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    ISL8200MIRZ Renesas Electronics Corporation Complete Current Share 10A DC/DC Power Module, Module, /Tray Visit Renesas Electronics Corporation
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    Globetek Inc WR9HA1200MICB-F(R6W)

    AC/DC WALL MOUNT ADAPTER 5V 6W
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    DigiKey WR9HA1200MICB-F(R6W) Bulk 1,252 1
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    Globetek Inc WR9QA1200MICB-N(R6B)

    AC/DC WALL MOUNT ADAPTER 5V 6W
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    DigiKey WR9QA1200MICB-N(R6B) Bulk 367 1
    • 1 $7.14
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    Globetek Inc WR9MA1200MICB-F(R6W)

    AC/DC WALL MOUNT ADAPTER 5V 6W
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    DigiKey WR9MA1200MICB-F(R6W) Bulk 162 1
    • 1 $9.19
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    Globetek Inc WR95A1200MICB-F(R6W)

    AC/DC WALL MOUNT ADAPTER 5V 6W
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    DigiKey WR95A1200MICB-F(R6W) Bulk 118 1
    • 1 $9.19
    • 10 $9.19
    • 100 $8.1789
    • 1000 $7.85204
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    Globetek Inc WR9MA1200MICB-F(R6B)

    AC/DC WALL MOUNT ADAPTER 5V 6W
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    DigiKey WR9MA1200MICB-F(R6B) Bulk 101 1
    • 1 $12.07
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    200MI Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    LV5808MX

    Abstract: CDRH105RNP-100NC Q117 SBM30-03 LV5808M 370khz
    Text: Ordering number : ENA1607 Bi-CMOS IC LV5808MX Step-down Switching Regulator Overview LV5808MX is a 1ch step-down switching regulator. 0.3Ω FET is incorporated on the upper side to achieve high-efficiency operation for large output current. Low-heat resistance and compact-package MFP8 200mil employed. Current mode


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    ENA1607 LV5808MX LV5808MX 200mil) A1607-5/5 CDRH105RNP-100NC Q117 SBM30-03 LV5808M 370khz PDF

    CDRH105RNP-100NC

    Abstract: LV58061MX SBM30-03
    Text: 注文コード No.N A 1 6 9 2 Bi-CMOS 集積回路 LV58061MX ステップダウン スイッチングレギュレータ 概要 LV58061MXは1chステップダウン・スイッチングレギュレータである。上側に0.13Ω FETを内蔵し大 きな出力電流に対し、高効率動作を実現した。低熱抵抗で小型パッケージのMFP8 200mil を採用。


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    LV58061MX LV58061MX1ch0 200mil) 370kHz 20100319-S00003 A1692-1/5 CDRH105RNP-100NC A1692-3/5 CDRH105RNP-100NC LV58061MX SBM30-03 PDF

    Untitled

    Abstract: No abstract text available
    Text: LV58063MC Step-Down Switching Regulator Application Note http://onsemi.com Overview LV58063MC is a 1ch step-down switching regulator. 0.13 FET is incorporated on the upper side to achieve high-efficiency operation for large output current. Low-heat resistance and compact-package SOP8L 200mil employed.


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    LV58063MC LV58063MC 200mil) PDF

    Hitachi DSA002788

    Abstract: No abstract text available
    Text: HVR100 Variable Capacitance Diode for AM tuner ADE-208-079E Z Rev.5 Features • • • • High capacitance ratio. (n = 16.0min) High figure of merit. (Q = 200min) To be usable at low voltagee. Small Resin Package (SRP) is suitable for surface mount design.


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    HVR100 ADE-208-079E 200min) HVR100 Hitachi DSA002788 PDF

    340KHz

    Abstract: C66A
    Text: 注文コード No.N A 1 8 4 3 Bi-CMOS 集積回路 ステップダウン スイッチングレギュレータ LV5857MX 概要 LV5857MXは1chステップダウン・スイッチングレギュレータである。上側/下側に0.13Ω FETを内蔵し 大きな出力電流に対し、高効率動作を実現した。低熱抵抗で小型パッケージのMFP8 200mil を採用。


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    LV5857MX LV5857MX1ch 200mil) 340kHz 20100915-S00003 A1843-1/5 A1843-3/5 340KHz C66A PDF

    LV5809

    Abstract: A1475 Q117 200MIL ic 4518
    Text: 注文コード No.N A 1 4 7 5 Bi-CMOS 集積回路 ステップダウン スイッチングレギュレータ LV5809MX 概要 LV5809MXは1chステップダウン・スイッチングレギュレータである。上側に0.2Ω FETを内蔵し大き な出力電流に対し、高効率動作を実現した。低熱抵抗で小型パッケージのMFP8 200mil を採用。電


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    LV5809MX LV5809MX1ch0 200mil) 5V18V) 330kHz 20090507-S00003 A1475-1/5 100Rb LV5809 A1475 Q117 200MIL ic 4518 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1639 Bi-CMOS IC LV5856MX Step-down Switching Regulator Overview LV5856MX is a 1ch step-down switching regulator. With built-in two 0.13Ω power MOSFET switch, it achieves high output current and high efficiency. With low-heat resistance, miniature package MFP8 200mil with heat-sink is adopted.


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    ENA1639 LV5856MX LV5856MX 200mil) A1639-5/5 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1607 Bi-CMOS IC LV5808MX Step-down Switching Regulator Overview LV5808MX is a 1ch step-down switching regulator. 0.3Ω FET is incorporated on the upper side to achieve high-efficiency operation for large output current. Low-heat resistance and compact-package MFP8 200mil employed. Current mode


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    ENA1607 LV5808MX LV5808MX 200mil) A1607-5/5 PDF

    2SD2558

    Abstract: No abstract text available
    Text: Equivalent circuit 2SD2558 Silicon NPN Triple Diffused Planar Transistor ICBO VCB=200V 100max µA VCEO 200 V IEBO VEB=6V 5max mA VEBO 6 V V BR CEO IC 5 A hFE IC=10mA 200min VCE=5V, IC=1A 1500 to 6500 Unit VCE(sat) IC=1A, IB=5mA 1.5max V W fT VCE=10V, IE=–0.5A


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    2SD2558 FM100 100max 200min 15typ 110typ 2SD2558 PDF

    CDRH105RNP-100NC

    Abstract: Q117 SBM30-03
    Text: Ordering number : ENA1495A Bi-CMOS IC LV5807MX Step-down Switching Regulator Overview LV5807MX is a 1ch step-down switching regulator. 0.12Ω FET is incorporated on the upper side to achieve high-efficiency operation for large output current. Low-heat resistance and compact-package MFP8 200mil employed.


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    ENA1495A LV5807MX LV5807MX 200mil) 18Vuse. A1495-5/5 CDRH105RNP-100NC Q117 SBM30-03 PDF

    JP2 connector

    Abstract: 001-page DIL10 EVB90121 ISO15693 MLX90121 SSO20 VK200 XC6201 XC62FP
    Text: EVB90121 MLX90121 Evaluation Board Features and Benefits Output power up to 200miliwatts Complies with standard ISO15693 and ISO 14443 protocols Programmable encoder for custom protocol Short to medium reading range applications Matching network optimized for 50 ohm antenna impedance


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    EVB90121 MLX90121 200miliwatts ISO15693 EVB90121 ISO14001 Dec-2004 JP2 connector 001-page DIL10 SSO20 VK200 XC6201 XC62FP PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1495 Bi-CMOS IC LV5807MX Step-down Switching Regulator Overview LV5807MX is a 1ch step-down switching regulator. 0.12Ω FET is incorporated on the upper side to achieve high-efficiency operation for large output current. Low-heat resistance and compact-package MFP8 200mil employed.


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    ENA1495 LV5807MX LV5807MX 200mil) A1495-5/5 PDF

    Untitled

    Abstract: No abstract text available
    Text: DCファンモータ□30x10t(ASFN3) 200min •寸法図(単位mm) φ 3.2 10±0.2 0.2 24±0.2 30±0.3 ± 風向 24±0.2 ■定格 30±0.3 1. スタンダードスピード 定格電流 定格入力 (W)max./AVE (mA)max./AVE


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    200min DC12V PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1607 Bi-CMOS IC LV5808MX Step-down Switching Regulator Overview LV5808MX is a 1ch step-down switching regulator. 0.3Ω FET is incorporated on the upper side to achieve high-efficiency operation for large output current. Low-heat resistance and compact-package MFP8 200mil employed. Current mode


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    ENA1607 LV5808MX LV5808MX 200mil) A1607-5/5 PDF

    2SD2557

    Abstract: No abstract text available
    Text: Equivalent circuit 2SD2557 Silicon NPN Triple Diffused Planar Transistor Unit VCB=200V 100max µA VCEO 200 V IEBO VEB=6V 5max mA VEBO 6 V V BR CEO IC 5 A hFE IC=10mA 200min VCE=5V, IC=1A 1500 to 6500 V a 4.8±0.2 2.0±0.1 ø3.2±0.1 b IB 2 A VCE(sat) IC=1A, IB=5mA


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    2SD2557 MT-100 100max 200min 2SD2557 PDF

    DXT170-75-1

    Abstract: DXT170-71-1 AXT661-1 AXT661-14A VQ110-5L-Q DXT170 AXT661-13ADC JISB8374-1993 VQ100 SOl-23
    Text: 3 Port Solenoid Valve Series VQ100 Unprecedented high speed, stable response, and extra-long service life. ON: 3.5ms, OFF: 2ms, Dispension accuracy ±1ms With indicator light and surge voltage suppressor; supply pressure 0.5MPa 200million cycles or more (clean and dry air)


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    VQ100 200million VVQ100-10A-2 VV3Q12) DXT170-75-1 DXT170-71-1 AXT661-1 AXT661-14A VQ110-5L-Q DXT170 AXT661-13ADC JISB8374-1993 VQ100 SOl-23 PDF

    2SC4382

    Abstract: 2SC4381 FM20 2SC4382 transistor DSA0016509
    Text: 2SC4381/4382 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1667/1668 V ICBO VCB= VEBO 6 V IEBO IC 2 A V(BR)CEO 150 VEB=6V 200 V µA 10max IC=25mA 150min 200min 1 A hFE VCE=10V, IC=0.7A 60min PC 25(Tc=25°C) W VCE(sat) IC=0.7A, IB=0.07A


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    2SC4381/4382 2SA1667/1668) 10max 150min 200min 60min 15typ 35typ O220F) 2SC4382 2SC4381 FM20 2SC4382 transistor DSA0016509 PDF

    2SC3858

    Abstract: 2SA1494 2sc3858 transistor transistor 2sc3858 DSA0016508
    Text: 2SC3858 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1494 Symbol Conditions Ratings Unit VCB=200V 100max µA VEB=6V 100max µA IC=50mA 200min V Ratings Unit VCBO 200 V ICBO VCEO 200 V IEBO VEBO 6 V V(BR)CEO IC 17 A hFE VCE=4V, IC=8A


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    2SC3858 2SA1494) 100max MT-200 200min 50min 20typ 300typ 2SC3858 2SA1494 2sc3858 transistor transistor 2sc3858 DSA0016508 PDF

    Untitled

    Abstract: No abstract text available
    Text: Capacitors Ceramic Trimmer Capacitors o TZR1 Series 1.7 0.9 max. 1.5 Depth;0.15 0.45 0.2 0.35 (Tolerancein: ±0.1 mm) Cmin. (pF) Cmax. (pF) TC Q Rated Voltage Withstanding Voltage TZR1Z010A001 0.55 max. 1.0 +100/-0% NP0±300ppm/°C 200min. at 200MHz, Cmax.


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    TZR1Z010A001 TZR1Z1R5A001 TZR1Z040A001 TZR1R080A001 300ppm/ 500ppm/ 200min. 200MHz, PDF

    Q117

    Abstract: No abstract text available
    Text: Ordering number : ENA1475 Bi-CMOS IC LV5809MX Step-down Switching Regulator Overview LV5809MX is a 1ch step-down switching regulator. 0.2Ω FET is incorporated on the upper side to achieve high-efficiency operation for large output current. Low-heat resistance and compact-package MFP8 200mil employed. Current mode


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    ENA1475 LV5809MX LV5809MX 200mil) A1475-5/5 Q117 PDF

    CDRH105RNP-330NC

    Abstract: Q117 SBM30-03
    Text: 注文コード No.N A 1 8 6 3 Bi-CMOS 集積回路 LV58082MX ステップダウン スイッチングレギュレータ 概要 LV58082MXは1chステップダウン・スイッチングレギュレータである。上側に0.3Ω FETを内蔵し大 きな出力電流に対し、高効率動作を実現した。低熱抵抗で小型パッケージのMFP8 200mil を採用。


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    LV58082MX LV58082MX1ch0 200mil) 370kHz O2710 20101014-S00002 A1863-1/5 CDRH105RNP-330NC CDRH105RNP-330NC Q117 SBM30-03 PDF

    Q117

    Abstract: LV5808M 5V 2A SW regulator 5800pF CDRH105RNP-100NC LV5808MX SBM30-03 Q-117 16v80
    Text: 注文コード No.N A 1 6 0 7 Bi-CMOS 集積回路 ステップダウン スイッチングレギュレータ LV5808MX 概要 LV5808MXは1chステップダウン・スイッチングレギュレータである。上側に0.3Ω FETを内蔵し大き な出力電流に対し、高効率動作を実現した。低熱抵抗で小型パッケージのMFP8 200mil を採用。電


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    LV5808MX LV5808MX1ch0 200mil) 370kHz O2809 20091023-S00006 A1607-1/5 CDRH105RNP-100NC Q117 LV5808M 5V 2A SW regulator 5800pF LV5808MX SBM30-03 Q-117 16v80 PDF

    2SD2016

    Abstract: FM20
    Text: 2SD2016 Silicon NPN Triple Diffused Planar Transistor VCEO 200 V IEBO VEBO 6 V V BR CEO IC 3 A hFE Symbol Conditions VCB=200V 10max µA 10max mA VEB=6V V 200min IC=10mA 1000 to 15000 VCE=4V, IC=1A 0.5 A VCE(sat) IC=1A, IB=1.5mA 1.5max PC 25(Tc=25°C) W VBE(sat)


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    2SD2016 10max 200min 90typ 40typ O220F) 150x150x2 50x50x2 2SD2016 FM20 PDF

    SSOP20-P-225A

    Abstract: No abstract text available
    Text: 7-2 Package SOP 14PIN 150mil BODY OUTLINE DRAW IN G (SOI14-P-150) 16 9 W eight : 0.13g(TYP.) 88 U nit in mm SO P 20PIN (300mil B O D Y ) OU TLIN E D R A W IN G (SOL20-P-300) U nit in mm 7^45' it W eight 0.46g (TYP.) 89 SO P 14PIN (200mil B O D Y ) O U TLIN E D R A W IN G (SOP14-P-300)


    OCR Scan
    14PIN 150mil SOI14-P-150) 20PIN 300mil SOL20-P-300) 200mil OP14-P-300) 16PIN SSOP20-P-225A PDF