STV200N55F3
Abstract: No abstract text available
Text: 200N55F3 N-channel 55 V, 1.8 mΩ, 200 A, PowerSO-10 STripFET Power MOSFET Features Type VDSS RDS on max ID (1) 200N55F3 55 V < 2.5 mΩ 200 A 10 1. Current limited by package 1 PowerSO-10 • Conduction losses reduced ■ Low profile, very low parasitic inductance
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STV200N55F3
PowerSO-10
STV200N55F3
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STV200N55F3
Abstract: MAR 740 MOSFET TRANSISTOR
Text: 200N55F3 N-channel 55 V, 1.8 mΩ, 200 A, PowerSO-10 STripFET Power MOSFET Features Type VDSS RDS on max ID (1) 200N55F3 55 V < 2.5 mΩ 200 A 10 1. Current limited by package 1 PowerSO-10 • Conduction losses reduced ■ Low profile, very low parasitic inductance
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STV200N55F3
PowerSO-10
STV200N55F3
MAR 740 MOSFET TRANSISTOR
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sth200n55f3
Abstract: STH200N55F3-2
Text: 200N55F3-2 N-channel 55 V, 1.8 mΩ, 160 A, H2PAK STripFET III Power MOSFET Preliminary data Features Type VDSS RDS on max ID (1) 200N55F3-2 55 V < 2.6 mΩ 160 A 2 1. Current limited by package • Ultra low on-resistance 3 ■ 100% avalanche tested
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STH200N55F3-2
200N55F3
sth200n55f3
STH200N55F3-2
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STV200N55F3
Abstract: No abstract text available
Text: 200N55F3 N-channel 55 V, 1.8 mΩ, 200 A, PowerSO-10 STripFET Power MOSFET Features Type VDSS RDS on max ID (1) 200N55F3 55 V < 2.5 mΩ 200 A 10 1. Current limited by package 1 PowerSO-10 • Conduction losses reduced ■ Low profile, very low parasitic inductance
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STV200N55F3
PowerSO-10
STV200N55F3
PowerSO-10
200N55F3
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JESD97
Abstract: STV200N55F3
Text: 200N55F3 N-channel 55 V - 1.8 mΩ - 200 A - PowerSO-10 STripFET Power MOSFET Preliminary data Features Type VDSS RDS on ID (1) 200N55F3 55 V < 2.5 mΩ 200 A 10 1. Current limited by package 1 • Conduction losses reduced ■ Low profile, very low parasitic inductance
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Original
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STV200N55F3
PowerSO-10
JESD97
STV200N55F3
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