SBS006M
Abstract: No abstract text available
Text: SBS006M SPICE PARAMETER DIODE model : DIODE Parameter Value IS 8.80E-06 BV 40.0 ISR 8.00E-06 VJ 0.48 TT 2.00E-09 TRS 2.60E-03 Temp = 27 deg Date : 2003/10/7 Parameter N IBV NR M EG Value 1.02 1.00E-03 1.20 0.48 0.53 Parameter RS CJO FC XTI Value 0.23 7.20E-11
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SBS006M
80E-06
00E-06
00E-09
60E-03
00E-03
20E-11
SBS006M
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100fc
Abstract: No abstract text available
Text: SM5301AS 3-channel Video Buffer with Built-in Wideband Filters OVERVIEW Top view pre lim ina • ■ ■ ■ ■ ■ APPLICATIONS ■ ■ ■ ■ Set-top boxes Digital television DVD players Projector ORDERING INFORMATION Device Package SM5301AS 28-pin HSOP
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SM5301AS
37MHz
28-pin
NP0202AE
100fc
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SM5301
Abstract: SM5301AS
Text: SM5301AS 3-channel Video Buffer with Built-in Wideband Filters OVERVIEW The SM5301AS is a video buffer with built-in video signal bandwidth lowpass filter. The filter employs a 5order Butterworth lowpass filter configuration. The filter characteristics have been optimized for minimal overshoot and flat group delay, it has a variable cutoff frequency and guaranteed driver-stage channel gain difference and phase difference values.
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SM5301AS
SM5301AS
NC0202AE
SM5301
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BJT IC Vce
Abstract: NPN Transistor Pair HFA3134 npn tr array pspice high frequency transistor npn 8 transistor array pspice model MM3134 525E
Text: HFA3134 8.5GHz NPN Matched Transistor Pair SPICE Model June 1998 MM3134 Introduction Parameters Not Modeled This application note describes the SPICE transistor model for the bipolar devices that comprise the HFA3134, Ultra High Frequency Transistor Array. This array is fabricated with
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HFA3134
MM3134
HFA3134,
BJT IC Vce
NPN Transistor Pair
npn tr array
pspice high frequency transistor
npn 8 transistor array
pspice model
MM3134
525E
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BJT IC Vce
Abstract: npn spice model This application note describes the SPICE transistor model HFA3134
Text: HFA3134 8.5GHz NPN Matched Transistor Pair SPICE Model June 1998 [ /Title MM3 134 /Subject (HFA3 134 8.5GH z NPN Matche d Transistor Pair SPICE Model) /Autho r () /Keywords (Intersil Corporation, semiconductor, ) /Creator () /DOCI NFO MM3134 Introduction
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HFA3134
MM3134
HFA3134,
BJT IC Vce
npn spice model
This application note describes the SPICE transistor model
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MOSFETs
Abstract: poly silicon resistor AOTF10N60
Text: High Voltage Power MOSFET switching parameters: Testing Methods for Guaranteeing datasheet limits Anup Bhalla, Fei Wang Introduction Power MOSFET datasheets will usually show typical and min-max values for Rg, Ciss, Crss, Coss, and also show values for gate charge broken down into Qgs, Qgd, Qg. It is also customary to show values for switching times during resistive
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VEC2606
Abstract: bsim3v3 900E-12
Text: VEC2606_Pch SPICE PARAMETER Pch MOS FET model : BSIM3V3.2 Parameter Value LEVEL 8 3.2 VERSION VTH0 -1.74 NLX 1.70E-07 DVT2 -0.01 UB 1.00E-21 AGS 0.48 2.98E+06 RDSW WINT 0.78 NFACTOR CDSCD PCLM 1.70 DROUT 0.96 PVAG 0.01 MOBMOD 1 CAPMOD 3 CGDO 1.00E-11 CGDL
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VEC2606
70E-07
00E-21
00E-11
80E-10
0E-09
80E-07
796596E-6
796596E-12
2E-03
bsim3v3
900E-12
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Untitled
Abstract: No abstract text available
Text: MIC Vishay Electro-Films Thin Film Microwave Resistor FEATURES • Small chip size: 0.020 x 0.040 inches MICROWAVE RESISTORS Product may not be to scale • Microwave resistance range: 20Ω - 1kΩ • Overall resistance range: 2Ω to 20kΩ The MIC resistor chips on alumina are designed with low
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MIL-STD-883.
03-Aug-04
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Untitled
Abstract: No abstract text available
Text: Dual P-channel MOSFET ELM34803AA-N •General description ■Features ELM34803AA-N uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-30V Id=-8A Rds(on) < 22mΩ (Vgs=-10V) Rds(on) < 34mΩ (Vgs=-4.5V)
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ELM34803AA-N
ELM34803AA-N
0E-02
0E-05
0E-01
0E-04
00E-01
00E-02
00E-03
Sep-21-2009
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srf* 4230
Abstract: No abstract text available
Text: SMT POWER INDUCTORS Shielded Drum Core - PG0040/41 Series Height: 2.0mm Max Footprint: 6.7mm x 4.5mm Max Current Rating: up to 1.2A Inductance Range: 0.7µH to 3500µH Electrical Specifications @ 25°C — Operating Temperature -40°C to +130°C Part 2,3 Number
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PG0040/41
PG0040
srf* 4230
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Untitled
Abstract: No abstract text available
Text: SMT POWER INDUCTORS Shielded Drum Core - PG0085/PG0086 Series Height: 1.8mm Max Footprint: 4.3mm x 4.3mm Max Current Rating: up to 1.5A Inductance Range: 0.7µH to 3500µH Electrical Specifications @ 25°C — Operating Temperature -40°C to +130°C 1 Part 7
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PG0085/PG0086
PG0085
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p1170.823
Abstract: No abstract text available
Text: SMT POWER INDUCTORS Shielded Drum Core - P1170/P1171 Series Height: 6.0mm Max Footprint: 12.2mm x 12.2mm Max Current Rating: up to 13A Inductance Range: .32µH to 750µH Electrical Specifications @ 25°C — Operating Temperature -40°C to +130°C Inductance
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P1170/P1171
P1170
P1171
p1170.823
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NCV7718 D
Abstract: No abstract text available
Text: NCV7718 Hex Half-Bridge Driver The NCV7718 is a Hex Half−Bridge Driver with protection features designed specifically for automotive and industrial motion control applications. The NCV7718 has independent controls and diagnostics. The device can be operated in forward, reverse, brake, and high
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NCV7718
NCV7718
NCV7718/D
NCV7718 D
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D103D
Abstract: D104D d106d D108D C101B Q102 R101 R105 R107 BF179
Text: AND8157/D ECLinPS MAX] SiGe SPICE Modeling Kit Prepared by: Casey Stys and Paul Shockman http://onsemi.com APPLICATION NOTE Objective Table 1. Schematics and Netlist Nomenclature The objective of this kit is to provide sufficient circuit schematic and SPICE parameter information to perform
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AND8157/D
D103D
D104D
d106d
D108D
C101B
Q102
R101
R105
R107
BF179
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Broadcom vdsl2
Abstract: scalable video coding mtbe network nightmare
Text: White Paper Delivering High-Quality Video in Your IPTV Deployment This white paper introduces Broadcom’s PhyR retransmission system. This innovation achieves the low residual BER required for the deployment of IPTV across the xDSL network, while also achieving higher rates and extended service reach at no extra cost. PhyR overcomes the limitations of the high bit error rates in the DSL standard, giving telecom service
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XDSL-WP101-R
Broadcom vdsl2
scalable video coding
mtbe
network nightmare
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EVR16
Abstract: LA74308LP
Text: Ordering number : ENA0898A LA74308LP Monolithic Linear IC Audio Interface for DSC Overview The LA74308LP is a SPEAKER AMP and MIC AMP built-in audio interface for DSC. It incorporates an 8/16kHz trap and supports CODECs with a sampling rate of 8kHz or 16kHz.
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ENA0898A
LA74308LP
LA74308LP
8/16kHz
16kHz.
16kHz)
A0898-16/16
EVR16
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NCV7708B
Abstract: 800E-02 18-SO NCV7708BDWR2G
Text: NCV7708B Double Hex Driver The NCV7708B is a fully protected Hex−Half Bridge−Driver designed specifically for automotive and industrial motion control applications. The six low and high side drivers are freely configurable and can be controlled separately. This allows for high side, low side,
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NCV7708B
NCV7708B
SOIC-28
NCV7708B/D
800E-02
18-SO
NCV7708BDWR2G
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DIMENSIONS soic 28
Abstract: 800E-02 NCV7708A NCV7708ADWG NCV7708ADWR2G transistor free VS113
Text: NCV7708A Double Hex Driver The NCV7708A is a fully protected Hex−Half Bridge−Driver designed specifically for automotive and industrial motion control applications. The six low and high side drivers are freely configurable and can be controlled separately. This allows for high side, low side,
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NCV7708A
NCV7708A
SOIC-28
NCV7708A/D
DIMENSIONS soic 28
800E-02
NCV7708ADWG
NCV7708ADWR2G
transistor free
VS113
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14E04
Abstract: MV 3581
Text: NCV8508B 5.0 V and 3.3 V, 250 mA LDO with Watchdog and RESET The NCV8508B is a precision micropower Low Dropout LDO voltage regulator. The part contains many of the required features for powering microprocessors. Its robustness makes it suitable for severe
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NCV8508B
NCV8508B/D
14E04
MV 3581
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D100D
Abstract: C1213A transistor k1213 k1011 k0305 K0116 k1112 K1012 K0115 k1113
Text: AND8077/D GigaCommt SiGe SPICE Modeling Kit Prepared by: Senad Lomigora and Paul Shockman http://onsemi.com APPLICATION NOTE Objective The objective of this kit is to provide sufficient circuit schematic and SPICE parameter information to perform system level interconnect modeling for devices in
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AND8077/D
D100D
C1213A
transistor k1213
k1011
k0305
K0116
k1112
K1012
K0115
k1113
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T4302
Abstract: No abstract text available
Text: NTD4302 Power MOSFET 68 Amps, 30 Volts N−Channel DPAK Features • • • • • • • Ultra Low RDS on Higher Efficiency Extending Battery Life Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified IDSS Specified at Elevated Temperature
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NTD4302
369AA
T4302
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pspice high frequency igbt
Abstract: DS4926
Text: MITEL ITS03F03 Medium Frequency Powerline N-Channel IGBT SEM ICON D UCTOR Supersedes April 1998, version DS4926 - 1.1 DS4926 - 2.2 February 1999 Key Parameters The ITS03F03 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for
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DS4926
ITS03F03
ITS03F03
pspice high frequency igbt
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pspice high frequency igbt
Abstract: DS4713-2 ITS23F06 ITS23F06P T0247
Text: M ITEL S E M IC O N D U C T O R ITS23F06 Medium Frequency Powerline N-Channel IGBT Supersedes March 1998, version DS4713-2.3 DS4713-3.2 March 1999 Key Parameters The ITS23F06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for
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ITS23F06
DS4713-2
DS4713-3
ITS23F06
T0247
pspice high frequency igbt
ITS23F06P
T0247
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T0252
Abstract: ITS06F03B ITS06F03G
Text: M ITEL S E M IC O N D U C T O R ITS06F03 Medium Frequency Powerline N-Channel IGBT Supersedes April 1998 version, DS4866-1.3 DS4866-2.1 February 1999 Key Parameters The ITS06F03 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for
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ITS06F03
DS4866-1
DS4866-2
ITS06F03
T0220
T0252
T0252
ITS06F03B
ITS06F03G
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