 3A ultra fast recovery diode K4M diode ULTRA fast rectifier diode 30A 200V cathode common
Text: PD-2.336 Provisional Data Sheet International IORIRectifier HEXFRED HFA30PA60C ULTRA FAST, SOFT RECOVERY DIODE Major Ratings and Characteristics per Leg Characteristics Units VR Vr r m 600 V lF(AV) 15 A trr (typ) 19 ns Qrr (typ) 80 nC Ir r m 6 A di(rec)M/dt (typ)
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OCR Scan
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HFA30PA60C
HFA30PA60C
Employ90745
Transistor RKU
200v 3A ultra fast recovery diode
K4M diode
ULTRA fast rectifier diode 30A 200V cathode common
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PDF
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HFA25PB60
Abstract: IRFP250
Text: PD -2.338 HFA25PB60 HEXFRED Ultrafast, Soft Recovery Diode TM Features Ultrafast Recovery Ultrasoft Recovery Very Low IRRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits Reduced RFI and EMI Reduced Power Loss in Diode and Switching
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HFA25PB60
112nC
HFA25PB60
IRFP250
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PDF
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200v 3A ultra fast recovery diode
Abstract: VR150A
Text: RF601T2D Data Sheet Fast recovery diode RF601T2D Applications General rectification Dimensions Unit : mm Structure 4.5±0.3 0.1 Features 1) Cathode common type.(TO-220) 2) Ultra Low V F 2.8±0.2 0.1 8.0±0.2 12.0±0.2
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Original
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RF601T2D
O-220)
O220FN
60Hz/1cyc)
200pF
100pF
R1120A
200v 3A ultra fast recovery diode
VR150A
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PDF
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200v 3A ultra fast recovery diode
Abstract: RF601T
Text: Data Sheet Fast recovery diode RF601T2D Applications General rectification Dimensions Unit : mm Structure 4.5±0.3 0.1 Features 1) Cathode common type.(TO-220) 2) Ultra Low V F 2.8±0.2 0.1 8.0±0.2 12.0±0.2
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Original
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RF601T2D
O-220)
O220FN
60Hz/1cyc)
200pF
100pF
R1120A
200v 3A ultra fast recovery diode
RF601T
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PDF
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NTE588
Abstract: No abstract text available
Text: NTE588 Silicon Diode 200V, 3A, Ultra Fast Switch Features: D High Reliability D Low Leakage D Low Forward Voltage D High Current Capbility D D D D Super Fast Switching Speed < 35nS High Surge Capability High Surge Capability Good for 200kHz Power Supplier
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Original
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NTE588
200kHz
155pF
NTE588
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PDF
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HFA30PA60C
Abstract: IRFP250 irf 44 ns
Text: PD -2.336 rev. A 04/98 HFA30PA60C HEXFRED Ultrafast, Soft Recovery Diode TM Features Ultrafast Recovery Ultrasoft Recovery Very Low I RRM Very Low Qrr Guaranteed Avalanche Specified at Operating Conditions Benefits Reduced RFI and EMI
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Original
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HFA30PA60C
HFA30PA60C
IRFP250
irf 44 ns
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PDF
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Untitled
Abstract: No abstract text available
Text: Data Sheet Fast Recovery Diode RF301B2S Applications General rectification Dimentions Unit : mm Land size figure(Unit : mm) 6.0 6.0 1.6 1.6 Features 1)Power mold type(CPD) 2)Ultra Low VF 3)Very fast recovery 4)Low switching loss
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Original
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RF301B2S
SC-63
200pF
100pF
R1120A
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PDF
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Untitled
Abstract: No abstract text available
Text: FAST RECOVERY DIODE C6P10F C6P20F F6P10F F6P20F 6.6A/100'-~200V/trr : 30nsec FEATURES ° Similar to T0-220AB Case °Fully Mold Isolation F-Type ° Dual Diodes - Cathode Common ° Ultra - Fast Recovery ° Low Forward Voltage Drop ° High Surge Capability
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OCR Scan
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C6P10F
C6P20F
F6P10F
F6P20F
A/100
00V/trr
30nsec
T0-220AB
C6P10F
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PDF
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fast recovery diode
Abstract: No abstract text available
Text: Data Sheet Fast Recovery Diode RF301B2S Applications General rectification Dimentions Unit : mm Land size figure(Unit : mm) 6.0 6.0 1.6 1.6 Features 1)Power mold type(CPD) 2)Ultra Low VF 3)Very fast recovery 4)Low switching loss
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Original
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RF301B2S
SC-63
200pF
100pF
R1120A
fast recovery diode
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PDF
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500W TRANSISTOR AUDIO AMPLIFIER
Abstract: IN5822 diode irfs6408 220V ac to 9V dc converter circuit DC 48v AC 220v 500w smps P-Channel MOSFET 800v SB550 transistor drive motor 10A with transistor P channel MOSFET P channel 600v 20a IGBT list of n channel power mosfet
Text: Power for Computing Analog Discrete Interface & Logic Power Solutions for • Conversion · Distribution · Management · Minimization There’s a lot more to power than power management. Optimizing system power in computing applications requires innovative products for power conversion, distribution,
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Power247TM,
500W TRANSISTOR AUDIO AMPLIFIER
IN5822 diode
irfs6408
220V ac to 9V dc converter circuit
DC 48v AC 220v 500w smps
P-Channel MOSFET 800v
SB550 transistor
drive motor 10A with transistor P channel MOSFET
P channel 600v 20a IGBT
list of n channel power mosfet
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PDF
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0C28
Abstract: 200v 3A ultra fast recovery diode 6VF20CTF 40 hmr 150 DIODE 6VF10CT 6VF10CTF 6VF20CT
Text: FAST RECOVERY DIODE 6VF10CT 6VF20CT 6VF10CTF 6VF20CTF 6.6A/100~200V/trr : 30nsec FEATURES 2.38MAX .094 2.38MAX (.094) ° TO-251AA'Case • TO-252AA Case, Surface Mount Device 0.9Í.035) NOMENAL 1_ ° Ultra - Fast Recovery ° Dual Diodes - Cathode Common
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OCR Scan
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A/100
00V/trr
30nsec
6VF10CT
6VF20CT
6VF10CTF
6VF20CTF
O-251AA
O-252AA
T0-252AA
0C28
200v 3A ultra fast recovery diode
6VF20CTF
40 hmr 150 DIODE
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PDF
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GE234
Abstract: No abstract text available
Text: MES1304 MES1305 MES1306 Microsemi Corp. ' The diode experts SANTA A N A . CA SCOTTSDALE, A Z F o r m ore in fo rm a tio n call: 7I4 9 7 9 -8 2 2 0 Ultra Fast Switching Rectifier FEATURES • M IC R O M IN IA TU R E PACK AGE f*— .040 NOM. DIA. \ i • VDIDLESS HERM ETICALLY SEALED G U S S PACKAGE
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OCR Scan
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MES1304
MES1305
MES1306
MES1301
MES1303
GE234
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PDF
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1451AQ
Abstract: No abstract text available
Text: / Microsemi Corp. M E S 1304 M E S 1305 M E S 1306 ’ The diode experts S A N T A A N A , CA F o r m o re in fo rm a tio n call: 714 9 7 9 -8 2 2 0 U ltra Fast S w itching R ectifier FEA TU RES • MICROMINIATURE PACKAGE • .040 NOM. DIA. • VOIDLESS HERMETICALLY SEALED GLASS PACKAGE
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OCR Scan
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PDF
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RF601T2D
Abstract: No abstract text available
Text: RF601T2D Diodes Fast recovery diode RF601T2D zApplications General rectification zExternal dimensions Unit : mm zStructure 4.5±0.3 0.1 zFeatures 1) Cathode common type. (TO-220) 2) Ultra Low VF 3) Very fast recovery 4) Low switching loss 2.8±0.2
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Original
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RF601T2D
O-220)
O220FN
60Hz1cyc
RF601T2D
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PDF
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RF601T2D
Abstract: No abstract text available
Text: RF601T2D Diodes Fast recovery diode RF601T2D zApplications General rectification zExternal dimensions Unit : mm zStructure 9.9 2.2 0.3 0.8 10.0 zFeatures 1) Cathode common type. (TO-220) 2) Ultra Low VF 3) Very fast recovery 4) Low switching loss 4.5±0.3
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Original
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RF601T2D
O-220)
O220FN
RF601T2D
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PDF
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Untitled
Abstract: No abstract text available
Text: bSE D INTERNATIONAL RECTIFIER • MflSSMSS 0017713 322 * I N R P D -2 .3 3 5 International S Rectifier HEXFRED Provisional Data Sheet HFA30TA60C ULTRA FAST, SOFT RECOVERY DIODE Major Ratings and Characteristics per diode C h a ra c te ris tic s 600 V
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OCR Scan
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HFA30TA60C
D-6380
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PDF
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Untitled
Abstract: No abstract text available
Text: RF601B2D Diodes Fast recovery diodes RF601B2D zExternal dimensions Unit : mm 6.5±0.2 5.1±0.2 0.1 zLand size figure (Unit : mm) 6.0 2.3±0.2 0.1 0.5±0.1 9.5±0.5 5.5±0.3 0.1 zFeatures 1) Power mold type. (CPD) 2) Ultra Low VF
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Original
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RF601B2D
SC-63
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PDF
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RF601T2D
Abstract: No abstract text available
Text: RF601T2D Diodes Fast recovery diode RF601T2D zApplications General rectification zDimensions Unit : mm zStructure 4.5±0.3 0.1 zFeatures 1) Cathode common type. (TO-220) 2) Ultra Low VF 3) Very fast recovery 4) Low switching loss 2.8±0.2 0.1
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Original
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RF601T2D
O-220)
O220FN
60Hz1cyc
RF601T2D
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PDF
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