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    1N60 SCHOTTKY Search Results

    1N60 SCHOTTKY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUHS20S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS20F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation

    1N60 SCHOTTKY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1N60 diode

    Abstract: diode 1n60 1N60 1N60 Schottky 1N60 diode resistance 1N60P Diode Equivalent 1N60
    Text: 1N60/1N60P Schottky Barrier Diode Features 1. High reliability 2. Low reverse current and low forward voltage Applications Low current rectification and high speed switching Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter


    Original     		PDF 1N60/1N60P 1N60P 200mA Fax0755-8324 1N60 diode diode 1n60 1N60 1N60 Schottky 1N60 diode resistance 1N60P Diode Equivalent 1N60

    1n60 diode

    Abstract: 1n60 1N60P diode 1n60 1N60 Schottky DIODE 1n60p
    Text: 1N60/1N60P Schottky Barrier Diode Features 1. High reliability 2. Low reverse current and low forward voltage Applications Low current rectification and high speed switching Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter


    Original     		PDF 1N60/1N60P 1N60P 200mA 1-Sep-2009 1n60 diode 1n60 diode 1n60 1N60 Schottky DIODE 1n60p

    1N60 diode

    Abstract: diode 1n60 1N60 1N60P 1N60P, DO-35
    Text: 1N60 THRU 1N60P SMALL SIGNAL SCHOTTKY DIODE Reverse Voltage - 40 to 45 Volts Forward Current - 0.03 / 0.05 Ampere FEATURES DO-35 Metal-on-silicon junction, majority carrier conduction High current capability, Low forward voltage drop ● Extremely low reverse current Ir


    Original     		PDF 1N60P DO-35 DO-35 1N60 diode diode 1n60 1N60 1N60P 1N60P, DO-35

    SMALL SIGNAL SCHOTTKY DIODES DO-35

    Abstract: 1N60 1N60P diode 1n60 1n60 diode 1N60 Schottky
    Text: 1N60/1N60P Schottky Barrier Diodes SMALL SIGNAL SCHOTTKY DIODES 30m/50m AMPERES 40/45VOLTS P b Lead Pb -Free Features: * High Reliability * Low Reverse Current and Low Forward Voltage Applications: * Low Current Rectification and High Speed Switching Mechanical Data:


    Original     		PDF 1N60/1N60P 30m/50m 40/45VOLTS DO-35 DO-35 23-Jan-07 1N60P SMALL SIGNAL SCHOTTKY DIODES DO-35 1N60 1N60P diode 1n60 1n60 diode 1N60 Schottky

    Untitled

    Abstract: No abstract text available
    Text: 1N60 THRU 1N60P SMALLE SIGNAL SCHOTTKY RECTIFIERS DO-35 Metal-on-silicon junction,majority camier conduction High currentcapability,low forward voltage drop • Ultra speed switching characteristics Extremely low reverse current IR Satisfactory wave detecion efficiency


    Original     		PDF 1N60P DO-35 DO-35

    Untitled

    Abstract: No abstract text available
    Text: 1N60/1N60P Schottky Barrier Diode Features 1. High reliability 2. Low reverse current and low forward voltage Applications Low current rectification and high speed switching Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter


    Original     		PDF 1N60/1N60P 1N60P 1-Jan-2006

    1n60 diode

    Abstract: diode 1n60 1N60 1N60 diode resistance 1N60P DIODE 1n60p 1N60P, DO-35
    Text: 1N60/1N60P Schottky Barrier Diode Features 1. High reliability 2. Low reverse current and low forward voltage Applications Low current rectification and high speed switching Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter


    Original     		PDF 1N60/1N60P 1N60P 200mA 1-Nov-2006 1n60 diode diode 1n60 1N60 1N60 diode resistance DIODE 1n60p 1N60P, DO-35

    1N60 diode

    Abstract: diode 1n60 1N60 Diode Equivalent 1N60 1N60 diode resistance 1N60P
    Text: FMS 1N60/1N60P Schottky Barrier Diode Features 1. High reliability 2. Low reverse current and low forward voltage Applications Low current rectification and high speed switching Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter


    Original     		PDF 1N60/1N60P 1N60P 200mA 1N60 diode diode 1n60 1N60 Diode Equivalent 1N60 1N60 diode resistance 1N60P

    1N60P

    Abstract: 1N60P, DO-35 1N60
    Text: 1N60 THRU 1N60P SMALL SIGNAL SCHOTTKY DIODES Reverse Voltage - 40 to 45 Volts Forward Current - 0.03/0.05 Amperes FEATURES DO-35 GLASS Fast switching for high efficiency Low reverse leakage High forward surge current capability High temperature soldering guaranteed


    Original     		PDF 1N60P DO-35 MIL-STD-750, 1N60P 1N60P, DO-35 1N60

    SMALL SIGNAL SCHOTTKY DIODES DO-35

    Abstract: 1N60P diode 1n60 1N60 diode 1N60P, DO-35 TC1N60 1N60 DO35 1N60 PACKAGE
    Text: PRELIMINARY DATASHEET 500 mW DO-35 Hermetically Sealed Glass Small Signal Schottky Diodes AXIAL LEAD DO35 Absolute Maximum Ratings Symbol VRRM IF IFSM TSTG /TJ TA = 25°C unless otherwise noted Value Parameter Units DEVICE MARKING DIAGRAM 1N60 1N60P Peak Reverse Voltage


    Original     		PDF DO-35 1N60P DB-046 SMALL SIGNAL SCHOTTKY DIODES DO-35 1N60P diode 1n60 1N60 diode 1N60P, DO-35 TC1N60 1N60 DO35 1N60 PACKAGE

    Untitled

    Abstract: No abstract text available
    Text: Diodes SMD Type Surface Mount Schottky Barrier Diode 1N60 SOD-323 Features Unit: mm +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 +0.1 1.3-0.1 Low forward voltage drop. Guard ring construction for transient protection. Negligible reverse recovery time. +0.1


    Original     		PDF OD-323 200mA 200mA

    11n60p

    Abstract: SMALL SIGNAL SCHOTTKY DIODES DO-35 1n60 DIODE 1n60p
    Text: PRELIMINARY DATASHEET 500 mW DO-35 Hermetically Sealed Glass Small Signal Schottky Diodes AXIAL LEAD DO35 Absolute Maximum Ratings Symbol VRRM IF IFSM TSTG /TJ TA = 25°C unless otherwise noted Value Parameter Units DEVICE MARKING DIAGRAM 1N60 1N60P Peak Reverse Voltage


    Original     		PDF DO-35 1N60P 11n60p SMALL SIGNAL SCHOTTKY DIODES DO-35 1n60 DIODE 1n60p

    diode 1n60

    Abstract: 1n60 diode 1N60P 1N60 Diode Equivalent 1N60 1N60 PACKAGE SMALL SIGNAL SCHOTTKY DIODES DO-35 TC1N60 DO35
    Text: SEM IC O N DU C TO R 500 mW DO-35 Hermetically Sealed Glass Small Signal Schottky Diodes AXIAL LEAD DO35 Absolute Maximum Ratings Symbol VRRM IF IFSM TSTG /TJ TA = 25°C unless otherwise noted Value Parameter Units DEVICE MARKING DIAGRAM 1N60 1N60P Peak Reverse Voltage


    Original     		PDF DO-35 1N60P DB-100 diode 1n60 1n60 diode 1N60P 1N60 Diode Equivalent 1N60 1N60 PACKAGE SMALL SIGNAL SCHOTTKY DIODES DO-35 TC1N60 DO35

    1n60

    Abstract: No abstract text available
    Text: 1N60 Small Signal Schottky Diodes VOLTAGE RANGE: 40V CURRENT: 0.03 A Features DO - 35 GLASS Metal s illicon junction m ajority carrier conduction High current capability,low forward voltage drop Extrem ely low revers e current IR Ultra s peed s witching characteris tics


    Original     		PDF DO--35 30MHz 1n60

    1N91 DATASHEET

    Abstract: DO-7 1N34A Diode Equivalent 1N34A 1N92 1N91 1N91 diode 1N270 1N295 1N60
    Text: Germanium Diodes DO-1 and DO-7 Cases DO-1 TYPE NO. CASE 1N34A 1N60 1N67A 1N87A 1N91 1N92 1N93 1N100A 1N191 1N192 1N270 1N276 1N277 1N283 1N295 1N3666 1N4502 CN695 CN695A DO-7 DO-7 DO-7 DO-7 DO-1 DO-1 DO-1 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7 DO-7


    Original     		PDF 1N34A 1N67A 1N87A 1N100A 1N191 1N192 1N270 1N276 1N277 1N283 1N91 DATASHEET DO-7 1N34A Diode Equivalent 1N34A 1N92 1N91 1N91 diode 1N270 1N295 1N60

    1n60

    Abstract: 1N60P 1N60 Schottky
    Text: MCC 1N60 1N60P   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • High Reliability Low Reverse Current and Low Forward Voltage Schottky Barrier Rectifier Maximum Ratings • DO-35


    Original     		PDF 1N60P DO-35 1N60P 150mA 500mA 250K/W 200mA 1n60 1N60 Schottky

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 1N60 1N60P   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • High Reliability Low Reverse Current and Low Forward Voltage Marking : Cathode band and type number


    Original     		PDF 1N60P DO-35 1N60P 150mA 500mA 250K/W

    1N60P

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 1N60 1N60P   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • High Reliability Low Reverse Current and Low Forward Voltage Marking : Cathode band and type number


    Original     		PDF 1N60P DO-35 1N60P 50mand

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 1N60 1N60P   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • High Reliability Low Reverse Current and Low Forward Voltage Marking : Cathode band and type number


    Original     		PDF 1N60P DO-35

    2N2222A mps

    Abstract: 2N512AB 2n2222 mps 1N1096 1N589 1n4007 - 2n4001 2N698 SCR 1N233A 1N20461 2N3304
    Text: ¿S c iscre:e devices ^ ! jemitronicr hot line TOLL FREE NUMBER 800-777-3960 alpha-numeric index Type 1N34A 1N35 1N36 1N38.A.B 1N40 1N42 1N44/ 1N51 1N52,A 1N54,A 1N55AB 1N56,A 1N57,A 1N58.A 1N60.A 1N61 1N62 1N63,A 1N65 1N66.A 1N67.A 1N68.A 1N69,A 1N70,A 1N71


    OCR Scan     		PDF 1N34A 1N55AB 1N100 1N102 1N103 1N104 1N107 1N108 1N111/ 1N117 2N2222A mps 2N512AB 2n2222 mps 1N1096 1N589 1n4007 - 2n4001 2N698 SCR 1N233A 1N20461 2N3304

    1N283

    Abstract: No abstract text available
    Text: Germanium Diodes* DO-1 and DO-7 Cases TYPE NO. CASE vrrm 10 VF IF trr V (HlA) (V) (mA) (ns) MAX MAX MAX TECHNOLOGY MAX 1N34A DO-7 75 50 1.0 5.0 . POINT CONTACT 1N60 DO-7 100 50 1.0 5.0 — GOLD BONDED 1N67A DO-7 90 50 1.0 5.0 . POINT CONTACT 1N87A


    OCR Scan     		PDF 1N34A 1N67A 1N87A 1N100A 1N191 1N192 1N270 1N276 1N277 1N283

    Untitled

    Abstract: No abstract text available
    Text: Germanium Diodes* DO-1 and DO-7 Cases DO-1 TYPE NO. CASI DO-7 TECHNOLOGY Vr r m 10 VF @ if trr V (mA) (V) (mA) (ns) MAX MAX MAX MAX 1N34A DO-7 75 50 1.0 5.0 . POINT CONTACT 1N60 DO-7 100 50 1.0 5.0 . GOLD BONDED 50 1.0 5.0 . POINT CONTACT POINT CONTACT


    OCR Scan     		PDF 1N34A 1N67A 1N87A 1N100A 1N191 1N276 1N277 1N283 1N295 1N3666

    1N93

    Abstract: 1N283 1N34A 1N276
    Text: Germanium Diodes* DO-1 and DO-7 Cases DO-1 TYPE WO, CASE DO-7 io VF »F trr 00 mA (Vi (mA) (n*) MAX MAX MAX vrrm TECHNOLOGY MAX 1N34A DO-7 75 50 1.0 5.0 — POINT CONTACT 1N60 DO-7 100 50 1.0 5.0 . GOLD BONDED 1N67A DO-7 90 50 1.0 5.0 . POINT CONTACT


    OCR Scan     		PDF 1N34A 1N67A 1N87A 1N100A 1N191 1N192 1N270 1N276 1N277 1N283 1N93

    1N295

    Abstract: diodes 1N34A 1N91 diode 1N34A DO-7 1N93 1N91 1N92 1n270 1N4502
    Text: Germanium Diodes* DO-1 and DO-7 Cases DO-7 DO-1 TYPE NO. CASE TECHNOLOGY VRftM io VF @ if trr V (mA) (V) (mA) (ns) MAX MAX MAX MAX 1N34A DO-7 75 50 1.0 5.0 . POINT CONTACT GOLD BONDED POINT CONTACT 1N60 DO-7 100 50 1.0 5.0 . 1N67A DO-7 90 50 1.0 5.0


    OCR Scan     		PDF 1N34A 1N67A 1N87A 1N100A 1N191 1N192 1N270 1N276 1N277 1N283 1N295 diodes 1N34A 1N91 diode DO-7 1N93 1N91 1N92 1N4502