35n60c
Abstract: ixkp35n60c5m
Text: IXKP 35N60C5M ID25 = 11.5 A VDSS = 600 V RDS on max = 0.1 Ω COOLMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions
|
Original
|
PDF
|
35N60C5M
O-220
20080310a
35n60c
ixkp35n60c5m
|
Untitled
Abstract: No abstract text available
Text: IXKP 10N60C5 COOLMOS * Power MOSFET ID25 = 10 A VDSS = 600 V RDS on max = 0.385 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB G D S G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS
|
Original
|
PDF
|
10N60C5
O-220
20080310a
|
Untitled
Abstract: No abstract text available
Text: IXKH 13N60C5 IXKP 13N60C5 COOLMOS * Power MOSFET ID25 = 13 A VDSS = 600 V RDS on max = 0.3 W N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-247 AD (IXKH) D G G D S S D(TAB) TO-220 AB (IXKP) G D S Features MOSFET Symbol
|
Original
|
PDF
|
13N60C5
O-247
O-220
20080310a
|
Untitled
Abstract: No abstract text available
Text: IXKP 30N60C5M ID25 = 10 A VDSS = 600 V RDS on max = 0.125 Ω COOLMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 FP G D S G Preliminary data S Features MOSFET Symbol Conditions
|
Original
|
PDF
|
30N60C5M
O-220
20080310a
|