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    1N659 DIODE Search Results

    1N659 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    1N659 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1K60

    Abstract: 1K34A Diode Equivalent 1N87 Diode Equivalent 1N34A FDH444 1N270 diode equivalent equivalent components of diode 1N34A 1n3469 1N996 1N645
    Text: Other Diodes Part No. CrossReference Operating Temperature: -65o C to 160 o C Power Dissipation Max. Avg. Rect. Current Peak Voltage Continuous Rev. Current Forward Voltage Max. Reverse Recovery Time Package Pd mW Io(mA) VRRM (V) IR (nA)@VR (v) V F (V)@IF (mA)


    Original     		PDF BA170 BAV17 BAV18 BAV19 BAV20 BAV21 BAX16 BAY71 BAY80 1N645 1K60 1K34A Diode Equivalent 1N87 Diode Equivalent 1N34A FDH444 1N270 diode equivalent equivalent components of diode 1N34A 1n3469 1N996 1N645

    1N660

    Abstract: IN3595 1N3070 1N659 1N661
    Text: B K C INTERNA TIO NAL 03E D | 117T1fi3 ODODaV'i T T - o 3 -¿><} GENERAL PURPOSE DIODES 1N659 1N660 1N661 ABSOLUTE MAXIMUM RATINGS • VF • Tm 1.0 V @ 6.0 mA 300 ns Temperatures Storage Temperature Range Maximum Junction Operating Temperature Lead Temperature


    OCR Scan     		PDF 1N659 1N660 1N661 1N659 0GQG355 1N3070 250mW 100mA IN3595 1N3070 1N661

    1N659

    Abstract: No abstract text available
    Text: FAIRCHILD SEMICON DUC TOR fl4 D E | 3 4 bclti7M □□2747T 0 3469674 FAIRCHILD SEMICONDUCTOR 84D 2 7 4 7 9 D« 1N659/660/661 FDLL659/660/661 FAIRCHILD A Schlum berger Company General Purpose Diodes _ T - b \ ‘ 0 ° \ PACKAGES


    OCR Scan     		PDF 2747T 1N659/660/661 FDLL659/660/661 1N659, 1N660 1N661. 1N659

    1N661

    Abstract: No abstract text available
    Text: B K C INT ERN ATI ON AL 03E D | 117T1fi3 □□□□57^ T T-0 3 -¿><} GENERAL PURPOSE DIODES 1N659 1N660 1N661 A B S O L U T E MAXIMUM RATINGS • VF • Tm 1.0 V @ 6.0 mA 300 ns Temperatures Storage Temperature Range Maximum Junction Operating Temperature


    OCR Scan     		PDF 117T1fi3 1N659 1N660 1N661 1N659, 1N660, 1N661

    IR 30 D1

    Abstract: BAX17 FDH444 1N625 1N626 1N627 1N628 1N629 1N658 1N659
    Text: NATL SEMICOND DISCRETE H E D | High Voltage Diodes Glass Package D evice No. P ackage No. Vrrm V Min 1N625 DO-35 30 1N626 DO-35 50 1N627 DO-35 100 1N628 DO-35 150 1N629 DO-35 200 1N658 DO-35 120 1N659 DO-35 60 1N660 DO-35 120 1N661 DO-35 240 Ir nA Max 1000


    OCR Scan     		PDF fcSQ1130^ 00370G2 T-01-01 1N625 DO-35 1N626 1N627 1N628 IR 30 D1 BAX17 FDH444 1N629 1N658 1N659

    1S920

    Abstract: 1n659 diode BA318 1S44 1N461A 1N462A 1N463A 1N659 1N660 1N661
    Text: Diode Data NATL SEMICOND DISCRETE D | h e b5013.30 DQ37Q03 D | T -0 1 -0 1 500 25 1.0 100 D2 70 500 60 1.0 100 D2 175 1.0 100 1.0 6.0 300 Note 1 D4 6.0 300 (Note 1) D1 300 (Note 1) D1 8 (Note 2) D4 1N461A DO-35 1N463A 1N659 1N660 DO-35 DO-35 DO-35 200 60


    OCR Scan     		PDF b5013Â DQ37Q03 T-01-01 1N461A DO-35 1N462A 1N463A 1N659 1S920 1n659 diode BA318 1S44 1N660 1N661

    1N626

    Abstract: 1N658 DSAIH000251 1N661
    Text: K C • IN T E R N A T IO N A L BKC 2000 Series 30E * D ■ 1171163 Max avg Rectified Current l0 (l0 ) Max Power Disslpation-(PQ) Forward Voltage Drop (VF) Volts mA mW Volts mA BA170 BAV17 BAV18 1N251 1N461A 1N462A 1N626 1N627 1N658 1N659 1N660 20 25 60


    OCR Scan     		PDF DO-35 BA170 BAV17 BAV18 1N251 1N461A 1N462A 1N626 1N627 1N658 DSAIH000251 1N661

    6052S

    Abstract: 1N661
    Text: TYPES 1N659, 1N660. 1N661 SILICON SW ITCHING DIODES B U LLETIN NO. DL-S 739782, M AR C H 19 6 7 - R E V IS E D M AR C H 1973 M EDIUM-SPEED SWITCHING DIO DES • Rugged Double-Plug Construction m echanical d a ta D o u b le -p lu g c o n s tru c tio n a ffo rd s inte gral p o s itiv e c o n ta c t b y m eans o f a th e rm a l c o m p re s sio n b o n d . M o istu re -fre e


    OCR Scan     		PDF 1N659, 1N660. 1N661 6052S

    IN752 zener diode

    Abstract: IN659 IN965 in4938 IN752 IN751 in755 zener in758 in753 zener in753 zener diode
    Text: FAIRCHILD SEMICONDUCTOR ~ai deT| 3*4t i b 74 00271470 a J 3469674 FAIRCHILD SEMICONDUCTOR FAIRCHILD I A Schlumberger Company 84D 2 7 4 7 8 1N658/FDLL658 General Purpose Diodes T o i -Q°\ PACKAG ES 1N658 FDLL658 • B V . . . 120 V MIN @ 100 *iA • VF . 1 . 0 V ( M A X ) @ 1 00 mA


    OCR Scan     		PDF 00E747A 1N658/FDLL658 1N658 FDLL658 DO-35 LL-34 FDS01400 IN752 zener diode IN659 IN965 in4938 IN752 IN751 in755 zener in758 in753 zener in753 zener diode

    1S44

    Abstract: 1N661 1S920 1N461A 1N462A 1N463A 1N659 1N660 1S921
    Text: Diode Data NATL SEMI CONO DISCRETE H E D | b501130 0037003 0 | General Purpose Diodes Glass Package Package No. V rrm V Min 1N461A DO-35 1N462A 1N463A Device No. vF c *rr ns Max •r nA @ Max Vr V 30 500 25 1.0 100 D2 DO-35 70 500 60 1.0 100 D2 DO-35 200


    OCR Scan     		PDF b501130 T-01-01 1N461A DO-35 1N462A 1N463A 1N659 1S44 1N661 1S920 1N660 1S921

    1N626

    Abstract: BA170 1N458 1N461A hep silicon diode 1N251 1N462A 1N627 BAV17 BAV18
    Text: 0 K C INTERNATIONAL • 30E D ■ 1171163 0000302 1 ■ " p BKC 2000 Series * General Purpose Silicon Diodes in DO-35 Package ■ ■ ■ ■ P eak Inverse VoHage PIV Max avg Rectified Current (l0 ) (l0 ) Max Power Disslpation-(PQ) Forward Voltage Drop (VF)


    OCR Scan     		PDF U711M D0B0302 DO-35 BA170 BAV17 BAV18 1N251 1N461A 1N462A 1N626 1N458 hep silicon diode 1N627

    IR 30 D1

    Abstract: BAX17 FDH444 1N3070 1N625 1N626 1N627 1N628 1N629 1N658
    Text: SEMICOND DISCRETE HE D | bS01130 High Voltage Diodes Glass Package Device No. Package No. Vrrm V Min 1N625 DO-35 30 * Ir nA @ Max Vr V VF V 1000 20 1.5 Min Max If mA Ü0 3 ? 0 a 2 T g T-01-01 C pF Max 4.0 •rr ns Max Test Cond. Proc. No. 1000 (Note 1)


    OCR Scan     		PDF b5Oil0037002 1N625 DO-35 1N626 1N627 1N628 1N629 IR 30 D1 BAX17 FDH444 1N3070 1N658

    1n914 equivalent

    Abstract: 1N3067 1N5318 1N4009 equivalent 1N5319 1N814 FD6666 1n903 1n904 1N4950
    Text: DIODES COMPUTER DIODES BY ASCENDING t R R GLASS PACKAGE Continued *RR Bv ns VOLTS MAX 1N4150 C Package pF Equivalent nA •r @ Vr VOLTS @ If M IN MAX @ VOLTS MAX @ mA MAX Package D O -7/D O -35 4.0 75 100 @ 50 1.0 @ 200 2.5 DO-35 1N 3600 1N4305 4.0 75 100


    OCR Scan     		PDF 1N4150 1N4305 1N4322 1N907 1N908A 1N905 1N906 1N4009 1N4154 1N906A 1n914 equivalent 1N3067 1N5318 1N4009 equivalent 1N5319 1N814 FD6666 1n903 1n904 1N4950

    diode IN456

    Abstract: IN456
    Text: 1N456 I n ter n a t/ onal S e m ic o n d u c t o r I n c . thru 1N463/A LOW LEAKAGE DIODES And Other Diodes DIFFUSED SILICON PLANAR ABSOLUTE MAXIMUM RATINGS NoteD Tem peratures S to ra g e T e m p e ra tu re : • M axm um J u n c tio n O p e ra tin g T e m p e ra tu re :


    OCR Scan     		PDF 1N456 1N463/A IN456/A 1N457/A 1G0G37Ã diode IN456 IN456

    1n4148 D035

    Abstract: BE110 1N4449 replace 1N4448 BF113 1n3600 die 1N4150 DIE
    Text: S ilicon D iodes Silicon Sw itching D iodes for C o m p u ter A pplications in D O -35 & LL-34/35 Packages Peak Inverse V olta g e ÍM IN . PIV) Type Volts M axim um A verag e R ectified C u rre n t M axim um P ow er D issipation @ 25: C (W mA M axim um


    OCR Scan     		PDF LL-34/35 1N4156 1N4157 1N4829 1N4830 MPD200 MPD300 DO-35 1n4148 D035 BE110 1N4449 replace 1N4448 BF113 1n3600 die 1N4150 DIE

    diode SG22

    Abstract: 1N918 1N400 diode 1N5317 1N69B 1N919 1N849 1N673 1N688 1N4141
    Text: 3869720 G E N E R A L D IO D E CORP 86D 0 0 3 3 8 GENERAL DIODE CORP flb T - D E l B û b T O D DD0D33fl 3 1 T àl-à7 SILIC O N D IO D ES . . . cont’d Case Style — DO-7 'il % 9& <h r« yi o ° o TYPE 1N4B2A 1N4S3 1N463A 1N464 1N4B4A Ç90 ïO cl 30 30


    OCR Scan     		PDF DDDD33fl 1N462A 1N463A 1N464 1N482 1N482A 1N482B 1N483 1N483A 1N483B* diode SG22 1N918 1N400 diode 1N5317 1N69B 1N919 1N849 1N673 1N688 1N4141

    IN3599

    Abstract: 1N9168 1N4242 IN485 IN625 1N20S 1N4389 1N4243 in648 IN458a
    Text: jomltron « • - _ SemitronicsCorp. ■ SS 481.1541= DD0DB05 3 ■ H iç rrp tp sem ico nd u c to r s IN T E X / SEMITRONICS CORP S7E D _ , , , / / / silicon diodes Reverse Current «A)150°C (See Notes) 5.0 SO 56 50 50 6.5 2.0 1.0 2.0 2.0 15 1.5


    OCR Scan     		PDF 1N194A 1N195 1K200 1N201 JN202 IN4829 1N4J30 MP035Ã MPD302 MPB401 IN3599 1N9168 1N4242 IN485 IN625 1N20S 1N4389 1N4243 in648 IN458a

    IN3599

    Abstract: IN433A IN625 1N3068 1N218 1N4147 IN648 1N3069 1N3067 IN485
    Text: « • - _ j o m lt r o n SemitronicsCorp. ■ 481.1541= DD0DB05 3 ■ H iç rrp tp S S sem ico nd u c to r s IN T E X / SEMITRONICS CORP S7E D _ , , , / / / - <DI V t silicon diodes Reverse Current «A)150°C (See Notes) 5.0 SO 56 50 50 6.5 2.0


    OCR Scan     		PDF DD0DB05 IN3599 IN433A IN625 1N3068 1N218 1N4147 IN648 1N3069 1N3067 IN485

    2N2222A mps

    Abstract: 2N512AB 2n2222 mps 1N1096 1N589 1n4007 - 2n4001 2N698 SCR 1N233A 1N20461 2N3304
    Text: ¿S c iscre:e devices ^ ! jemitronicr hot line TOLL FREE NUMBER 800-777-3960 alpha-numeric index Type 1N34A 1N35 1N36 1N38.A.B 1N40 1N42 1N44/ 1N51 1N52,A 1N54,A 1N55AB 1N56,A 1N57,A 1N58.A 1N60.A 1N61 1N62 1N63,A 1N65 1N66.A 1N67.A 1N68.A 1N69,A 1N70,A 1N71


    OCR Scan     		PDF 1N34A 1N55AB 1N100 1N102 1N103 1N104 1N107 1N108 1N111/ 1N117 2N2222A mps 2N512AB 2n2222 mps 1N1096 1N589 1n4007 - 2n4001 2N698 SCR 1N233A 1N20461 2N3304

    E421 fet

    Abstract: equivalent transistor e176 J2N2608 J2N3821 E112 jfet e420 dual jfet 2N390G TRANSISTOR E421 dual JFET 2N4360 equivalent transistors Teledyne Semiconductor jfet
    Text: Discretes from Teledyne Semiconductor In this catalog are listed more than 2000 high-quality diodes, bipolar transistors and JFETs available from Teledyne Semiconductor. Key specifications are included for each device and many are available w ith hi-rel processing to m ilitary specifications.


    OCR Scan     		PDF O-72P* O-92X O-105 O-106 O-106P E421 fet equivalent transistor e176 J2N2608 J2N3821 E112 jfet e420 dual jfet 2N390G TRANSISTOR E421 dual JFET 2N4360 equivalent transistors Teledyne Semiconductor jfet

    BA100 diode

    Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
    Text: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any


    OCR Scan     		PDF A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 BA100 diode BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17

    TIS43

    Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
    Text: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.


    OCR Scan     		PDF 2S301 BS9300-C-598 2S305 BS9300-C-366 2S307 2S322 CV7396 BS9300-C-396 CV7647 BS9300-C-647 TIS43 equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent

    FD6666 diode

    Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
    Text: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5


    OCR Scan     		PDF A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 FD6666 diode diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82

    Thyristor Xo 602 MA

    Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
    Text: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and


    OCR Scan     		PDF