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    2 PIN IR DIODE Search Results

    2 PIN IR DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    2 PIN IR DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: RB500V-40 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE Low Current Rectification Applications PINNING Features DESCRIPTION PIN • Small surface mounting type • Low IR IR=70nA Typ. • High reliability 1 Cathode 2 Anode 2 1 S9 Top View Marking Code: "S9"


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    PDF RB500V-40 OD-323 OD-323

    RB500V-40

    Abstract: No abstract text available
    Text: RB500V-40 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE Low Current Rectification Applications PINNING Features DESCRIPTION PIN • Small surface mounting type • Low IR IR=70nA Typ. • High reliability 1 Cathode 2 Anode 2 1 S9 Top View Marking Code: "S9"


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    PDF RB500V-40 OD-323 OD-323 RB500V-40

    RB500V-40

    Abstract: IR-70
    Text: RB500V-40 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE Low Current Rectification Applications PINNING Features DESCRIPTION PIN • Small surface mounting type • Low IR IR=70nA Typ. • High reliability 1 Cathode 2 Anode 2 1 S9 Top View Marking Code: "S9"


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    PDF RB500V-40 OD-323 OD-323 RB500V-40 IR-70

    byv16-200t

    Abstract: common anode diode TO-220 mur1660 datasheet "Power Diode" BB204 BAY84 MUR1660 dpak DIODE ANODE COMMON MUR304OPT 2965C
    Text: DISCRETE SEMICONDUCTOR Diode Arrays •Switching Diode Arrays Part Pin to Pin Compatibility Vr max, V If max, mA Vf, V Trr, ns Ir, µA Number of elements 100 0.1 2 5.0 2 КД629АС9 BAY84 90 200 1.0 КД704АС9 BAV70 70 100 1.3 6.0 Circuit Two serial connected


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    PDF BAY84 BAV70 OT-23 BYV16-200T O-220AC O-220 byv16-200t common anode diode TO-220 mur1660 datasheet "Power Diode" BB204 BAY84 MUR1660 dpak DIODE ANODE COMMON MUR304OPT 2965C

    DIODE 5C

    Abstract: FMMD7000 partmarking 5 C TRR15 DSA003690
    Text: SOT23 SILICON PLANAR HIGH SPEED SWITCHING DIODE PAIR SERIES FMMD7000 FMMD7000 ISSUE 2 - OCTOBER 1995 DIODE PIN CONNECTION PARTMARKING DETAIL – 5C 2 1 3 3 1 2 SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Breakdown Voltage Voltage (IR=100µ A)


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    PDF FMMD7000 100mA DIODE 5C FMMD7000 partmarking 5 C TRR15 DSA003690

    marking M5N

    Abstract: MA3XD15 M5-N
    Text: Diodes SMD Type Schottky Barrier Diodes MA3XD15 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Mini type 3-pin package Low VF or Low IR type: VF < 0.45 V, IR < 100 0.55 Features +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 A +0.05 0.1-0.01 0-0.1


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    PDF MA3XD15 OT-23 marking M5N MA3XD15 M5-N

    FMMD6050

    Abstract: FMMD7000 partmarking 5 C DSA003690
    Text: SOT23 SILICON PLANAR HIGH SPEED SWITCHING DIODE FMMD6050 ISSUE 2 - OCTOBER 1995 DIODE PIN CONNECTION  PARTMARKING DETAIL – 5A 2 1 3 ! SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Breakdown Voltage Voltage IR=100µ A V(BR) 70 V Peak Forward Current


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    PDF FMMD6050 100mA FMMD7000 FMMD6050 partmarking 5 C DSA003690

    MARKING M5N

    Abstract: IR 2802
    Text: MA3XD15 Silicon epitaxial planar type For rectification For protection against reverse current Unit : mm 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2 1 0.95 (0.95) 1.9±0.1 (0.65) • Mini type 3-pin package • Low VF or Low IR type: VF < 0.45 V, IR < 100 µA


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    PDF MA3XD15 MARKING M5N IR 2802

    "MARKING CODE S9"

    Abstract: RB500V-40
    Text: RB500V-40 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE Features • Small surface mounting type • Low IR • High reliability PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 Applications • Low current rectification S9 Top View Marking Code: "S9" Simplified outline SOD-323 and symbol


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    PDF RB500V-40 OD-323 OD-323 "MARKING CODE S9" RB500V-40

    "MARKING CODE S9"

    Abstract: RB500V-40
    Text: RB500V-40 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE Features • Small surface mounting type • Low IR • High reliability PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 Applications • Low current rectification S9 Top View Marking Code: "S9" Simplified outline SOD-323 and symbol


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    PDF RB500V-40 OD-323 OD-323 "MARKING CODE S9" RB500V-40

    CHELTON

    Abstract: microwave diode ratings DFN et_
    Text: Silicon PIN diode: DH85100-91S MAXIMUM RATINGS Operating temperature Tj : Storage temperature range: - 55°C, + 125°C - 55°C, + 150°C ELECTRICAL CHARACTERISTICS* @ TA = +25°C Test condition Parameter Breakdown Voltage (1-3) & (2-3) VBR IR = 10 µA Min


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    PDF DH85100-91S DH85100-91ST1 DH85100-9 DH85100-91ST3 CHELTON microwave diode ratings DFN et_

    marking 2S

    Abstract: No abstract text available
    Text: MA111 Schottky Barrier Diodes SBD MA10704 Silicon epitaxial planer type Unit : mm For high-frequency rectification 200mA rectification possible ● Low IR (reverse current) type. (About 1/10 of ordinary product) 0.3 ● IF(AV)= 0.5±0.1 type package (2-pin)


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    PDF MA111 MA10704 200mA 1000MHz N-50BU PG-10N SAS-8130 100mA marking 2S

    diode sv 03

    Abstract: 1SS388
    Text: 1SS388 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE High Speed Switching Application Features PINNING • • Low forward voltage: DESCRIPTION PIN VF 3 = 0.54V (typ.) 1 Cathode Low reverse voltage: IR=5µA (typ.) 2 Anode 2 1 SV Top View Marking Code: "SV" Simplified outline SOD-523 and symbol


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    PDF 1SS388 OD-523 OD-523 diode sv 03 1SS388

    diode sv 03

    Abstract: 1SS388
    Text: 1SS388 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE High Speed Switching Application Features PINNING • • Low forward voltage: DESCRIPTION PIN VF 3 = 0.54V (typ.) 1 Cathode Low reverse voltage: IR=5µA (typ.) 2 Anode 2 1 SV Top View Marking Code: "SV" Simplified outline SOD-523 and symbol


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    PDF 1SS388 OD-523 OD-523 diode sv 03 1SS388

    marking code SU

    Abstract: 1SS369
    Text: 1SS369 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE High Speed Switching Application Features PINNING • • Low forward voltage: DESCRIPTION PIN VF 3 = 0.54V (typ.) 1 Cathode Low reverse voltage: IR=5µA (MAX.) 2 Anode 2 1 SU Top View Marking Code: "SU" Simplified outline SOD-323 and symbol


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    PDF 1SS369 OD-323 OD-323 marking code SU 1SS369

    tsal

    Abstract: No abstract text available
    Text: TSOP15.TB1 Vishay Semiconductors IR Receiver Modules for Remote Control Systems Features 1 2 94 8692 3 es ig The TSOP15.TB1 - series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy


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    PDF TSOP15. D-74025 20-Dec-02 tsal

    Untitled

    Abstract: No abstract text available
    Text: IR M3401/3402/3405 SIEMENS INFRARED DATA TRANSCEIVER Prelim inary IR M 3401/3402 Pin Functions Pin no. Function Pin no. Function Pin no. Function 1 LED Anode 4 Receive 7 N/C 2 LED Cathode 5 SD/MS 8 GND 3 Transm it 6 VCC IRM3405 Pin Functions IRM3401 Pin no.


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    PDF M3401/3402/3405 IRM3405 IRM3401 IRM3405 A23b32b

    ir2c24n

    Abstract: No abstract text available
    Text: 6-Unit 320mA Transistor Array IR2C24/IR2C24N IR2C24/IR2C24N • Description ■ T h e IR 2 C 2 4 /IR 2 C 2 4 N is a 6 -c irc u it d river IC which can be used for driving printer, relays, L ED s and lamps. T he strobe pin enables all circuits to cut off without external transistors.


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    PDF 320mA IR2C24/IR2C24N 16-pin IR2C24) IR2C24N 120rnA ir2c24n

    Untitled

    Abstract: No abstract text available
    Text: SILICON EPITAXIAL PLANAR ABRUPT TUNER DIODE ISSUE 2 - SEPTEMBER 94_ DIODE PIN CONNECTION 2 ANODE CATHODE ILECTRICAL CHARACTERISTICS at Tamb=25°C SYMBOL PARAMETER MIN TYP MAX 30 UNIT Reverse Breakdown Voltage Vr Reverse Voltage Leakage Ir Case Capacitance


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    PDF ZC744 50MHz cH7Q57Ã 001G35S

    MA47200

    Abstract: No abstract text available
    Text: y if m r sr c M aann A M P cI o m p a n y •IV iU-r t* •. Stripline PIN Diode Switch Modules 'J n l a * - L ., MA47200 Series •-r-2-15 *-rî-v —Ü - - — 5 ^ f r ^ ir V 2.ro ir . Features P I • Broadband 5U d im Designs 'Iluough X Band • Circuit'Characterized


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    PDF MA47200

    IM258

    Abstract: 104M50V 2088 RGB-5
    Text: mk C ir c u it D e s c r ip t io n - .A Pin Descriptions pin Name MO CVBS/B O Pin# Description 2 Composite video with blanking and sync, or Blue. 4 Composite video with blanking and sync, or Green.


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    PDF Bt856/ 68-Pin Bt856/7 L856001 IM258 104M50V 2088 RGB-5

    Untitled

    Abstract: No abstract text available
    Text: C ir c u it D e s c r ip t io n Pin Descriptions This chapter begins with a table describing each pin and its function Table 1 , fol­ lowed by a pinout diagram (Figure 1) and a detailed functional block diagram (Figure 2). Table 1. Pin Descriptions (1 of 2)


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    PDF M60Hz Bt852

    Untitled

    Abstract: No abstract text available
    Text: 4 -U n it 400m A Transistor Array IR2C26 • IR 2C26 4-Unit 400mA Transistor Array Pin Connections Description The IR 2 C 2 6 is a 4 -circuit d rive r IC, which con­ sists of an input in verter and a current source type output section. The output section is composed of a


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    PDF IR2C26 400mA 100mA

    Untitled

    Abstract: No abstract text available
    Text: C ir c u it D e s c r ip t io n Pin Descriptions Pin names, input/output assignments, numbers, and descriptions are listed in Table 1. Figure 1 illustrates the Bt864A/865A pinout diagram, and Figure 2 details the block diagram. Table 1. Pin Assignm ents 1 o f 3


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    PDF Bt864A/865A L865A Bt864A/865A