100C
Abstract: BUK564-200A
Text: Product specification Philips Semiconductors PowerMOS transistor BUK564-200A Logic level GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic level field-effect power transistor in a
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BUK564-200A
OT404
BUK564-200A
100C
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor BUK564-200A Logic level GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic level field-effect power transistor in a
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BUK564-200A
BUK564-200A
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor BUK565-200A Logic level GENERAL DESCRIPTION QUICK REFERENCE DATA N-channei enhancement mode logic level fleld-effect power transistor in a
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BUK565-200A
SQT404
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor BUK565-200A Logic level FET_ GENERAL DESCRIPTION QUICK REFERENCE DATA PIN Drain-source voltage Drain current DC Total power dissipation Junction temperature
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BUK565-200A
BUK565-200A
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BUK565-200A
Abstract: No abstract text available
Text: Product specification Philips Semiconductors PowerMOS transistor BUK565-200A Logic level GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic level field-effect power transistor in a
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BUK565-200A
OT404
BUK565-200A
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification PowerMOS transistor BUK554-200A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.
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BUK554-200A/B
BUK554
-200A
-200B
BUK554-200A/B
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transìstor BUK564-200A Logic level GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic level field-effect power transistor in a
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BUK564-200A
BUK564-200A
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor BUK564-200A Logic level FET_ GENERAL DESCRIPTION QUICK REFERENCE DATA SYMBOL N-channel enhancement mode logic level fieid-effect power transistor in a
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BUK564-200A
BUK564-200A
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FET TH 469
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification PowerMOS transistor BUK545-200A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack
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BUK545-200A/B
BUK545
-200A
-200B
FET TH 469
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BUK555-200A
Abstract: BUK555-200B T0220AB
Text: N AMER PHILIPS/DISCRETE b'IE P • bbS3T31 QGaDfilS ST6 ■ APX Philips Semiconductors Product Specification PowerMOS transistor BUK555-200A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode
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bbS3131
003D615
BUK555-200A/B
T0220AB
-ID/100
BUK555-200A
BUK555-200B
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BUK555-200A
Abstract: BUK555-200B M251 T0220AB
Text: PHILIPS INTERNATIONAL bSE D WM 711005t. DObMSSl 101 « P H I N Philips Semiconductors Product Specification PowerMOS transistor BUK555-200A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode
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711005t.
BUK555-200A/B
T0220AB
BUK555
-200A
-200B
-ID/100
BUK555-200A
BUK555-200B
M251
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE bRE V • L.L53R31 DDSOVVO SOT * A P X Philips Semiconductors Product Specification PowerMOS transistor BUK545-200A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode
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L53R31
BUK545-200A/B
-SOT186
BUK545
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BUK554-200
Abstract: BUK554-200A BUK564-200A
Text: Philips Semiconductors Product specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION BUK564-200A QUICK REFERENCE DATA N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount applications.
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BUK564-200A
OT404
175on
BUK554-200
BUK554-200A
BUK564-200A
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D 843 Transistor
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification PowerMOS transistor BUK555-200A/B Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in
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BUK555-200A/B
-200A
-200B
T0220AB
D 843 Transistor
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K545
Abstract: NDS 40-30 BUK545 BUK545-200A BUK545-200B cf rh transistor 4428A
Text: N AUER PHILIPS/DISCRETE b'lE V • ^ 5 3 ^ 3 1 □□30770 SOT * A P X Philips Semiconductors Product Specification PowerMOS transistor BUK545-200A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode
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D03077G
BUK545-200A/B
PINNING-SOT186
BUK545
-200A
-200B
K545
NDS 40-30
BUK545-200A
BUK545-200B
cf rh transistor
4428A
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philips 035
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification PowerMOS transistor BUK554-200A/B Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in
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BUK554-200A/B
-200A
-200B
philips 035
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product Specification PowerMOS transistor BUK545-200A/B Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
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BUK545-200A/B
BUK545
-200A
-200B
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Transistor 51Y
Abstract: 51y diode S20Q
Text: Product Specification Philips Semiconductors BU K554-200A/B PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level fieid-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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K554-200A/B
BUK554
-200A
-200B
T0220AB
BUK554-200A/B
Transistor 51Y
51y diode
S20Q
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K545
Abstract: BUK545 BUK545-200A BUK545-200B
Text: PHILIPS INTERNATIONAL b5E D B TllOflEb ODbMEOb Ibfl B P H I N Product Specification Philips Semiconductors BU K545-200A/B PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack
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7110flEb
K545-200A/B
-SOT186
BUK545
-200A
K545
BUK545-200A
BUK545-200B
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE b'lE P • bb 5 3 R 31 0 0 3 0 6 1 3 3 T6 « A P X Philips Semiconductors Product Specification PowerMOS transistor BUK555-200A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode
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BUK555-200A/B
O220AB
BUK555
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Untitled
Abstract: No abstract text available
Text: PRODUCT CATALO' N-CHANNEL ENHANCEMENT MOS FET 200A, o . o n n 1 0 0 V , SDF200NA10 HE FEATURES • • • • • • • • RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS LOW IR LOSSES LOW THERMAL RESISTANCE
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SDF200NA10
MIL-STD-883
03bflbG2
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hd6433577p20
Abstract: Hitachi DSA00276
Text: Hitachi Single-Chip Microcomputer H8/3577 Series, H8/3567 Series H8/3577 H8/3574 H8/3567 H8/3564 H8/3567U H8/3564U HD6433577, HD6473577 HD6433574 HD6433567, HD6473567 HD6433564-20, HD6433564-10 HD6433567U, HD6473567U HD6433564U Hardware Manual ADE-602-200A
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H8/3577
H8/3567
H8/3574
H8/3564
H8/3567U
H8/3564U
HD6433577,
HD6473577
hd6433577p20
Hitachi DSA00276
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Untitled
Abstract: No abstract text available
Text: - Philips Components Data sheet status Preliminary specification date of issue March 1991 Replaces BUK545-200A/B PHILIPS N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended tor use in
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BUK575-200A/B
711DflEb
DDM4734
BUK545-200A/B
BUK575
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TP5335
Abstract: TP5335K1 TP5335NW MOS P-Channel SOT23
Text: TP5335 TP5335 Low Threshold Product Objective Specification P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number/Package BVDSS / BVDGS RDS ON (max) VGS(th) (max) TO-236AB* Wafer -350V 25Ω -2.4V TP5335K1 TP5335NW *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.
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TP5335
O-236AB*
-350V
TP5335K1
TP5335NW
OT-23.
Characterist00
-150A
-200A
TP5335
TP5335K1
TP5335NW
MOS P-Channel SOT23
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