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    2.7 3.5 S BAND Search Results

    2.7 3.5 S BAND Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ADL5801ACPZ-R7 Analog Devices Wide Band Active Mixer Visit Analog Devices Buy
    HMC7357LP5GE Analog Devices C-Band PA Visit Analog Devices Buy
    HMC7357LP5GETR Analog Devices C-Band PA Visit Analog Devices Buy
    ADRF6520ACPZ-R7 Analog Devices E-Band/V-Band Baseband Prog Fi Visit Analog Devices Buy
    ADRF6520ACPZ Analog Devices E-Band/V-Band Baseband Prog Fi Visit Analog Devices Buy

    2.7 3.5 S BAND Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mgfs44v2735

    Abstract: No abstract text available
    Text: < L/S band internally matched power GaAs FET > MGFS44V2735 2.7 – 3.5 GHz BAND / 24W DESCRIPTION unit : m m OUTLINE The MGFS44V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFS44V2735 MGFS44V2735 -45dBc

    MGFS45V2735

    Abstract: No abstract text available
    Text: < L/S band internally matched power GaAs FET > MGFS45V2735 2.7 – 3.5 GHz BAND / 30W DESCRIPTION unit : m m OUTLINE The MGFS45V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFS45V2735 MGFS45V2735 -45dBc

    Untitled

    Abstract: No abstract text available
    Text: < L/S band internally matched power GaAs FET > MGFS45V2735 2.7 – 3.5 GHz BAND / 30W DESCRIPTION unit : m m OUTLINE The MGFS45V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFS45V2735 MGFS45V2735 -45dBc

    Untitled

    Abstract: No abstract text available
    Text: < L/S band internally matched power GaAs FET > MGFS44V2735 2.7 – 3.5 GHz BAND / 24W DESCRIPTION unit : m m OUTLINE The MGFS44V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFS44V2735 MGFS44V2735 -45dBc

    Untitled

    Abstract: No abstract text available
    Text: Part Number: ILD2735M120 Preliminary Integra TECHNOLOGIES, INC. S-Band Radar Transistor Silicon LDMOS FET  High Power Gain  Excellent thermal stability  Gold Metal Part number ILD2735M120 is designed for S-Band radar applications operating over the 2.7 – 3.5 GHz instantaneous


    Original     		PDF ILD2735M120 ILD2735M120 300us ILD2735M120-REV-PR1-DS-REV-A

    ROGERS DUROID

    Abstract: BLS6G2735L-30
    Text: BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor Rev. 3 — 24 September 2012 Product data sheet 1. Product profile 1.1 General description 30 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.5 GHz. Table 1.


    Original     		PDF BLS6G2735L-30; BLS6G2735LS-30 BLS6G2735L-30 6G2735LS-30 ROGERS DUROID

    Untitled

    Abstract: No abstract text available
    Text: BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor Rev. 1 — 11 October 2011 Objective data sheet 1. Product profile 1.1 General description 30 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.5 GHz. Table 1.


    Original     		PDF BLS6G2735L-30; BLS6G2735LS-30 BLS6G2735L-30 6G2735LS-30

    Untitled

    Abstract: No abstract text available
    Text: BLS6G2735L-30; BLS6G2735LS-30 S-band LDMOS transistor Rev. 2 — 4 September 2012 Preliminary data sheet 1. Product profile 1.1 General description 30 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.5 GHz. Table 1.


    Original     		PDF BLS6G2735L-30; BLS6G2735LS-30 BLS6G2735L-30 6G2735LS-30

    Untitled

    Abstract: No abstract text available
    Text: HMC279MS8G v02.0701 GaAs MMIC DRIVER AMPLIFIER 2.5 - 4.2 GHz AMPLIFIERS - SMT 8 D E U N I T N O T C C S U I D D O PR Typical Applications Features The HMC279MS8G is ideal for: High Gain: 36 dB • 2.6 - 2.7 GHz MMDS Psat Output Power: +14 dBm • 3.5 GHz Wireless Local Loop


    Original     		PDF HMC279MS8G HMC279MS8G

    ATR3515

    Abstract: ATR3515-PEP ATR3515-PEQ driver amplifier at 5GHz for Wlan
    Text: Features • • • • • • • Frequency Range 4.9 GHz to 5.9 GHz Supply-voltage 2.7 V to 3.6 V 3.5% EVM at 19 dBm Output Power at 54 Mbit/s OFDM 25.5 dBm P1dB On-chip Power Detector with 25 dBm Dynamic Range Power-down Mode and Biasing Control Low Profile Lead-free Plastic Package QFN16 4 x 4 × 0.9 mm


    Original     		PDF QFN16 ATR3515 4514I ATR3515 ATR3515-PEP ATR3515-PEQ driver amplifier at 5GHz for Wlan

    2904 SMD IC

    Abstract: SMD m7 spice model diode electret condenser microphone preamplifier LMC662 equivalent spice model smd transistor m6 LM397 h LM6142 model SPICE LM146 LM614 8 pin lmc6762
    Text: Precision, low voltage, low power amplifier and comparator products Selection guide Winter 2004 RF detection and power loop control Part number Operating voltage range [V] Supply current typ. [mA] Input frequency range [GHz] Slew Band- Detection Detection Output Shut- Number Package Temp


    Original     		PDF LMV248 LQ-16 LMV243 LMV242 LMC6041 2904 SMD IC SMD m7 spice model diode electret condenser microphone preamplifier LMC662 equivalent spice model smd transistor m6 LM397 h LM6142 model SPICE LM146 LM614 8 pin lmc6762

    TD173

    Abstract: No abstract text available
    Text: TD/TN Series Microwave Noise Tubes & Noise Sources Features • Excess noise ratios ENR : up to 20dB • Broad bandwidth • Excellent long term stability • Life up to 20,000 hours • AC, DC, or pulsed operation Description High Energy Devices’ TD Series of gas discharge


    Original     		PDF

    MGFS45V2735

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2735 2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED GaAs FET OUTLINE FEATURES 2MIN DESCRIPTION The MGFS45V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFS45V2735 MGFS45V2735 -45dBc 25deg

    MGFS45V2735

    Abstract: 051 166
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFS45V2735 2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED GaAs FET O U TLIN E FEATURES 2M IN DESCRIPTION The MGFS45V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 GHz band amplifiers. The hermetically sealed metal-ceramic


    Original     		PDF MGFS45V2735 MGFS45V2735 -45dBc 051 166

    Untitled

    Abstract: No abstract text available
    Text: TLV2620, TLV2621, TLV2622, TLV2623, TLV2624, TLV2625, TLV262xA FAMILY OF LOW-POWER WIDE BANDWIDTH SINGLE SUPPLY OPERATIONAL AMPLIFIERS WITH SHUTDOWN SLOS251B – DECEMBER 2000 – REVISED APRIL 2001 D D + – DIFFERENTIAL VOLTAGE AMPLIFICATION AND PHASE vs


    Original     		PDF TLV2620, TLV2621, TLV2622, TLV2623, TLV2624, TLV2625, TLV262xA SLOS251B OT-23 TLV2620/1)

    Untitled

    Abstract: No abstract text available
    Text: TLV2620, TLV2621, TLV2622, TLV2623, TLV2624, TLV2625, TLV262xA FAMILY OF LOW-POWER WIDE BANDWIDTH SINGLE SUPPLY OPERATIONAL AMPLIFIERS WITH SHUTDOWN SLOS251B – DECEMBER 2000 – REVISED APRIL 2001 D D + – DIFFERENTIAL VOLTAGE AMPLIFICATION AND PHASE vs


    Original     		PDF TLV2620, TLV2621, TLV2622, TLV2623, TLV2624, TLV2625, TLV262xA SLOS251B OT-23 TLV2620/1)

    A2723

    Abstract: No abstract text available
    Text: GaAs INTEGRATED CIRCUIT µPG2158T5K L, S-BAND SPDT SWITCH DESCRIPTION The µPG2158T5K is a GaAs MMIC for L, S-band SPDT Single Pole Double Throw switch which was developed for mobile phone and another L, S-band application. This device can operate 2 control switching by control voltage 1.8 to 5.3 V. This device can operate frequency from


    Original     		PDF PG2158T5K PG2158T5K A2723

    FMS2031-001

    Abstract: FMS2031-001-EB FMS2031-001-TB FMS2031-001-TR
    Text: Pilot Data Sheet 2.1 FMS2031-001 10 Watt GaAs Wide Band SPDT Switch Features: ANT 3x3x0.9mm Packaged pHEMT Switch Ideal for WiMax, L, S, and C-band digital cellular, and WLAN applications High isolation, 36dB typ at 3.5GHz Low insertion loss, 0.5dB typ at 2.5GHz


    Original     		PDF FMS2031-001 42dBm 35dBm FMS2031-001 MIL-STD-1686 MILHDBK-263. FMS2031-001-TR FMS2031-001-TB FMS2031-001-EB FMS2031-001-EB FMS2031-001-TB FMS2031-001-TR

    GRM1555C1H2R2JZ35E

    Abstract: GJM1555C1H5R6CB01E GRM1555C1H4R7JZ35E GJM1555C1H120JB01E
    Text: AMPLIFIERS PRELIMINARY DATA SHEET SKY65111-348LF: ISM 600–1100 MHz Band 2 Watt InGaP HBT Power Amplifier Features Block Diagram Optimized for 800–1100 MHz operation ● Output power greater than 33 dBm @915 MHz ● 3.5 V nominal operating voltage ● Integrated analog power control voltage, V


    Original     		PDF SKY65111-348LF: SKY65111-348LF GRM1555C1H2R2JZ35E GJM1555C1H5R6CB01E GRM1555C1H4R7JZ35E GJM1555C1H120JB01E

    FMS2031-001

    Abstract: FMS2031-001-EB FMS2031-001-TB FMS2031-001-TR SPDT SWITCH 6 GHZ 1 WATT
    Text: Production 3.0 FMS2031-001 10 Watt GaAs Wide Band SPDT Switch Features: ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ANT 3x3x0.9mm Packaged pHEMT Switch Ideal for WiMax, L, S, and C-band digital cellular, and WLAN applications High isolation, 36dB typ at 3.5GHz Low insertion loss, 0.5dB typ at 2.5GHz


    Original     		PDF FMS2031-001 42dBm 35dBm FMS2031-001 MIL-STD-1686 MILHDBK-263. FMS2031-001-TR FMS2031-001-TB FMS2031-001-EB FMS2031-001-EB FMS2031-001-TB FMS2031-001-TR SPDT SWITCH 6 GHZ 1 WATT

    MGFS45V2735

    Abstract: No abstract text available
    Text: M IT S U B IS H I S E M IC O N D U C T O R < G a A s F E T > MGFS45V2735 2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED G a As FET DESCRIPTION The M G FS45V2735 is an internally impedance-matched GaAs power FET especially designed for use in 2.7 - 3.5 G H z band amplifiers. The hermetically sealed metal-ceramic


    OCR Scan     		PDF MGFS45V2735 MGFS45V2735 -45dBc 25deg

    Untitled

    Abstract: No abstract text available
    Text: S e m i c o n d u c t o r tß L o w Voltage, L o w Power, R-to-R Output, 5 M H z Op A m p s General Description Guaranteed 2.5 V, 2.7 V and 5 V Performance Maximum VOS 3.5 mV Guaranteed VOS Temp. Drift 1 uW* C GBW product 2.7 V 5 MHz • ■ ■ ■ ■


    OCR Scan     		PDF LMV821 LMV822 LMV821 LMV821/LMV822/LMV824

    MGFS44V2735

    Abstract: Q-35 2.7 3.5 s band
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> PRELIM INARY Notice: This is not a final specification. Some parametric lim its are subject to change. MGFS44V2735 2.7 - 3.5GHz BAND 25W INTERNALLY MATCHED GaAs FET DESCRIPTION unit : mm OUTLINE The MGFS44V2735 is an internally impedance-matched


    OCR Scan     		PDF MGFS44V2735 MGFS44V2735 -45dBc 20th/Jan. Q-35 2.7 3.5 s band

    MX0912B250Y

    Abstract: RV2833B5X RV3135B5X RX1214B150W RX1214B300Y RZ1214B125Y RZ1214B35Y RZ1214B65Y RZ2731B16W MRB11175Y
    Text: N AMER P H I L I P S / D I S C R E T E 5SE 3> • bbSH^! OOltiSBl 0 ■ T'-J3 3 “' ^ / Power Devices 53 MICROWAVE TRANSISTORS TYPE NO. PACKAGE OUTLINE f GHz Vcc (Vi ' U m @ DUTY CYCLE I (%> . Pi. (W> A - ; VC (%) RADAR PULSED L-BAND RZ1214B35Y FO-57C 1.2 - 1.4


    OCR Scan     		PDF RZ1214B35Y FO-57C RZ1214B65Y RZ1214B125Y RX1214B150W FO-91 RX1214B300Y MX0912B250Y RV2833B5X RV3135B5X RZ2731B16W MRB11175Y