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    1N914 SOT 23 Search Results

    1N914 SOT 23 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    1N914 SOT 23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. High Voltage Transistor FEATURE LMBT5401LT1G ƽPb-Free package is available. 3 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping 1 LMBT5401LT1G 2L 3000/Tape&Reel LMBT5401LT3G 2L 10000/Tape&Reel 2 SOT– 23 MAXIMUM RATINGS


    Original     		PDF LMBT5401LT1G 3000/Tape LMBT5401LT3G 10000/Tape

    semtech 1N4148 SMD

    Abstract: 1n4148 micromelf melf smd 1n914 1N4148 SMD PACKAGE micromelf 1n914 micromelf 1N4148 SOT-23 1N914 smd microMELF dimensions 1N4148
    Text: MCL914, MCL914A, MCL914B SILICON EPITAXIAL PLANAR DIODES LS-31 Features • Saving space • Hermetic sealed parts • Fits onto SOD 323 / SOT 23 footprints • Electrical data identical with the device 1N4148 • Micro Melf package Applications • Extreme fast switches


    Original     		PDF MCL914, MCL914A, MCL914B LS-31 1N4148 MCL914 MCL914A 178mm 12-mm semtech 1N4148 SMD 1n4148 micromelf melf smd 1n914 1N4148 SMD PACKAGE micromelf 1n914 micromelf 1N4148 SOT-23 1N914 smd microMELF dimensions 1N4148

    semtech 1N4148 SMD

    Abstract: 1n4148 micromelf 1N4148 SOT-23 1N914 smd 1N4148 SMD PACKAGE micromelf 1N4148 1N914 1N914A 1N914B
    Text: MCL914, MCL914A, MCL914B SILICON EPITAXIAL PLANAR DIODES LS-31 Features • Saving space • Hermetic sealed parts • Fits onto SOD 323 / SOT 23 footprints • Electrical data identical with the device 1N4148 • Micro Melf package Applications • Extreme fast switches


    Original     		PDF MCL914, MCL914A, MCL914B LS-31 1N4148 MCL914 MCL914A MCL90 178mm semtech 1N4148 SMD 1n4148 micromelf 1N4148 SOT-23 1N914 smd 1N4148 SMD PACKAGE micromelf 1N4148 1N914 1N914A 1N914B

    1n4148 micromelf

    Abstract: melf smd 1n914 1N4148 SMD PACKAGE semtech 1N4148 SMD micromelf 1N4148 SOT-23 1N914 smd 1N914 SOT-23 1N4148 1N914
    Text: MCL914, MCL914A, MCL914B SILICON EPITAXIAL PLANAR DIODES LS-31 Features • Saving space • Hermetic sealed parts • Fits onto SOD 323 / SOT 23 footprints • Electrical data identical with the device 1N4148 • Micro Melf package Applications • Extreme fast switches


    Original     		PDF MCL914, MCL914A, MCL914B LS-31 1N4148 MCL914 MCL914A MCL960 178mm 1n4148 micromelf melf smd 1n914 1N4148 SMD PACKAGE semtech 1N4148 SMD micromelf 1N4148 SOT-23 1N914 smd 1N914 SOT-23 1N4148 1N914

    1N914 SOT-23

    Abstract: MMBT550LT1
    Text: MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 is a Preferred Device High Voltage Transistors NPN Silicon http://onsemi.com Features • Pb−Free Package is Available COLLECTOR 3 MAXIMUM RATINGS Symbol 5550 5551 Unit Collector −Emitter Voltage Rating VCEO 140 160


    Original     		PDF MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 OT-23-3 1N914 SOT-23 MMBT550LT1

    MMBT5401LT

    Abstract: 1N914 SOT-23
    Text: ON Semiconductort High Voltage Transistor MMBT5401LT1 PNP Silicon ON Semiconductor Preferred Device 3 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector −Emitter Voltage VCEO −150 Vdc Collector −Base Voltage VCBO −160 Vdc Emitter −Base Voltage


    Original     		PDF MMBT5401LT1 236AF) MMBT5401LT 1N914 SOT-23

    Untitled

    Abstract: No abstract text available
    Text: High Voltage Transistor PNP Silicon MMBT5401LT1 3 COLLECTOR 3 1 BASE 1 2 2 EMITTER CASE 318–08, STYLE 6 SOT– 23 TO–236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO Collector–Base Voltage Emitter–Base Voltage V CBO


    Original     		PDF MMBT5401LT1 236AB)

    843 SOT-23

    Abstract: MMBT2222ALT1G
    Text: MMBT2222LT1, MMBT2222ALT1 MMBT2222ALT1 is a Preferred Device General Purpose Transistors NPN Silicon http://onsemi.com Features COLLECTOR 3 • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 1 BASE MAXIMUM RATINGS Rating


    Original     		PDF MMBT2222LT1, MMBT2222ALT1 MMBT2222ALT1 MMBT2222LT1 843 SOT-23 MMBT2222ALT1G

    Untitled

    Abstract: No abstract text available
    Text: MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 is a Preferred Device High Voltage Transistors NPN Silicon http://onsemi.com Features • Pb−Free Package is Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol 5550 5551 Unit Collector −Emitter Voltage VCEO 140 160


    Original     		PDF MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 MMBT5550LT1/D

    1N914

    Abstract: MMBT5550 MMBT5550LT1 MMBT5551 MMBT5551LT1 MMBT5551LT1G MMBT5551LT3 5551 SOT-23
    Text: MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 is a Preferred Device High Voltage Transistors NPN Silicon http://onsemi.com Features • Pb−Free Package is Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol 5550 5551 Unit Collector −Emitter Voltage VCEO 140 160


    Original     		PDF MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 MMBT5550LT1/D 1N914 MMBT5550 MMBT5550LT1 MMBT5551 MMBT5551LT1G MMBT5551LT3 5551 SOT-23

    Untitled

    Abstract: No abstract text available
    Text: High Voltage Transistor PNP Silicon MMBT5401LT1 3 COLLECTOR 3 1 BASE 1 2 2 EMITTER CASE 318–08, STYLE 6 SOT– 23 TO–236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO Collector–Base Voltage Emitter–Base Voltage V CBO


    Original     		PDF MMBT5401LT1 236AB)

    m1924

    Abstract: 1N914 MMBT5401LT1 M1934
    Text: LESHAN RADIO COMPANY, LTD. High Voltage Transistor PNP Silicon MMBT5401LT1 3 COLLECTOR 3 1 BASE 1 2 2 EMITTER CASE 318–08, STYLE 6 SOT– 23 TO–236AB MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO Collector–Base Voltage


    Original     		PDF MMBT5401LT1 236AB) m1924 1N914 MMBT5401LT1 M1934

    MMBT2222ALT1

    Abstract: No abstract text available
    Text: MMBT2222LT1, MMBT2222ALT1 MMBT2222ALT1 is a Preferred Device General Purpose Transistors NPN Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Collector–Emitter Voltage MMBT2222LT1 MMBT2222ALT1 VCEO Collector–Base Voltage MMBT2222LT1 MMBT2222ALT1


    Original     		PDF MMBT2222LT1, MMBT2222ALT1 MMBT2222ALT1 MMBT2222LT1

    1N914 SOT-23

    Abstract: ic 5550 adc . Circuit Diagram using this IC sot-23 Marking M1F MMBT5550 MMBT5550LT1 MMBT5550LT1G MMBT5551LT1 MMBT5551LT1G MMBT5551LT3 MMBT5551LT3G
    Text: MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 is a Preferred Device High Voltage Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol 5550 5551 Unit Collector −Emitter Voltage VCEO 140 160


    Original     		PDF MMBT5550LT1, MMBT5551LT1 MMBT5551LT1 MMBT5550LT1/D 1N914 SOT-23 ic 5550 adc . Circuit Diagram using this IC sot-23 Marking M1F MMBT5550 MMBT5550LT1 MMBT5550LT1G MMBT5551LT1G MMBT5551LT3 MMBT5551LT3G

    sot-23 Marking M1F

    Abstract: MMBT5551LT1G MMBT5550 MMBT5550LT1 MMBT5550LT1G MMBT5551 MMBT5551LT1 MMBT5551LT3 MMBT5551LT3G RB SOT23-3
    Text: MMBT5550LT1, MMBT5551LT1 Preferred Device High Voltage Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage Value VCEO MMBT5550 MMBT5551 Collector −Base Voltage


    Original     		PDF MMBT5550LT1, MMBT5551LT1 MMBT5550 MMBT5551 MMBT5550LT1/D sot-23 Marking M1F MMBT5551LT1G MMBT5550 MMBT5550LT1 MMBT5550LT1G MMBT5551 MMBT5551LT1 MMBT5551LT3 MMBT5551LT3G RB SOT23-3

    MMBT5401LT1G

    Abstract: 1N914 MMBT5401LT1 MMBT5401LT3 MMBT5401LT3G sot-23-3 marking code PO
    Text: MMBT5401LT1 Preferred Device High Voltage Transistor PNP Silicon Features • Pb−Free Packages are Available http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −150 Vdc Collector −Base Voltage VCBO −160 Vdc


    Original     		PDF MMBT5401LT1 MMBT5401LT1/D MMBT5401LT1G 1N914 MMBT5401LT1 MMBT5401LT3 MMBT5401LT3G sot-23-3 marking code PO

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. High Voltage Transistor LMBT5401LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 2 SOT– 23 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO Collector–Base Voltage Emitter–Base Voltage V CBO V EBO – 150 – 160


    Original     		PDF LMBT5401LT1 OT-23 LMBT5401LT1-5/5

    M1B marking

    Abstract: transistor 2222a data sheet LMBT2222ALT1G 1N914 LMBT2222ALT1 LMBT2222LT1 LMBT2222LT1G
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LMBT2222LT1 LMBT2222ALT1 NPN Silicon • Pb−Free Package May be Available. The G−Suffix Denotes a 3 Pb−Free Lead Finish 1 MAXIMUM RATINGS Rating 2 Symbol 2222 2222A Unit Collector–Emitter Voltage


    Original     		PDF LMBT2222LT1 LMBT2222ALT1 LMBT2222LT1 M1B marking transistor 2222a data sheet LMBT2222ALT1G 1N914 LMBT2222ALT1 LMBT2222LT1G

    1N914

    Abstract: MMBT5550 MMBT5550LT1 MMBT5551 MMBT5551LT1
    Text: ON Semiconductort MMBT5550LT1 MMBT5551LT1 High Voltage Transistors NPN Silicon MMBT5551LT1 is a Preferred Device 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 140 Vdc Collector–Base Voltage VCBO 160 Vdc Emitter–Base Voltage


    Original     		PDF MMBT5550LT1 MMBT5551LT1 MMBT5551LT1 r14525 MMBT5550LT1/D 1N914 MMBT5550 MMBT5550LT1 MMBT5551

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors LMBT2222LT1 LMBT2222ALT1 NPN Silicon • Pb−Free Package May be Available. The G−Suffix Denotes a 3 Pb−Free Lead Finish 1 MAXIMUM RATINGS Rating 2 Symbol 2222 2222A Unit Collector–Emitter Voltage


    Original     		PDF LMBT2222LT1 LMBT2222ALT1 LMBT2222LT1

    IC 723 pin out diagram

    Abstract: transistor package SOT-723 1N914 MMBT5551M3T5G
    Text: MMBT5551M3T5G NPN High Voltage Transistor The MMBT5551M3T5G device is a spin−off of our popular SOT−23 three−leaded device. It is designed for general purpose high voltage applications and is housed in the SOT−723 surface mount package. This device is ideal for low−power surface mount


    Original     		PDF MMBT5551M3T5G MMBT5551M3T5G OT-23 OT-723 MMBT5551M3/D IC 723 pin out diagram transistor package SOT-723 1N914

    1N914

    Abstract: MMBT5550 MMBT5550LT1 MMBT5551 MMBT5551LT1
    Text: MOTOROLA Order this document by MMBT5550LT1/D SEMICONDUCTOR TECHNICAL DATA High Voltage Transistors MMBT5550LT1 MMBT5551LT1* COLLECTOR 3 NPN Silicon *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage


    Original     		PDF MMBT5550LT1/D MMBT5550LT1 MMBT5551LT1* 236AB) MMBT5550LT1/D* 1N914 MMBT5550 MMBT5550LT1 MMBT5551 MMBT5551LT1

    1N457 equivalent

    Abstract: 1n916 equivalent 1n914 sot 23 1n914 equivalent 1N3070 equivalent 1N916 1N3064 FDH444 1N3070 fdh300
    Text: Surface Mount Diodes General Purpose & Specialty Surface Mount Diodes continued The National "MMBD" Series provides the SOT-23 electrical equivalent of the standard devices listed. Each family is available in 5 configurations. MMBD 1200 FAMILY 1N914 1N914A


    OCR Scan     		PDF OT-23 1N914 1N914A 1N916 1N916A 1N3064 1N4148 1N4149 1N4151 1N4154 1N457 equivalent 1n916 equivalent 1n914 sot 23 1n914 equivalent 1N3070 equivalent FDH444 1N3070 fdh300

    1n4148-phi

    Abstract: 1n4148ph AAP153 BA479 BA482 BAS32 1N4148 minimelf 1N4148 1N4151 BAS216
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 nepeKnronaro^Me Kofl: m yHMBepcanbHbie BA479 BA482 1N4151 1N4148 1N4148-PHI 1N4448 1N914 V r » [B] 30 35 50 75 75 100 100 [A]“ 0,05 0,1 0,2 0,2 0,2 0,15 0,075 V f npw [B]


    OCR Scan     		PDF BA479 BA482 1N4151 1N4148 1N4148-PHI 1N4448 1N914 AAP153 TMMBAT42 TMMBAT43 1n4148ph BAS32 1N4148 minimelf BAS216