datasheets diode 1n5819
Abstract: 1N5818 1N5818-1N5819 1N581x 1N5819 DO-204AL
Text: Bulletin PD-20590 04/01 1N5818 1N5819 SCHOTTKY RECTIFIER 1.0 Amp Description/Features Major Ratings and Characteristics Characteristics 1N5818 1N5819 Units IF AV Rectangular 1.0 A 30/40 V Low profile, axial leaded outline waveform VRRM The 1N5818/ 1N5819 axial leaded Schottky rectifier has been
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PD-20590
1N5818
1N5819
1N5818/
1N5819
1N581X
1N581X
datasheets diode 1n5819
1N5818
1N5818-1N5819
DO-204AL
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1n5819
Abstract: No abstract text available
Text: 1N5819 40V; 1.0A Schottky Barrier Rectifier. For Use In Low Voltage - High Frequency. Page 1 of 1 Enter Your Part # Home Part Number: 1N5819 Online Store 1N5819 Diodes 40V; 1.0A Schottky Barrier Rectifier. For Use In Low Transistors Integrated Circuits Voltage - High Frequency Inverters - Free Wheeling And
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1N5819
1N5819
DO-41
com/1n5819
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Untitled
Abstract: No abstract text available
Text: Formosa MS Schottky Barrier Rectifier 1N5817 THRU 1N5819 List List. 1 Package outline. 2
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1N5817
1N5819
1000hrs.
MIL-STD-750D
METHOD-1038
METHOD-1031
MIL-STD-202F
METHOD-215
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Untitled
Abstract: No abstract text available
Text: Formosa MS Schottky Barrier Rectifier 1N5817 THRU 1N5819 List List. 1 Package outline. 2
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1N5817
1N5819
125oC
MIL-STD-750D
METHOD-1051
METHOD-1056
METHOD-4066-2
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1N5819
Abstract: 1N5817 1N5818 datasheets diode 1n5818 1N817 1N5817 Philips
Text: DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D119 1N5817; 1N5818; 1N5819 Schottky barrier diodes Product specification Supersedes data of April 1992 1996 May 03 Philips Semiconductors Product specification Schottky barrier diodes 1N5817; 1N5818; 1N5819 FEATURES
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M3D119
1N5817;
1N5818;
1N5819
1N5817
1N5819
1N5818
datasheets diode 1n5818
1N817
1N5817 Philips
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1n5819 equivalent
Abstract: 1n5819
Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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1N5817,
1N5818,
1N5819
1N5817
1N5819
1N5817
1N5818
1n5819 equivalent
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1N5819 SOD-323
Abstract: No abstract text available
Text: APPROVE SHEET Customer: Customer Part Number: 1N5817~1N5819 PanJit Part Number: 1N5817~1N5819 Approver Signature: APPROVED BY: Clock Huang PREPARED BY: Ivy Deng DATE: APR.11.2005 DATE: APR.11.2005 PANJIT INTERNATIONAL INC. TEL:886-7-6213121 FAX:886-7-6213129
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1N5817
1N5819
1N5819 SOD-323
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1N5817
Abstract: 1N5818 1N5819 diode cross reference 1N5819
Text: Formosa MS Schottky Barrier Rectifier 1N5817 THRU 1N5819 List List. 1 Package outline. 2
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1N5817
1N5819
MIL-STD-750D
METHOD-1051
125oC
METHOD-1056
METHOD-4066-2
1000hrs.
1N5818
1N5819
diode cross reference 1N5819
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Untitled
Abstract: No abstract text available
Text: Formosa MS Schottky Barrier Rectifier 1N5817 THRU 1N5819 List List. 1 Package outline. 2
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1N5817
1N5819
1000hrs.
DS-222644
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1n5819
Abstract: No abstract text available
Text: VS-1N5819, VS-1N5819-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1.0 A FEATURES • Low profile, axial leaded outline • High frequency operation Cathode Anode • Very low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength
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VS-1N5819,
VS-1N5819-M3
DO-204AL
2002/95/EC
DO-41)
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
1n5819
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DO-41
Abstract: No abstract text available
Text: Formosa MS Axial Leaded Schottky Barrier Rectifier 1N5817 THRU 1N5819 List List. 1 Package outline. 2
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1N5817
1N5819
MIL-STD-750D
METHOD-1036
JESD22-A102
METHOD-1051
METHOD-4066-2
1000hrs.
DO-41
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1n5819 equivalent
Abstract: No abstract text available
Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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1N5817,
1N5818,
1N5819
1N5817
1N5819
1N5817
1N5818
1n5819 equivalent
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1N5817
Abstract: 1N5817RL 1N5818 1N5818RL 1N5819 1N5819RL
Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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1N5817,
1N5818,
1N5819
1N5817
1N5819
1N5817/D
1N5817RL
1N5818
1N5818RL
1N5819RL
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1n5819 equivalent
Abstract: 1N5817-19 1N5817 1N5817G 1N5817RL 1N5817RLG 1N5818 1N5818G 1N5818RL 1N5818RLG
Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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1N5817,
1N5818,
1N5819
1N5817
1N5819
BRD8011/D.
DO-41
1n5819 equivalent
1N5817-19
1N5817G
1N5817RL
1N5817RLG
1N5818
1N5818G
1N5818RL
1N5818RLG
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datasheets diode 1n5818
Abstract: 1N5817 1N5817RL 1N5818 1N5818RL 1N5819 1N5819RL 1N5817-19
Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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1N5817,
1N5818,
1N5819
1N5817
1N5819
r14525
1N5817/D
datasheets diode 1n5818
1N5817RL
1N5818
1N5818RL
1N5819RL
1N5817-19
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VS-1N5819TR-M3
Abstract: VS-1N5819-M3 1n5819 vishay make
Text: VS-1N5819, VS-1N5819-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1.0 A FEATURES • Low profile, axial leaded outline • High frequency operation Cathode Anode • Very low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength
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VS-1N5819,
VS-1N5819-M3
DO-204AL
DO-41)
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
VS-1N5819TR-M3
VS-1N5819-M3
1n5819 vishay make
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Untitled
Abstract: No abstract text available
Text: VS-1N5819, VS-1N5819-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1.0 A FEATURES • Low profile, axial leaded outline • High frequency operation Cathode Anode • Very low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength
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VS-1N5819,
VS-1N5819-M3
DO-204AL
2002/95/EC
DO-41)
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
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1N5817-1N5819
Abstract: 1N5817 1N5818 1N5819 semiconductor band color code
Text: 1N5817-1N5819 1N5817 - 1N5819 Features • 1.0 ampere operation at TA = 90°C with no thermal runaway. • For use in low voltage, high frequency inverters free wheeling, and polarity protection applications. DO-41 COLOR BAND DENOTES CATHODE 1.0 Ampere Schottky Barrier Rectifiers
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1N5817-1N5819
1N5817
1N5819
DO-41
1N5817-1N5819
1N5818
1N5819
semiconductor band color code
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1N5817
Abstract: 1N5817RL 1N5818 1N5818RL 1N5819 1N5819RL
Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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1N5817,
1N5818,
1N5819
1N5817
1N5819
r14525
1N5817/D
1N5817RL
1N5818
1N5818RL
1N5819RL
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diode 1N5819
Abstract: No abstract text available
Text: Axial Lead Schottky Diode Package 1N5819 Datasheet Features • Low forward voltage: 550 mV @ IF = 1 A • High reverse breakdown voltage: 30 V • RoHS Compliant • Hermetically Sealed Axial Lead Glass Package Description The Aeroflex/Metelics 1N5819 silicon Schottky diode offers a large reverse breakdown voltage with low
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1N5819
1N5819
diode 1N5819
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1N5818
Abstract: datasheets diode 1n5818 1N5819 1N581X DO-204AL
Text: Bulletin PD-20590 rev. A 05/02 1N5818 1N5819 SCHOTTKY RECTIFIER 1.0 Amp Description/Features Major Ratings and Characteristics Characteristics 1N5818 1N5819 Units IF AV Rectangular 1.0 A 30/40 V Low profile, axial leaded outline IFSM @ tp = 5 µs sine 225
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PD-20590
1N5818
1N5819
1N5818/
1N5819
1N5818,
1N5818
datasheets diode 1n5818
1N581X
DO-204AL
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Untitled
Abstract: No abstract text available
Text: POWER SCHOTTKY RECTIFIERS 1N5817 1N5818 1N5819 1A, Up to 40V FEATURES DESCRIPTION • Very Low Forward Voltage 0.45V max @ 1A for the 1N5817 • Low Stored Charge, Majority Carrier Conduction • Economical, Convenient Plastic Package • Small Size The 1N5817, 1N5818 and 1N5819 series
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1N5817
1N5818
1N5819
1N5817)
1N5817,
1N5819
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1n4001 melf
Abstract: BY253 BY254 1N5819M
Text: Schottky Rectifiers, Rectifiers Silicon Schottky Barrier Rectifiers 1 A Average Rectified Current a t T L = 90 °C Type 1N5817 1N5818 1N5819 1N5817 to 1N5819 DO-41 Glass Package 1N5817M to 1N5819M (MELF Glass Package) 1N5817M 1N5818M 1N5819M Silicon Rectifiers 1A
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1N5817
1N5819
DO-41
1N5817M
1N5819M
1N5818
1N5819
1N5818M
1n4001 melf
BY253
BY254
1N5819M
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Untitled
Abstract: No abstract text available
Text: 1N5819 asi SCHOTTKY RECTIFIER PACKAGE STYLE D O -41 Î DESCRIPTION: t . O 25 (25.4 The 1N5819 is a General Purpose Schottky Rectifier Designed for use in Switching Power Supply Applications. yih MIN J .107 (2.7Ì .080(2.0) .205(5.2) .160(4.1) MAXIMUM RATINGS
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1N5819
1N5819
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