Untitled
Abstract: No abstract text available
Text: DATASHEET Radiation Hardened 30V 32-Channel Analog Multiplexer ISL71841SEH Features The ISL71841SEH is a radiation hardened, 32-Channel high ESD protected multiplexer that is fabricated using Intersil’s proprietary P6SOI Silicon On Insulator process technology to
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32-Channel
ISL71841SEH
ISL71841SEH
ISL71841SEHâ
FN8735
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Untitled
Abstract: No abstract text available
Text: TAOS Inc. is now ams AG The technical content of this TAOS datasheet is still valid. Contact information: Headquarters: ams AG Tobelbaderstrasse 30 8141 Unterpremstaetten, Austria Tel: +43 0 3136 500 0 e-Mail: ams_sales@ams.com Please visit our website at www.ams.com
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TSL2672
TAOS133
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Untitled
Abstract: No abstract text available
Text: DATASHEET Radiation Hardened 30V 16-Channel Analog Multiplexer ISL71840SEH Features The ISL71840SEH is a radiation hardened, 16-Channel high ESD protected multiplexer that is fabricated using Intersil’s proprietary P6SOI Silicon On Insulator process technology to
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16-Channel
ISL71840SEH
ISL71840SEH
ISL71840SEHâ
038mm)
FN8734
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Untitled
Abstract: No abstract text available
Text: 2N5153HR Hi-Rel PNP bipolar transistor 80 V - 5 A Datasheet - production data Features 2 BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range -65°C to +200°C 3 1 TO-257 TO-39 2 3 1 • Hi-Rel PNP bipolar transistor • Linear gain characteristics
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2N5153HR
O-257
2N5153HR
O-257
DocID15386
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Untitled
Abstract: No abstract text available
Text: 2N5153HR Hi-Rel PNP bipolar transistor 80 V - 5 A Datasheet - production data Features 2 BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range -65°C to +200°C 3 1 TO-257 TO-39 2 3 1 • Hi-Rel PNP bipolar transistor • Linear gain characteristics
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2N5153HR
O-257
2N5153HR
O-257
DocID15386
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Untitled
Abstract: No abstract text available
Text: TAOS Inc. is now ams AG The technical content of this TAOS datasheet is still valid. Contact information: Headquarters: ams AG Tobelbaderstrasse 30 8141 Unterpremstaetten, Austria Tel: +43 0 3136 500 0 e-Mail: ams_sales@ams.com Please visit our website at www.ams.com
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TSL2772
TAOS131
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Untitled
Abstract: No abstract text available
Text: TAOS Inc. is now ams AG The technical content of this TAOS datasheet is still valid. Contact information: Headquarters: ams AG Tobelbaderstrasse 30 8141 Unterpremstaetten, Austria Tel: +43 0 3136 500 0 e-Mail: ams_sales@ams.com Please visit our website at www.ams.com
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TCS3772
TAOS145B
65-mA
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Untitled
Abstract: No abstract text available
Text: TAOS Inc. is now ams AG The technical content of this TAOS datasheet is still valid. Contact information: Headquarters: ams AG Tobelbaderstrasse 30 8141 Unterpremstaetten, Austria Tel: +43 0 3136 500 0 e-Mail: ams_sales@ams.com Please visit our website at www.ams.com
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TMD2672
TAOS149C
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Untitled
Abstract: No abstract text available
Text: TAOS Inc. is now ams AG The technical content of this TAOS datasheet is still valid. Contact information: Headquarters: ams AG Tobelbaderstrasse 30 8141 Unterpremstaetten, Austria Tel: +43 0 3136 500 0 e-Mail: ams_sales@ams.com Please visit our website at www.ams.com
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TMD2671
TAOS144B
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Untitled
Abstract: No abstract text available
Text: TAOS Inc. is now ams AG The technical content of this TAOS datasheet is still valid. Contact information: Headquarters: ams AG Tobelbaderstrasse 30 8141 Unterpremstaetten, Austria Tel: +43 0 3136 500 0 e-Mail: ams_sales@ams.com Please visit our website at www.ams.com
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TMD2772
TAOS147E
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520301006R
Abstract: 2N5154RESYHRG
Text: 2N5154HR Hi-Rel NPN bipolar transistor 80 V - 5 A Datasheet - production data Features 2 TO-39 BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range - 65 °C to + 200 °C 3 1 TO-257 2 1 3 • Hi-Rel NPN bipolar transistor • Linear gain characteristics
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2N5154HR
O-257
2N5154HR
O-257
DocID15387
520301006R
2N5154RESYHRG
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5962R11212
Abstract: No abstract text available
Text: DATASHEET 3A, Radiation Hardened, Positive, Ultra Low Dropout Regulator ISL75051SEH Features The ISL75051SEH is a radiation hardened low-voltage, high-current, single-output LDO specified for up to 3.0A of continuous output current. These devices operate over an input
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ISL75051SEH
ISL75051SEH
225mV
038mm)
FN8294
5962R11212
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st smd IC marking code
Abstract: 2N5154ESYHRT
Text: 2N5154HR Hi-Rel NPN bipolar transistor 80 V - 5 A Datasheet - production data Features 2 TO-39 BVCEO 80 V IC max 5A HFE at 10 V - 150 mA > 70 Operating temperature range - 65 °C to + 200 °C 3 1 TO-257 2 3 1 • Hi-Rel NPN bipolar transistor • Linear gain characteristics
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2N5154HR
O-257
2N5154HR
O-257
DocID15387
st smd IC marking code
2N5154ESYHRT
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Untitled
Abstract: No abstract text available
Text: 2N5401HR Hi-Rel PNP bipolar transistor 150 V, 0.5 A Datasheet - production data Features 3 1 BVCEO 150 V IC max 0.5 A HFE at 10 V - 150 mA > 60 1 2 2 3 TO-18 LCC-3 3 • Hermetic packages • ESCC and JANS qualified 4 1 • Up to 100 krad(Si) low dose rate
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2N5401HR
2N5401HR
MIL-PRF19500
DocID16934
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TSL26717
Abstract: No abstract text available
Text: TAOS Inc. is now ams AG The technical content of this TAOS datasheet is still valid. Contact information: Headquarters: ams AG Tobelbaderstrasse 30 8141 Unterpremstaetten, Austria Tel: +43 0 3136 500 0 e-Mail: ams_sales@ams.com Please visit our website at www.ams.com
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TSL2671
TAOS118
TSL26717
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Untitled
Abstract: No abstract text available
Text: TAOS Inc. is now ams AG The technical content of this TAOS datasheet is still valid. Contact information: Headquarters: ams AG Tobelbaderstrasse 30 8141 Unterpremstaetten, Austria Tel: +43 0 3136 500 0 e-Mail: ams_sales@ams.com Please visit our website at www.ams.com
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TMD2771
TAOS143B
100-mm
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marking code RAD SMD Transistor npn
Abstract: JS55
Text: 2N5551HR Hi-Rel NPN bipolar transistor 160 V, 0.5 A Datasheet - production data Features 3 1 BVCEO 160 V IC max 0.5 A HFE at 5 V - 10 mA > 80 1 2 2 3 TO-18 LCC-3 3 • Hermetic packages • ESCC and JANS qualified 4 1 • Up to 100 krad(Si) low dose rate
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2N5551HR
2N5551HR
MIL-PRF19500
DocID16935
marking code RAD SMD Transistor npn
JS55
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ldr 10k
Abstract: LDR 24v LDR 20K ldr 100k ldr datasheet ldr resistor 1SS250 CF8140A SM8140A SM8140AM
Text: DISCONTINUED PRODUCT SM8140A EL Driver IC NIPPON PRECISION CIRCUITS INC. OVERVIEW PIN OUT The SM8140A is designed for using as EL Electronic Luminescence sheet driver require very low external parts counts, this result that very compact and thin EL driver units can be made.
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SM8140A
SM8140A
14pin
NC9612CE
ldr 10k
LDR 24v
LDR 20K
ldr 100k
ldr datasheet
ldr resistor
1SS250
CF8140A
SM8140AM
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Abstract: No abstract text available
Text: TAOS Inc. is now ams AG The technical content of this TAOS datasheet is still valid. Contact information: Headquarters: ams AG Tobelbaderstrasse 30 8141 Unterpremstaetten, Austria Tel: +43 0 3136 500 0 e-Mail: ams_sales@ams.com Please visit our website at www.ams.com
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TSL2771
TAOS100B
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Untitled
Abstract: No abstract text available
Text: TAOS Inc. is now ams AG The technical content of this TAOS datasheet is still valid. Contact information: Headquarters: ams AG Tobelbaderstrasse 30 8141 Unterpremstaetten, Austria Tel: +43 0 3136 500 0 e-Mail: ams_sales@ams.com Please visit our website at www.ams.com
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TCS3771
TAOS110A
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Untitled
Abstract: No abstract text available
Text: 2N3700HR Hi-Rel 80 V, 1 A NPN transistor Datasheet - production data Features BVCEO 80 V IC max 1A HFE at 10 V - 150 mA >100 1 2 3 3 3 TO-18 4 1 1 2 2 LCC-3 UB Pin 4 in UB is connected to the metallic lid Figure 1. Internal schematic diagram • Hermetic packages
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2N3700HR
2N3700HR
MILPRF19500)
DocID15354
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ldr 3 pin metal package
Abstract: sensitivity of ldr LDR SPECIFICATION LDR resistor LDR Datasheet TM1019 LDR positive NSC LDR JMX046X24 5662-0050101QXA
Text: This material is posted here with permission of the IEEE. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org.
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LM136-2
cobalt-60
ldr 3 pin metal package
sensitivity of ldr
LDR SPECIFICATION
LDR resistor
LDR Datasheet
TM1019
LDR positive
NSC LDR
JMX046X24
5662-0050101QXA
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SOC2222AHR
Abstract: No abstract text available
Text: 2N2222AHR Hi-Rel 40 V, 0.8 A NPN transistor Datasheet - production data Features Parameter ESCC JANS BVCEO min 40 V 50 V 1 2 3 IC max 0.8 A hFE at 10 V - 150 mA 100 TO-18 3 3 4 1 1 2 • Hermetic packages 2 LCC-3 UB • ESCC and JANS qualified Pin 4 in UB is connected to the metallic lid.
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2N2222AHR
2N2222AHR
MIL-PRF19500
DocID16558
SOC2222AHR
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specification of ldr
Abstract: LDR SPECIFICATION sensitivity of ldr 5962R9166702VYA ETS500 texas ldr LM2941WGRLQMLV LDR internal diagram ldr resistor TM1019
Text: This material is posted here with permission of the IEEE. Internal or personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution must be obtained from the IEEE by writing to pubs-permissions@ieee.org.
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LM2941
Ph/std883
mil/Downloads/MilSpec/Smd/00501
specification of ldr
LDR SPECIFICATION
sensitivity of ldr
5962R9166702VYA
ETS500
texas ldr
LM2941WGRLQMLV
LDR internal diagram
ldr resistor
TM1019
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