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    1SS372 Search Results

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    1SS372 Price and Stock

    Toshiba America Electronic Components 1SS372(TE85L,F)

    DIODE SCHOTTKY 10V 100MA USM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 1SS372(TE85L,F) Reel 6,000 3,000
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    • 10000 $0.04704
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    1SS372(TE85L,F) Cut Tape 4,017 1
    • 1 $0.32
    • 10 $0.221
    • 100 $0.1117
    • 1000 $0.06762
    • 10000 $0.06762
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    1SS372(TE85L,F) Digi-Reel 1
    • 1 $0.32
    • 10 $0.221
    • 100 $0.1117
    • 1000 $0.06762
    • 10000 $0.06762
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    Avnet Americas 1SS372(TE85L,F) Reel 24 Weeks 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.0447
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    Mouser Electronics 1SS372(TE85L,F) 19,827
    • 1 $0.32
    • 10 $0.221
    • 100 $0.092
    • 1000 $0.068
    • 10000 $0.047
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    Quest Components 1SS372(TE85L,F) 7,568
    • 1 $0.605
    • 10 $0.605
    • 100 $0.605
    • 1000 $0.605
    • 10000 $0.1815
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    TTI 1SS372(TE85L,F) Reel 3,000
    • 1 -
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    • 100 -
    • 1000 -
    • 10000 $0.044
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    Avnet Asia 1SS372(TE85L,F) 24 Weeks 3,000
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    Chip1Stop 1SS372(TE85L,F) Cut Tape 21,513
    • 1 -
    • 10 $0.28
    • 100 $0.125
    • 1000 $0.0947
    • 10000 $0.0843
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    Micro Commercial Components 1SS372-TP

    DIODE ARR SCHOT 10V 100MA SOT323
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 1SS372-TP Bulk 3,000
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    • 10000 $0.05848
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    Mouser Electronics 1SS372-TP
    • 1 $0.34
    • 10 $0.239
    • 100 $0.117
    • 1000 $0.068
    • 10000 $0.043
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    Toshiba America Electronic Components 1SS372TE85LF

    Rectifier Diode Small Signal Schottky 15V 0.1A 3-Pin USM T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical 1SS372TE85LF 21,513 197
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    • 1000 $0.1184
    • 10000 $0.1054
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    1SS372TE85LF 6,000 341
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    • 1000 $0.2149
    • 10000 $0.2029
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    1SS372TE85LF 690 341
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    • 1000 $0.2221
    • 10000 $0.2221
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    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 1SS372(TE85L F) 1,555
    • 1 $0.775
    • 10 $0.775
    • 100 $0.775
    • 1000 $0.31
    • 10000 $0.31
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    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 1SS372(TE85L) 853
    • 1 $2.12
    • 10 $2.12
    • 100 $2.12
    • 1000 $0.8745
    • 10000 $0.8745
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    1SS372 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Type PDF
    1SS372 Galaxy Semi-Conductor Holdings Schottky Barrier Diode Original PDF
    1SS372 Kexin High Speed Switching Diode Original PDF
    1SS372 Toshiba Japanese - Diodes Original PDF
    1SS372 Toshiba shottky barrier diode Original PDF
    1SS372 TY Semiconductor Silicon Epitaxial Schottky Barrier Diode - SOT-323 Original PDF
    1SS372 TY Semiconductor High Speed Switching Diode - SOT-323 Original PDF
    1SS372 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1SS372 Toshiba DIODE (HIGH SPEED SWITCHING APPLICATION) Scan PDF
    1SS372 Toshiba DIODE Scan PDF
    1SS372(TE85L,F) Toshiba America Electronic Components SMALL-SIGNAL SCHOTTKY BARRIER DI Original PDF

    1SS372 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Product specification 1SS372 Features Low forward voltage:VF = 0.23 V Typ @ IF = 5mA Absolute M axim um R atings T a = 25 Param eter M axim um (peak) reverse voltage Sym bol Rating Unit V RM 15 V Reverse voltage VR 10 V M axim um (peak) forward current I FM


    Original
    PDF 1SS372

    schottky marking code PD

    Abstract: No abstract text available
    Text: 1SS372W SILICON EPITAXIAL SCHOTTKY BARRIER DIODE Applications • High speed switching 3 1 2 Marking Code: ME Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Maximum Peak Reverse Voltage VRM 15 V Reverse Voltage VR 10 V Average Forward Current


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    PDF 1SS372W schottky marking code PD

    Untitled

    Abstract: No abstract text available
    Text: 1SS372 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS372 High Speed Switching Application Unit in mm Small package Low forward voltage: VF = 0.23V typ. @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage


    Original
    PDF 1SS372

    Untitled

    Abstract: No abstract text available
    Text: 1SS372 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS372 High Speed Switching Application Unit: mm z Small package z Low forward voltage: VF = 0.23V typ. @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15


    Original
    PDF 1SS372 SC-70

    diode marking N9

    Abstract: SOT-323 n9 diode N9 1SS372 sot 323 marking code sot323 marking K
    Text: BL Galaxy Electrical Production specification Schottky Barrier Diode 1SS372 FEATURES z Small surface mounting type. z Small package. z Low forward voltage:VF=0.23V typ . Pb Lead-free APPLICATIONS z For general purpose applications. SOT-323 ORDERING INFORMATION


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    PDF 1SS372 OT-323 BL/SSSKF013 100mA diode marking N9 SOT-323 n9 diode N9 1SS372 sot 323 marking code sot323 marking K

    Untitled

    Abstract: No abstract text available
    Text: Product specification 1SS372 Features Low forward voltage:VF = 0.23 V Typ @ IF = 5mA Absolute M axim um R atings T a = 25 Param eter M axim um (peak) reverse voltage Sym bol Rating Unit V RM 15 V Reverse voltage VR 10 V M axim um (peak) forward current I FM


    Original
    PDF 1SS372

    Untitled

    Abstract: No abstract text available
    Text: 1SS372 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS372 High Speed Switching Application Unit: mm l Small package l Low forward voltage: VF = 0.23V typ. @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage


    Original
    PDF 1SS372 SC-70 100mA

    MARKING N9

    Abstract: diode marking N9
    Text: 1SS372 Schottky Barrier Diodes SOT-323 Features — Small surface mounting type. — Small package. — Low forward voltage:VF=0.23V typ . Applications — For general purpose applications. Dimensions in inches and (millimeters) Ordering Information Type No. Marking


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    PDF 1SS372 OT-323 1SS372 100mA MARKING N9 diode marking N9

    1SS372

    Abstract: No abstract text available
    Text: Diodes SMD Type Silicon Epitaxial Schottky Barrier Type 1SS372 Features Small package Low forward voltage : VF = 0.23V typ. @ IF=5mA 1 ANODE 3 CATHODE/ANOD 2 CATHODE Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Maximum (Peak) reverse voltage


    Original
    PDF 1SS372 100mA 1SS372

    1SS372

    Abstract: No abstract text available
    Text: 1SS372 東芝ダイオード シリコンエピタキシャルショットキバリア形 1SS372 ○ 高速スイッチング用 単位: mm z 小型外囲器なので高密度実装に最適です。 z 順方向電圧が低い。 : VF = 0.23V 標準 @IF = 5mA


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    PDF 1SS372 100mA 1SS372

    1SS372

    Abstract: No abstract text available
    Text: 1SS372 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS372 High Speed Switching Application Unit: mm z Small package z Low forward voltage: VF = 0.23V typ. @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15


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    PDF 1SS372 SC-70 1SS372

    PBD 3511

    Abstract: No abstract text available
    Text: WON-TOP ELECTRONICS Material Composition Declaration Package Information Package SOT-323 Package Weight mg 6 Product Group Type No. MMBD352W RB706F-40, RB715F, RB717F BAS70W / AW / CW / SW 1SS372 MMBD717W / AW / CW / SW BAT54W / AW / CW / SW MMBD330 BAS40W / AW / CW / SW


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    PDF OT-323 MMBD352W RB706F-40, RB715F, RB717F BAS70W 1SS372 MMBD717W BAT54W MMBD330 PBD 3511

    Untitled

    Abstract: No abstract text available
    Text: 1SS372 SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features  Low Turn-On Voltage   Fast Switching Speed PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability


    Original
    PDF 1SS372 OT-323, MIL-STD-202,

    1SS372

    Abstract: No abstract text available
    Text: 1SS372 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS372 High Speed Switching Application Unit: mm l Small package l Low forward voltage: VF = 0.23V typ. @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage


    Original
    PDF 1SS372 1SS372

    1SS372

    Abstract: No abstract text available
    Text: 1SS372 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS372 High Speed Switching Application Unit: mm Small package Low forward voltage: VF = 0.23V typ. @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage


    Original
    PDF 1SS372 1SS372

    1SS372

    Abstract: No abstract text available
    Text: 1SS372 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS372 High Speed Switching Application Unit: mm z Small package z Low forward voltage: VF = 0.23V typ. @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15


    Original
    PDF 1SS372 SC-70 1SS372

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diodes 1SS372 SCHOTTKY BARRIER DIODE SOT-323 FEATURES  Small Package  Low Forward Voltage APPLICATIONS  High Speed Switching MARKING: N9 MAXIMUM RATINGS Ta=25℃ unless otherwise noted


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    PDF OT-323 1SS372 OT-323 100mA

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 1SS372 Features • • • • • Halogen free available upon request by adding suffix "-HF" High reliability


    Original
    PDF 1SS372 OT-323

    SCJ0004N

    Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
    Text: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード


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    PDF SCJ0004N TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 SCJ0004N JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT

    Untitled

    Abstract: No abstract text available
    Text: 1SS372 T O SH IB A TOSHIBA DIODE HIGH SPEED SWITCHING APPLICATION 1 SS372 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm 2.1 ± 0.1 • • 1.2 5 ± 0.1 . Small Package Low Forward Voltage : Vp = 0.23V TYP. @Ip = 5mA o c + i 3 - MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan
    PDF 1SS372 SS372

    1SS372

    Abstract: No abstract text available
    Text: TOSHIBA 1SS372 TOSHIBA DIODE HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS372 Unit in mm 2.1 ± 0.1 • • Small Package Low Forward Voltage : Vjn = 0.23V TYP. @Ijr = 5mA ,1 .2 5 ± 0 .1 oo + I 3E- •a 2 MAXIMUM RATINGS (Ta = 25°C)


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    PDF 1SS372 1SS372

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 1SS372 TO SHIBA DIODE SILICON EPITAXIAL SCH OTT KY BARRIER TYPE 1 HIGH SPEED SWITCHING APPLICATION • Small Package • Low Forward Voltage : Vf = 0.23V TY P . @Ijr = 5 m A M A X IM U M RATINGS (Ta = 25°C) SYMBOL RATING UNIT VRM 15 V Reverse Voltage


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    PDF 1SS372

    SS372

    Abstract: No abstract text available
    Text: 1SS372 T O SH IB A TOSHIBA DIODE HIGH SPEED SWITCHING APPLICATION 1 SS372 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm 2.1 ± 0.1 • • 1.2 5 ± 0.1 Small Package Low Forward Voltage : Vp = 0.23V TYP. @Ip = 5mA o c + i MAXIMUM RATINGS (Ta = 25°C)


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    PDF 1SS372 SS372 SS372

    1S1585

    Abstract: 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241
    Text: Super-Mini Diodes SOT-23MOD, SOT-143MOD. F6 Mark Equivalent other package Type No. A3 1S1585 Anode common Cathode comon Electrical Characteristics (Ta=25°C) Type No. Application V r(V) IO(mA) trr (ns) Connection JX. Remarks 1SS181 High-speed switching 80


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    PDF OT-23MOD, OT-143MOD. 1S1585 107YP 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241