Untitled
Abstract: No abstract text available
Text: Specifications 878 875B models 815 200pF 0.1pF 2nF (1pF) 20nF (10pF) 200nF (100pF) 2µF (1nF) 20µF (10nF) 200µF (100nF) 2mF (1µF) 20mF (10µF) ±(1%rdg + 2dgt) ±(1%rdg + 2dgt) ±(1%rdg + 2dgt) ±(1%rdg + 2dgt) ±(1%rdg + 2dgt) ±(1%rdg + 2dgt) ±(2%rdg + 10 dgt)
|
Original
|
PDF
|
200pF
200nF
100pF)
100nF)
LC-29B
|
300nF CAPACITOR
Abstract: 150nf LC PI FILTER DESIGN 680nf 200nf capacitor Pi filter emi filter Varistor for 3KV 300nF SFJE
Text: EMI Filters – Quick Reference Guide SURFACE MOUNT SOLDER-IN THREADED FILTER RANGE DESCRIPTION CIRCUIT CAPACITANCE RANGE E01 EMI CHIP 3 TERMINAL CHIP, SIZES 0805,1206 & 1806 C 22pF - 200nF E07 EMI CHIP HIGH CURRENT EMI CHIP, SIZES 0805, 1206 & 1806 C 1nF - 200nF
|
Original
|
PDF
|
200nF
150nF
220nF
10Amp
20Amp
470nF
100nF
300nF CAPACITOR
150nf
LC PI FILTER DESIGN
680nf
200nf capacitor
Pi filter
emi filter
Varistor for 3KV
300nF
SFJE
|
sepic converter
Abstract: 22uH CS5171 Q12N3906 sepic 2N3906 MBRM110LT1 NCS2001 22uf 622uF
Text: CS5171-Based SEPIC Converter D1 U1 C4 C5 200nF 3 0.01uF 1 5 R2 5.1kohm 4 Vc C1 Vsw FB Test SS PGnd AGnd Vcc CS5171 4V MBRM110LT1 8 2 L1 6 22uF 22uH Lumiled1 L2 22uH C3 22uF Q1 2N3906 R4 10kohm R1 1.4ohm C2 Gnd U2 7 22uF Demo board Applications Brief Datasheet: CS5171
|
Original
|
PDF
|
CS5171-Based
200nF
CS5171
MBRM110LT1
2N3906
10kohm
sepic converter
22uH
CS5171
Q12N3906
sepic
2N3906
MBRM110LT1
NCS2001
22uf
622uF
|
5d 3kv
Abstract: CAPACITOR 5D 3KV 271 Ceramic Disc Capacitors CAPACITOR 5D "3KV" ceramic capacitor 1kV 6.8 nF capacitor 270pF, 4KV ceramic disc 68PF 50V 6LS AVX 821 ceramic capacitor capacitor 100nf 100v polyester
Text: A KYOCERA GROUP COMPANY TPC Disc Ceramic Capacitors Disc Ceramic Capacitors Selection Guide General Purpose Professional Application Voltage Capacitance dc CR (min.~ max.) Tolerance R isol Min. 25V 4.7nF 4.7nF 100nF 200nF ±20% / -20 + 50% -20 + 80% 1. 12 M Ω
|
Original
|
PDF
|
100nF
200nF
180pF
270pF
330pF
390pF
470pF
5d 3kv
CAPACITOR 5D 3KV
271 Ceramic Disc Capacitors
CAPACITOR 5D "3KV"
ceramic capacitor 1kV 6.8 nF
capacitor 270pF, 4KV
ceramic disc 68PF 50V
6LS AVX
821 ceramic capacitor
capacitor 100nf 100v polyester
|
y5p 3kv
Abstract: 330pF Y5F capacitor 270pF, 4KV 4.7nf 4kv y5u 2kv capacitors N1500 ceramic capacitor 100nF 50 y5v 3kv 47NF 500V 2.2nf 4kv
Text: Disc Ceramic Capacitors Selection Guide General Purpose Professional Application Voltage Capacitance dc CR (min.~ max.) Tolerance R isol Min. 25V 4.7nF 4.7nF 100nF 200nF ±20% / -20 + 50% -20 + 80% 1. 12 M Ω III 50V 4.7nF 4.7nF 100nF 100nF ±20% / -20 + 50%
|
Original
|
PDF
|
100nF
200nF
180pF
270pF
330pF
390pF
470pF
y5p 3kv
330pF Y5F
capacitor 270pF, 4KV
4.7nf 4kv
y5u 2kv capacitors
N1500
ceramic capacitor 100nF 50
y5v 3kv
47NF 500V
2.2nf 4kv
|
isolated low ripple 1w dc dc converter
Abstract: DCP010515BP
Text: DCP DCP0105 Series 010 DCP 5 010 5 Miniature 5V Input, 1W Isolated UNREGULATED DC/DC CONVERTERS FEATURES DESCRIPTION ● STANDARD JEDEC PLASTIC PACKAGE The DCP0105 family is a series of high efficiency, 5V input isolated DC/DC converters. In addition to 1W
|
Original
|
PDF
|
DCP0105
EN55022
1000Vrms
400kHz
szza046
DCP01/02
sbaa035a
sbva012
isolated low ripple 1w dc dc converter
DCP010515BP
|
ADP1828
Abstract: sharp lc-32 schematic BAT54 reset 20SP180M 2R5TPD1000M5 ADP1829 BAT54 BSC030N03LS BSC080N03LS ADP1828ACPZ-R7
Text: Synchronous Buck PWM, Step-Down, DC-to-DC Controller ADP1828 to regulate an output voltage as low as 0.6 V to 85% of the input voltage and is sized to handle large MOSFETs for point-of-load regulators. The ADP1828 is ideal for a wide range of high power applications, such as DSP and processor core I/O power, and
|
Original
|
PDF
|
ADP1828
ADP1828
RQ-20
CP-20-10
D06865-0-11/10
sharp lc-32 schematic
BAT54 reset
20SP180M
2R5TPD1000M5
ADP1829
BAT54
BSC030N03LS
BSC080N03LS
ADP1828ACPZ-R7
|
SFD60N03L
Abstract: No abstract text available
Text: SFD60N03L Electrical Characteristics Symbol TC = 25 °C unless otherwise noted Parameter Test Conditions Min Typ Max Units 30 - - V - 0.02 - V/°C VDS = 30V, VGS = 0V - - 1 uA VDS = 24V, TC = 125 °C - - 10 uA Gate-Source Leakage, Forward VGS = 20V, VDS = 0V
|
Original
|
PDF
|
SFD60N03L
250uA
SFD60N03L
|
Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor, Inc. DOCUMENT NUMBER MC9S12KG128 Freescale Semiconductor, Inc. MC9S12KG128 SoC Guide V01.01 Original Release Date: 16 JUL 2002 Revised: 08 MAR 2002 Motorola, Inc. Motorola reserves the right to make changes without further notice to any products herein to improve reliability, function or design.
|
Original
|
PDF
|
MC9S12KG128
112-pin
MC9S12KG128
|
Untitled
Abstract: No abstract text available
Text: TPS54362-Q1 www.ti.com SLVS845C – MARCH 2009 – REVISED MAY 2010 3A, 60V STEP DOWN DC/DC CONVERTER WITH LOW Iq Check for Samples: TPS54362-Q1 FEATURES • 1 • 2 • • • • • • • • • • • Withstands Transients up to 60V With an Operating Range of 3.6V to 48V
|
Original
|
PDF
|
TPS54362-Q1
SLVS845C
200kHz
|
7N50
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 7N50 Preliminary Power MOSFET 7A, 500V N-CHANNEL POWER MOSFET 1 The UTC 7N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state
|
Original
|
PDF
|
O-220
O-220F1
QW-R502-527
7N50
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 24N50 Power MOSFET 24A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 24N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state
|
Original
|
PDF
|
24N50
24N50
QW-R502-533
|
Untitled
Abstract: No abstract text available
Text: date 03/08/2013 page 1 of 8 SERIES: V78-500-SMT │ DESCRIPTION: NON-ISOLATED SWITCHING REGULATOR FEATURES • • • • • • • • 500 mA current output high efficiency up to 92% no heat sink required SMT package remote on/off control low ripple and noise
|
Original
|
PDF
|
V78-500-SMT
V7803-500-SMT
V7805-500-SMT
|
Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF9640 Preliminary Power MOSFET 11 Amps, 200 Volts P-CHANNEL POWER MOSFET DESCRIPTION The UF9640 is a P-channel Power MOSFET that developed by UTC’s advanced technlogy. The device hasan advantage of include fast switching, low on-resistance, ruggedized device design and low
|
Original
|
PDF
|
UF9640
UF9640
O-220
QW-R502-484
|
|
|
11n90
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 11N90 Preliminary 11 Amps, 900 Volts N-CHANNEL POWER MOSFET Power MOSFET 1 TO-220 DESCRIPTION The UTC 11N90 is an N-channel enhancement mode Power FET using UTC’s advanced technology to provide costomers with planar stripe and DMOS technology. This technology specializes in
|
Original
|
PDF
|
11N90
O-220
11N90
O-220F1
QW-R502-497
|
15N65
Abstract: DSA008952 N-channel MOSFET to-247
Text: UNISONIC TECHNOLOGIES CO., LTD 15N65 Preliminary Power MOSFET 15 Amps, 650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 15N65 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a
|
Original
|
PDF
|
15N65
15N65
QW-R502-481
DSA008952
N-channel MOSFET to-247
|
MJ192
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 22N20 Preliminary Power MOSFET 22A, 200V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 22N20 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology is
|
Original
|
PDF
|
22N20
O-220
22N20
O-252
QW-R502-611
MJ192
|
9N50
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 9N50 Preliminary Power MOSFET 9 Amps, 500 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 9N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers planar stripe and DMOS technology. This technology allows a minimum on-state
|
Original
|
PDF
|
QW-R502-522
9N50
|
Untitled
Abstract: No abstract text available
Text: Filter Type Feedthrough EMI Filter Datasheet SFBD 12-32 UNEF Tread : 4.75mm Hexagonal Head Circuit Configurations Available Electrical Details Electrical Configuration Capacitance Measurement Current Rating Insulation Resistance (IR) Temperature Rating Ferrite Inductance (Typical)
|
Original
|
PDF
|
1000hr
-55oC
125oC
31lbf
65lbf
P108893)
|
8n80
Abstract: MOSFET 8N80 ua 471 TO-220-F1 8N80L-TA3-T 8N80G-TA3-T
Text: UNISONIC TECHNOLOGIES CO., LTD 8N80 Power MOSFET 8A, 800V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 8N80 is an N-channel mode power MOSFET, it uses UTC’s advanced technology to provide costumers planar stripe and DMOS technology. This technology allows a minimum on-state
|
Original
|
PDF
|
O-220
O-220F1
QW-R502-471
8n80
MOSFET 8N80
ua 471
TO-220-F1
8N80L-TA3-T
8N80G-TA3-T
|
24N50
Abstract: mosfet 24n50 24N50L-T47-T
Text: UNISONIC TECHNOLOGIES CO., LTD 24N50 Power MOSFET 24A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 24N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state
|
Original
|
PDF
|
24N50
24N50
QW-R502-533
mosfet 24n50
24N50L-T47-T
|
16N50
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 16N50 Preliminary Power MOSFET 16 A, 500 V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 16N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state
|
Original
|
PDF
|
16N50
O-220F
16N50
O-220F2
QW-R502-532
|
7n80
Abstract: 7N80 TO220 7N80L-TF3-T 66a 523
Text: UNISONIC TECHNOLOGIES CO., LTD 7N80 Preliminary Power MOSFET 7A, 800V N-CHANNEL POWER MOSFET DESCRIPTION 1 The UTC 7N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a
|
Original
|
PDF
|
O-220
O-220F
O-220F1
O-263
QW-R502-523
7n80
7N80 TO220
7N80L-TF3-T
66a 523
|
Untitled
Abstract: No abstract text available
Text: Fee' ilter and Integrated Passive Component Selection Guide RANGE SURFACE MOUNT SOLDER-IN THREADED 70 M O U N T IN G D E S C R IP T IO N C IR C U IT C A P A C IT A N C E PAGE RA N G E No. EMI CHIP E01 STYLE 3 TERM IN AL CHIP, SIZES 0805, 1206 & 1806 C 22p - 200nF
|
OCR Scan
|
PDF
|
200nF
220nF
470nF
|
