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    200N06P Search Results

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    IXYS Corporation IXTQ200N06P

    MOSFET N-CH 60V 200A TO3P
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    200N06P Datasheets Context Search

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    200N06P

    Abstract: No abstract text available
    Text: PolarHTTM Power MOSFET VDSS ID25 IXTQ 200N06P RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS TJ = 25° C to 175° C 60 V VDGR TJ = 25° C to 175° C; RGS = 1 MΩ 60 V VGS VGSM Transient Continuous ±30 ±20 V V ID25 TC = 25° C


    Original     		PDF 200N06P 200N06P

    Untitled

    Abstract: No abstract text available
    Text: PolarHTTM Power MOSFET VDSS ID25 IXTQ 200N06P = 60 V = 200 A ≤ 6.0 mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS TJ = 25° C to 175° C 60 V VDGR TJ = 25° C to 175° C; RGS = 1 MΩ 60 V VGS VGSM Transient Continuous


    Original     		PDF 200N06P

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2