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    1S211 Price and Stock

    Moujen Switch M6S-B31S2-110B

    SWITCH SELECT 3POS SPDT 2A 250V
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    DigiKey M6S-B31S2-110B 20
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    • 100 $19.48
    • 1000 $16.58
    • 10000 $16.58
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    Moujen Switch M6S-C31S2-110G

    SWITCH SELECT 3POS SPDT 2A 250V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey M6S-C31S2-110G 20
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    • 100 $19.48
    • 1000 $16.58
    • 10000 $16.58
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    Moujen Switch M6S-B31S2-110R

    SWITCH SELECT 3POS SPDT 2A 250V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey M6S-B31S2-110R 20
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    • 100 $19.48
    • 1000 $16.58
    • 10000 $16.58
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    Moujen Switch M6S-C31S2-110W

    SWITCH SELECT 3POS SPDT 2A 250V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey M6S-C31S2-110W 20
    • 1 -
    • 10 -
    • 100 $19.48
    • 1000 $16.58
    • 10000 $16.58
    		Buy Now

    Moujen Switch M6S-A31S2-110B

    SWITCH SELECT 3POS SPDT 2A 250V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey M6S-A31S2-110B 20
    • 1 -
    • 10 -
    • 100 $19.48
    • 1000 $16.58
    • 10000 $16.58
    		Buy Now
    Find more 1S211 price and stock on Findchips.com

    1S211 Datasheets (22)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1S211 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1S2110 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1S2110 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    1S2110A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1S2111 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1S2111A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1S2112 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1S2112A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1S2113 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1S2113A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1S2114 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1S2114A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1S2115 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1S2115A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1S2116 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1S2116A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1S2117 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1S2117A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1S2118 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1S2118A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    1S211 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    k2645

    Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
    Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt


    Original     		PDF MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417

    MRF951

    Abstract: No abstract text available
    Text: Order this data sheet by MRF951/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Low Noise, High-Frequency Transistors r MRF951 MMBR951,L MRF9511,L . . . designed for use in high gain, low noise small-signal amplifiers. This series features


    Original     		PDF MRF951/D MRF951 MMBR951 MRF9511 MRF951 MK145BP,

    IN751a

    Abstract: IN753a in752a in750A IN759A IN749A in758a IN755A IN757A IN756a
    Text: Diodes and Rectifiers C ase Drawing No. mW Max. Pow er D issipa tion at 25°C (Volts) Norn. V oltage ±5% at 5m A (O ) Max. S lo p e Imp. at 5m A (%/"C) Typ. Temp. Coef. at 5m A 1S2030A S07 BB 400 30 200 -0 0 7 1S2033A S07 BB 400 3-3 120 -0 0 7 1S2036A


    OCR Scan     		PDF 1S2030A 1S2033A 1S2036A 1S2039A 1S2043A 1S2047A 1S2051A 1S2056A 1S2062A 1S2068A IN751a IN753a in752a in750A IN759A IN749A in758a IN755A IN757A IN756a

    SL2128

    Abstract: MRF965 MRF961 BFRC96 case 317-01
    Text: MOTOROLA SC XSTRS/R F 4bE b3b7HS4 D 00=14173 b • MOTOROLA SEMICONDUCTOR TECHNICAL DATA BFR96 BFRC96 MRF961 MRF962 MRF965 T h e R F L in e NPN SILICO N H IG H FREQ UENCY TRANSISTORS The B FR 96 series transistors use the same state-of-the-art m icro ­


    OCR Scan     		PDF BFR96 BFRC96 MRF961 MRF962 MRF965 BFR96, BFRC96, MRF961, SL2128 MRF965 case 317-01

    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


    OCR Scan     		PDF 2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp

    transistor marking YD ghz

    Abstract: No abstract text available
    Text: 2SC4926-Silicon NPN Bipolar Transistor Application MPAK-4 V H F & U H F wide band amplifire Features 2 • H igh gain bandwidth product f-p = 11 GHz typ • High gain, low noise figure PG = 16.5 dB typ, NF = 1.1 dB typ at f = 900 M H z 3 4PI, 4 1. 2.


    OCR Scan     		PDF 2SC4926------Silicon transistor marking YD ghz

    2n7588

    Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
    Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.


    OCR Scan     		PDF

    ET 8211

    Abstract: No abstract text available
    Text: GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER New Plastic Package NE34018 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vos = 3 V, Ids = 20 mA FEATURES LOW COST MINIATURE PLASTIC PACKAGE (SOT-343) LOW NOISE FIGURE: 0.6 dB typical at 2 GHz CO HIGH ASSOCIATED GAIN:


    OCR Scan     		PDF OT-343) NE34018 NE34018 NE34018-TI-63 NE34018-TI-64 24-Hour ET 8211

    817 CN

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET C TO X BAND AMPLIFIER C TO X BAND OSC N-CHANNEL GaAs MESFET FEATURES NE72118 PACKAGE DIMENSIONS Units in mm HIGH POWER GAIN: Gs = 5.5 dB TYP at f = 12 GHz PACKAGE OUTLINE 18 ± 0.2 GATE LENGTH: Lg = 0.8 \im (recessed gate 2.1 GATE WIDTH: Wg = 330 \im


    OCR Scan     		PDF NE72118 NE72118 36e-10 24-Hour 817 CN

    Untitled

    Abstract: No abstract text available
    Text: *W LETT mL'hpt HMHEW P ackard Silicon Bipolar MMIC 2.5 GHz Variable Gain Amplifier Technical Data IVA-14208 IVA-14228 Features • Differential Input and Output Capability • DC to 2.5 GHz Bandwidth; 3.4 Gbits/s Data Rates • High Gain: 24 dB Typical • Wide Gain Control Range:


    OCR Scan     		PDF IVA-14208 IVA-14228 IVA-14208: IVA-14228: IVA-14228 IVA-14 IVA-14208 5091-5550E

    1s211

    Abstract: 2I k
    Text: SIEMENS BFP 183R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code


    OCR Scan     		PDF Q62702-F1594 OT-143R 900MHz 1S211 2I k

    sot 223 marking code jb

    Abstract: pj 939 pj 936 R/diode pj 936
    Text: Whpl H E W L E T T mLìiM P A C K A R D Silicon Bipolar Monolithic Amplifiers HPMA-0600 HPMA-0611 HPMA-0635 HPMA-0685 HPMA-0686 Technical Data Features HPMA-0600 • 3 dB B andw idth: DC to 1.0 GHz • 19.9 dB G ain Typical at 0.5 GHz • Low Noise F igure: 2.7 dB


    OCR Scan     		PDF HPMA-0600 HPMA-0611 HPMA-0635 HPMA-0685 HPMA-0686 HPMA-0600 HPMA-0635 HPMA-0686 5091-1546E sot 223 marking code jb pj 939 pj 936 R/diode pj 936

    chw marking sot23

    Abstract: sps 1951 transistor trimmer electron 3296 bw 9028 transistor smd marking BA rn ph 4148 zener diode
    Text: Contents at a Glance VOLUME I Device Index Alphanumeric . . viii Chapter One Selector G u id e . 1.1-1 Chapter Two RF Monolithic Integrated C ircu


    OCR Scan     		PDF

    HRMA-0470B

    Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61
    Text: Whal HEWLETT \HrJk PACKARD Communications Components Designer’s Catalog, GaAs and Silicon Products A Brief Sketch Hewlett-Packard is one of the world’s leading designers and manufacturers of RF and microwave semiconductors, optoelectronic, and fiber optic


    OCR Scan     		PDF E-28230 S-164 CH-8902 HRMA-0470B Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61

    881-1 nec

    Abstract: NE345L-20B NES1417-20B cd 17821 LA 7687 a sit 16250 NE72084 NE3451600 NES1417-10B NES1723-20B
    Text: N E C / 1SE CALIFORNIA NEC D b4S7414 Q001S37 1 T -S 1 -9 0 L, S-BAND POWER G aAs MESFET NE345 SERIES FEATURES APPLICATIONS • C H IP O R P A C K A G E O P T IO N S • L-BAN D R A D A R • H IG H P out 1 0 W & 2 0 W • N ARRO W -BAN D C O M M U N IC A TIO N S


    OCR Scan     		PDF b4S7414 G001S37 NE345 NE3451600 ofSiOz/SiNs72 S22-S21S12 NE345100 NE3451600 881-1 nec NE345L-20B NES1417-20B cd 17821 LA 7687 a sit 16250 NE72084 NES1417-10B NES1723-20B

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF949T1 NPN Silicon Low Noise Transistors Motorola's M R F 9 4 9 is a high perform ance N P N transistor designed for use in high gain, low noise sm all-signal amplifiers. T h e M R F 9 4 9 is well suited for low


    OCR Scan     		PDF MRF949T1 598E-16 548E-14 395E-16 00E-05 70E-13 60E-13 00E-11 00E-O9 MRF949

    NEC 41-A 002

    Abstract: NE333 NE33387 ne33353 NE33300 NE33353B NE33353E
    Text: NEC/ CALIFORNIA NEC SbE T> m 1,427414 0GQE3a2 IT I HNECC NE33300 NE33353E NE33353B NE33387 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • 450 mW LINEAR POWER OUTPUT at 2 GHz Com m on-Em ilter The NE333 series o f NPN silico n transistors Is designed for


    OCR Scan     		PDF b427M14 NE33300 NE33353E NE33353B NE33387 NE333 NEC 41-A 002 NE33387 ne33353

    transisto ot 306

    Abstract: 1147 x motorola
    Text: MOTOROLA O rder this docum ent by MRF2947/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Low Noise Transistors M R F 2947A T 1 ,T 2 M R F 2947R A T 1 ,T 2 M otorola’s MRF2947 device contains two high performance, low -noise NPN silicon bipolar transistors. This device has two 941 die housed in the high


    OCR Scan     		PDF MRF2947/D MRF2947 transisto ot 306 1147 x motorola

    NE32484C-S

    Abstract: GA 88 ne32584c NE32584C-SL
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET FEATURES_ NE32584C NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vos = 2 V, I d s = 10 mA • VERY LOW NOISE FIGURE: 0.45 dB Typical at 12 GHz • HIGH ASSOCIATED GAIN: 12.5 dB Typical at 12 GHz


    OCR Scan     		PDF NE32584C NE32584C IS12S21I 00Li545b NE32484C-S NE32484C-T1 NE32584C-SL 84C-SL b42752Â GA 88

    hep 154 silicon diode

    Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
    Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This


    OCR Scan     		PDF MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp

    A5 GNE mosfet

    Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA


    OCR Scan     		PDF 1PHX11136Q-14 A5 GNE mosfet jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor

    MRF545

    Abstract: MRFC545
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA M R F545 M RFC545 The RF Line PNP S ilicon High Frequency Transistors . . . d e s ig n e d f o r h ig h - f r e q u e n c y a n d m e d iu m a n d h ig h r e s o lu t io n c o lo r v id e o d is p la y m o n it o r s .


    OCR Scan     		PDF RFC545 MRF545 MRFC545

    9088 cb

    Abstract: 4576 0637
    Text: PRELIMINARY DATA SHEET NPN SILICON HIGH FREQUENCY TRANSISTOR NE663M04 FEATURES_ • HIGH GAIN BANDW IDTH: f t = 17 GHz • HIGH POWER GAIN: IS2 1 EI2 = 11 dB TYP at 2 GHz . LOW NOISE FIGURE: NF = 1 2 dB at 2 GHz • HIGH MAXIMUM STABLE GAIN: 15 dB @ 2 GHz


    OCR Scan     		PDF OT-343 NE663M04 HS025 E663M NE663M04 lS21l 24-Hour 9088 cb 4576 0637

    TH 2066.4

    Abstract: 13811
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32484A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V, Ids = 10 mA FEATURES • VERY LOW NOISE FIGURE: 0.6 dB typical at 12 GHz 24 • HIGH ASSOCIATED GAIN: 11 dB typical at 12 GHz m • Lg = 0.25 [im, W g = 200 [im


    OCR Scan     		PDF NE32484A NE32484Ais NE32484AS NE32484A-T1 NE32484A-SL. 24-Hour TH 2066.4 13811