STH60N05
Abstract: No abstract text available
Text: * SGS-THOMSON L[IOT MS r J STH60N05 STH60N05FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STH60N05 STH60N05FI V dss R DS on Id 50 V 50 V 0.023 Ï2 0.023 n 60 A 36 A . AVALANCHE RUGGEDNESS TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C
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STH60N05
STH60N05FI
ATT218
STH60N05/FI
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BUV48I
Abstract: BUV48AF1 BUV48F1 SGS V48A BUV48FI bux48a equivalent SGS V48A WITH CIRCUIT DIAGRAM bux48 equivalent I v48a BUX47
Text: 7# SCS-THOMSON BUX47/V47/V47FI BUX47A/V47A/47AFI HIGH VOLTAGE POWER SWITCH ESCRIPTION he BUX47/A, BUV47/A, BUV47F1/AFI are silicon mltiepitaxial mesa NPN transistors mounted resoctively in TO-3 metal case, TO-218 piastic ackage and ÎSOWATT218 fully isolated package,
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BUX47/V47/V47FI
BUX47A/V47A/47AFI
BUX47/A,
BUV47/A,
BUV47FI/AFI
O-218
SOWATT218
BUX47
BUV47
BUV48I
BUV48AF1
BUV48F1
SGS V48A
BUV48FI
bux48a equivalent
SGS V48A WITH CIRCUIT DIAGRAM
bux48 equivalent
I v48a
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Untitled
Abstract: No abstract text available
Text: di S G S -T H O M S O N RflD B»ilL[lCTK KlölE STW7N A100 STH7NA100FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE Voss RoS(on Id STW7NA100 STH7NA100FI 1000 V 1000 V < 1 .7 0 < 1.7 n 7A 4.3 A • . . ■ . ■ TYPICAL Ros(on) = 1.45 Q ± 30V GATE TO SOURCE VOLTAGE RATING
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STW7NA100
STH7NA100FI
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transistor 352 AH
Abstract: No abstract text available
Text: HZJ SGS-THOMSON IRFP350FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS ^DS on IRFP350FI 400 V 0.3 0 Id 10 A • HIGH VOLTAGE - FOR OFF-LINE SNIPS • HIGH CURRENT - FOR SMPS UPTO 350W • ULTRA FAST SWITCHING - FOR OPERATION AT > 100KHZ • EASY DRIVE - REDUCES SIZE AND COST
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IRFP350FI
100KHZ
ISOWATT218
500ms
transistor 352 AH
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BUX98PI
Abstract: BUS08D T1P35C bux98p TP41A BUS08DFI BUF420AI Bo677A B0X54C BO677
Text: SELECTION GUIDE BY PACKAGE OPAK IPAK % DEVICE TYPE VcBO V ceO NPN PNP V MJD200T4 MJD3055T4 MJD31BT4 MJD44H11T4 STD909T4 IIJ m t2 T 4 MJD31CT4 «J012W 4 MJD47T4 MJ0340T4 MJD50T4 MJD210T4 MJD2955T4 MJD32BT4 MJ045H11T4 STD910T4 MJD32CT4 MJD127T4 MJD350T4 BULD118-1
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MJD200T4
MJD3055T4
MJD31BT4
MJD44H11T4
STD909T4
MJD31CT4
J012W
MJD47T4
MJ0340T4
MJD50T4
BUX98PI
BUS08D
T1P35C
bux98p
TP41A
BUS08DFI
BUF420AI
Bo677A
B0X54C
BO677
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SGSF32
Abstract: transistor f421 F421 Transistor
Text: 7 T 2 T B 3 7 o o a ' î i s a i m SGSF321/IF321 SGSF421/IF421 SGS-THOMSON [i$ 0 g ^ ( 5 i[ L [ i( g T O ( M ( g S S G S-THOMSON 3GE » FASTSWITCH HOLLOW-EMITTER NPN TRANSISTORS • HIG H SW IT C H IN G SPEED NPN PO W ER TRANSISTORS ■ HOLLOW EMITTER TECHNOLOGY
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SGSF321/IF321
SGSF421/IF421
70kHz
500ms
SGSF32
transistor f421
F421 Transistor
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transistor BU 921 T
Abstract: 922P BU921 oms 450 BU920T BU922T 921P 922p ic TO3 package RthJC BU920
Text: 7qsqg37 0056575 □ • / T ^ 3 3 ^ ' 2 . ct SGS-THOMSON bÜ IIS fÆ BU922/P/PFI/T S G S-TH0MS0N 3QE D HIGH VOLTAGE POWER DISSIPATION . HIGH VOLTAGE POWER DARLINGTON ■ AUTOMOTIVE IGNITION APPLICATIONS ■ HIGH CURRENT DESCRIPTION The BU920/921/922, BU920P/921P/922P, BU920PFI/BU921PFI/BU922PFI and BU920T/921T/922T
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7qHqS37
BU922/P/PFI/T
BU920/921/922,
BU920P/921P/922P,
BU920-PFI/BU921PFI/BU922PFI
BU920T/921T/922T
OT-93
ISOWATT218
O-220
O-218)
transistor BU 921 T
922P
BU921
oms 450
BU920T
BU922T
921P
922p ic
TO3 package RthJC
BU920
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IF465
Abstract: F465 SGSF465 SGSF465-SGSIF465-SGSF565 lk 977 transistor npn high speed switching 5A 600v sgs transistors NPN Transistor 450v 1A
Text: r r S G S -T H O M S O N 7 # « i m i i O T O M i E S S G S G S F 4 6 5 S J F 4 6 5 / F 5 6 5 FASTSWITCH HOLLOW-EMITTER NPN TRANSISTORS HIGH SWITCHING SPEED NPN POWER TRANSISTORS HOLLOW EMITTER FOR FAST SWITCHING HIGH VOLTAGE FOR OFF-LINE APPLICA TIONS 50kHz SWITCHING SPEED WITH EASY
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SGSF465
SGSIF465/F565
50kHz
be-SGSF565
1SOWATT218
ISOWATT218
500ms
IF465
F465
SGSF465-SGSIF465-SGSF565
lk 977
transistor npn high speed switching 5A 600v
sgs transistors
NPN Transistor 450v 1A
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