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    1N5624 WITH FORWARD CURRENT 5 AMP Search Results

    1N5624 WITH FORWARD CURRENT 5 AMP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLX9188 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, SO6, Automotive Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4204F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation

    1N5624 WITH FORWARD CURRENT 5 AMP Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    diode 1n5624

    Abstract: 1N5624 1N5625 1N5626 1N5627
    Text: Certificate TH97/10561QM Certificate TW00/17276EM 1N5624 - 1N5627 GLASS PASSIVATED JUNCTION SILICON RECTIFIERS PRV : 200 - 800 Volts Io : 3.0 Amperes D2A FEATURES : * * * * * * Glass passivated cavity-free junction Low forward voltage drop High reliability


    Original     		TH97/10561QM TW00/17276EM 1N5624 1N5627 UL94V-O MIL-STD-202, 50mVp-p diode 1n5624 1N5625 1N5626 1N5627 PDF

    Untitled

    Abstract: No abstract text available
    Text: TH09/2479 TH97/2478 IATF 0113686 SGS TH07/1033 www.eicsemi.com 1N5624 - 1N5627 GLASS PASSIVATED JUNCTION SILICON RECTIFIERS PRV : 200 - 800 Volts Io : 3.0 Amperes D2A FEATURES : * * * * * * Glass passivated cavity-free junction Low forward voltage drop High reliability


    Original     		TH09/2479 TH97/2478 TH07/1033 1N5624 1N5627 UL94V-O MIL-STD-202, 50mVp-p PDF

    1N5624

    Abstract: 1N5625 1N5626 1N5627
    Text: 1N5624 THRU 1N5627 GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 800 Volts FEATURES N T E D * CASE STYLE G3 E P A T Forward Current - 3.0 Amperes 1.0 25.4 MIN 0.250 (6.3) 0.170 (4.3) DIA. 0.300 (7.6) MAX. 0.052 (1.32) 0.048 (1.22) DIA. 1.0 (25.4)


    Original     		1N5624 1N5627 MIL-S-19500 inches10 50mVp-p 1N5625 1N5626 1N5627 PDF

    diode 1n5624

    Abstract: 1N5624 with forward current 5 amp 1N5624 1N5625 1N5626 1N5627
    Text: 1N5624 THRU 1N5627 GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 800 Volts FEATURES N T E D * CASE STYLE G3 E P A T Forward Current - 3.0 Amperes 1.0 25.4 MIN 0.250 (6.3) 0.170 (4.3) DIA. 0.300 (7.6) MAX. 0.052 (1.32) 0.048 (1.22) DIA. ♦ Glass passivated cavity-free junction


    Original     		1N5624 1N5627 MIL-S-19500 50mVp-p diode 1n5624 1N5624 with forward current 5 amp 1N5625 1N5626 1N5627 PDF

    diode 1n5624

    Abstract: 1N5624 1N5625 1N5626 1N5627
    Text: Certificate TH97/10561QM 1N5624 - 1N5627 Certificate TW00/17276EM GLASS PASSIVATED JUNCTION SILICON RECTIFIERS PRV : 200 - 800 Volts Io : 3.0 Amperes DO - 201AD FEATURES : * * * * * * Glass passivated cavity-free junction Low forward voltage drop High reliability


    Original     		TH97/10561QM 1N5624 1N5627 TW00/17276EM 201AD DO-201AD UL94V-O MIL-STD-202, 50mVp-p diode 1n5624 1N5625 1N5626 1N5627 PDF

    1N5625

    Abstract: 1n5627
    Text: 1N5624 thru 1N5627 Vishay Semiconductors Glass Passivated Junction Rectifier Features • Cavity-free glass passivated junction • High temperature metallurgically bonded construction • Hermetically sealed package • Capable of meeting environmental standards of


    Original     		1N5624 1N5627 MIL-S-19500 25any 18-Jul-08 1N5625 1n5627 PDF

    1N5625

    Abstract: 1N5624
    Text: 1N5624 thru 1N5627 Vishay Semiconductors Glass Passivated Junction Rectifier Features • Cavity-free glass passivated junction • High temperature metallurgically bonded construction • Hermetically sealed package • Capable of meeting environmental standards of


    Original     		1N5624 1N5627 MIL-S-19500 08-Apr-05 1N5625 PDF

    1N5624

    Abstract: 1N5625 1N5626 1N5627
    Text: 1N5624 thru 1N5627 Glass Passivated Junction Rectifier * d e t n Features e t a P Case Style G3 • • • • Cavity-free glass passivated junction High temperature metallurgically bonded construction Hermetically sealed package Capable of meeting environmental standards of


    Original     		1N5624 1N5627 MIL-S-19500 50mVp-p 1N5625 1N5626 1N5627 PDF

    diode 1n5624

    Abstract: vishay 1N5625 1N5624 1N5625 1N5626 1N5627
    Text: 1N5624 thru 1N5627 Vishay Semiconductors formerly General Semiconductor Glass Passivated Junction Rectifiers Case Style G3 1.0 25.4 MIN Rev. Voltage 200 to 800V Forward Current 3.0A * d e t n Features e t a P • • • • Cavity-free glass passivated junction


    Original     		1N5624 1N5627 MIL-S-19500 50mVp-p 11-Feb-02 diode 1n5624 vishay 1N5625 1N5625 1N5626 1N5627 PDF

    1N5624GP

    Abstract: 1N5624 1N5625 1N5626 1N5627 1N5627GP
    Text: 1N5624GP thru 1N5627GP Vishay Semiconductors formerly General Semiconductor Glass Passivated Junction Rectifiers Rev. Voltage 200 to 800V Forward Current 3.0A * d e t n e t a Features P DO-201AD • Plastic package has Underwriters Laboratories Flammability Classification 94V-0


    Original     		1N5624GP 1N5627GP DO-201AD MIL-S-19500 50mVp-p 11-Feb-02 1N5624 1N5625 1N5626 1N5627 1N5627GP PDF

    1N562S

    Abstract: No abstract text available
    Text: 1N5624 THRU 1N5627 GLASS PASSIVATED JUNCTION RECTIFIER C u rre n t - 3.0 Amperes Voltage - 200 to 800 Volts FEATURES ♦ Glass passivated cavity-free junction ♦ High temperature metallurgical^ bonded con­ structed rectifiers ♦ Hermetically sealed package


    OCR Scan     		1N5624 1N5627 MIL-S-19500 MIL-STD-750, 1N562S PDF

    JANTX1N5624

    Abstract: 1N5B26
    Text: POWER SEMICONDUCTOR DIVISION JAN AND JANTX 1N5624 THRU 1N5627 PASSIVATED JUNCTION SILICON RECTIFIER VOLTAGE - 50 to 800 Volts T FEATURES 0.90 22.861 (5.84 OIA. .170 (4.32) \ i .320 (8.13) .200 (5.08) 7 •052 C l.32]DIA. .049 (1.24) CURRENT - 3.5 Amperes_


    OCR Scan     		1N5624 1N5627 MIL-STD-202, JANTX1N5624 1N5B26 PDF

    1n5624

    Abstract: No abstract text available
    Text: 1N5624 THRU 1N5627 GLASS PASSIVATED SILICON RECTIFIER Voltage - 200 to 800 Volts Current - 3.0 Amperes FEATURES ♦ Glass passivated cavity-free junction ♦ High temperaturae metallurgical^ bonded con­ structed rectifiers ♦ Hermetically sealed package


    OCR Scan     		1N5624 1N5627 MIL-S-19500 IL-S-19500/432. PDF

    A15D

    Abstract: 1N5625 A14F DT230 ge a15a 1n5626 jantx 1N5627 JANTX 1n5626 1N5624
    Text: R ECTIFIERS rHE INDUSTRY’S BROADEST LINE OF POWER RECTIFIERS— .250 TO 1500 AMPERES, UP TO 3000 VOLTS • CURRENT/VOLTAGE RATINGS ■ PACKAGING ■ MOUNTING AND COOLING ■ HIGH-SPEED FAST RECOVERY ■ TRANSIENT SELF-PROTECTION ■ GENERAL PURPOSE RECTIFIERS


    OCR Scan     		1N5059-62 1N4245-49 1N5624-27 DT230 A14A-P GER4001-7 A114A-M A15A-N A115A-M DT23CF A15D 1N5625 A14F ge a15a 1n5626 jantx 1N5627 JANTX 1n5626 1N5624 PDF

    JANTX1N5627

    Abstract: JAN1N5624 JANTX1N5624 Ta650 Functional details of ic 4066 1N5626 IN5624 DD0015 diode 1n5624 1N5625
    Text: MIL SPECS IC | d 00Q1H5 00135ST 1 |~~ MIL-S-19500/432 U3AF 3 Apr_x i-/\MILITARY SPECIFICATION SEMICONDUCTOR DEVICE“, DIODE, SILICON JAN1N5624 THROUGH JAN1N5627 AND JANTX1N5624 THROUGH JANTX1N5627 1. SCOPE 1.1 Scope - This specification covers the detail requirements for


    OCR Scan     		MIL-S-19500/432 JAN1N5624 JAN1N5627 JANTX1N5624 JANTX1N5627 QPL-19500, Q013bl3 MIL-S-1950U/432 5961-F291) JANTX1N5627 Ta650 Functional details of ic 4066 1N5626 IN5624 DD0015 diode 1n5624 1N5625 PDF

    powerex nd

    Abstract: No abstract text available
    Text: 7 2 9 4 6 2 1 POWEREX INC 74 d F | 7 5 T 4 L ,2 1 0001333 T "|~ Ittri MnnntoH Rectifier TRANSIENT VOLTAGE PROTECTED 5.0 Amps 200-800 Volts THE G E N ER A L ELECTRIC A15 IS A 5.0 A M PERE RATED, A X IA L LEADED G E N ER A L PURPOSE RECTIFIER. ITS DUAL H EA T SIN K CONSTRUCTION


    OCR Scan     		1N5179 1N5624 1N5625 1N5626 1N5627 6390m powerex nd PDF

    A1sm

    Abstract: 1N5624 1N5625 1N5626 1N5627 A15B A15D 1766 RECTIFIER IV-S50 general electric
    Text: 74 7294621 POWEREX INC »1^75^41,21 G001333 T "|~ Ittri MnnntoH T-ot-fÇ' 1N5179 SEE PAGE 266 »5332 SEE PAGE 209 1 Rectifier A15 SERIES TRANSIENT VOLTAGE PROTECTED 5.0 Amps 200-800 Volts 1N5624 1N5625 1N5626 1N5627 THE G EN E R A L ELECT RIC A15 IS A 5.0 AM PERE RATED, A X IA L LEAD ED


    OCR Scan     		75T4tEl 1n5179 1N5624 1N5625 1N5626 1N5627 IVS50J. 033MAX. A1sm 1N5624 1N5625 1N5626 1N5627 A15B A15D 1766 RECTIFIER IV-S50 general electric PDF

    A14F

    Abstract: DT230 a15m 1N5624
    Text: FAST R EC O VER Y RECTIFIERS SELECTOR GUIDE 2000 1500 1000 900 600 « 700 !j 6 0 0 § 500 s 400 z 5 300 § 200 H _l O > fOO 90 80 70 60 50 I 3 6 12 20 25 30 100 140 2 5 0 4 0 0 750 IK AVERAGE CURRENT-AMPERES S T A N D A R D RECTIFIERS SELECTOR GUIDE 30 00


    OCR Scan     		053MAX. A14F DT230 a15m 1N5624 PDF

    A114F

    Abstract: A114A A114N A114F GE A114B MPR12 MPR15 GER4007 DT230B ge a114d
    Text: SILICON RECTIFIERS LOW CURRENT .25 TO 3 AMPERES JEDEC GE TYPE _ — — DT230 MPR10-15 A14A-P t N5059 62 1N4245-49 — -GER4001 -7 1N5624-27 — — fil !iA-N ELECTRICAL SPECIFICATIONS A @ V r M ( r e p ) - I fM ¡surge) T a {° C ) .25 .5 SO 100 —


    OCR Scan     		1N5059 1N4245-49 1N5624-27 DT230 MPR10-15 A14A-P GER4001 M14A-M DT230F A114F A114A A114N A114F GE A114B MPR12 MPR15 GER4007 DT230B ge a114d PDF

    1N5179

    Abstract: 1N5624 1N5625 1N5626 1N5627 A15B A15D A15M A15N
    Text: FAST R EC O VER Y RECTIFIERS SELECTOR GUIDE 2000 1500 1000 900 600 « 700 ! j 600 § 500 s 400 5 300 z § H O > 200 _l fOO 90 80 70 60 50 I 3 6 12 20 25 30 100 140 2 5 0 4 0 0 750 IK A V ER A G E C U R R E N T -A M P E R E S S T A N D A R D RECTIFIERS SELECTOR GUIDE


    OCR Scan     		1N5179 1N5624 1N5625 053MAX. 1N5624 1N5625 1N5626 1N5627 A15B A15D A15M A15N PDF

    Case Style G3

    Abstract: 1NS624
    Text: 1N5624 THRU 1N5627 GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 800 Volts Forward Current - 3.0 Amperes FEATURES CASE STYLE G3 ♦ Glass passivated cavity-free junction ♦ High temperature m etallurgical^ bonded constructed ♦ Hermetically sealed package


    OCR Scan     		1N5624 1N5627 MIL-S-19500 1N5624THRU Case Style G3 1NS624 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N5624 THRU 1N5627 GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 800 Volts Forward Current - 3.0 Amperes CASE STYli 0 3 FEATURES ♦ Glass passivated cavity-free junction ♦ High temperature metallurgical^ bonded constructed ♦ Hermetically sealed package


    OCR Scan     		1N5624 1N5627 MIL-S-19500 1N5624THRU PDF

    A115B

    Abstract: A115M A115D ge a115d a115e A115F A115C GER4007 A14F DT230
    Text: R E C T IF IE R S rHE INDUSTRY’S BROADEST LINE OF POWER RECTIFIERS— .250 TO 1500 AMPERES, UP TO 3000 VOLTS • CURRENT/VOLTAGE RATINGS ■ PACKAGING ■ MOUNTING AND COOLING ■ HIGH-SPEED FAST RECOVERY ■ TRANSIENT SELF-PROTECTION ■ GENERAL PURPOSE


    OCR Scan     		1N5059-62 1N4245-49 1N5624-27 DT230 A14A-P GER4001-7 A114A-M A15A-N A115A-M DT23CF A115B A115M A115D ge a115d a115e A115F A115C GER4007 A14F PDF

    amper 1N5061

    Abstract: LN5061 A14P Rectifier A14B diode A14A surface mount A14P Amper 1N5060 1n5062 diode A14A surface diode A14B
    Text: FAS T R E C O V E R Y R EC TIFIER S S E LE C T O R GUIDE 2000 1500 1000 900 600 « 700 !j 6 0 0 § 500 s 400 z 5 300 § 200 H _l O > fOO 90 80 70 60 50 I 3 6 12 20 25 30 100 140 2 5 0 4 0 0 750 IK AVERAGE CURRENT-AMPERES S T A N D A R D R EC TIFIER S S E LE C T O R GUIDE


    OCR Scan     		400Mm. amper 1N5061 LN5061 A14P Rectifier A14B diode A14A surface mount A14P Amper 1N5060 1n5062 diode A14A surface diode A14B PDF