1N914B
Abstract: No abstract text available
Text: 1N914B Signal Diode. Max Breakdown Voltage BV = 75V IR = 5.0uA - BV = 100V(IR. Page 1 of 1 Enter Your Part # Home Part Number: 1N914B Online Store 1N914B Diodes Signal Diode. Max Breakdown Voltage BV = 75V(IR = Transistors 5.0uA) - BV = 100V(IR = 100uA).
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1N914B
1N914B
100uA)
DO-35
com/1n914b
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IN914B
Abstract: IN914B diode 1N4148 1N914b diode 1N4148 ROHM 1n4148 trr JEDEC 1N4148 1N4150 1N4448 1N914B
Text: 1N4148 / 1N4150 / 1N4448 / 1N914B Diodes Switching diode 1N4148 / 1N4150 / 1N4448 / 1N914B ∗This product is available only outside of Japan. !External dimensions Units : mm !Applications High-speed switching !Features 1) Glass sealed envelope. (GSD) 2) High speed.
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1N4148
1N4150
1N4448
1N914B
DO-35
1N4148
IN914B
IN914B diode
1N914b diode
1N4148 ROHM
1n4148 trr
JEDEC 1N4148
1N914B
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1N914B
Abstract: No abstract text available
Text: RECTRON SEMICONDUCTOR 1N914B TECHNICAL SPECIFICATION 1N914B SIGNAL DIODE Absolute Maximum Ratings Ta=25°C Items Symbol Ratings Unit Reverse Voltage VR 75 V Reverse Recovery trr 4 ns Time Power Dissipation P 500 mW 3.33mW/°C (25°C) Forward Current IF 300
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1N914B
1N914B
DO-35)
DO-35
100uA
100mA
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Untitled
Abstract: No abstract text available
Text: WILLAS 1N914B 1N914B SIGNAL DIODE FEATURES S Dimensions DO-35 .01 * Extremely Low VF * Majority carrier conduction 1.02(26.0) MIN. Items Package Case Lead/Finish Chip Materials DO-35 Hermetically sealed glass Double stud/Solder Plating Glass Passivated .043 (1.1)
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1N914B
DO-35
1N914B
DO-35)
OD-323
100mA
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diode 1N914B
Abstract: 1N914B
Text: Formosa MS Switching Diode 1N914B List List. 1 Package outline. 2 Features. 2
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1N914B
MIL-STD-750D
METHOD-1051
125oC
METHOD-1056
METHOD-4066-2
1000hrs.
diode 1N914B
1N914B
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1N914
Abstract: 1N914A 1N914B MAM246
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 1N914; 1N914A; 1N914B High-speed diodes Product specification Supersedes data of 1999 May 26 2003 Jun 06 Philips Semiconductors Product specification High-speed diodes 1N914; 1N914A; 1N914B FEATURES DESCRIPTION • Hermetically sealed leaded glass
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M3D176
1N914;
1N914A;
1N914B
DO-35)
1N914,
1N914A
1N914
1N914B
MAM246
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1N914B
Abstract: No abstract text available
Text: RECTRON SEMICONDUCTOR 1N914B TECHNICAL SPECIFICATION 1N914B SIGNAL DIODE Absolute Maximum Ratings Ta=25°C Items Symbol Ratings Unit Reverse Voltage VR 75 V Reverse Recovery trr 4 ns Time Power Dissipation P 500 mW 3.33mW/°C (25°C) Forward Current IF 300
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1N914B
1N914B
DO-35)
DO-35
100uA
100mA
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Untitled
Abstract: No abstract text available
Text: Formosa MS Switching Diode 1N914B List List. 1 Package outline. 2 Features. 2
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1N914B
MIL-STD-750D
METHOD-1051
METHOD-1056
METHOD-4066-2
METHOD-1021
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1N916B
Abstract: t 4148 diode
Text: Symbol TA=25 C unless otherwise noted Parameter VR Breakdown Voltage VF Forward Voltage IR Reverse Leakage CT Total Capacitance 1N916A/B/4448 1N914A/B/4148 trr Test Conditions 1N914B/4448 1N916B 1N914/916/4148 1N914A/916A 1N916B 1N914B/4448 Reverse Recovery Time
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O-35FDLL914Be
1N916A/B/4448
1N914A/B/4148
1N914B/4448
1N916B
1N914/916/4148
1N914A/916A
100mA
1N916B
t 4148 diode
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Untitled
Abstract: No abstract text available
Text: 1N914, 1N914A, 1N914B Silicon Rectifier Diode Ultra Fast Switch Absolute Maximum Ratings: TA = +25C, Note 1 unless otherwise specified Maximum Repetitive Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
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1N914,
1N914A,
1N914B
200mA
300mA
400mA
1N914A
100mA
1N914
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diode din 4148
Abstract: vishay 1N4148 1N4148.1N4448 1N4148 1N4448 1N914 1N914B
Text: 1N4148.1N4448 Vishay Telefunken Silicon Epitaxial Planar Diodes Features D Electrically equivalent diodes: 1N4148 – 1N914 1N4448 – 1N914B Applications 94 9367 Extreme fast switches Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage
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1N4148
1N4448
1N4148
1N914
1N914B
D-74025
01-Apr-99
diode din 4148
vishay 1N4148
1N4148.1N4448
1N4448
1N914
1N914B
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1N914
Abstract: 1N914B
Text: Home | Profile | Designer Kits | Products | Applications | Catalog | Contact Us | Event Calendar | Terms & Conditions Product Catalog > Diodes > Switching Diodes > Part Number 1N914B product family SWITCHING DIODES package type DO-35 VRM PRV 100V Ifsm 500mA
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1N914B
DO-35
500mA
10K/Box,
100K/Ctn
10K/Reel,
50K/Ctn;
1N914
J-STD-020C
1N914B
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1N4148 telefunken
Abstract: No abstract text available
Text: 1N4148.1N4448 Vishay Telefunken Fast Switching Diodes Features D Silicon Epitaxial Planar Diodes D Electrically equivalent diodes: 1N4148 – 1N914 1N4448 – 1N914B Applications 94 9367 Extreme fast switches Order Instruction Type Type Differentiation 1N4148
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1N4148
1N4448
1N4148
1N914
1N914B
1N4448
100mA
1N4148 telefunken
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Untitled
Abstract: No abstract text available
Text: 1N4148.1N4448 Vishay Telefunken Fast Switching Diodes Features D Silicon Epitaxial Planar Diodes D Electrically equivalent diodes: 1N4148 – 1N914 1N4448 – 1N914B Applications 94 9367 Extreme fast switches Order Instruction Type Type Differentiation 1N4148
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1N4148
1N4448
1N4148
1N914
1N914B
100mA
1N4148â
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1N4148.1N4448
Abstract: 1N4148.TR 1N4148TA vishay 1N4148.1n4448 fast recovery diode 54
Text: 1N4148.1N4448 VISHAY Vishay Semiconductors Fast Switching Diodes Features • Silicon Epitaxial Planar Diodes • Electrically equivalent diodes: 1N4148 - 1N914 1N4448 - 1N914B Applications Extreme fast switches 94 9367 Mechanical Data Case: DO-35 Glass Case
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1N4148
1N4448
1N914
1N4448
1N914B
DO-35
1N4148-TAP
1N4148.1N4448
1N4148.TR
1N4148TA
vishay 1N4148.1n4448
fast recovery diode 54
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1N4148.1N4448
Abstract: din 4148 1N4148 1N4448 1N914 1N914B
Text: 1N4148.1N4448 Silicon Epitaxial Planar Diodes Features D Electrically equivalent diodes: 1N4148 – 1N914 1N4448 – 1N914B Applications Extreme fast switches 94 9367 Absolute Maximum Ratings Tj = 25_C Parameter Repetitive peak reverse voltage Reverse voltage
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1N4148
1N4448
1N4148
1N914
1N914B
D-74025
12-Dec-94
1N4148.1N4448
din 4148
1N4448
1N914
1N914B
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1N4148.1N4448
Abstract: 1N4148.TR 1N4148TA
Text: 1N4148.1N4448 VISHAY Vishay Semiconductors Fast Switching Diodes Features • Silicon Epitaxial Planar Diodes • Electrically equivalent diodes: 1N4148 - 1N914 1N4448 - 1N914B Applications Extreme fast switches 94 9367 Mechanical Data Case: DO-35 Glass Case
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1N4148
1N4448
1N914
1N4448
1N914B
DO-35
1N4148-TAP
1N4148.1N4448
1N4148.TR
1N4148TA
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1N914
Abstract: 1n914 equivalent 1N914A 1N914B
Text: 1N914, 1N914A, 1N914B FAST SWITCHING DIODES Features • Fast Switching Speed • High Reliability • High Conductance • For General Purpose Switching Applications Mechanical Data • Terminals: Solderable per MIL-STD-202, • Method 208 • Marking: Type Number
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1N914,
1N914A,
1N914B
MIL-STD-202,
1N914
1N914A
1N914
1n914 equivalent
1N914B
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1N4148
Abstract: Diode Equivalent 1n4148 1N4148 package SO free 1N4148 1N4148.TR 1N4148-TAP 1N4148-TR 1N4448 1N4448-TAP 1N914
Text: 1N4148 / 1N4448 Vishay Semiconductors Small Signal Fast Switching Diodes Features • Silicon Epitaxial Planar Diodes • Electrically equivalent diodes: 1N4148 e2 1N914 1N4448 - 1N914B • Lead Pb -free component • Component in accordance to RoHS 2002/95/EC
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1N4148
1N4448
1N914
1N4448
1N914B
2002/95/EC
2002/96/EC
DO-35
1N4148
Diode Equivalent 1n4148
1N4148 package SO
free 1N4148
1N4148.TR
1N4148-TAP
1N4148-TR
1N4448-TAP
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1N4148.1N4448
Abstract: J 1N4448 equivalent
Text: Temic 1N4148.1N4448 Semiconductors Silicon Epitaxial Planar Diodes Features • Electrically equivalent diodes 1N4148 - 1N914 1N4448 - 1N914B Applications Extreme fast switches Absolute Maximum Ratings Tj = 25 °C tp=ljAs o Junction temperature Storage temperature range
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1N4148
1N4448
1N914
1N4448
1N914B
D-74025
12-Dec-94
1N4148.1N4448
J 1N4448 equivalent
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1N914
Abstract: 1N914B marking 10P 1N914A
Text: 1N914 / 1N914A / 1N914B FAST SWITCHING DIODE Features_ • • • • Fast Switching Speed High Reliability High Conductance For General Purpose Switching Applications B A A T C D Mechanical Data_ • • • •
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1N914
1N914A
1N914B
DO-35,
MIL-STD-202,
1N914
1N914A/B
1N914,
1N914B
marking 10P
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1N4148.1N4448
Abstract: 1N4148 telefunken Diode Equivalent 1n4148 L45C
Text: Tem ic 1N4148.1N4448 Semiconductors Silicon Epitaxial Planar Diodes Features • Electrically equivalent diodes 1N4148- 1N914 1N4448 - 1N914B Applications Extreme fast switches 94 9367 Absolute Maximum Ratings Tj = 25 °C Parameter Repetitive peak reverse voltage
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1N4148
1N4448
1N4148-
1N914
1N4448
1N914B
a9169
12-Dec-94
1N4148.1N4448
1N4148 telefunken
Diode Equivalent 1n4148
L45C
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PNP Transistor 2N2222 equivalent
Abstract: DIODE 1N3605 2N2907 equivalent equivalent transistor 2N2222 2n2222 npn transistor general purpose 1N3605 equivalent 2N2222 npn small signal current gain 2N2222 chip DIODE 1N9148 transistor npn high speed switching
Text: SPECIAL SILICON PRODUCTS SILICON SIGNAL DIODE CHIPS Equivalent JEDEC Number GE Type 1N914 CHIP DRAWINGS Description Chip Dwg. 35.88 Designed for high-speed switching and general purpose applications. 1N914A Specification Sheet No. 1 35.90 1N914B M46P-X510
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1N914
1N914A
1N914B
M46P-X510
1N3064
M46P-X507
1N3600
1N3605
M46P-X516
1N4150
PNP Transistor 2N2222 equivalent
DIODE 1N3605
2N2907 equivalent
equivalent transistor 2N2222
2n2222 npn transistor general purpose
1N3605 equivalent
2N2222 npn small signal current gain
2N2222 chip
DIODE 1N9148
transistor npn high speed switching
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1N414 diode
Abstract: 1N414 1N4148.1N4448 J 1N4448 equivalent
Text: 1N4148.1N4448 VISHAY _ ▼ Vishay Telefunken Silicon Epitaxial Planar Diodes Features • Electrically equivalent diodes: 1N414 8 - 1 N914 1 N 44 48- 1N914B Applications Extreme fast switches Absolute Maximum Ratings T¡ = 25°C Parameter
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1N4148
1N4448
1N414
1N914B
01-Apr-99
1N414 diode
1N4148.1N4448
J 1N4448 equivalent
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