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    Toshiba America Electronic Components 1SV278BTH3FT

    SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE Variable Capacitance Diode, 30V, Silicon
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    1SV278 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1SV278 Toshiba variable capacitance diode Original PDF
    1SV278 Toshiba DIODE VAR CAP SINGLE 35V 14.16PF 2(1-1G1A) Scan PDF
    1SV278 Toshiba VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE Scan PDF
    1SV278 Toshiba Variable capacitance silicon diode for TV tuning Scan PDF
    1SV278B Toshiba TV Tuning Original PDF
    1SV278B Toshiba TV Tuning Original PDF
    1SV278B(TH3,F,T) Toshiba 1SV278 - DIODE VAR TV TUNER 30V 1-1G1A Original PDF
    1SV278B(TPH2,F) Toshiba 1SV278 - Diode VAR Cap Single 30V 14.16pF 2-Pin ESC T/R Original PDF
    1SV278BTPH3F Toshiba 1SV278 - Diode VAR Cap Single 30V 14.16pF 2-Pin ESC T/R Original PDF
    1SV278TH3FT Toshiba 1SV278 - Varactor Diodes VARICAP DIODE Original PDF
    1SV278TH3T Toshiba 1SV278 - Diode VAR Cap Single 30V 14.16pF 2-Pin ESC Original PDF
    1SV278TPH2 Toshiba 1SV278 - Diode VAR Cap Single 30V 14.16pF 2-Pin ESC T/R Original PDF
    1SV278(TPH2) Toshiba DIODE VAR CAP SINGLE 35V 14.16PF 2(1-1G1A) Scan PDF
    1SV278TPH3 Toshiba 1SV278 - Diode VAR Cap Single 30V 14.16pF 2-Pin ESC T/R Original PDF
    1SV278(TPH3) Toshiba DIODE VAR CAP SINGLE 35V 14.16PF 2(1-1G1A) Scan PDF
    1SV278TPH3F Toshiba 1SV278 - Diode VAR Cap Single 30V 14.16pF 2-Pin ESC T/R Original PDF

    1SV278 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 1SV278B TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV278B TV Tuning Unit: mm • High capacitance ratio: C2 V/C25 V = 6.5 typ. • Low series resistance: rs = 0.4 Ω (typ.) • Excellent C-V characteristics, and small tracking error.


    Original
    PDF 1SV278B

    1SV278

    Abstract: No abstract text available
    Text: 1SV278 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV278 TV Tuning • Unit: mm High capacitance ratio: C2 V/C25 V = 6.5 typ. · Low series resistance: rs = 0.4 Ω (typ.) · Excellent C-V characteristics, and small tracking error. ·


    Original
    PDF 1SV278 1SV278

    1SV278B

    Abstract: No abstract text available
    Text: 1SV278B TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV278B TV Tuning Unit: mm • High capacitance ratio: C2 V/C25 V = 6.5 typ. • Low series resistance: rs = 0.4 Ω (typ.) • Excellent C-V characteristics, and small tracking error.


    Original
    PDF 1SV278B 1SV278B

    Untitled

    Abstract: No abstract text available
    Text: 1SV278 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV278 TV Tuning • Unit: mm High capacitance ratio: C2 V/C25 V = 6.5 typ. · Low series resistance: rs = 0.4 Ω (typ.) · Excellent C-V characteristics, and small tracking error. ·


    Original
    PDF 1SV278

    1SV278

    Abstract: No abstract text available
    Text: 1SV278 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV278 TV Tuning Unit: mm • High capacitance ratio: C2 V/C25 V = 6.5 typ. • Low series resistance: rs = 0.4 Ω (typ.) • Excellent C-V characteristics, and small tracking error.


    Original
    PDF 1SV278 1SV278

    1SV278

    Abstract: No abstract text available
    Text: 1SV278 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV278 TV Tuning • Unit: mm High capacitance ratio: C2 V/C25 V = 6.5 typ. • Low series resistance: rs = 0.4 Ω (typ.) • Excellent C-V characteristics, and small tracking error.


    Original
    PDF 1SV278 1SV278

    1SV278B

    Abstract: C25V
    Text: 1SV278B 東芝可変容量ダイオード シリコンエピタキシャルプレーナ形 1SV278B TV VHF UHFチューナ電子同調用 • 単位: mm 容量変化比が大きい。 : C2V/C25V = 6.5 標準 : rs = 0.4 Ω (標準) • 直列抵抗が小さい。


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    PDF 1SV278B C2V/C25V 0014g 1SV278B C25V

    1SV278B

    Abstract: No abstract text available
    Text: 1SV278B TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV278B TV Tuning Unit: mm • High capacitance ratio: C2 V/C25 V = 6.5 typ. • Low series resistance: rs = 0.4 Ω (typ.) • Excellent C-V characteristics, and small tracking error.


    Original
    PDF 1SV278B 1SV278B

    Untitled

    Abstract: No abstract text available
    Text: 1SV278 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV278 TV Tuning Unit: mm • High capacitance ratio: C2 V/C25 V = 6.5 typ. • Low series resistance: rs = 0.4 Ω (typ.) • Excellent C-V characteristics, and small tracking error.


    Original
    PDF 1SV278

    SCJ0004N

    Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
    Text: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード


    Original
    PDF SCJ0004N TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 SCJ0004N JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT

    MRF581

    Abstract: 2SK163 BFG480W NB b6 smd transistor 2SK508 SMD transistor n36 bf998 TEF6860HL 3SK290 baw 92
    Text: RF᠟‫ݠ‬㄀8⠜ RF RFׂ೗‫ڦ‬ᆌᆩࢅยऺ๮֩ 2006౎6ሆ ݀քන೺ǖ2006౎6ሆ ࿔ॲຩႾࡽǖ9397 750 15589 Henk RoelofsLjޭጺ֋&ጺঢ়૙RFׂ೗ ०঻ ௅ᅃӲԨ࿢்‫ࣷۼ‬ၠጲम༵‫؜‬཈቟ᅜ߀฀࿢்‫ڦ‬RF๮֩ă‫ڼ‬8Ӳᄺփ૩ྔă࿢்ᅙཁेକ߸‫ܠ‬एᇀ


    Original
    PDF

    Motorola transistor smd marking codes

    Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
    Text: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.


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    PDF

    Variable Capacitance Diodes

    Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
    Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A


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    PDF TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG02 CRG01 CRG04 CMG06 Variable Capacitance Diodes 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24

    Toshiba TMPA8873

    Abstract: TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853
    Text: 2007-5 SYSTEM CATALOG TV Solutions Guide Digital and Analog Flat TV Organizations Contents ● ICs for Tuners…………………………………4-5 Digital Broadcasting Digital Broadcast Signal Processing DRAM ● PIF/SIF Systems…………………………………6


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    PDF SCE0001C S-167 SCE0001D Toshiba TMPA8873 TA1343NG TMPA8891 TMPA8893 tmpa8873 tmpa8859 TC90A96BFG TB1318FG TMPA8857 TMPA8853

    marking code 62z

    Abstract: philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent
    Text: 2001.05 Summary Application Example ANT The HVD141/142 features very small capacitance and on- resistance. These superior characteristics can provide isolation for the transmitting and receiving antenna switch sections and improve the insertion loss. TX RX


    Original
    PDF HVD141/142 HZU16 HZU10 HZU18 HZU11 HZU20 HZU12 HZU22 HZU13 HZU24 marking code 62z philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


    Original
    PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587

    uaf4000

    Abstract: toshiba smd marking code transistor smd code marking wl sot23 RF LNB C band chipset M74 marking BFG480W SMD transistor n36 vHF amplifier module 2450Mhz TOSHIBA DIODE CATALOG DIODE RF DETECTOR
    Text: RFマニュアル第9版 RF製品用のアプリケーションおよび設計マニュアル 2006年11月 date of release: November 2006 document order number: 9397 750 15817 Henk RoelofsRF製品担当副社長兼ゼネラル・マネージャー はじめに


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    PDF 20GHz uaf4000 toshiba smd marking code transistor smd code marking wl sot23 RF LNB C band chipset M74 marking BFG480W SMD transistor n36 vHF amplifier module 2450Mhz TOSHIBA DIODE CATALOG DIODE RF DETECTOR

    TA4029CTC

    Abstract: TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X
    Text: 製品カタログ 2011-1 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 アプリケーション別推奨製品 .3~8


    Original
    PDF BCJ0003G BCJ0003F TA4029CTC TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X

    tcxo philips 4322

    Abstract: philips tcxo 4322 190 ISO9001-Certified philips bfq32 philips bare die datasheet 2SK170BL ON4749 philips BFG196 S8740230 toshiba fet databook 2sk162 hitachi
    Text: RF Manual 5th edition Product and design manual for RF Products October 2004 Semiconductors RF Manual Philips Semiconductors 5th edition Product and design manual for RF Products  Koninklijke Philips Electronics N.V. 2004 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The


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    PDF

    1SV278

    Abstract: No abstract text available
    Text: TOSHIBA 1SV278 1 SV2 7 8 TOSHIBA VARIABLE CAPACITANCE DIODE TV TUNING SILICON EPITAXIAL PLANAR TYPE Unit in mm • High Capacitance Ratio : C2V / C25V = 6.5 TYP. • Low Series Resistance : rs = 0.40 (TYP.) • Excellent C-V Characteristics, and Small Tracking Error.


    OCR Scan
    PDF 1SV278 0014g 1SV278

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 1SV278 T O S H IB A V A R IA B L E C A PAC ITAN C E D IODE SILICON EPIT A X IA L PLA N A R T Y PE 1SV 278 Unit in mm TV TU N IN G • High Capacitance Ratio : C2V ! C-25V= 6-5 TYP. • Low Series Resistance : rs = 0.4H (TYP.) • Excellent C-V Characteristics, and Small Tracking Error.


    OCR Scan
    PDF 1SV278 C-25V= 0014g

    1SV278

    Abstract: C25V
    Text: 1SV278 TO SH IBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 278 Unit in mm TV TUNING • High Capacitance Ratio : C2 V / C25 V = 6.5 TYP. • Low Series Resistance : rs = 0.40 (TYP.) • Excellent C-V Characteristics, and Small Tracking Error.


    OCR Scan
    PDF 1SV278 0014g 1SV278 C25V

    Untitled

    Abstract: No abstract text available
    Text: 1SV278 TOSHIBA TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SU578 Unit in mm TV TUNING • High Capacitance Ratio : C 2y / C 25V —^.5 TYP. • Low Series Resistance : r$ = 0.4il (TYP.) • Excellent C-V Characteristics, and Small Tracking Error.


    OCR Scan
    PDF 1SV278 1SU578 0014g

    1SV278

    Abstract: C25V
    Text: TOSHIBA 1SV278 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1SV 278 Unit in mm TV TUNING • High Capacitance Ratio : C2V / C25V = 6.5 TYP. • Low Series Resistance : rs = 0.40 (TYP.) • Excellent C-V Characteristics, and Small Tracking Error.


    OCR Scan
    PDF 1SV278 C2y/C25V 0014g 470MHz 1SV278 C25V