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    Abstract: No abstract text available
    Text: PD - 9 .1 6 1 9 A International I R Rectifier 1RG4BC30K-S PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features c • High short circuit rating optimized for motor control, tsc =10ps, @ 360V VCE start , T j = 125°C,


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    WE VQE 23 F

    Abstract: WE VQE 23 E WE VQE 11 E 1RG4BC30K-S
    Text: International IöR Rectifier PD - 9.1619A 1RG4BC30K-S PRELIMINARY Short Circuit Rated _ UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features c • High short circuit rating optimized for motor control, tsc=10MS, @360V VCE start , T j = 125°C,


    OCR Scan     		PDF 1RG4BC30K-S generati08 WE VQE 23 F WE VQE 23 E WE VQE 11 E 1RG4BC30K-S

    1RG4BC30K

    Abstract: R-2-SC
    Text: International IOR Rectifier IGBTs v CfS Collector-to-Emitter Voltage 00 Part Number Max. V « on Collector-to-Emitter Voltage M *C Continuous Collector Current T r=2S°C TC=25°C (A) (A) Pd Max. Power Dissipation (W) Fax on Demand Number Case Outline Key


    OCR Scan     		PDF IRG4BC20K 1RG4BC30K-S O-220AB IRG4BC30K. O-247AC IRG4PC30K IRG4PC40K IRG4PC50K IRG4PH30K 1RG4BC30K R-2-SC