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    Toshiba America Electronic Components 1SS377(TE85L,F)

    Diode Small Signal Schottky 15V 0.1A 3-Pin S-Mini T/R
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    Chip1Stop 1SS377(TE85L,F) Cut Tape 10,145
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    1SS377 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Type PDF
    1SS377 Kexin High Speed Switching Diode Original PDF
    1SS377 Toshiba Japanese - Diodes Original PDF
    1SS377 Toshiba shottky barrier diode Original PDF
    1SS377 TY Semiconductor High Speed Switching Diode - SOT-23 Original PDF
    1SS377 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1SS377 Toshiba DIODE (HIGH SPEED SWITCHING) Scan PDF
    1SS377 Toshiba DIODE Scan PDF

    1SS377 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1SS377

    Abstract: marking O9
    Text: Diodes SMD Type HIGH SPEED SWITCHING DOIDE 1SS377 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low forward voltage :VR =0.23V Typ . @IF = 5mA 0.55 Small package +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1


    Original     		PDF 1SS377 OT-23 Te200* 1SS377 marking O9

    Untitled

    Abstract: No abstract text available
    Text: 1SS377 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS377 High Speed Switching Unit in mm z Low forward voltage : VF = 0.23V typ. @IF = 5mA z Small package : SC-59 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V


    Original     		PDF 1SS377 SC-59 O-236MOD

    Untitled

    Abstract: No abstract text available
    Text: 1SS377 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS377 High Speed Switching Unit in mm Low forward voltage : VF = 0.23V typ. @IF = 5mA Small package : SC-59 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage


    Original     		PDF 1SS377 SC-59 O-236MOD

    1SS377

    Abstract: No abstract text available
    Text: 1SS377 東芝ダイオード シリコンエピタキシャルショットキバリア形 1SS377 ○ 高速スイッチング用 単位: mm z 小型外囲器なので高密度実装に最適です。 z 順方向電圧が低い。 : VF = 0.23V 標準 @IF = 5mA


    Original     		PDF 1SS377 236MOD 100mA 1SS377

    1SS377

    Abstract: No abstract text available
    Text: 1SS377 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS377 High Speed Switching Unit in mm z Low forward voltage : VF = 0.23V typ. @IF = 5mA z Small package : SC-59 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V


    Original     		PDF 1SS377 SC-59 O-236MOD 1SS377

    1SS377

    Abstract: No abstract text available
    Text: 1SS377 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS377 High Speed Switching Unit in mm Low forward voltage : VF = 0.23V typ. @IF = 5mA Small package : SC-59 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage


    Original     		PDF 1SS377 SC-59 O-236MOD 1SS377

    Untitled

    Abstract: No abstract text available
    Text: 1SS377 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS377 High Speed Switching Unit: mm z Low forward voltage : VF = 0.23V typ. @IF = 5mA z Small package : SC-59 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage


    Original     		PDF 1SS377 SC-59 O-236MOD

    TO-236MOD

    Abstract: No abstract text available
    Text: 1SS377 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS377 High Speed Switching Unit in mm z Low forward voltage : VF = 0.23V typ. @IF = 5mA z Small package : SC-59 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V


    Original     		PDF 1SS377 SC-59 O-236MOD 100mA TO-236MOD

    1SS377

    Abstract: No abstract text available
    Text: 1SS377 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS377 High Speed Switching Unit in mm l Low forward voltage : VF = 0.23V typ. @IF = 5mA l Small package : SC-59 Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage


    Original     		PDF 1SS377 SC-59 O-236MOD 1SS377

    Untitled

    Abstract: No abstract text available
    Text: Product specification 1SS377 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low forward voltage :VR =0.23V Typ . @IF = 5mA 0.55 Small package +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01


    Original     		PDF 1SS377 OT-23

    SCJ0004N

    Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
    Text: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード


    Original     		PDF SCJ0004N TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 SCJ0004N JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


    Original     		PDF BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983

    Variable Capacitance Diodes

    Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
    Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A


    Original     		PDF TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG02 CRG01 CRG04 CMG06 Variable Capacitance Diodes 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24

    DIODE marking S4 59A

    Abstract: DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323
    Text: 2008.07 Renesas Diodes Status List Topic_Ultra-Small Zener Diodes " RKZ-KP Series " - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3


    Original     		PDF REJ16G0002-2200 DIODE marking S4 59A DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323

    SSM3J307T

    Abstract: SSM3J328R SSM3J334R
    Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g


    Original     		PDF 200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R

    smd code book

    Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
    Text: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ


    Original     		PDF OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


    Original     		PDF SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126

    STF12A80

    Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
    Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer


    Original     		PDF 02CZ10 02CZ11 02CZ12 02CZ13 02CZ15 02CZ16 02CZ18 02CZ2 02CZ20 STF12A80 BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B

    Untitled

    Abstract: No abstract text available
    Text: 1SS377 T O SH IB A TOSHIBA DIODE HIGH SPEED SWITCHING. 1 SS377 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm ,+ 0 .5 ’ -Q 3 • . Low Forward Voltage : Vp = 0.23V Typ. @Ip = 5mA Small Package : SC-59 = +Q85 IO HO dd + I d i MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 1SS377 SS377 SC-59

    vr-1M

    Abstract: 1SS377 u25 diode
    Text: 1SS377 TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS377 HIGH SPEED SWITCHING. Unit in mm 2 .5 +1 0Q.53 • • i «5+Û25 Low Forward Voltage : Vp = 0.23V Typ. @Ip = 5mA Small Package : SC-59 ¿1 —Q 15 i HO dd + i MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 1SS377 SC-59 vr-1M 1SS377 u25 diode

    Untitled

    Abstract: No abstract text available
    Text: 1SS377 TOSHIBA TOSHIBA DIODE HIGH SPEED SWITCHING. 1 SS377 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm ,+ 0 .5 —Q 3 • . Low Forward Voltage : Vp = 0.23V Typ. @Ip = 5mA Small Package : SC-59 =+ Q 8 5 IO HO dd + I d i M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF 1SS377 SS377 SC-59

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 1SS377 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE U • WÊÊÊF < ; ^ 7 7 9Ê Ê F w ar m m HIGH SPEED SWITCHING. U nit in mm + 0. 5 2.5 - 0 ,3 c. + a 2 5 , • Low Forward Voltage : Vp = 0.23V Typ. @Ip = 5mA in HO • Small Package dd


    OCR Scan     		PDF 1SS377 SC-59

    1S1585

    Abstract: 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241
    Text: Super-Mini Diodes SOT-23MOD, SOT-143MOD. F6 Mark Equivalent other package Type No. A3 1S1585 Anode common Cathode comon Electrical Characteristics (Ta=25°C) Type No. Application V r(V) IO(mA) trr (ns) Connection JX. Remarks 1SS181 High-speed switching 80


    OCR Scan     		PDF OT-23MOD, OT-143MOD. 1S1585 107YP 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241

    S3 DIODE schottky

    Abstract: S4 DIODE schottky 2SA1015 MARK MQ 1S1585 common anode schottky diode DIODE MARK B
    Text: Ultra S u per Mini Diodes Type No. F6 Electrical Characteristics {Ta=25°C Application Va V) lo(mA) trr(ns) 1SS300 High-speed switching 80 100 1.6TYP 1SS301 High-speed switching 60 100 1.6TYP 1SS302 High-speed switching 60 100 1.6TYP 1SS322 High-speed switching


    OCR Scan     		PDF 1SS300 1SS301 1SS302 1SS322 1SS357 1SS367 1SS370 1SS372 1SS378 HN1D01FU S3 DIODE schottky S4 DIODE schottky 2SA1015 MARK MQ 1S1585 common anode schottky diode DIODE MARK B