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    1NS PULSE WIDTH CIRCUIT Search Results

    1NS PULSE WIDTH CIRCUIT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4162F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4206F Toshiba Electronic Devices & Storage Corporation Intelligent power device 500V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TLP2701 Toshiba Electronic Devices & Storage Corporation Photocoupler (photo-IC output), 5000 Vrms, 4pin SO6L Visit Toshiba Electronic Devices & Storage Corporation

    1NS PULSE WIDTH CIRCUIT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1nS pulse width circuit

    Abstract: 9a sot23 FMMT2369A FMMT2369 FMMT2369R FMMTA2369A FMMTA2369AR HIGH SPEED SWITCHING NPN SOT23 DSA003691
    Text: FMMT2369 FMMT2369A ISSUE 3 – AUGUST 1995 APPLICATIONS These devices are suitable for use in high speed, low current switching applications tON CIRCUIT t1 +10.6V 3V 3K3Ω CS < 4pF * -1.5V < 1ns tOFF CIRCUIT t1 +10.75V 3V 270Ω B SOT23 < 1ns Pulse width t1 =300ns


    Original     		PDF FMMT2369 FMMT2369A FMMT2369R FMMTA2369A FMMTA2369AR 300ns 1nS pulse width circuit 9a sot23 FMMT2369A FMMT2369 FMMT2369R HIGH SPEED SWITCHING NPN SOT23 DSA003691

    1nS pulse width circuit

    Abstract: MPS2369A High speed switching Transistor
    Text: MPS2369A t1 270Ω 3V MPS2369A ISSUE 2 – MARCH 94 FEATURES * 40 Volt VCEO * Very fast switching tON CIRCUIT +10.6V NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR C B 3K3Ω CS < 4pF * -1.5V < 1ns Pulse width t1 =300ns Duty cycle = 2% tOFF CIRCUIT t1


    Original     		PDF MPS2369A 300ns 100mA, 140KHz 1nS pulse width circuit MPS2369A High speed switching Transistor

    HYM7V65401BTRG

    Abstract: No abstract text available
    Text: 4Mx64 bits PC100 SDRAM Unbuffered DIMM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM7V65401B R-Series Preliminary DESCRIPTION The Hyundai HYM7V65401B R-Series are 4Mx64bits Synchronous DRAM Modules composed of four 4Mx16bit CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glassepoxy printed circuit board. Two 0.33uF and a 0.1uF decoupling capacitors per each SDRAM are mounted on the PCB.


    Original     		PDF 4Mx64 PC100 4Mx16 HYM7V65401B 4Mx64bits 4Mx16bit 400mil 54pin 168pin HYM7V65401BTRG

    Untitled

    Abstract: No abstract text available
    Text: 4Mx64 bits PC100 SDRAM SO DIMM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM7V65401B Q-Series Preliminary DESCRIPTION The Hyundai HYM7V65401B Q-Series are 4Mx64bits Synchronous DRAM Modules composed of four 4Mx16bit CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package and 2Kbit EEPROM in 8pin TSSOP package on a 144pin glassepoxy printed circuit board. Three 0.1uF decoupling capacitors per each SDRAM are mounted on the PCB.


    Original     		PDF 4Mx64 PC100 4Mx16 HYM7V65401B 4Mx64bits 4Mx16bit 400mil 54pin 144pin

    HYM7V65801

    Abstract: No abstract text available
    Text: 8Mx64 bits PC100 SDRAM SO DIMM based on 4Mx16 SDRAM with LVTTL, 4 banks & 4K Refresh HYM7V65801B Q-Series Preliminary DESCRIPTION The Hyundai HYM7V65801B Q-Series are 8Mx64bits Synchronous DRAM Modules composed of eight 4Mx16bit CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package and 2Kbit EEPROM in 8pin TSSOP package on a 144pin glassepoxy printed circuit board. Three 0.1uF decoupling capacitors per each SDRAM are mounted on the PCB.


    Original     		PDF 8Mx64 PC100 4Mx16 HYM7V65801B 8Mx64bits 4Mx16bit 400mil 54pin 144pin HYM7V65801

    hy57v168010D

    Abstract: 4MX72 BIT SDRAM hy57v168010
    Text: HYM7V75A400D F-Series Unbuffered 4Mx72 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V75A400D is high speed 3.3Volt CMOS Synchronous DRAM module consisting of eighteen 2Mx8 bit Synchronous DRAMs in 44-pin TSOPII and one 8-pin TSSOP 2K bit EEPROM on a 168-pin glassepoxy circuit board. One 0.33µF and one 0.1µF decoupling capacitors are mounted for each SDRAM.


    Original     		PDF HYM7V75A400D 4Mx72 44-pin 168-pin hy57v168010D 4MX72 BIT SDRAM hy57v168010

    hy57v16801

    Abstract: No abstract text available
    Text: HYM7V75A400C F-Series Unbuffered 4Mx72 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V75A400C is high speed 3.3Volt CMOS Synchronous DRAM module consisting of eighteen 2Mx8 bit Synchronous DRAMs in 44-pin TSOPII and one 8-pin TSSOP 2K bit EEPROM on a 168-pin glassepoxy circuit board. One 0.33µF and one 0.1µF decoupling capacitors are mounted for each SDRAM.


    Original     		PDF HYM7V75A400C 4Mx72 44-pin 168-pin hy57v16801

    HYM7V65801BTFG-10S

    Abstract: No abstract text available
    Text: 8Mx64 bits PC100 SDRAM Unbuffered DIMM based on 8Mx8 SDRAM with LVTTL, 4 banks & 4K Refresh HYM7V65801B F-Series Preliminary DESCRIPTION The Hyundai HYM7V65801B F-Series are 8Mx64bits Synchronous DRAM Modules composed of eight 8Mx8bit CMOS Synchronous DRAMs in 400mil 54pin TSOP-II package, one 2Kbit EEPROM in 8pin TSSOP package on a 168pin glassepoxy printed circuit board. A 0.33uF and a 0.1uF decoupling capacitors per each SDRAM are mounted on the PCB.


    Original     		PDF 8Mx64 PC100 HYM7V65801B 8Mx64bits 400mil 54pin 168pin 64Mbytes HYM7V65801BTFG-10S

    SP720

    Abstract: Schaffner 5000 AN9612 150pf 6kv electro discharge machining IC121 SP721 SP723 VSP720 J1113
    Text: Harris Semiconductor No. AN9612.1 Harris Intelligent Power April 1996 IEC 1000-4-2 ESD Immunity and Transient Current Capability for the Harris SP720, SP721 and SP723 Electronic Protection Array Circuits Author: Wayne Austin The SP723 capability surpasses those of the SP720 and


    Original     		PDF AN9612 SP720, SP721 SP723 SP720 Schaffner 5000 150pf 6kv electro discharge machining IC121 VSP720 J1113

    VSP720

    Abstract: HIGH VOLTAGE SCR 6kv SP720
    Text: Harris Semiconductor No. AN9612.1 Harris Suppression Products April 1996 IEC 1000-4-2 ESD Immunity and Transient Current Capability for the Harris SP720, SP721 and SP723 Electronic Protection Array Circuits Author: Wayne Austin The SP720, SP721 and SP723 are protection ICs with an


    Original     		PDF AN9612 SP720, SP721 SP723 SP720 VSP720 HIGH VOLTAGE SCR 6kv

    hym7v64400btfg

    Abstract: hym7v64400
    Text: HYM7V64400B F-Series Unbuffered 4Mx64 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V64400B is high speed 3.3Volt synchronous dynamic RAM module consisting of sixteen 2Mx8 bit Synchronous DRAMs in TSOPII and 8-pin TSSOP 2K bit EEPROM on a 168-pin glass-epoxy circuit


    Original     		PDF HYM7V64400B 4Mx64 168-pin 168Pin hym7v64400btfg hym7v64400

    hym7v64400btfg

    Abstract: No abstract text available
    Text: HYM7V64400B F-Series Unbuffered 4Mx64 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V64400B is high speed 3.3Volt synchronous dynamic RAM module consisting of sixteen 2Mx8 bit Synchronous DRAMs in TSOPII and 8-pin TSSOP 2K bit EEPROM on a 168-pin glass-epoxy circuit


    Original     		PDF HYM7V64400B 4Mx64 168-pin 168Pin hym7v64400btfg

    hym7v64200

    Abstract: No abstract text available
    Text: HYM7V64200B F-Series Unbuffered 2Mx64 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V64200B is high speed 3.3Volt synchronous dynamic RAM module consisting of eight 2Mx8 bit Synchronous DRAMs in TSOPII and 8-pin TSSOP 2K bit EEPROM on a 168-pin glass-epoxy circuit


    Original     		PDF HYM7V64200B 2Mx64 168-pin 168Pin hym7v64200

    hym7v64400

    Abstract: No abstract text available
    Text: HYM7V64400B K-Series Unbuffered 4Mx64 bit SDRAM MODULE based on 4Mx4 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V64400B is high speed 3.3Volt synchronous dynamic RAM module consisting of sixteen 4Mx4 bit Synchronous DRAMs in TSOPII and 8-pin TSSOP 2K bit EEPROM on a 168-pin glass-epoxy circuit


    Original     		PDF HYM7V64400B 4Mx64 168-pin 168Pin hym7v64400

    MSM photodetector

    Abstract: GaAs MSM Ultrafast Photodetectors GMbh G4176 G4176-01 G7096 G7096-01 LPRD1022E01
    Text: ULTRAFAST MSM PHOTODETECTORS G4176 SERIES GaAs , G7096 SERIES (InGaAs) CONNECTION EXAMPLES G4176 G4176-01 G7096 G7096-01 PRELIMINARY DATA ULTRAFAST MSM PHOTODETECTORS G4176 SERIES (GaAs) G7096 SERIES (InGaAs) Output Optical Input Electric Output G4176 (G7096)


    Original     		PDF G4176 G7096 G4176 G7096 G4176-01 G7096-01 G7096) MSM photodetector GaAs MSM Ultrafast Photodetectors GMbh G4176-01 G7096-01 LPRD1022E01

    pc133 sdram

    Abstract: HYM4V33100DTYG-75
    Text: 1Mx32 bits PC133 SDRAM AIMM based on 1Mx16 SDRAM with LVTTL, 2 banks & 4K Refresh HYM4V33100DTYG Series DESCRIPTION The Hynix HYM4V33100DTYG Series are 1Mx16bits Synchronous DRAM Modules. The modules are composed of two 1Mx16bits CMOS Synchronous DRAMs in 400mil 50pin TSOP-II package, on a 132pin glass-epoxy printed circuit board. Two 0.22uF and one


    Original     		PDF 1Mx32 PC133 1Mx16 HYM4V33100DTYG 1Mx16bits 1Mx16bits 400mil 50pin 132pin pc133 sdram HYM4V33100DTYG-75

    HY57V168

    Abstract: No abstract text available
    Text: »fl Y U M 0 A I * H YM 7V 75A 400C F-SER IES Unbuffered 4Mx72 bit SDRAM MODULE based on 2Mx8 SDRAM, LVTTL, 4K-Refresh DESCRIPTION The HYM7V75A400C is high speed 3.3Volt CMOS Synchronous DRAM module consisting of eighteen 2Mx8 bit Synchronous DRAMs in 44-pin TSOPII and one 8-pin TSSO P 2K bit EEPROM on a 168-pin glassepoxy circuit board. One 0.33fiF and one 0.1 nF decoupling capacitors are mounted for each SDRAM.


    OCR Scan     		PDF 4Mx72 HYM7V75A400C 44-pin 168-pin 33fiF HY57V168

    "Digital Delay Line"

    Abstract: 100NS 25NS 40NS 55NS 0451008
    Text: BEL FUSE INC ^ ¿ Ë | 1351453 0000442 T | T-V7-/7 /defining a degree of excellence DIGITAL DELAY LINE SE R IE S 0451 ECL 10K PROGRAMMABLE LOGIC DELAY MODULE 4 BIT TECHNICAL INFORMATION TEST CONDITIONS Logic 1 — 0.9 Volts Logic O -1 .8 Volts Rise Time 20% to 8 0 % 2.0 Nsec


    OCR Scan     		PDF Characterist40-04 100NS 115NS 130NS 145NS 160NS 432-0463/TWX "Digital Delay Line" 25NS 40NS 55NS 0451008

    Untitled

    Abstract: No abstract text available
    Text: iS C S I/d e f in in g a degree of excellence DIGITAL DELAY LINE SERIES 0449 TTLPROGRAMMABLE LOGIC DELAY MODULE 4 BIT TECHNICAL INFORMATION TEST CONDITIONS Pulse Voltage Rise Time Pulse Width 3.2 Vblts 3.0 Nsec 10%-90% 1.5 x Maximum Delay Pulse Period 5 x Pulse Width


    OCR Scan     		PDF Vcc24 432-0463/TWX

    Untitled

    Abstract: No abstract text available
    Text: b d / d e f i n i n g a degree of excellence DIGITAL DELAY LINE SERIES 0449 TTLPROGRAMMABLE LOGIC DELAY MODULE 4 BIT TECHNICAL INFORMATION TEST CONDITIONS Pulse Voltage 3.2 Volts Rise Time 3.0 Nsec 10%-90°/o Pulse Width 1.5x Maximum Delay Pulse Period 5 x Pulse Width


    OCR Scan     		PDF Operat65-04 105NS 120NS 135NS 150NS 165NS 432-0463/TWX 710-730-5301/FAX

    60NS

    Abstract: 0449-0075-04
    Text: Ë C ï l / defining a degree of excellence DIGITAL DELAY LINE SERIES 0449 TTLPROGRAMMABLE LOGIC DELAY MODULE 4 BIT TECHNICAL INFORMATION TEST CONDITIONS Pulse Voltage 3.2 Volts 3.0 Nsec 10%-90°/o Rise Time 1.5 x Maximum Pulse Width Delay Pulse Period


    OCR Scan     		PDF 105NS 120NS 135NS 150NS 165NS 432-0463/TWX 710-730-5301/FAX 60NS 0449-0075-04

    sony 448

    Abstract: CX20116 CX2011
    Text: CX20116PCB/CXA1066PCB SONY. 8bit, 1 1 0 M H z A / D Evaluation Board CX20116 PCB/CXA1066PCB is the evaluation printed circuit board for 8 bit high speed A/D converter CX20116/CXA1066K. On this one board, A/D, driver, standard voltage source, latches and ECL line


    OCR Scan     		PDF CX20116PCB/CXA1066PCB CX20116 PCB/CXA1066PCB CX20116/CXA1066K. CXA1066 2SC2408 2N5836 sony 448 CX2011

    Untitled

    Abstract: No abstract text available
    Text: bel/defining a degree of excellence DIGITAL DELAY LINE SERIES 0453 ECL 10KH PROGRAMMABLE LOGIC DELAY MODULE 4 BIT TECHNICAL INFORMATION TEST CONDITIONS Logic 1 Logic 0 Rise Time 20% to 80% Pulse Width Pulse Period Supply Maltage, Vee Output Terminations -0 .9 Volts


    OCR Scan     		PDF Input0453-0100-04 100NS 125NS 140NS 155NS 432-0463/TWX 710-730-5301/FAX

    Untitled

    Abstract: No abstract text available
    Text: bel/ defining a degree of excellence DIGITAL DELAY LINE SERIES 0453 ECL 10KH PROGRAMMABLE LOGIC DELAY MODULE 4 BIT TECHNICAL INFORMATION TEST CONDITIONS Logic 1 Logic 0 Rise Time 20% to 80% Pulse Width Pulse Period Supply Voltage, Vee Output Terminations -0 .9 Volts


    OCR Scan     		PDF 100NS 125NS 140NS 155NS 432-0463/TW 710-730-5301/FAX