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    1N5822 ST Price and Stock

    Microchip Technology Inc MNS1N5822US/TR

    Schottky Diodes & Rectifiers MNS1N5822US/TR
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    Mouser Electronics MNS1N5822US/TR
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    Microchip Technology Inc JANTX1N5822US/TR

    Schottky Diodes & Rectifiers 40V Small-Signal Schottky SQ THT TR
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    Microchip Technology Inc JAN1N5822US/TR

    Schottky Diodes & Rectifiers 40V 3A Small-Signal Schottky SQ THT TR
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    Microchip Technology Inc 1N5822US/TR

    Schottky Diodes & Rectifiers 40V 3A Small-Signal Schottky SQ THT TR
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    Mouser Electronics 1N5822US/TR
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    Microchip Technology Inc JANS1N5822US/TR

    Schottky Diodes & Rectifiers 40V Small-Signal Schottky SQ THT TR
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    Mouser Electronics JANS1N5822US/TR
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    1N5822 ST Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DIODE 1N5822

    Abstract: 1N5820 1N5820RL 1N5821 1N5821RL 1N5822 1N5822RL
    Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		PDF 1N5820, 1N5821, 1N5822 1N5820 1N5822 r14525 1N5820/D DIODE 1N5822 1N5820RL 1N5821 1N5821RL 1N5822RL

    1N5822

    Abstract: 1N5820 1N5821
    Text: 1N5820 . 1N5822 1N5820 . 1N5822 Schottky Barrier Rectifier Diodes Schottky-Barrier-Gleichrichterdioden Version 2010-06-01 Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung ~ DO-201 Weight approx. Gewicht ca. 1g


    Original     		PDF 1N5820 1N5822 DO-201 UL94V-0 1N5821 1N5822 1N5820 1N5821

    1N5821

    Abstract: No abstract text available
    Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		PDF 1N5820, 1N5821, 1N5822 1N5820 1N5822 Surfa5820 1N5821 1N5821

    Untitled

    Abstract: No abstract text available
    Text: 1NB5820 . 1N5822 1NB5820 . 1N5822 Schottky Barrier Rectifiers Schottky-Barrier-Gleichrichter Version 2006-04-19 Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung 7.5 ~ DO-201 Weight approx. Gewicht ca. 1g Plastic material has UL classification 94V-0


    Original     		PDF 1NB5820 1N5822 DO-201 UL94V-0 1N5820 1N5821

    half bridge LLC inverter

    Abstract: diode 1n5822g 1N5820 1N5820G 1N5820RL 1N5820RLG 1N5821 1N5821G 1N5821RL 1N5822
    Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		PDF 1N5820, 1N5821, 1N5822 1N5820 1N5822 1N5820/D half bridge LLC inverter diode 1n5822g 1N5820G 1N5820RL 1N5820RLG 1N5821 1N5821G 1N5821RL

    1N5822RL

    Abstract: 1N5820 1N5822 1N5820RL 1N5821 1N5821RL
    Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		PDF 1N5820, 1N5821, 1N5822 1N5820 1N5822 r14525 1N5820/D 1N5822RL 1N5820RL 1N5821 1N5821RL

    Untitled

    Abstract: No abstract text available
    Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		PDF 1N5820, 1N5821, 1N5822 1N5820 1N5822 SurfaN5820 1N5821 1N5821

    1N5822

    Abstract: DIODE 1N5822 FULL WAVE RECTIFIER CIRCUITS 1N5820-D 1N5822 data sheet 1N5822 PACKAGE 5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS sine wave inverter circuit diagram 1N5820 1N5820RL
    Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		PDF 1N5820, 1N5821, 1N5822 1N5820 1N5822 1N5820/D DIODE 1N5822 FULL WAVE RECTIFIER CIRCUITS 1N5820-D 1N5822 data sheet 1N5822 PACKAGE 5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS sine wave inverter circuit diagram 1N5820RL

    5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS

    Abstract: FULL WAVE RECTIFIER CIRCUITS half bridge LLC inverter "Power Diode" 10 Ampere Schottky bridge 1N5822 rectifier diode assembly THERMAL RUNAWAY IN RECTIFIER DIODE T28 3 diodes 3 phase half-wave rectifier
    Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		PDF 1N5820, 1N5821, 1N5822 1N5820 1N5822 1N5820/D 5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS FULL WAVE RECTIFIER CIRCUITS half bridge LLC inverter "Power Diode" 10 Ampere Schottky bridge rectifier diode assembly THERMAL RUNAWAY IN RECTIFIER DIODE T28 3 diodes 3 phase half-wave rectifier

    1N5822 PACKAGE

    Abstract: 1N5821 half wave rectifier LLC 1N5820 1N5820G 1N5820RL 1N5820RLG 1N5821G 1N5821RL 1N5822
    Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		PDF 1N5820, 1N5821, 1N5822 1N5820 1N5822 1N5822 PACKAGE 1N5821 half wave rectifier LLC 1N5820G 1N5820RL 1N5820RLG 1N5821G 1N5821RL

    1N5820

    Abstract: 1N5820G 1N5820RL 1N5820RLG 1N5821 1N5821G 1N5822 DIODE T28
    Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		PDF 1N5820, 1N5821, 1N5822 1N5820 1N5822 1N5820/D 1N5820G 1N5820RL 1N5820RLG 1N5821 1N5821G DIODE T28

    1N5822

    Abstract: 1N5820
    Text: 1N5820 . 1N5822 1N5820 . 1N5822 Schottky Barrier Rectifiers Schottky-Barrier-Gleichrichter Version 2010-06-01 Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung ~ DO-201 Weight approx. Gewicht ca. 1g Plastic material has UL classification 94V-0


    Original     		PDF 1N5820 1N5822 DO-201 UL94V-0 1N5820 1N5821 1N5822

    1n5822

    Abstract: A115A 1N5820
    Text: 1N5820 . 1N5822 1N5820 . 1N5822 Schottky Barrier Rectifiers Schottky-Barrier-Gleichrichter Version 2010-03-30 Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung ~ DO-201 Weight approx. Gewicht ca. 1g Plastic material has UL classification 94V-0


    Original     		PDF 1N5820 1N5822 DO-201 UL94V-0 1N5820 1N5821 1N5822 A115A

    1N5822 JANTX

    Abstract: 1N5822 D-5B 1N5822 data sheet JANTX, JX, JAN, Schottky 1N5822 DSB3A20 DSB3A30 DSB3A40 DSB5820 DSB5821
    Text: • 1N5822 AVAILABLE IN JAN, JANTX, JANTXV AND JANS PER MIL-PRF-19500/620 1N5822 and • 3 AMP SCHOTTKY BARRIER RECTIFIERS • HERMETICALLY SEALED DSB5820 thru DSB5822 and • METALLURGICALLY BONDED DSB3A20 thru DSB3A40 MAXIMUM RATINGS 0.115/0.145 2.92/3.68


    Original     		PDF 1N5822 MIL-PRF-19500/620 1N5822 DSB5820 DSB5822 DSB3A20 DSB3A40 DSB5820 DSB3A20 1N5822 JANTX 1N5822 D-5B 1N5822 data sheet JANTX, JX, JAN, Schottky DSB3A30 DSB3A40 DSB5821

    1N5820

    Abstract: 1N5820RL 1N5821 1N5821RL 1N5822 1N5822RL
    Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		PDF 1N5820, 1N5821, 1N5822 1N5820 1N5822 1N5820/D 1N5820RL 1N5821 1N5821RL 1N5822RL

    1N5822

    Abstract: No abstract text available
    Text: 1N5820, 1N5821, 1N5822 1N5820 and 1N5822 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		PDF 1N5820, 1N5821, 1N5822 1N5820 1N5822 1N5820/D

    1N5822

    Abstract: 1N5822 201 1N5822 data sheet 1N5820 1N5821
    Text: 1N5820 . 1N5822 1N5820 . 1N5822 Schottky Barrier Rectifiers Schottky-Barrier-Gleichrichter Version 2008-01-22 Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung 7.5 ~ DO-201 Weight approx. Gewicht ca. 1g Plastic material has UL classification 94V-0


    Original     		PDF 1N5820 1N5822 DO-201 UL94V-0 1N5821 1N5822 1N5822 201 1N5822 data sheet 1N5820 1N5821

    Untitled

    Abstract: No abstract text available
    Text: 1N5820 . 1N5822 1N5820 . 1N5822 Schottky Barrier Rectifiers Schottky-Barrier-Gleichrichter Version 2006-07-04 Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung 7.5 ~ DO-201 Weight approx. Gewicht ca. 1g Plastic material has UL classification 94V-0


    Original     		PDF 1N5820 1N5822 DO-201 UL94V-0 1N5821

    JANTX, JX, JAN, Schottky

    Abstract: 1N5822 D-5B 1N5822 JANTX 1N5822 DSB3A20 DSB3A30 DSB3A40 DSB5820 DSB5821 DSB5822
    Text: • 1N5822 AVAILABLE IN JAN, PER MIL-PRF-19500/620 JANTX, JANTXV AND JANS 1N5822 and • 3 AMP SCHOTTKY BARRIER RECTIFIERS • HERMETICALLY SEALED DSB5820 thru DSB5822 and • METALLURGICALLY BONDED DSB3A20 thru DSB3A40 MAXIMUM RATINGS 0.115/0.145 2.92/3.68


    Original     		PDF 1N5822 MIL-PRF-19500/620 1N5822 DSB5820 DSB5822 DSB3A20 DSB3A40 DSB5820 DSB3A20 JANTX, JX, JAN, Schottky 1N5822 D-5B 1N5822 JANTX DSB3A30 DSB3A40 DSB5821 DSB5822

    Untitled

    Abstract: No abstract text available
    Text: 1N5820-1N5822 1N5820 - 1N5822 Features • 3.0 ampere operation at TA = 95°C with no thermal runaway. • For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. DO-201AD COLOR BAND DENOTES CATHODE 3.0 Ampere Schottky Barrier Rectifiers


    Original     		PDF 1N5820-1N5822 1N5820 1N5822 DO-201AD

    Untitled

    Abstract: No abstract text available
    Text: 1N5820-1N5822 1N5820 - 1N5822 Features • 3.0 ampere operation at TA = 95°C with no thermal runaway. • For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. DO-201AD COLOR BAND DENOTES CATHODE Schottky Rectifiers


    Original     		PDF 1N5820-1N5822 1N5820 1N5822 DO-201AD 1N5820 1N5821

    58221

    Abstract: No abstract text available
    Text: • 1N5822 AVAILABLE IN JAN, JANTX, JANTXV AND JANS 1N5822 and • 3 AMP SCHOTTKY BARRIER RECTIFIERS DSB5820 thru DSB5822 • HERMETICALLY SEALED and • METALLURGICALLY BONDED DSB3A20 thru DSB3A40 • DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS Operating Temperature: -65°C to +125°C


    OCR Scan     		PDF 1N5822 DSB5820 DSB5822 DSB3A20 DSB3A40 5821K 58221

    Untitled

    Abstract: No abstract text available
    Text: 1N5822 1N5822 AVAILABLE IN JANTX AND JANTXV and 3 AMP SCHOTTKY BARRIER RECTIFIERS DSB5820 thru DSB5822 HERMETICALLY SEALED and METALLURGICALLY BONDED DSB3A20 thru DSB3A40 DOUBLE PLUG CONSTRUCTION MAXIMUM RATINGS Ope; ating Tem perature: -65“ C to +125 C


    OCR Scan     		PDF 1N5822 DSB5820 DSB5822 DSB3A20 DSB3A40

    1NS820

    Abstract: No abstract text available
    Text: 1N5820 1N5821 1N5822 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1NS820 and 1N5822 are Designer’s Data Sheet Motorola Preferred Devices A xial Lead R ectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide


    OCR Scan     		PDF 1N5820 1N5821 1N5822 1NS820 1N5822