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    1RFK4J054

    Abstract: 27108 IRFK4HC50
    Text: International IÖR Rectifier NTE|¡NATiQtt»t f i t 'INt> HEXFET Power MOSFETs » IS iN W IlS A tY •d >D V BR DSS R Pulse Drain-to-Soune RDS(on) Continuous PD On-State Drain Current Drain Current Max. Thermal Max. Power Breakdown Port 100°C Vohage Resistance


    OCR Scan     		PDF IRFK6J450 IRFK4H054 1RFK4J054 IRFK6H054 IRFK6J054 IRFK4HC50 IRFK4JC50 IRFK6HC50 6JC50 IRFK4HE50 27108

    IRFK4J450

    Abstract: IRFK4H054 IRFK4H450 IRFK4J054
    Text: Bulletin E27107 International _ «ectmer 1RFK4H450,1RFK4J450 X Ö .K Isolated Base Power HEX-pak Assembly - Parallel Chip Configuration • • • • High Current Capability. UL recognised E78996. Electrically Isolated Base Plate. Easy Assembly into Equipment.


    OCR Scan     		PDF E27107 IRFK4H450 IRFK4J450 E78996. O-240 1RFK4H450JRFK4J450 IRFK4H054 IRFK4J054