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    1SS416TS Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    1SS416TS Toshiba 1SS416 - DIODE 0.1 A, 35 V, SILICON, SIGNAL DIODE, FSC2, 1-1X1A, 2 PIN, Signal Diode Original PDF

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    1SS416TS

    Abstract: No abstract text available
    Text: 1SS416TS 東芝ダイオード シリコンエピタキシャルショットキバリア形 1SS416TS ○ 高速スイッチング用 単位: mm z 2 端子小型外囲器なので高密度実装に最適です。 z 順方向電圧が低い。 : VF = 0.24V 標準 @IF = 5mA


    Original     		PDF 1SS416TS 20mmx20mm, 1SS416TS

    Untitled

    Abstract: No abstract text available
    Text: 1SS416TS TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS416TS High Speed Switching Application Unit: mm z Small package z Low forward voltage: VF = 0.24V typ. @IF = 5mA 0.6±0.05 Reverse voltage VRM 35 V VR 30 V Maximum (peak) forward current IFM


    Original     		PDF 1SS416TS