2N3632
Abstract: 2N3375 2N3373
Text: , LJnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N3375 2N3632/2N3733 RF & MICROWAVE TRANSISTORS VHF-UHF CLASS C WIDE BAND 130 TO 400MHz FREQUENCY 28V VOLTAGE 2.5TO13.5W POWER OUT HIGH POWER GAIN
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2N3375
2N3632/2N3733
400MHz
5TO13
2N3373
2N3632
2N3733
-200mA
Vca-30V
250mA
2N3632
2N3375
2N3373
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TH430
Abstract: SD1728 M177
Text: SD1728 TH430 RF & Microwave transistors HF SSB application Features • 13.56MHz ■ 44V ■ Gold metallization ■ Common emitter ■ POUT = 200W with 15dB gain Description The SD1728 is a 50V epitaxial silicon NPN planar transistor designed primarily for SSB and
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SD1728
TH430)
56MHz
SD1728
TH430
TH430
SD1728 M177
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c1969 transistor
Abstract: C1969 transistor C1969 ssm2164 SSM2024 SSM2164P SSM2164S DAC8426 equivalent compandor op275
Text: a FEATURES Four High Performance VCAs in a Single Package 0.02% THD No External Trimming 120 dB Gain Range 0.07 dB Gain Matching Unity Gain Class A or AB Operation APPLICATIONS Remote, Automatic, or Computer Volume Controls Automotive Volume/Balance/Faders
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SSM2164
SSM2164
16-Pin
R-16A)
C1969
c1969 transistor
transistor C1969
SSM2024
SSM2164P
SSM2164S
DAC8426 equivalent
compandor
op275
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ssm2164
Abstract: SSM2024 C1969
Text: BACK a FEATURES Four High Performance VCAs in a Single Package 0.02% THD No External Trimming 120 dB Gain Range 0.07 dB Gain Matching Unity Gain Class A or AB Operation APPLICATIONS Remote, Automatic, or Computer Volume Controls Automotive Volume/Balance/Faders
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SSM2164
SSM2164
16-Pin
R-16A)
C1969
SSM2024
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SSM2164
Abstract: SSM2024 C1969 N-16 OP176 OP275 OP482 SSM2164P SSM2164S C601K
Text: a FEATURES Four High Performance VCAs in a Single Package 0.02% THD No External Trimming 120 dB Gain Range 0.07 dB Gain Matching Unity Gain Class A or AB Operation APPLICATIONS Remote, Automatic, or Computer Volume Controls Automotive Volume/Balance/Faders
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SSM2164
SSM2164
16-Pin
R-16A)
C1969
SSM2024
N-16
OP176
OP275
OP482
SSM2164P
SSM2164S
C601K
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Untitled
Abstract: No abstract text available
Text: a FEATURES Four High Performance VCAs in a Single Package 0.02% THD No External Trimming 120 dB Gain Range 0.07 dB Gain Matching Unity Gain Class A or AB Operation APPLICATIONS Remote, Automatic, or Computer Volume Controls Automotive Volume/Balance/Faders
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SSM2164
SSM2164
16-Pin
R-16A)
C1969â
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Arco 426
Abstract: No abstract text available
Text: SD1727 THX15 RF POWER BIPOLAR TRANSISTORS HF SSB APPLICATIONS FEATURES SUMMARY • OPTIMIZED FOR SSB Figure 1. Package ■ 30 MHz ■ 50 VOLTS ■ IMD –30 dB ■ COMMON EMITTER ■ GOLD METALLIZATION ■ POUT = 150 W PEP MIN. WITH 14 dB GAIN DESCRIPTION
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SD1727
THX15)
SD1727
Arco 426
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HP RF TRANSISTOR GUIDE
Abstract: MRF286 MRF210305 MHL9838 mrf284 Curtice linear amplifier 470-860 Base Station Drivers motorola MRF High frequency MRF transistor
Text: SG384/D REV 7 RF LDMOS Infrastructure Technology Selector Guide Motorola RF LDMOS Product Family As digital standards increasingly dominate the wireless communication market, Motorola’s RF LDMOS technology has become the industry’s technology of choice due to its superior linearity, gain and efficiency characteristics. Motorola’s RF LDMOS
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SG384/D
HP RF TRANSISTOR GUIDE
MRF286
MRF210305
MHL9838
mrf284
Curtice
linear amplifier 470-860
Base Station Drivers
motorola MRF
High frequency MRF transistor
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mmic
Abstract: mwtinc MWT-A970 "Microwave Diodes" MWT-7 wirebond MIL-PRF-38534 fine leak MwT-LP770 MwT-170 LN-141510-H4
Text: hi-rel and space product screening MicroWave Technology An IXYS Company High-Reliability and Space-Reliability Screening Options Space Qualified Low Noise Amplifiers Model Pkg New Freq Linear Gain Gain Fitness Input RL Output RL GHz Typ (dB) Typ +/-(dB)
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LN-162315-H4
LN-141510-H4
LN-141526-H4
mmic
mwtinc
MWT-A970
"Microwave Diodes"
MWT-7 wirebond
MIL-PRF-38534 fine leak
MwT-LP770
MwT-170
LN-141510-H4
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2sd1070
Abstract: No abstract text available
Text: SD1070 RF & MICROWAVE TRANSISTORS RF PRODUCTS DIVISION P RODUCT P REVIEW DESCRIPTION KEY FEATURES ! ! ! ! ! ! 130 - 400 MHz 28 Volts High Power Gain High Efficiency Common Emitter POUT = 13.5 W Min. @ 175 MHz IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
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SD1070
oscil12-20
MSC1642
2sd1070
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2N4427 equivalent bfr91
Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
Text: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability
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OCR Scan
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PoweS3666
MRF3866
2N2857
2N3866
2N5943
MRF904
MRF571
2N4958
2N3160
2N5583
2N4427 equivalent bfr91
bfr90 equivalent
2N5503
MRA1600-30
TPV-595A
2N3553 equivalent
MRF477 equivalent
MRA0500-19L
2N6084 equivalent
MOTOROLA TRANSISTOR MRF239
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ssm2164
Abstract: sm2024 OP482 equivalent
Text: ANALOG DEVICES FEATURES Four High Performance VCAs in a Single Package 0.02% THD No External Trim m ing 120 dB Gain Range 0.07 dB Gain Matching Unity Gain Class A or AB Operation Low Cost Quad Voltage Controlled Amplifier SSM2164 FUNCTIONAL BLOCK DIAGRAM
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OCR Scan
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SSM2164
SSM2164
SSM2024
SSM21B4
16-Pin
R-16A)
sm2024
OP482 equivalent
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PDF
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4431 8 PIN
Abstract: 2N4430 2N4429 2N4431 2NS4429 to-117a
Text: li _n_Mm ra. m 140 Commerce Drive m lC rU S & n il Jet: Montgomeryvilie, PA 18936 215 631-9840 2N4429 -> 4431 s P&msfsxf ò y TaeR rtoissy RF & MICROWAVE POWER TRANSISTORS MICROWAVE POWER TRANSISTORS FOR CLASS C APPLICATIONS FEATURES HIGH POWER GAIN 2N4431
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OCR Scan
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2N4429
2N4431
2N4430
2NS4429
O-117A
1000MHz,
--300mW
75rnW
2N4431
4431 8 PIN
2N4430
2NS4429
to-117a
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PDF
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2164 20 pin
Abstract: v 2164 m
Text: ANALOG ► DEVICES Low Cost Quad Voltage Controlled Amplifier SSM2164 FEATURES Four High Performance VCAs in a Single Package 0.02% THD No External Trim m ing 120 dB Gain Range 0.07 dB Gain M atching U nity Gain Class A or AB Operation FUNCTIONAL BLOCK DIAGRAM
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OCR Scan
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SSM2164
16-Pin
R-16A)
2164 20 pin
v 2164 m
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2SB1362
Abstract: 2SD2052
Text: Power Transistors 2SB1362 2SB1362 Silicon PNP Triple-Diffused Planar Type Package Dimensions High Power Amplifier Complementary Pair with 2SD2052 • Features • Very good linearity of DC current gain Fife • Wide area of safety operation (ASO) • High transition frequency (fr)
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2SB1362
2SD2052
13SflSE
2SB1362
2SD2052
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2SD1990
Abstract: IC003
Text: 2SD1990 Power Transistors 2SD1990 Silicon NPN Triple-Diffused Planar Type Power Switching Package Dimensions U n it ! m m • Features • High speed switching • Good linearity of DC current gain I ì f e • Large collector power dissipation (Pc) ,10.5 + 0.5
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2SD1990
O-220
bT32052
2SD1990
IC003
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2SB1317
Abstract: 2SD1975
Text: Power Transistors 2SB1317 2SB1317 Silicon PNP Triple-Diffused Planar Type High Pow er Am plifier C om plem entary Pair with 2 S D 1 9 7 5 Package Dim ensions • Features • V ery good linearity of DC cu rre n t gain hFE • Wide area of safety operation (ASO)
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2SB1317
2SD1975
20-5max.
2SB1317
2SD1975
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SB1063 2SB1063 Silicon PNP Planar Type Package Dimensions High Power Amplifier Complementary Pair with 2SD1499 • Features • V ery good linearity of DC current gain Ii f e • Wide area of safety operation (ASO) • High transition frequency (ft)
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OCR Scan
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2SB1063
2SD1499
13SaS2
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PDF
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SD2140 2SD2140 Silicon NPN Triple-Diffused Planar Type • Package Dimensions High Power Amplifier Complementary Pair with 2SB1372 ■ Features • V ery good lin e a rity of DC c u r re n t gain I i f e • W ide a re a of good lin e a rity (ASO)
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OCR Scan
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2SD2140
2SB1372
2SD2i40
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PDF
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NJ 20 U1 W
Abstract: 2SB1250 2SD1890
Text: Power Transistors 2SD1890 2S D 1890 Silicon NPN Triple-Diffused Planar Darlington Type • Power Amplifier Complementary Pair with 2SB1250 Package Dimensions ■ Features • S w itchable for 25W hi-fi output • High DC current gain Iif e : 50 0 0 —30000
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OCR Scan
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2SD1890
2SB1250
10Vx02A
NJ 20 U1 W
2SB1250
2SD1890
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2SB1421
Abstract: 2SD2140
Text: Power Transistors 2SB1421 2SB1421 Silicon PNP Triple-Diffused Planar Type High Pow er Am plifier C om plem entary Pair with 2 S D 2 1 4 0 • Features • V ery good linearity of DC c u rre n t gain Iif e • Wide area of safety operation (ASO) • High transition frequency (f-r)
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OCR Scan
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2SB1421
2SD2140
bT32052
GGlb33D
2SB1421
2SD2140
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PDF
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2SD1990
Abstract: No abstract text available
Text: Power Transistors 2SD1990 2SD1990 Silicon NPN Triple-Diffused Planar Type Package Dimensions Power Switching • Features • H igh sp e e d sw itch in g • G ood lin earity of DC c u r r e n t gain Iìf e • L a rg e c o lle c to r p o w e r d issip atio n (P c)
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OCR Scan
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2SD1990
2SD1990
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transistors 1UW
Abstract: 2SD2151
Text: Power Transistors 2SD2151 2SD2151 Silicon NPN Epitaxial Planar Type Package Dimensions Power Switching • Features • • • • Low collector-em itter saturation voltage VcEisatj Good linearity of DC current gain (hFt) High collector current (Ic) “Full Pack” package for simplified m ounting on a heat sink with one
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OCR Scan
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2SD2151
bq3gfl55
transistors 1UW
2SD2151
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PDF
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2SB939
Abstract: 2SB939A 2SD1262 2SD1262A high current Darlington pair IC
Text: Power Transistors 2SB939, 2SB939A 2SB939, 2SB939A Package Dimensions Silicon PNP Epitaxial Planar Darlington Type Medium Speed Power Switching Complementary Pair with 2SD 1262, 2SD 1262A • Features • High DC current gain hFE • High speed switching
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OCR Scan
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2SB939,
2SB939A
2SD1262,
2SD1262A
2SB939
2SB939A
2SD1262
2SD1262A
high current Darlington pair IC
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