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    200V 3A Search Results

    200V 3A Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    ADHV4702-1BCPZ Analog Devices 200V Precision Amplifier Visit Analog Devices Buy
    ADHV4702-1BCPZ-R7 Analog Devices 200V Precision Amplifier Visit Analog Devices Buy
    LT1351CS8#TRPBF Analog Devices 250µA, 3MHz, 200V/µsOp Amp Visit Analog Devices Buy
    LT1351CN8#PBF Analog Devices 250µA, 3MHz, 200V/µsOp Amp Visit Analog Devices Buy
    LT1351CMS8#TRPBF Analog Devices 250µA, 3MHz, 200V/µsOp Amp Visit Analog Devices Buy
    LT1351CS8#PBF Analog Devices 250µA, 3MHz, 200V/µsOp Amp Visit Analog Devices Buy
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    200V 3A Price and Stock

    Panasonic Electronic Components ERA-3AHD200V

    Thin Film Resistors - SMD 0603 20ohms 50ppm 0.5% AEC-Q200
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    Mouser Electronics ERA-3AHD200V 28,059
    • 1 $0.12
    • 10 $0.091
    • 100 $0.066
    • 1000 $0.038
    • 10000 $0.028
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    OMRON Corporation A4E-B200VA

    Basic / Snap Action Switches Enabling Switch
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    Mouser Electronics A4E-B200VA 23
    • 1 $88.18
    • 10 $77.17
    • 100 $62.83
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    OMRON Corporation A4E-B200VS

    Basic / Snap Action Switches 3 POS SAFETY SWITCH 2CO,v/mount,w/seal
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    Mouser Electronics A4E-B200VS
    • 1 $73.28
    • 10 $64.13
    • 100 $52.21
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    Trumeter Technologies TR3-U3A-0200V1QOC-F03

    Encoders 12" POLY 200 PPR 5-28VDC 36" CABLE
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    Mouser Electronics TR3-U3A-0200V1QOC-F03
    • 1 $1273.05
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    KEMET Corporation PEH200VO433AMU2

    Aluminum Electrolytic Capacitors - Screw Terminal 3300uF 400VDC 20% 65 X 105mm
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    Mouser Electronics PEH200VO433AMU2
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    200V 3A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1E14

    Abstract: 2E12 FSL230R4 JANSR2N7396 Rad Hard in Fairchild for MOSFET 5200BR
    Text: JANSR2N7396 Formerly FSL230R4 5A, 200V, 0.460 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N73 96 /Subject (5A, 200V, 0.460 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 5A, 200V, 0.460


    Original     		PDF JANSR2N7396 FSL230R4 R2N73 1E14 2E12 FSL230R4 JANSR2N7396 Rad Hard in Fairchild for MOSFET 5200BR

    IRF620 application

    Abstract: IRF620
    Text: IRF620 IRF620FP N-channel 200V - 0.6Ω - 6A TO-220/TO-220FP PowerMESH II Power MOSFET General features Type VDSS @Tjmax RDS(on) ID IRF620 200V <0.8Ω 6A IRF620FP 200V <0.8Ω 6A • Extremely high dv/dt capability ■ 100% avalanche tested ■ New high voltage benchmark


    Original     		PDF IRF620 IRF620FP O-220/TO-220FP O-220 O-220FP IRF620FP IRF620 application

    IRF620 application

    Abstract: IRF620 IRF620FP JESD97 Part Marking TO-220 STMicroelectronics
    Text: IRF620 IRF620FP N-channel 200V - 0.6Ω - 6A TO-220/TO-220FP PowerMESH II Power MOSFET General features Type VDSS @Tjmax RDS(on) ID IRF620 200V <0.8Ω 6A IRF620FP 200V <0.8Ω 6A • Extremely high dv/dt capability ■ 100% avalanche tested ■ New high voltage benchmark


    Original     		PDF IRF620 IRF620FP O-220/TO-220FP O-220 O-220FP IRF620 application IRF620 IRF620FP JESD97 Part Marking TO-220 STMicroelectronics

    Untitled

    Abstract: No abstract text available
    Text: S320 3A, 200V, Surface Mount Package Schottky Rectifier Features • • • • • Low Profile, Mini SurfaceMount Package: SMB / DO-214AA High Reverse Voltage: VRRM = 200V Low Power Loss, High Efficiency = 80A High Surge Current: FSM I RoHS 2002/95/EC Compliant


    Original     		PDF DO-214AA 2002/95/EC

    340B

    Abstract: 320B 330B 350B SM320B 3150b SM3200B sm340b 150V-200V SM 110 CJ
    Text: SM320B thru SM3200B Schottky Barrier Rectifiers PRIMARY CHARACTERISTICS 0.086 2.20 0.077 (1.95) IF 3A VRRM 20~200V IFSM 80A 0.155 (3.94) 0.130 (3.30) 0.180 (4.57) 0.160 (4.06) VF 0.50V, 0.70V, 0.85V, 0.87V, 0.90V TJ max 20V-100V: 125°C, 150V-200V: 150°C


    Original     		PDF SM320B SM3200B 0V-100V: 50V-200V: DO-214AA SM340B SM350B SM360B SM380B 340B 320B 330B 350B 3150b SM3200B sm340b 150V-200V SM 110 CJ

    S3203A

    Abstract: S320
    Text: S320 3A, 200V, Surface Mount Package Schottky Rectifier Features • • • • • Low Profile, Mini Surface Mount Package: SMB / DO-214AA High Reverse Voltage: VRRM = 200V Low Power Loss, High Efficiency High Surge Current: IFSM = 80A RoHS 2002/95/EC Compliant


    Original     		PDF DO-214AA 2002/95/EC DO-214AA S3203A S320

    Untitled

    Abstract: No abstract text available
    Text: CHIP RESISTOR Chip Resistors Selection Guide • General Purpose Chip Resistor SERIES MA 0402 KO 0402 1.00*0.50 1/16W 50V 1/10W 0805 2.00*1.25 1210 3.10*2.50 1812/2010 2010 5.00*2.50 2512 2512 6.25*3.10 1/4W 200V 1/2W 200V 3/4W 200V TO 1210 150V UC ND CO 1206


    Original     		PDF 1/16W 350oC 0402x2/4P2R0402 0402x4/8P4R0402 1002/10K 0603x4/8P4R0603

    IRF P CHANNEL MOSFET 200V 20A

    Abstract: P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
    Text: 30V 1000V 200V 100V 0.014Ω 60V RF1S9630SM Note 200V, 6.5A, 0.800Ω RF1S4N100SM 1000V, 4.3A, 3.500Ω RF1S630SM 200V, 9A, 0.400Ω 0A TO 10A S E M I C O N D U C TO R 3.500Ω 0.800Ω 0.500Ω 0.400Ω 0.18Ω 0.300Ω 0.200Ω 0.160Ω 0.080Ω 0.077Ω


    Original     		PDF RF1S9630SM RF1S4N100SM RF1S630SM RF1S70N06SM RF1S70N03SM O-263AB) LC96586 IRF P CHANNEL MOSFET 200V 20A P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252

    1E14

    Abstract: 2E12 FRL9230D FRL9230H FRL9230R
    Text: FRL9230D, FRL9230R, FRL9230H 3A, -200V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 3A, -200V, RDS on = 1.30Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		PDF FRL9230D, FRL9230R, FRL9230H -200V, O-205AF 100KRAD 300KRAD 1000KRAD 3000KRAD 1E14 2E12 FRL9230D FRL9230H FRL9230R

    Rad Hard in Fairchild for MOSFET

    Abstract: 1E14 2E12 FRL9230D FRL9230H FRL9230R
    Text: FRL9230D, FRL9230R, FRL9230H 3A, -200V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Title RL9 0D, L92 R, L92 H bt A, 0V, m, d rd, anwer OSTs) utho eyrds terrpoon, minctor, ,0V, m, d rd, Features Package • 3A, -200V, RDS on) = 1.30Ω TO-205AF


    Original     		PDF FRL9230D, FRL9230R, FRL9230H -200V, O-205AF 100KRAD 300KRAD 1000KRAD 3000KRAD Rad Hard in Fairchild for MOSFET 1E14 2E12 FRL9230D FRL9230H FRL9230R

    2SC6011A

    Abstract: 2SC6011 2sa2151 2SC601 2SA21 2SA2151A 230 10mhz
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC6011/A DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 200V(Min)-2SC6011 = 200V(Min)-2SC6011A ·Good Linearity of hFE ·Complement to Type 2SA2151/A APPLICATIONS


    Original     		PDF 2SC6011/A -2SC6011 -2SC6011A 2SA2151/A 2SC6011 2SC6011A Pow011 2SC6011A 2SC6011 2sa2151 2SC601 2SA21 2SA2151A 230 10mhz

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7396 Formerly FSL230R4 5A, 200V, 0.460 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 5A, 200V, rDS ON = 0.460Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs


    Original     		PDF JANSR2N7396 FSL230R4

    Rad Hard in Fairchild for MOSFET

    Abstract: No abstract text available
    Text: FSL230D, FSL230R 5A, 200V, 0.460 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 5A, 200V, rDS ON = 0.460Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs


    Original     		PDF FSL230D, FSL230R Rad Hard in Fairchild for MOSFET

    2N6798

    Abstract: TB334
    Text: 2N6798 Data Sheet December 2001 5.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET Features • 5.5A, 200V The 2N6798 is an N-Channel enhancement mode silicon gate power MOS field effect transistor designed for applications such as switching regulators, switching


    Original     		PDF 2N6798 2N6798 TB334 O-205AF TB334

    Rad Hard in Fairchild for MOSFET

    Abstract: 1E14 2E12 FSS9230D FSS9230D1 FSS9230D3 FSS9230R FSS9230R1 fairchild MOSFET reliability report
    Text: FSS9230D, FSS9230R 4A, -200V, 1.60 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs December 2001 Features Description • 4A, -200V, rDS ON = 1.60Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs


    Original     		PDF FSS9230D, FSS9230R -200V, Rad Hard in Fairchild for MOSFET 1E14 2E12 FSS9230D FSS9230D1 FSS9230D3 FSS9230R FSS9230R1 fairchild MOSFET reliability report

    FDP2670

    Abstract: FDB2670
    Text: FDP2670/FDB2670 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 200V MOSFETs with low on-resistance and


    Original     		PDF FDP2670/FDB2670 FDP2670 FDB2670

    1E14

    Abstract: 2E12 FSL9230D FSL9230D1 FSL9230D3 FSL9230R FSL9230R1
    Text: FSL9230D, FSL9230R 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 3A, -200V, rDS ON = 1.50Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		PDF FSL9230D, FSL9230R -200V, O-205AF 254mm) FSL9230R 1E14 2E12 FSL9230D FSL9230D1 FSL9230D3 FSL9230R1

    integrated circuits equivalents list

    Abstract: Rad Hard in Fairchild for MOSFET
    Text: FSL9230D, FSL9230R 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs December 2001 Features Description • 3A, -200V, rDS ON = 1.50Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		PDF FSL9230D, FSL9230R -200V, integrated circuits equivalents list Rad Hard in Fairchild for MOSFET

    55A200V

    Abstract: IRFF230 TB334
    Text: IRFF230 Data Sheet January 2002 5.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET Features • 5.5A, 200V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFF230 TA17412. 55A200V IRFF230 TB334

    IRF9622

    Abstract: IRF9620 IRF9623 IRF9621 TB334
    Text: IRF9620, IRF9621, IRF9622, IRF9623 S E M I C O N D U C T O R -3A and -3.5A, -150V and -200V, 1.5 and 2.4 Ohm, P-Channel Power MOSFETs July 1998 Features Description • -3A and -3.5A, -150V and -200V These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		PDF IRF9620, IRF9621, IRF9622, IRF9623 -150V -200V, -200V IRF9622 IRF9620 IRF9623 IRF9621 TB334

    Untitled

    Abstract: No abstract text available
    Text: FSL9230D, FSL9230R 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 3A, -200V, ros ON = 1 -50ii The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan     		PDF FSL9230D, FSL9230R -200V, O-205AF 254mm)

    Untitled

    Abstract: No abstract text available
    Text: y*Rg*s FRL9230D, FRL9230R, FRL9230H 3A, -200V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 3A, -200V, RDS on = 1.30£i TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)


    OCR Scan     		PDF FRL9230D, FRL9230R, FRL9230H -200V, O-205AF 100KRAD 300KRAD 1000KRAD 3000KRAD

    data sw 3205

    Abstract: No abstract text available
    Text: FSS9230D, FSS9230R 4A, -200V, 1.60 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 4A, -200V, ros ON = 1 -60ii The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan     		PDF FSS9230D, FSS9230R -200V, -257AA MIL-S-19500 data sw 3205

    40842

    Abstract: No abstract text available
    Text: ffj h a fr fr is U FSL9230D, S E M I C O N D U C T O R 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 3A, -200V, ros QN = 1.50Q The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan     		PDF FSL9230D, -200V, MIL-STD-750, MIL-S-19500, -160V, 100ms; 500ms; 40842