Untitled
Abstract: No abstract text available
Text: Coaxial ZASW-2-50DR+ ZASW-2-50DR High Isolation Switch 50Ω SPDT, TTL Driver, Reflective Maximum Ratings Features Operating Temperature Storage Temperature Input Power DC to 5000 MHz • wideband, DC to 5 GHz • integral TTL driver • high isolation, 82 dB typ. at 2 GHz
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ZASW-2-50DR+
ZASW-2-50DR
CY353
ZASW-2-50DR(
2002/95/EC)
ZASW-2-50DR
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RC0038
Abstract: Fast Recovery RC0038D
Text: SUM20F & FSMS thru SUM50F & FSMS Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Designer’s Data Sheet 0.5 AMP 2000-5000 VOLTS 180 nsec HIGH VOLTAGE
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SUM20F
SUM50F
RC0038D
RC0038
Fast Recovery
RC0038D
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2SD1457
Abstract: 2SD1457A NPN POWER DARLINGTON TRANSISTORS
Text: Inchange Semiconductor Product Specification 2SD1457 2SD1457A Silicon NPN Power Transistors DESCRIPTION ・With TO-3PFa package ・High DC current gain ・DARLINGTON ・High VCBO APPLICATIONS ・For power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to
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2SD1457
2SD1457A
2SD1457
2SD1457A
NPN POWER DARLINGTON TRANSISTORS
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2SC4350
Abstract: NPN POWER DARLINGTON TRANSISTORS
Text: Inchange Semiconductor Product Specification 2SC4350 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・High DC current gain ・DARLINGTON APPLICATIONS ・For high speed power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to
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2SC4350
O-220
O-220)
2SC4350
NPN POWER DARLINGTON TRANSISTORS
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aswa-2-50dr
Abstract: No abstract text available
Text: NON-CATALOG ASWA-2-50DR+ Surface Mount Switch ASWA-2-50DR 50Ω High Isolation, SPDT, Maximum Ratings Operating Temperature Features • high isolation, 50 dB typical at 5GHz • low insertion loss, 1 dB typical • integral TTL driver -20°C to 85°C Storage Temperature
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ASWA-2-50DR+
ASWA-2-50DR
DR788
2002/95/EC)
M113193
aswa-2-50dr
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DSPHEX
Abstract: TMS32025 TMS32050 addressing modes with examples SPRU011 SPRU014 SPRU018D SPRU052 TMS320 Tektronix asg 100 SPRU013
Text: TMS320C1x/C2x/C2xx/C5x Assembly Language Tools User’s Guide 1995 Microprocessor Development Systems Printed in U.S.A., March 1995 SDS SPRU018D TMS320C1x/C2x/C2xx/C5x Assembly Language Tools 1995 User’s Guide TMS320C1x/C2x/C2xx/C5x Assembly Language Tools
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TMS320C1x/C2x/C2xx/C5x
SPRU018D
DSPHEX
TMS32025
TMS32050 addressing modes with examples
SPRU011
SPRU014
SPRU018D
SPRU052
TMS320
Tektronix asg 100
SPRU013
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2SA1718
Abstract: No abstract text available
Text: SavantIC Semiconductor Product Specification 2SA1718 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·High DC current gain. ·Low collector saturation voltage. ·DARLINGTON APPLICATIONS ·Ideal for motor drviers and solenoid drivers application
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2SA1718
O-220F
O-220F)
-30mA;
-100V
2SA1718
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Untitled
Abstract: No abstract text available
Text: Preliminary Product Description SGA-3286 Stanford Microdevices’ SGA-3286 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 2.7V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT
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SGA-3286
50-ohm
SGA-3286
DC-3600
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Untitled
Abstract: No abstract text available
Text: Preliminary Product Description SGA-6389 Stanford Microdevices’ SGA-6389 is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT process featuring 1 micron emitters with FT up to
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SGA-6389
50-ohm
SGA-6389
DC-3000
EDS-100620
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SGA-6289
Abstract: No abstract text available
Text: Preliminary Product Description SGA-6289 Stanford Microdevices’ SGA-6289 is a high performance cascadeable 50-ohm amplifier designed for operation voltages as low as 4.2V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT
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SGA-6289
50-ohm
SGA-6289
DC-3500
EDS-100619
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Stanford amplifier
Abstract: No abstract text available
Text: Preliminary Product Description SGA-4286 Stanford Microdevices’ SGA-4286 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.3V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT
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SGA-4286
50-ohm
SGA-4286
DC-3500
Stanford amplifier
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Untitled
Abstract: No abstract text available
Text: Preliminary Product Description SGA-4486 Stanford Microdevices’ SGA-4486 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.3V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT
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SGA-4486
50-ohm
SGA-4486
DC-2000
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Stanford amplifier
Abstract: No abstract text available
Text: Preliminary Product Description SGA-2286 Stanford Microdevices’ SGA-2286 is a high performance cascadeable 50-ohm amplifier designed for operation from a 2.7-volt supply. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT
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SGA-2286
50-ohm
SGA-2286
DC-3500
Stanford amplifier
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Untitled
Abstract: No abstract text available
Text: SUM20UF & UFSMS thru SUM50UF & UFSMS Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com Designer’s Data Sheet 0.4 AMP 2000-5000 VOLTS 60 nsec HIGH VOLTAGE
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SUM20UF
SUM50UF
RC0040D
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2SB950A
Abstract: 2SB950 2SD1276 2SD1276A
Text: Power Transistors 2SB950, 2SB950À 2SB950, 2SB950A Package Dimensions U n it I mm 4.4max. 10.2m ax, Silicon PNP Epitaxial Planar Darlington Type 5.7iria*. 2.9max. Power Amplifier, Switching Complementary Pair with 2SD 1276, 2S D 1276A * 3 .1 ± 0 .1 • Features
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2SB950,
2SB950Ã
2SB950A
2SD1276,
2SD1276A
2SB950
2SB950A
2SD1276
2SD1276A
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2SB939
Abstract: 2SB939A 2SD1262 2SD1262A high current Darlington pair IC
Text: Power Transistors 2SB939, 2SB939A 2SB939, 2SB939A Package Dimensions Silicon PNP Epitaxial Planar Darlington Type Medium Speed Power Switching Complementary Pair with 2SD 1262, 2SD 1262A • Features • High DC current gain hFE • High speed switching
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2SB939,
2SB939A
2SD1262,
2SD1262A
2SB939
2SB939A
2SD1262
2SD1262A
high current Darlington pair IC
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2sb117
Abstract: 2SB1179 2SB1179A 2SD1749 2SD1749A
Text: Power T ransistors 2SB1179, 2SB1179A 2SB1179, 2SB1179A Package Dim ensions Unit I mm Silicon PNP Epitaxial Planar Darlington Type 3.7max. 7.3max. Pow er Amplifier, Switching C om plem entary Pair with 2 S D 1 7 4 9 , 2 S D 1 7 4 9 A • Features 0.9 ± 0 .1
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2SB1179,
2SB1179A
2SD1749,
2SD1749A
2SB1179
2sb117
2SB1179A
2SD1749
2SD1749A
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Untitled
Abstract: No abstract text available
Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR KSB794/795 AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS Characteristic Collector- Base Voltage Symbol : KSB794 Rating Unit V cbO - 60 V VcBO - 80 V VcEO - 60 V VcEO
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KSB794/795
KSB794
KSB795
KSB794
350ns,
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Untitled
Abstract: No abstract text available
Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR KSB794/795 AUDIO FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS C haracteristic Collector- Base Voltage Symbol : KSB794 : KSB795 Collector- Emitter Voltage : KSB794 Rating Unit
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KSB794/795
KSB795
KSB794
300jis,
KSB794
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SD1457, 2SD1457A 2SD1457, 2SD1457A Silicon NPN Triple-Diffused Planar Darlington Type Power A m plifier • Features • High DC current gain Iif e • High collector-base voltage (V cbo ) • “Full Pack” package for simplified mounting on a heat sink with one
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2SD1457,
2SD1457A
2SD1457
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2SD1630
Abstract: No abstract text available
Text: SEC i l > h> y< '7— b =7 7 .9 Darlington Power Transistor 2SD1630 9 N P N l fc: JV W ii/ i; □ > h = 7 > i> i&mfcmtimm, 7 .9 { & & & * * ? * • > * & U L liiJB NPN ^ ',icon EP'taxial Darlington Transistor Audio Frequency Power Amplifier Low Speed Switching
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2SD1630
2sd1630ii,
2SD1630
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Untitled
Abstract: No abstract text available
Text: Product Description SGA-3286 Stanford M icrodevices’ SG A-3286 is a high performance cascadeable 50-ohm am plifier designed for operation at voltages as low as 2.7V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT
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SGA-3286
50-ohm
DC-3600
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Untitled
Abstract: No abstract text available
Text: Product Description SGA-5286 Stanford Microdevices’ SGA-5286 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.5V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT process featuring 1 micron emitters with Ft up to 65 GHz.
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SGA-5286
SGA-5286
50-ohm
DC-4000
EDS-100610
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Untitled
Abstract: No abstract text available
Text: Product Description SGA-5489 Stanford Microdevices’ SGA-5489 is a high performance cascadeable 50-ohm amplifier designed for operation at voltages as low as 3.5V. This RFIC uses the latest Silicon Germanium Heterostructure Bipolar Transistor SiGe HBT process featuring 1 micron emitters with Ft up to 65 GHz.
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SGA-5489
SGA-5489
50-ohm
DC-2400
EDS-100618
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