laser DFB 1350nm
Abstract: 1350nm 1270nm DFB Laser Diode 1510nm
Text: 1.27um-1.61um MQW-DFB Laser Diodes for CWDM C-1XXXA-DFB-E-xxx-NT Absolute Maximum Rating Tc=25ºC Parameter Symbol Value Unit Po 8(CW) mW VRLD 2 V LD Forward Current IFLD 150 mA PD Reverse Voltage VRPD 15 V PD Forward Current IFPD 2.0 mA Operating Temperature
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27um-1
LUMNDS513-MAR1504
laser DFB 1350nm
1350nm
1270nm DFB Laser Diode
1510nm
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laser DFB 1350nm
Abstract: 1350nm
Text: 1.27um-1.61um MQW-DFB Laser Diodes for CWDM C-1XXXA-DFB-E-XX-NT Absolute Maximum Rating Tc=25ºC Parameter Symbol Value Unit Optical Output Power Po 8(CW) mW LD Reverse Voltage VRLD 2 V LD Forward Current IFLD 150 mA PD Reverse Voltage VRPD 15 V PD Forward Current
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27um-1
LUMNDS513-SEP2204
laser DFB 1350nm
1350nm
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GR-468-CORE
Abstract: No abstract text available
Text: P/N: C-1XXXA-DFB2.5-PX-SSCXI-03-XX CWDM Series 2.5G Laser Diode Module 18 channel Features l Un-cooled laser diode with MQW structure l High temperature operation without active cooling l Hermetically sealed active component l Built-in InGaAs monitor photodiode
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5-PX-SSCXI-03-XX
GR-468-CORE
DS-5293
GR-468-CORE
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upc 1270 H
Abstract: 1XXXA 1XXXX laser diode 1550 nm xxSxx
Text: Reference No: OM-D-SP-0001-V14 Date: 2003/8/21 Specifications Product Part Name: Product (Part) No: 2.5G CWDM Series Laser Diode Module (18 channel) C-1XXX-DFB2.5-T/R/PX-SXXXI/XXX-X ; C-1XXXA-DFB2.5-T/R/PX-SXXXI/XXX-X Revision record Version Issue date Description of change
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OM-D-SP-0001-V14
upc 1270 H
1XXXA
1XXXX
laser diode 1550 nm
xxSxx
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Untitled
Abstract: No abstract text available
Text: HIGH-SPEED 3.3V 64K x 8 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM PRELIMINARY IDT70V9089S/L In te g ra te d D e v iz e T e c h n o lo g y , l i e . FEATURES: • • • • • • • True Dual-Ported m em ory cells w hich allow sim ulta neous access of the sam e m em ory location
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IDT70V9089S/L
12/15ns
IDT70V9089S
IDT70V9089L
100-pin
170V9089
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY IDT70V908S/L HIGH-SPEED 3.3V 64K x 8 SYNCHRONOUS DUAL-PORT STATIC RAM Bvsp \dt integrated Device Technology, Inc. FEATURES: • • True Dual-Ported memory cells which allow simulta neous access of the same memory location • High-speed clock to data access
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IDT70V908S/L
25/30ns
IDT70V908S
365mW
IDT70V908L
660nW
IDT70V908S/L
100-pin
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Untitled
Abstract: No abstract text available
Text: HIGH-SPEED 16K x 16 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM PRELIMINARY IDT709269S/L Integrated Device Technology, Inc. FEATURES: • • • • • • True Dual-Ported memory cells which allow simulta neous access of the same memory location High-speed clock to data access
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IDT709269S/L
9/12/15ns
IDT709269S
IDT709269L
IDT709269S/L
100-pin
PN100-1)
16-Bit)
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A0L-A12L
Abstract: A12L CY7C09349A CY7C09349A-12AC CY7C09349A-6AC CY7C09349A-7AC CY7C09349A-9AC CY7C09359A CY7C09359A-6AC IND5
Text: - - = CYPHhbo CY7C09349A PRELI MI NARY_ CY7C09359A = 4K/8K x 18 Synchronous Dual-Port Static RAM High-speed clock to data access 6.5l1V7.5/9/12 ns max. Low operating power Features • True dual-ported m em ory cells which allow sim ulta neous access of the same m em ory location
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CY7C09349A
CY7C09359A
CY7C09349A)
CY7C09359A)
100-MHz
35-micron
A0L-A12L
A12L
CY7C09349A
CY7C09349A-12AC
CY7C09349A-6AC
CY7C09349A-7AC
CY7C09349A-9AC
CY7C09359A
CY7C09359A-6AC
IND5
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Untitled
Abstract: No abstract text available
Text: HIGH-SPEED 32K x 16 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM PRELIMINARY IDT709279S/L I n t e g r a te d D e v iz e T e c h n o lo g y , l i e . FEATURES: Full synchronous operation on both ports - 4ns setup to clock and 1 ns hold on all control, data, and address inputs
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IDT709279S/L
16-Bit)
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Untitled
Abstract: No abstract text available
Text: HIGH-SPEED 3.3V 1 6 K x 1 6 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM PRELIMINARY IDT70V9269S/L In te g ra te d D e v iz e T e c h n o lo g y , l i e . FEATURES: • • True Dual-Ported m em ory cells which allow sim ulta neous access of the sam e m em ory location
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IDT70V9269S/L
12/15ns
IDT70V9269S
T70V9269L
128-pin
PK128-1)
16-Bit)
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Untitled
Abstract: No abstract text available
Text: HIGH-SPEED 16Kx 16 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM PRELIMINARY IDT709269S/L Integrated Device Technology, Inc. FEATURES: • • True Dual-Ported m em ory cells which allow sim ulta neous access of the sam e m em ory location • H igh-speed clock to data access
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IDT709269S/L
12/15ns
IDT709269S
IDT709269L
IDT709269
100-pin
PN100-1)
16-Bit)
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Untitled
Abstract: No abstract text available
Text: HIGH-SPEED 3.3V 32K x 8 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM PRELIMINARY IDT70V9079S/L In te g ra te d D e v iz e T e c h n o lo g y , l i e . FEATURES: • • True Dual-Ported m em ory cells which allow sim ulta neous access of the sam e m em ory location
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IDT70V9079S/L
12/15ns
IDT70V9079S
T70V9079L
100-pin
PN100-1)
70V9079
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Untitled
Abstract: No abstract text available
Text: HIGH-SPEED 3.3V 16K x 16 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM PRELIMINARY IDT70V9269S/L Features: * * a cce ss of the sam e memory location Full synchronous operation on both ports High-speed clock to data acce ss - - * additional logic True Dual-Ported memory cells which allow simultaneous
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IDT70V9269S/L
9/12/15ns
IDT70V9269S
MO-136,
2S771
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Untitled
Abstract: No abstract text available
Text: HIG H -SPE ED 32K x 16 S Y N C H R O N O U S PI PELINED D U A L - P O R T STATIC RAM PRELIMINARY IDT709279S/L FEATURES: • • • • • • • True Dual-Ported m em ory cells which allow sim ulta neous access ot the sam e m em ory location High-speed clock to data access
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IDT709279S/L
12/15ns
IDT709279S
T709279L
T709279
100-pin
PN100-1)
108-pin
G108-1)
16-Bit)
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Untitled
Abstract: No abstract text available
Text: HIGH-SPEED 64K x 8 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM PRELIMINARY IDT709089S/L I n t e g r a t e d D e v iz e T e c h n o lo g y , l i e . FEATURES: • • • • • • True Dual-Ported m em ory cells w hich allow sim ulta neous access of the sam e m em ory location
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IDT709089S/L
9/12/15ns
IDT709089S
IDT709089L
100-pin
84-pin
G84-3)
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Untitled
Abstract: No abstract text available
Text: HIGH-SPEED 3.3V 1 6 K x 1 6 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM PRELIMINARY IDT70V9269S/L FEATURES: • True Dual-Ported m em ory cells which allow sim ulta neous access of the sam e m em ory location • H igh-speed clock to data access — Com m ercial: 9/12/15ns max.
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IDT70V9269S/L
9/12/15ns
IDT70V9269S
IDT70V9269L
128-pin
PK128-1)
70V9269
16-Bit)
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A12L
Abstract: CY7C09349AV CY7C09359AV hcn 73 1016l 75l1 75L12
Text: CYPRESS CY7C09349AV CY7C09359AV PRELIMINARY 3.3V 4K/8K x 18 Synchronous Dual-Port Static RAM • High-speed clock to data access 7.5l1’ 2V9/12 ns max. • 3.3V Low operating power Features • True dual-ported m em ory cells which allow sim ulta neous access of the same m em ory location
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CY7C09349AV
CY7C09359AV
CY7C09349AV)
CY7C09359AV)
83-MHz
35-micron
2V9/12
A12L
CY7C09349AV
CY7C09359AV
hcn 73
1016l
75l1
75L12
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Untitled
Abstract: No abstract text available
Text: HIGH-SPEED 3.3V 3 2 K x 1 6 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM PRELIMINARY IDT70V9279S/L I n te g r a t e d D e v iz e T e c h n o lo g y , l i e . FEATURES: Full synchronous operation on both ports - 4ns setup to clock and 1 ns hold on all control, data,
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IDT70V9279S/L
128-pin
PK128-1
70V9279
16-Bit)
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bU1011
Abstract: 026R ca2dc CY7C09569V
Text: CY7C09569V CY7C09579V PREUM INAm 3.3V 16K/32K x 36 FLEx36 Synchronous Dual-Port Static RAM 3.3V Low operating power Features • True Dual-Ported mem ory cells which allow sim ulta neous access of the same mem ory location • 2 Flow-Through/Pipelined devices
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CY7C09569V
CY7C09579V
16K/32K
FLEx36TM
CY7C09569V)
CY7C09579V)
25-micron
100-MHz
bU1011
026R
ca2dc
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PLCC44
Abstract: 80251G
Text: Tem ic Semiconductor s Extended 8-Bit Microcontrollers C251 Family Part Number j Function / Application Key Features Package Extended 8-bit Microcontrollers TSC80251A1 Extended 8-bit microcontroller with analog interfa ces PMU. EW C, 8 24 Kb OTP/ROM , 1 Kb RAM . 2 x 16-bit timers,
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TSC80251A1
TSC80251G1
16-bit
PLC44.
TQFP44
PLC44,
TQFP44
TSC802S1A1
0251A
PLCC44
80251G
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Untitled
Abstract: No abstract text available
Text: HIGH-SPEED 32K x 8 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM PRELIMINARY IDT709079S/L In te g ra te d D e v iz e T e c h n o lo g y , l i e . FEATURES: • • True Dual-Ported m em ory cells which allow sim ulta neous access of the sam e m em ory location
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IDT709079S/L
9/12/15ns
IDT709079S
IDT709079L
100-pin
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CY7C09569V
Abstract: CY7C09579V
Text: # CYPRESS CY7C09569V PRELIMINARY _ CY7C09579V 3.3V 16K/32K x 36 FLEx36 Synchronous Dual-Port Static RAM 3.3V Low operating power Features • True dual-ported m em ory cells which allow sim ulta neous access of the same m em ory location • Two Flow-Through/Pipelined devices
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CY7C09569V
CY7C09579V
16K/32K
FLEx36â
CY7C09569V)
CY7C09579V)
25-micron
CY7C09569V
CY7C09579V
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CY7C09569V
Abstract: No abstract text available
Text: ! ^ '•ttttttttWÄÄÄÄÄÄÄÄÄÄÄÄÄÄÄW1- J M N K ♦ < ij / CY7C09569V CY7C09579V PRELIMINARY 5; 3.3V 16K/32K x 36 FLEx36 Synchronous Dual-Port Static RAM 3.3 V Low o p e ratin g p ow er Features — A c tiv e = 165 m A typ ical • True D u al-P o rted m e m o ry cells w h ich allo w s im u lta
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CY7C09569V
CY7C09579V
16K/32K
FLEx36â
CY7C09569V
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Untitled
Abstract: No abstract text available
Text: r- = CYPHhbo CY7C09349 PRELIMINARY_ CY7C09359 = 4K/8K x 18 Synchronous Dual-Port Static RAM High-speed clock to data access 6.5l1V7.5/9/12 ns max. Low operating power Features • True dual-ported m em ory cells which allow sim ulta neous access of the same m em ory location
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CY7C09349
CY7C09359
CY7C09349)
CY7C09359)
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