60HQ090
Abstract: international rectifier 200x200 SC200H100S5P
Text: International Rectifier Catalog Search Part Search Site Search Part: SC200H100S5P Description: 100V Size 200x200 Gen 1 SCHOTTKY CHIP PACK United States Support Docs: Datasheet Product ID Description SC200H100S5P 100V Size 200x200 Gen 1 SCHOTTKY CHIP PACK Parameter
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SC200H100S5P
200x200
60HQ090
28/10/20fier
60HQ090
international rectifier
SC200H100S5P
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SC200H100S5B
Abstract: 60HQ090 international rectifier
Text: International Rectifier Catalog Search Part Search Site Search Part: SC200H100S5B Description: 100V Size 200x200 Gen 1 SCHOTTKY DIE ON WAFER United States Support Docs: Datasheet Product ID SC200H100S5B Description 100V Size 200 x 200 Gen 1 SCHOTTKY Die On Wafer
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SC200H100S5B
200x200
60HQ090
SC200H10og
SC200H100s5B4/13/2005
SC200H100S5B
60HQ090
international rectifier
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Untitled
Abstract: No abstract text available
Text: Stand 3.2014 ePAPER 1.54“ - 200X200 PIXEL Vo rlä uf ig INKL. KONTROLLER SSD1606 MIT SPI Maße: 31,8 x 37,3 mm TECHNISCHE DATEN * * * * * * * * * * * * KONTRASTREICHSTE ePAPER LCD ANZEIGE WEITER BLINKWINKELBEREICH ELEKTROPHORETISCH-AKTIV-MATIRX DISPLAY ePAPER 1,54“ MIT 200x200 PIXEL
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200X200
SSD1606
D-82205
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200X200
Abstract: No abstract text available
Text: LC-A-B ●优质铝合金材料； ●适用于各种高精度电子天平等 ●天平台面尺寸：200X200 mm 额定容量（kg） 0.3,0.5,0.6,1,2,3,5 外 形 尺 寸 (Out Size) -技术参数(Technical data)-技术参数 单位 额定容量 Rated capacity
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200X200
/30min
3--15DC)
-20-v
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PD-97256
Abstract: GML edf ID 416M 16SYJQ045C 200X200
Text: PD-97256 16SYJQ045C SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 16A, 45V Major Ratings and Characteristics Characteristics Limits IF AV 16 VRRM 45 IFSM @ tp = 8.3ms half-sine 250 VF @ 16Apk, TJ =125°C 0.52 Description/Features Units The 16SYJQ045C Schottky rectifier has been expressly
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PD-97256
16SYJQ045C
16Apk,
16SYJQ045C
MIL-PRF-19500
PD-97256
GML edf ID 416M
200X200
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200X200
Abstract: 35SGQ045 c 1384
Text: PD -93963A 35SGQ045 SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 35 Amp, 45V Major Ratings and Characteristics Characteristics Description/Features 35SGQ045 Units IF AV 35 A VRRM 45 V IFSM @ tp = 8.3ms half-sine 300 A VF @ 35Apk, TJ =125°C 0.79 V TJ,Tstg Operating and storage -55 to 150
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-93963A
35SGQ045
35SGQ045
35Apk,
O-254AA
MIL-PRF-19500
200X200
c 1384
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16YQ045C
Abstract: 200X200
Text: PD - 94303C 16YQ045C SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 16A, 45V Major Ratings and Characteristics Description/Features Characteristics The 16YQ045C Schottky rectifier has been expressly designed to meet the rigorous requirements of hi-rel environments. It is packaged in the hermetic isolated
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94303C
16YQ045C
16YQ045C
O-257AA
MIL-PRF-19500
200X200
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3052p
Abstract: 3122P 3242p si-3242p 3152P SI-3122P SI-3052P SI-3152P SI3242P 2a86
Text: ●SI-3000P Series SI-3000P Series 3-Terminal, Dropper Type •Features • • • • TO-3P package 3-terminal regulator Output current: 2.0A Wide range of DC input voltage Built-in foldback overcurrent protection circuit ■Applications • For stabilization of the secondary stage of switching power supplies
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qSI-3000P
SI-3000P
SI-3242P)
SI-3122P)
3052p
3122P
3242p
si-3242p
3152P
SI-3122P
SI-3052P
SI-3152P
SI3242P
2a86
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ULM850-L2-PL-S0101U
Abstract: ULM850-PM-TN-S46FZP ULM850-VP-PL-S46XOP 894nm ULM850-PM-TN-S46XZP SM 850nm laser vcsel ulm tdlas vcsel SMD MAP 3959 ulm vcsel reference
Text: Single Mode VCSEL 850nm,TO46,0.5mW Ideal circular gaussian beam Built-in ESD protection structure High reliability, 10 years @ 85°C INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE CLASS 3B LASER PRODUCT ELECTRO-OPTICAL CHARACTERISTICS T=20°C unless otherw ise stated
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850nm
850nm-long-life-sm-vcsel
ULM850-L2-PL-S0101U
ULM850-PM-TN-S46FZP
ULM850-VP-PL-S46XOP
894nm
ULM850-PM-TN-S46XZP
SM 850nm laser vcsel ulm
tdlas
vcsel SMD
MAP 3959
ulm vcsel reference
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KTB688B
Abstract: KTD718
Text: SEMICONDUCTOR KTB688B TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. A N O FEATURES B Q K F Recommended for 45 50W Audio Frequency Amplifier Output Stage. R G H I C J Complementary to KTD718B. D E L MAXIMUM RATING Ta=25
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KTB688B
KTD718B.
KTB688B
KTD718
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KTD998
Abstract: transistor ktD998 KTD998 transistor KTB778 KTb778 datasheet
Text: SEMICONDUCTOR KTD998 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH POWER AMPLIFIER APPLICATION. FEATURES A C R ・Recommended for 45～50W Audio Frequency W F U E Amplifier Output Stage. W V M I K N D J L S T B G ・Complementary to KTB778. MAXIMUM RATING Ta=25℃
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KTD998
KTB778.
200x200x2mm
100x100x2mm
300x300x2mm
KTD998
transistor ktD998
KTD998 transistor
KTB778
KTb778 datasheet
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1N7069
Abstract: No abstract text available
Text: PD-94232C 35GQ100 JANS1N7069T1 JANTX1N7069T1 JANTXV1N7069T1 SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 35Amp, 100V Ref: MIL-PRF-19500/761 Major Ratings and Characteristics Characteristics Description/Features 1N7069T1 Units IF AV 35 A VRRM 100 V IFSM @ tp = 8.3ms half-sine
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PD-94232C
35GQ100
JANS1N7069T1
JANTX1N7069T1
JANTXV1N7069T1
35Amp,
MIL-PRF-19500/761
35Apk,
1N7069T1
1N7069
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Untitled
Abstract: No abstract text available
Text: カ タ ロ グ 印 ガス配管用管継手類 印 の製品が各所に使用されています。 ガスメータ継手P.13 ソフレミニ P.11 ポリエチレン ボールバルブP.19 EFチーP.5 ミニボールバルブP.19 PEトランジション継手P.5
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HL-K137-X
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EN2683B
Abstract: en2683 C5 100uf 25v LA4282 IC DIAGRAM LA4282
Text: Ordering number : EN2683B Monolithic Linear IC LA4282 For Use In Home Stereo, TV Applications 2-Channel 10W AF Power Amplifier Overview The LA4282 is an IC which seals a high-output power amplifier for TVs and monitors in a compact package. Features • High-power 2-channel AF power amplifier
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EN2683B
LA4282
LA4282
EN2683B
en2683
C5 100uf 25v
LA4282 IC DIAGRAM
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IRS30
Abstract: AC1500V IRS50
Text: Resistors And Resistive Applications IRS METAL CLAD ECONOMY RESISTOR The IRS30, IRS50 are slim and flat economical resistors. These models are ideal for applications where space and funds are at a premium. The most common applications for these models are motor
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IRS30,
IRS50
05ohms]
-55-200C
20Mohm
AC1500V,
-260ppm/C
30min.
IRS30
AC1500V
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16SYQ045C
Abstract: 200X200
Text: PD - 93981 16SYQ045C SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 16 Amp, 45V Major Ratings and Characteristics Characteristics Description/Features 16SYQ045C Units IF AV 16 A VRRM 45 V 250 A 0.85 V IFSM @ tp = 8.3ms half-sine VF @ 16Apk, TJ =125°C TJ,Tstg Operating and storage -55 to 150
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16SYQ045C
16SYQ045C
O-257AA
MIL-PRF-19500
200X200
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UZB6415
Abstract: UZB610 UZB6425 UZB501 UZB5015 UZB502 UZB5025 UZB6105 UZB641 UZB642
Text: UZB56.fm 9 y [ W Q O O O N S S œ @ ˛ j œ @ ª Q P R “ ULTRA-COMPACT PHOTOELECTRIC SENSORS UZB5/6 Series THE SOLUTION TO YOUR REQUIREMENTS! Miniaturization by Using Single Chip Optical IC! Clear Beam Spot by Using a Red LED Dot Light Source. The beam-receiving photodiode and the
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UZB56
SUS304)
551inch)
UZB6415
UZB610
UZB6425
UZB501
UZB5015
UZB502
UZB5025
UZB6105
UZB641
UZB642
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C365-2SR2
Abstract: led chip
Text: C365-2SR2 TECHNICAL DATA UV LED, Chip Die GaN C365-2SR2 is a 280x280 µm UV LED chip die, based on GaN material. On forward bias, it emits a radiation of typical 1.0-1.5 mW at a peak wavelength of 365 nm. Specifications • • • • Structure: Substrate:
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C365-2SR2
C365-2SR2
280x280
led chip
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C365-3SRA1
Abstract: led chip
Text: C365-3SRA1 TECHNICAL DATA UV LED high power chip die, 365nm Drawing All dimensions in µm Thickness: 120 µm ± 10 µm Storage Conditions Item Storage time Storage Temperature Storage Humidity Value 3 Months 5 … +35 °C 45 …85 % Specifications If=100mA, Ta=25°C
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C365-3SRA1
365nm
100mA,
C365-3SRA1
led chip
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3050J
Abstract: No abstract text available
Text: 1-1-1 Linear Regulator IC SI-3000J Series 5-Terminal, Full-Mold, Low Dropout Voltage Linear Regulator IC •Features ■Absolute Maximum Ratings • Compact full-mold package equivalent to TO220 Parameter • Output current: 2.0A • Low dropout voltage: VDIF ≤ 1V (at IO=2.0A)
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SI-3000J
SI-3050J
SI-3090J
SI-3120J/3150J
3050J
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HS-EMC200
Abstract: HS-EMC500 EMC200HN HS-EMC100 emc400 E255159 400W-500W HS-EMC120
Text: ALUMINIUM HOUSED METAL CLAD BRAKING RESISTORS T y p e : EMCH 100 \ \ 80 1 70 2 60 5 50 NX "ninn © \ T yp e : EMCV V S<5s\ NN 10 0 200 275 300 A m b ie n t te m p e ra tu re °C On Heat Sink 60W~500W HEATSINK SIZE 60W-120W : 200X200X3mm Free Air 60W~150W
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0W-120W
200X200X3mm
50W-300W
300X300X3mm
00W-500W
450X450X3mm
50W-1000W
600X600X3mm
AC1500V,
HS-EMC200VN
HS-EMC200
HS-EMC500
EMC200HN
HS-EMC100
emc400
E255159
400W-500W
HS-EMC120
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BBC OS 0,9 4A
Abstract: 07380 bbc os 0.9 4A
Text: lb T O S H I B A -CDISC R E T E / O P T O } 909725 0 TO SHI BA T D i 7E S O Q Ü Q 1371 fc, | bbC <DISCRETE/OPTO 0 7 379 2SB993 SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS) INDUSTRIAL APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS. POWER AMPLIFIER APPLICATIONS.
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2SB993
2SD1363
200X200X2mmA£
150Xl50X2mm
100X100X2mm
70x70x2mma£
35X35XlmmA^
25X25XlmmA^
BBC OS 0,9 4A
07380
bbc os 0.9 4A
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WLFT 404
Abstract: L203 WLFT 405
Text: Thermally conductive foil both sides adhesive - good thermal charactaristics double-sided adhesive layers replaces mechanical fastenings cuttings and cut-outs upon request art. WLFT 404 WLFT 404 WLFT 404 WLFT 404 WLFT 414 WLFT 414 no. R25 R50 R100 R200 R25
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100x100
100x200
200x200
100x200
WLFT 404
L203
WLFT 405
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2SC512
Abstract: 2SC510 2sc5126 2sc5 2SA510 2SC55 2SA512 AI 01234 2SA1943-O 2SC5 2sc510 toshiba
Text: 5 /U 3 > N P N = « ffi*0 B h 5 > 5 > *5 > PCT75ÍC SILICON NPN TRIPLE DIFFUSED TRANSISTOR (PCT PROCESS) o 'y + y ? m a O o H i g h F r e q u e n c y P ow e r A m p l i f i e r A p p l i c a t i o n s , o H igh V o l t a g e S w i t c h i n g and R e g u l a t o r A p p l i c a t i o n s .
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PCT75Ã
2SC510
2SC512
800mW
2SA510,
2SA512
2SA510
2SA512
2SC512
2sc5126
2sc5
2SC55
AI 01234
2SA1943-O 2SC5
2sc510 toshiba
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