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    1SS383 Price and Stock

    Toshiba America Electronic Components 1SS383(TE85L,F)

    DIODE ARR SCHOTT 40V 100MA USQ
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    DigiKey 1SS383(TE85L,F) Reel 30,000 3,000
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    1SS383(TE85L,F) Cut Tape 3,656 1
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    1SS383(TE85L,F) Digi-Reel 1
    • 1 $0.38
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    Mouser Electronics 1SS383(TE85L,F) 18,377
    • 1 $0.38
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    Rochester Electronics LLC 1SS383T1G

    DIODE ARR SCHOTT 40V 300MA SC82
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    DigiKey 1SS383T1G Bulk 9,615 2,664
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    onsemi 1SS383T1G

    DIODE ARR SCHOTT 40V 300MA SC82
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    Rochester Electronics 1SS383T1G 9,615 1
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    Toshiba America Electronic Components 1SS383 (TE85L,F)

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    Bristol Electronics 1SS383 (TE85L,F) 3,308
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    1SS383 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Type PDF
    1SS383 Kexin Low Voltage High Speed Switching Original PDF
    1SS383 Toshiba Japanese - Diodes Original PDF
    1SS383 Toshiba shottky barrier diode Original PDF
    1SS383 TY Semiconductor Low Voltage High Speed Switching - SOT-343 Original PDF
    1SS383 Toshiba DIODE LOW VOLTAGE HIGH SPEED SWITCHING Scan PDF
    1SS383 Toshiba DIODE Scan PDF
    1SS383T1 On Semiconductor DIODE SCHOTTKY DIODE 40V 0.3A 4SC-82 T/R Original PDF
    1SS383T1G On Semiconductor DUAL SCHOTTKY SC82 Original PDF
    1SS383T2G On Semiconductor DUAL SCHOTTKY SC82 Original PDF
    1SS383(TE85L,F) Toshiba 1SS383 - Diode Small Signal Schottky 45V 0.1A 4-Pin USQ T/R Original PDF

    1SS383 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Product specification 1SS383 SOT-343 Unit: mm Features Composed of 2 independent diodes. Low forward voltage: VF 3 = 0.54V (typ.) Low reverse current: IR = 5 A (max) Absolute M axim um R atings T a = 25 P aram eter S ym bol M axim um (peak) reverse voltage


    Original     		PDF 1SS383 OT-343

    BAT54M3T5G

    Abstract: 419C-02 MMVL3700T1
    Text: Schottky Diodes Device 1SS383T1 VR Volts CT @ V pF Max 25 40 IR @ V Volts VF Volts Max nA Max Volts 0.6 5000 40 Type Package Dual Independent SC−82AB Case 419C−02 BAT54CXV3T5 30 10 1.0 0.4 2000 25 Dual Common Cathode SC−89 Case 463C−03 RB751S40T1 40


    Original     		PDF 1SS383T1 SC-82AB 419C-02 BAT54CXV3T5 SC-89 463C-03 RB751S40T1 BAT54XV2T1 RB520S30T1 RB521S30T1 BAT54M3T5G 419C-02 MMVL3700T1

    Untitled

    Abstract: No abstract text available
    Text: 1SS383 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS383 Low Voltage High Speed Switching Unit: mm z Small package z Composed of 2 independent diodes. z Low forward voltage: VF 3 = 0.54V (typ.) z Low reverse current: IR = 5 A (max) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 1SS383

    SC-82

    Abstract: 1SS383T1G 1SS383T2G marking 900AA 900aa
    Text: 1SS383T1G, 1SS383T2G Preferred Device Dual Schottky Diode Dual 40 V, 300 mA Low VF Schottky Diodes in 4−lead SC−82 package. Features • Low Forward Voltage: VF = 0.48 V typ @ IF = 100 mA • Low Reverse Current: IR = 5 mA (max) • Pb−Free Package May be Available. The G−Suffix Denotes a


    Original     		PDF 1SS383T1G, 1SS383T2G SC-82 900AA 1SS383T1G/D SC-82 1SS383T1G 1SS383T2G marking 900AA 900aa

    BC237

    Abstract: BC847BPDW1T1 Series BC548 low noise transistors bc638 cbc550c BC307 2N5550* surface mount BC212 BSR58LT1 NSDEMN11XV6T1
    Text: Numeric Data Sheet Listing Data Sheet Function Page 1SS383T1 Dual Schottky Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 2N3819 JFET VHF/UHF Amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53


    Original     		PDF 1SS383T1 2N3819 2N3903, 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088, 2N5089 BC237 BC847BPDW1T1 Series BC548 low noise transistors bc638 cbc550c BC307 2N5550* surface mount BC212 BSR58LT1 NSDEMN11XV6T1

    1SS383

    Abstract: No abstract text available
    Text: 1SS383 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS383 Low Voltage High Speed Switching Unit: mm z Small package z Composed of 2 independent diodes. z Low forward voltage: VF 3 = 0.54V (typ.) z Low reverse current: IR = 5 A (max) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 1SS383 1SS383

    "MARKING DIAGRAM"

    Abstract: 1SS383T1
    Text: 1SS383T1 Preferred Device Dual Schottky Diode MAXIMUM RATINGS TA = 25°C Symbol Max Unit Continuous Reverse Voltage VR 40 V Maximum Peak Forward Current* IFM 300 mA IFM(surge) 500 mA 4 3 Symbol Max Unit 1 2 Symbol Max Unit PD 200 (Note 1) 1.6 (Note 1) mW


    Original     		PDF 1SS383T1 1SS383T1/D "MARKING DIAGRAM" 1SS383T1

    1SS383

    Abstract: No abstract text available
    Text: 1SS383 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS383 Low Voltage High Speed Switching Unit: mm l Small package l Composed of 2 independent diodes. l Low forward voltage: VF 3 = 0.54V (typ.) l Low reverse current: IR = 5µA (max) Maximum Ratings (Ta = 25°C)


    Original     		PDF 1SS383 1SS383

    diode code ae

    Abstract: brd8011 1SS383T1G
    Text: 1SS383T1G Preferred Device Dual Schottky Diode Dual 40 V, 300 mA Low VF Schottky Diodes in 4−lead SC−82 package. Features • Low Forward Voltage: VF = 0.48 V typ @ IF = 100 mA • Low Reverse Current: IR = 5 mA (max) • This is a Pb−Free Device*


    Original     		PDF 1SS383T1G SC-82 1SS383T1G/D diode code ae brd8011 1SS383T1G

    Untitled

    Abstract: No abstract text available
    Text: 1SS383 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS383 Low Voltage High Speed Switching Unit: mm Small package Composed of 2 independent diodes. Low forward voltage: VF 3 = 0.54V (typ.) Low reverse current: IR = 5µA (max) Maximum Ratings (Ta = 25°C)


    Original     		PDF 1SS383 10mfied 961001EAA2'

    1SS383

    Abstract: No abstract text available
    Text: 1SS383 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS383 Low Voltage High Speed Switching Unit: mm Small package Composed of 2 independent diodes. Low forward voltage: VF 3 = 0.54V (typ.) Low reverse current: IR = 5µA (max) Maximum Ratings (Ta = 25°C)


    Original     		PDF 1SS383 10mtransportation 1SS383

    1SS383

    Abstract: No abstract text available
    Text: 1SS383 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS383 Low Voltage High Speed Switching Unit: mm z Small package z Composed of 2 independent diodes. z Low forward voltage: VF 3 = 0.54V (typ.) z Low reverse current: IR = 5 A (max) Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 1SS383 1SS383

    smd A4

    Abstract: MARKING A4 f1 smd marking smd sot343 SM21 1SS383 smd marking a4 smd marking SOT343
    Text: Diodes SMD Type Low Voltage High Speed Switching 1SS383 SOT-343 Unit: mm Features Composed of 2 independent diodes. Low forward voltage: VF 3 = 0.54V (typ.) Low reverse current: IR = 5 A (max) Absolute M axim um R atings T a = 25 P aram eter S ym bol M axim um (peak) reverse voltage


    Original     		PDF 1SS383 OT-343 10orward smd A4 MARKING A4 f1 smd marking smd sot343 SM21 1SS383 smd marking a4 smd marking SOT343

    SC82

    Abstract: No abstract text available
    Text: 1SS383T1 Preferred Device Dual Schottky Diode MAXIMUM RATINGS TA = 25°C Symbol Max Unit Continuous Reverse Voltage VR 40 V Maximum Peak Forward Current* IFM 300 mA IFM(surge) 500 mA 4 3 Symbol Max Unit 1 2 Symbol Max Unit PD 200 (Note 1) 1.6 (Note 1) mW


    Original     		PDF 1SS383T1 SC-82 1SS383T1 SC-82 3000/Tape 1SS383T1/D SC82

    SCJ0004N

    Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
    Text: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード


    Original     		PDF SCJ0004N TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 SCJ0004N JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


    Original     		PDF BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983

    Variable Capacitance Diodes

    Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
    Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A


    Original     		PDF TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG02 CRG01 CRG04 CMG06 Variable Capacitance Diodes 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24

    DIODE marking S4 59A

    Abstract: DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323
    Text: 2008.07 Renesas Diodes Status List Topic_Ultra-Small Zener Diodes " RKZ-KP Series " - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3


    Original     		PDF REJ16G0002-2200 DIODE marking S4 59A DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323

    marking code 62z

    Abstract: philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent
    Text: 2001.05 Summary Application Example ANT The HVD141/142 features very small capacitance and on- resistance. These superior characteristics can provide isolation for the transmitting and receiving antenna switch sections and improve the insertion loss. TX RX


    Original     		PDF HVD141/142 HZU16 HZU10 HZU18 HZU11 HZU20 HZU12 HZU22 HZU13 HZU24 marking code 62z philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent

    SSM3J307T

    Abstract: SSM3J328R SSM3J334R
    Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g


    Original     		PDF 200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 1SS383 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS383 Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING 2.1 ± 0.1 • • • • j 1.25± O.lj Small Package Composed of 2 independent diodes. Low Forward Voltage : V p 3 = 0.54V(TYP.)


    OCR Scan     		PDF 1SS383 961001EAA2'

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 1SS383 TOSHIBA DIODE 1 SS383 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LOW VOLTAGE HIGH SPEED SWITCHING 2.1 ± 0.1 • • • • Small Package Composed of 2 independent diodes. Low Forward Voltage : Vp 3 = 0.54V (TYP.) Low Reverse Current ; I r = 5^A(MAX,)


    OCR Scan     		PDF 1SS383 SS383 961001EAA2'

    1SS383

    Abstract: No abstract text available
    Text: TOSHIBA 1SS383 TO SHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS383 Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING 2.1 ± 0.1 • • • • Small Package Composed of 2 independent diodes. Low Forward Voltage : Vjr 3 = 0.54V (TYP.) Low Reverse Current : Ir = 5,mA (MAX.)


    OCR Scan     		PDF 1SS383 961001EAA2' 1SS383

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 1SS383 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS383 Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING 2.1 ± 0.1 • • • • j 1.25± O.lj Small Package Composed of 2 independent diodes. Low Forward Voltage : V p 3 = 0.54V(TYP.)


    OCR Scan     		PDF 1SS383 961001EAA2'