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    1N5819* DIODE Search Results

    1N5819* DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
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    1N5819* DIODE Price and Stock

    Diotec Semiconductor AG 1N5819

    Schottky Diode - DO-15 - 40V - 1A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 1N5819 28,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.0311
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    Taiwan Semiconductor 1N5819

    Diode Schottky 40V 1A 2-Pin DO-41
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 1N5819 1,199
    • 1 $0.465
    • 10 $0.465
    • 100 $0.365
    • 1000 $0.1505
    • 10000 $0.03
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    Diodes Incorporated 1N5819-T-F

    Diode Schottky 40V 1A 2-Pin DO-41 T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 1N5819-T-F 146
    • 1 $0.3729
    • 10 $0.3729
    • 100 $0.3729
    • 1000 $0.2057
    • 10000 $0.107
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    Microchip Technology Inc 1N5819UR-1

    Schottky Diode - 45V - 1A - 490 mV @ 1 A Forward (Vf) (Max)@If - Fast Recovery =< 500ns, > 200mA (Io) - DO-213AB (MELF, LL41) Package - Surface Mount.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 1N5819UR-1 76
    • 1 -
    • 10 $8.73
    • 100 $7.5
    • 1000 $7.01
    • 10000 $7.01
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    NTE Electronics Inc 1N5819

    Diode Schottky 40V 1A 2-Pin DO-41
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 1N5819 30
    • 1 $0.3894
    • 10 $0.3894
    • 100 $0.354
    • 1000 $0.274
    • 10000 $0.2429
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    Find more 1N5819* DIODE price and stock on Findchips.com

    1N5819* DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    1n5819

    Abstract: No abstract text available
    Text: 1N5819 40V; 1.0A Schottky Barrier Rectifier. For Use In Low Voltage - High Frequency. Page 1 of 1 Enter Your Part # Home Part Number: 1N5819 Online Store 1N5819 Diodes 40V; 1.0A Schottky Barrier Rectifier. For Use In Low Transistors Integrated Circuits Voltage - High Frequency Inverters - Free Wheeling And


    Original     		1N5819 1N5819 DO-41 com/1n5819 PDF

    datasheets diode 1n5819

    Abstract: 1N5818 1N5818-1N5819 1N581x 1N5819 DO-204AL
    Text: Bulletin PD-20590 04/01 1N5818 1N5819 SCHOTTKY RECTIFIER 1.0 Amp Description/Features Major Ratings and Characteristics Characteristics 1N5818 1N5819 Units IF AV Rectangular 1.0 A 30/40 V Low profile, axial leaded outline waveform VRRM The 1N5818/ 1N5819 axial leaded Schottky rectifier has been


    Original     		PD-20590 1N5818 1N5819 1N5818/ 1N5819 1N581X 1N581X datasheets diode 1n5819 1N5818 1N5818-1N5819 DO-204AL PDF

    1N5817

    Abstract: 1n5819 die datasheets diode 1n5818 datasheets diode 1n5819 1N5818 1N5819 DO-204AC
    Text: 1N5817 . 1N5819 1N5817 . 1N5819 Schottky Barrier Rectifier Diodes Schottky-Barrier-Gleichrichterdioden Version 2006-04-19 Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung DO-15 DO-204AC Weight approx. Gewicht ca.


    Original     		1N5817 1N5819 DO-15 DO-204AC UL94V-0 1N5818 1N5817 1n5819 die datasheets diode 1n5818 datasheets diode 1n5819 1N5818 1N5819 DO-204AC PDF

    1N5819

    Abstract: 1N5817 1N5818 datasheets diode 1n5818 1N817 1N5817 Philips
    Text: DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D119 1N5817; 1N5818; 1N5819 Schottky barrier diodes Product specification Supersedes data of April 1992 1996 May 03 Philips Semiconductors Product specification Schottky barrier diodes 1N5817; 1N5818; 1N5819 FEATURES


    Original     		M3D119 1N5817; 1N5818; 1N5819 1N5817 1N5819 1N5818 datasheets diode 1n5818 1N817 1N5817 Philips PDF

    1n5819 equivalent

    Abstract: 1n5819
    Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		1N5817, 1N5818, 1N5819 1N5817 1N5819 1N5817 1N5818 1n5819 equivalent PDF

    1n5819 equivalent

    Abstract: No abstract text available
    Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		1N5817, 1N5818, 1N5819 1N5817 1N5819 1N5817 1N5818 1n5819 equivalent PDF

    1N5817

    Abstract: 1N5817RL 1N5818 1N5818RL 1N5819 1N5819RL
    Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		1N5817, 1N5818, 1N5819 1N5817 1N5819 1N5817/D 1N5817RL 1N5818 1N5818RL 1N5819RL PDF

    1n5819 equivalent

    Abstract: 1N5817-19 1N5817 1N5817G 1N5817RL 1N5817RLG 1N5818 1N5818G 1N5818RL 1N5818RLG
    Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		1N5817, 1N5818, 1N5819 1N5817 1N5819 BRD8011/D. DO-41 1n5819 equivalent 1N5817-19 1N5817G 1N5817RL 1N5817RLG 1N5818 1N5818G 1N5818RL 1N5818RLG PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N5819-1 and 1N5819UR-1 Standard HERMETIC AXIAL LEAD / MELF SCHOTTKY BARRIER DIODE SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 193, REV. C.2 AVAILABLE AS 1N5819-1, 1N5819UR-1 JAN EQUIVALENT: SJ5819-1/SJ5819UR-1* SV5819-1/SV5819UR-1* SX5819-1/SX5819UR-1*


    Original     		1N5819-1 1N5819UR-1 1N5819-1, SJ5819-1/SJ5819UR-1* SV5819-1/SV5819UR-1* SX5819-1/SX5819UR-1* SS5819-1/SS5819UR-1* PDF

    datasheets diode 1n5818

    Abstract: 1N5817 1N5817RL 1N5818 1N5818RL 1N5819 1N5819RL 1N5817-19
    Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		1N5817, 1N5818, 1N5819 1N5817 1N5819 r14525 1N5817/D datasheets diode 1n5818 1N5817RL 1N5818 1N5818RL 1N5819RL 1N5817-19 PDF

    1N5819

    Abstract: 1N5817 1N5817-1N5819 datasheets diode 1n5819 1n5819 data sheet marking sj 1N5817 diode diode marking SJ sl diode DIODE marking Sl
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23-3L Plastic-Encapsulate Transistors 1N5817, 1N5819 SOT-23-3L SCHOTTKY DIODE 1. ANODE FEATURES 3.CATHODE 2. 80¡ À0. 05 0. 35 1. 9 Collector current A IF : 1 Collector-base voltage V VR : 1N5817: 20 1N5819: 40


    Original     		OT-23-3L 1N5817, 1N5819 OT-23-3L 1N5817: 1N5819: 1N5817 1N5819 1N5817 1N5817-1N5819 datasheets diode 1n5819 1n5819 data sheet marking sj 1N5817 diode diode marking SJ sl diode DIODE marking Sl PDF

    1N5817

    Abstract: 1N5817RL 1N5818 1N5818RL 1N5819 1N5819RL
    Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		1N5817, 1N5818, 1N5819 1N5817 1N5819 r14525 1N5817/D 1N5817RL 1N5818 1N5818RL 1N5819RL PDF

    1N5817

    Abstract: No abstract text available
    Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		1N5817, 1N5818, 1N5819 1N5817 1N5819 1N5817/D PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE MODELS: 1N5817 1N5818 1N5819 1N5817 - 1N5819 1.0A SCHOTTKY BARRIER RECTIFIER Features • · · · · Guard Ring Die Construction for Transient Protection · Lead Free Finish, RoHS Compliant Note 5 Low Power Loss, High Efficiency High Surge Capability


    Original     		1N5817 1N5818 1N5819 DO-41 J-STD-020C MIL-STD-202, DS23001 1N5817-1N5819 PDF

    sot-23 Marking sj

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23-3L Plastic-Encapsulate Diode 1N5817, 1N5819 SOT-23-3L SCHOTTKY DIODE FEATURES + 1. ANODE Power dissipation PD : 300 mW Ta=25℃ Collector current IO : 1A Collector-base voltage VR : 1N5817: 20 V 1N5819: 40


    Original     		OT-23-3L 1N5817, 1N5819 OT-23-3L 1N5817: 1N5819: 1N5817 sot-23 Marking sj PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		1N5817, 1N5818, 1N5819 1N5817 1N5819 1N5817/D PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		1N5817, 1N5818, 1N5819 1N5817 1N5819 1N5817/D PDF

    1N5817

    Abstract: 1N5817G 1N5817RL 1N5817RLG 1N5818 1N5818G 1N5818RL 1N5818RLG 1N5819 Equivalent for 1N5819
    Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation


    Original     		1N5817, 1N5818, 1N5819 1N5817 1N5819 1N5817/D 1N5817G 1N5817RL 1N5817RLG 1N5818 1N5818G 1N5818RL 1N5818RLG Equivalent for 1N5819 PDF

    1n5819

    Abstract: No abstract text available
    Text: VS-1N5819, VS-1N5819-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1.0 A FEATURES • Low profile, axial leaded outline • High frequency operation Cathode Anode • Very low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength


    Original     		VS-1N5819, VS-1N5819-M3 DO-204AL 2002/95/EC DO-41) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 1n5819 PDF

    1N5817 SPICE

    Abstract: 1N5819a 1n5818b
    Text: SPICE MODELS: 1N5817 1N5818 1N5819 1N5817 - 1N5819 1.0A SCHOTTKY BARRIER RECTIFIER Features • · · · · · Schottky Barrier Chip · Lead Free Finish, RoHS Compliant Note 5 Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency


    Original     		1N5817 1N5818 1N5819 DO-41 J-STD-020C MIL-STD-202, 1N5817-A 1N5817-B 1N5817 SPICE 1N5819a 1n5818b PDF

    Untitled

    Abstract: No abstract text available
    Text: Formosa MS Schottky Barrier Rectifier 1N5817 THRU 1N5819 List List. 1 Package outline. 2


    Original     		1N5817 1N5819 1000hrs. MIL-STD-750D METHOD-1038 METHOD-1031 MIL-STD-202F METHOD-215 PDF

    Untitled

    Abstract: No abstract text available
    Text: Formosa MS Schottky Barrier Rectifier 1N5817 THRU 1N5819 List List. 1 Package outline. 2


    Original     		1N5817 1N5819 125oC MIL-STD-750D METHOD-1051 METHOD-1056 METHOD-4066-2 PDF

    VS-1N5819TR-M3

    Abstract: VS-1N5819-M3 1n5819 vishay make
    Text: VS-1N5819, VS-1N5819-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1.0 A FEATURES • Low profile, axial leaded outline • High frequency operation Cathode Anode • Very low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength


    Original     		VS-1N5819, VS-1N5819-M3 DO-204AL DO-41) 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. VS-1N5819TR-M3 VS-1N5819-M3 1n5819 vishay make PDF

    Untitled

    Abstract: No abstract text available
    Text: POWER SCHOTTKY RECTIFIERS 1N5817 1N5818 1N5819 1A, Up to 40V FEATURES DESCRIPTION • Very Low Forward Voltage 0.45V max @ 1A for the 1N5817 • Low Stored Charge, Majority Carrier Conduction • Economical, Convenient Plastic Package • Small Size The 1N5817, 1N5818 and 1N5819 series


    OCR Scan     		1N5817 1N5818 1N5819 1N5817) 1N5817, 1N5819 PDF