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    2001PGB200E

    Abstract: No abstract text available
    Text: 2001PGB200E Thyristors Gate Turn Off Thyristor GTO V(DRM) Max. (V)2.0k V(RRM) Max. (V)18 I(T) Rated Maximum (A)860² @Temp. (øC) (Test Condition) I(TSM) Max. (A)11k @ t(w) (s) (Test Condition) I(GT) Max. (A)3.0 V(GT) Max.(V)1.0 I(H) Max. (A) Holding Current40Â


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    2001PGB200E Current40Ã Current50m StyleTO-200var95W Code4-41 PDF