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    35n60c

    Abstract: ixkp35n60c5m
    Text: IXKP 35N60C5M ID25 = 11.5 A VDSS = 600 V RDS on max = 0.1 Ω COOLMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions


    Original
    35N60C5M O-220 20080310a 35n60c ixkp35n60c5m PDF

    Untitled

    Abstract: No abstract text available
    Text: IXKP 10N60C5 COOLMOS * Power MOSFET ID25 = 10 A VDSS = 600 V RDS on max = 0.385 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB G D S G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS


    Original
    10N60C5 O-220 20080310a PDF

    Untitled

    Abstract: No abstract text available
    Text: IXKH 13N60C5 IXKP 13N60C5 COOLMOS * Power MOSFET ID25 = 13 A VDSS = 600 V RDS on max = 0.3 W N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-247 AD (IXKH) D G G D S S  D(TAB) TO-220 AB (IXKP) G D S Features MOSFET Symbol


    Original
    13N60C5 O-247 O-220 20080310a PDF

    Untitled

    Abstract: No abstract text available
    Text: IXKP 30N60C5M ID25 = 10 A VDSS = 600 V RDS on max = 0.125 Ω COOLMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions


    Original
    30N60C5M O-220 20080310a PDF