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    1SS362 Price and Stock

    Toshiba America Electronic Components 1SS362FV,L3F

    DIODE ARRAY GP 80V 100MA VESM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 1SS362FV,L3F Digi-Reel 79,994 1
    • 1 $0.12
    • 10 $0.081
    • 100 $0.12
    • 1000 $0.03697
    • 10000 $0.03311
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    1SS362FV,L3F Cut Tape 79,994 1
    • 1 $0.12
    • 10 $0.081
    • 100 $0.12
    • 1000 $0.03697
    • 10000 $0.03311
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    1SS362FV,L3F Reel 72,000 8,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.02695
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    Mouser Electronics 1SS362FV,L3F 62,449
    • 1 $0.12
    • 10 $0.081
    • 100 $0.042
    • 1000 $0.034
    • 10000 $0.024
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    Toshiba America Electronic Components 1SS362TE85LF

    DIODE ARRAY GP 80V 80MA SSM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 1SS362TE85LF Digi-Reel 46,499 1
    • 1 $0.16
    • 10 $0.109
    • 100 $0.16
    • 1000 $0.04994
    • 10000 $0.04994
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    1SS362TE85LF Cut Tape 46,499 1
    • 1 $0.16
    • 10 $0.109
    • 100 $0.16
    • 1000 $0.04994
    • 10000 $0.04994
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    1SS362TE85LF Reel 42,000 3,000
    • 1 -
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    • 10000 $0.04225
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    Mouser Electronics 1SS362TE85LF 59,016
    • 1 $0.16
    • 10 $0.109
    • 100 $0.056
    • 1000 $0.05
    • 10000 $0.031
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    Toshiba America Electronic Components 1SS362FVL3F

    Diode Switching 85V 0.3A 3-Pin SC-105AA Emboss T/R - Tape and Reel (Alt: 1SS362FV,L3F)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 1SS362FVL3F Reel 12 Weeks 8,000
    • 1 -
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    • 100 -
    • 1000 -
    • 10000 $0.02295
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    Toshiba America Electronic Components 1SS362(TE85L,F)

    Diode Switching 85V 0.08A 3-Pin SSM T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical 1SS362(TE85L,F) 155,897 444
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    • 1000 $0.0492
    • 10000 $0.0376
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    1SS362(TE85L,F) 6,000 407
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    • 1000 $0.1798
    • 10000 $0.1698
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    1SS362(TE85L,F) 3,000 3,000
    • 1 -
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    • 100 -
    • 1000 -
    • 10000 $0.042
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    1SS362(TE85L,F) 1,592 407
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.1798
    • 10000 $0.1798
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    Newark 1SS362(TE85L,F) Cut Tape 20,695 5
    • 1 $0.25
    • 10 $0.151
    • 100 $0.069
    • 1000 $0.061
    • 10000 $0.061
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    Quest Components 1SS362(TE85L,F) 6,092
    • 1 $0.8
    • 10 $0.8
    • 100 $0.8
    • 1000 $0.8
    • 10000 $0.14
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    Chip1Stop 1SS362(TE85L,F) Cut Tape 155,897
    • 1 -
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    • 100 $0.0591
    • 1000 $0.0394
    • 10000 $0.0301
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    EBV Elektronik 1SS362(TE85L,F) 13 Weeks 3,000
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    Toshiba America Electronic Components 1SS362FV,L3F(T

    Diode Switching 85V 0.1A 3-Pin VESM T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical 1SS362FV,L3F(T 77,556 479
    • 1 -
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    • 1000 $0.0443
    • 10000 $0.0323
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    1SS362FV,L3F(T 16,000 16,000
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    Arrow Electronics 1SS362FV,L3F(T 16,000 12 Weeks 16,000
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    Newark 1SS362FV,L3F(T Cut Tape 5
    • 1 $0.201
    • 10 $0.156
    • 100 $0.066
    • 1000 $0.038
    • 10000 $0.038
    		Buy Now
    Chip1Stop 1SS362FV,L3F(T Cut Tape 77,556
    • 1 -
    • 10 -
    • 100 $0.0652
    • 1000 $0.0417
    • 10000 $0.0293
    		Buy Now
    EBV Elektronik 1SS362FV,L3F(T 13 Weeks 8,000
    • 1 -
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    Find more 1SS362 price and stock on Findchips.com

    1SS362 Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1SS362 Toshiba Japanese - Diodes Original PDF
    1SS362 Toshiba Diodes Original PDF
    1SS362 Toshiba Diode - Silicon Epitaxial Planar Type Original PDF
    1SS362 Toshiba Silicon Epitaxial Planar Type Original PDF
    1SS362 Toshiba 1SS362 - DIODE 0.08 A, 2 ELEMENT, SILICON, SIGNAL DIODE, 1-2S1C, 3 PIN, Signal Diode Original PDF
    1SS362 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1SS362 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    1SS362 Toshiba DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION) Scan PDF
    1SS362FV Toshiba Japanese - Diodes Original PDF
    1SS362FV Toshiba Diodes Original PDF
    1SS362FV Toshiba 1SS362 - DIODE 0.1 A, 85 V, 2 ELEMENT, SILICON, SIGNAL DIODE, 1-1Q1A, VESM, 3 PIN, Signal Diode Original PDF
    1SS362FV,L3F Toshiba Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, SWITCHING DIODE 80V VESM Original PDF
    1SS362FV(TPL3) Toshiba 1SS362FV - Diode Switching 85V 0.1A 3-Pin T/R Original PDF
    1SS362TE85L Toshiba 1SS362 - DIODE 0.08 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode Original PDF
    1SS362TE85LF Toshiba Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE SW 80V 80MA SSM Original PDF
    1SS362(TE85L,F) Toshiba 1SS362 - Diode Switching 85V 0.08A 3-Pin SSM T/R Original PDF
    1SS362TE85R Toshiba 1SS362 - DIODE 0.08 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode Original PDF

    1SS362 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 1SS362FV TOSHIBA Diode Silicon Epitaxial Planar Type 1SS362FV Ultra-High-Speed Switching Applications Unit: mm z Small package 0.22±0.05 z Fast reverse recovery time: trr = 1.6 ns typ. Symbol Rating Unit VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current


    Original     		PDF 1SS362FV 05mitation,

    Untitled

    Abstract: No abstract text available
    Text: 1SS362 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS362 Ultra High Speed Switching Application Unit: mm z Small package z Low forward voltage : VF 3 = 0.97 V (typ.) z Fast reverse recovery time : trr = 1.6 ns (typ.) z Small total capacitance : CT = 0.5 pF (typ.)


    Original     		PDF 1SS362

    1SS362FV

    Abstract: No abstract text available
    Text: 1SS362FV 東芝ダイオード シリコンエピタキシャルプレーナ形 1SS362FV 単位: mm せ ん 頭 せ ん 平 均 サ ジ 単位 VRM 85 V 電 圧 VR 80 V 頭 順 電 流 IFM 300* mA 整 流 電 流 IO 100* mA IFSM 1* A 電 ー 定格 逆 逆


    Original     		PDF 1SS362FV 100mA 1SS362FV

    1ss362

    Abstract: No abstract text available
    Text: 1SS362 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS362 Ultra High Speed Switching Application Unit in mm Small package Low forward voltage : VF = 0.97V typ. Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.5pF (typ.) Maximum Ratings (Ta = 25°C)


    Original     		PDF 1SS362 961001EAA2' 1ss362

    1SS362

    Abstract: No abstract text available
    Text: 1SS362 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS362 Ultra High Speed Switching Application Unit: mm Small package Low forward voltage : VF = 0.97V typ. Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 0.5pF (typ.) Maximum Ratings (Ta = 25°C)


    Original     		PDF 1SS362 1SS362

    Untitled

    Abstract: No abstract text available
    Text: 1SS362 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS362 Ultra High Speed Switching Application Unit: mm l Small package l Low forward voltage : VF = 0.97V typ. l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance : CT = 0.5pF (typ.)


    Original     		PDF 1SS362 100mA

    Untitled

    Abstract: No abstract text available
    Text: 1SS362 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS362 Ultra High Speed Switching Application Unit: mm z Small package z Low forward voltage : VF = 0.97V typ. z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 0.5pF (typ.)


    Original     		PDF 1SS362

    1SS362

    Abstract: No abstract text available
    Text: 1SS362 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS362 Ultra High Speed Switching Application Unit: mm l Small package l Low forward voltage : VF = 0.97V typ. l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance : CT = 0.5pF (typ.)


    Original     		PDF 1SS362 1SS362

    1SS362

    Abstract: No abstract text available
    Text: 1SS362 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS362 Ultra High Speed Switching Application Unit: mm z Small package z Low forward voltage : VF 3 = 0.97 V (typ.) z Fast reverse recovery time : trr = 1.6 ns (typ.) z Small total capacitance : CT = 0.5 pF (typ.)


    Original     		PDF 1SS362 1SS362

    1SS362

    Abstract: No abstract text available
    Text: 1SS362 東芝ダイオード シリコンエピタキシャルプレーナ形 1SS362 単位: mm ○ 超高速度スイッチング用 z z z z 外形が小さい。 順方向特性が良い。 逆回復時間が短い。 端子間容量が小さい。 : VF 3 = 0.97 V (標準)


    Original     		PDF 1SS362 100mA 1SS362

    1SS362FV

    Abstract: No abstract text available
    Text: 1SS362FV TOSHIBA Diode Silicon Epitaxial Planar Type 1SS362FV Ultra-High-Speed Switching Applications Unit: mm 0.22±0.05 z Small package z Fast reverse recovery time: trr = 1.6 ns typ. 0.8±0.05 Symbol Rating Unit VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current


    Original     		PDF 1SS362FV 1SS362FV

    SCJ0004N

    Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
    Text: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード


    Original     		PDF SCJ0004N TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 SCJ0004N JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


    Original     		PDF BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983

    Variable Capacitance Diodes

    Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
    Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A


    Original     		PDF TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG02 CRG01 CRG04 CMG06 Variable Capacitance Diodes 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


    Original     		PDF SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126

    CAT7105CA

    Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
    Text: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A


    Original     		PDF 5CE120C 5KE120CA 5CE120CA 5CE12A 5KE12A 5CE12C 5KE12CA 5CE12CA CAT7105CA mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al

    961001EAA2

    Abstract: No abstract text available
    Text: 1SS362 TO SHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS362 Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. • • • • Small Package Low Forward Voltage : Vp = 0.97V Typ. Fast Reverse Recovery Time : trr= 1.6ns (Typ.) Small Total Capacitance


    OCR Scan     		PDF 1SS362 961001EAA2' 961001EAA2

    diode Z47

    Abstract: z43 diode Z5.6 Z3.3 S360 DIODE 02CZ5 diode Z27 S368 diode zener z6 1s diode
    Text: Diodes Signal Diode for General Purpose R atino V r V lo im A ) Switching Diode Schottky Barrier Diode Zener Diode use S-M IN I (SOT-23MOD) BO 80 — — _ — HN2D01FU _ 80 80 _ — — — HN2D02FU BO 80 80 — ssc SS M use 1SS362 1S S368 USM — 1S S 352


    OCR Scan     		PDF HN2D01FU HN2D02FU OT-23MOD) 02CZ5 diode Z47 z43 diode Z5.6 Z3.3 S360 DIODE diode Z27 S368 diode zener z6 1s diode

    Untitled

    Abstract: No abstract text available
    Text: 1SS362 SILICON EPITAXIAL PLANAR TYPE U nit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. • • • • Small Package Low Forward Voltage F ast Reverse Recovery Time Small Total Capacitance i.6± M o.sto.i V f = 0.97V Typ. trr = 1.6ns (Typ.) CT = 0.5pF (Typ.)


    OCR Scan     		PDF 1SS362 100mA

    1SS362

    Abstract: No abstract text available
    Text: TOSHIBA 1SS362 1 SS362 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. • • • • Small Package Low Forward Voltage : Vjn = 0.97V Typ. Fast Reverse RecoveryTime : trr= 1.6ns (Typ.) Small Total Capacitance


    OCR Scan     		PDF 1SS362 961001EAA2' 1SS362

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 1SS362 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS362 Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. • Sm all Package • Low Forward Voltage • Fast Reverse Recovery Time : tr r = 1.6ns Typ. • Sm all Total Capacitance : Vp = 0.97V (Typ.)


    OCR Scan     		PDF 1SS362 961001EAA2'

    SS362

    Abstract: No abstract text available
    Text: 1SS362 TOSHIBA 1 SS3 62 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. • • • • 1.6 ± 0.2 Small Package Low Forward Voltage : Vjr = 0.97V Typ. Fast Reverse RecoveryTime : tr r = i.6ns (Typ.) Small Total Capaçi tançç


    OCR Scan     		PDF 1SS362 961001EAA2' SS362

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272


    OCR Scan     		PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737

    S3 DIODE schottky

    Abstract: S4 DIODE schottky 2SA1015 MARK MQ 1S1585 common anode schottky diode DIODE MARK B
    Text: Ultra S u per Mini Diodes Type No. F6 Electrical Characteristics {Ta=25°C Application Va V) lo(mA) trr(ns) 1SS300 High-speed switching 80 100 1.6TYP 1SS301 High-speed switching 60 100 1.6TYP 1SS302 High-speed switching 60 100 1.6TYP 1SS322 High-speed switching


    OCR Scan     		PDF 1SS300 1SS301 1SS302 1SS322 1SS357 1SS367 1SS370 1SS372 1SS378 HN1D01FU S3 DIODE schottky S4 DIODE schottky 2SA1015 MARK MQ 1S1585 common anode schottky diode DIODE MARK B