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    1N5627 Price and Stock

    Vishay Semiconductors 1N5627-TAP

    DIODE AVALANCHE 800V 3A SOD64
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    DigiKey 1N5627-TAP Cut Tape 17,461 1
    • 1 $1.04
    • 10 $0.851
    • 100 $1.04
    • 1000 $0.48799
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    1N5627-TAP Ammo Pack 15,000 2,500
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    Vishay Semiconductors 1N5627-TR

    DIODE AVALANCHE 800V 3A SOD64
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    DigiKey 1N5627-TR Cut Tape 12,281 1
    • 1 $1.03
    • 10 $0.839
    • 100 $1.03
    • 1000 $0.48799
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    1N5627-TR Reel 10,000 2,500
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    Vishay Semiconductors 1N5627GP-E3/54

    DIODE GEN PURP 800V 3A DO201AD
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    Vishay Semiconductors 1N5627GPHE3/54

    DIODE GEN PURP 800V 3A DO201AD
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    Vishay Semiconductors 1N5627GP-E3-54

    DIODE GEN PURP 800V 3A DO201AD
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    1N5627 Datasheets (37)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1N5627 EIC Semiconductor Glass Passivated Rectifier Diodes Original PDF
    1N5627 General Semiconductor DIODE STANDARD RECOVERY RECTIFIER 800V 3A 2DO-201AD Original PDF
    1N5627 General Semiconductor GLASS PASSIVATED JUNCTION RECTIFIER Original PDF
    1N5627 Taitron Components Rectifier Diode, Single, 800V, SOD-64, 2-Pin Original PDF
    1N5627 Vishay Telefunken Silicon Mesa Rectifiers Original PDF
    1N5627 Central Semiconductor Glass Passivated Rectifier 5.0 Amps, 200-800 Volts, GPR-3A Case Scan PDF
    1N5627 General Electric Semiconductor Data Book 1971 Scan PDF
    1N5627 General Electric Semiconductor Data Handbook 1977 Scan PDF
    1N5627 General Instrument Short Form Data 1976 Short Form PDF
    1N5627 Harris Semiconductor 3 Amp, 200V - 800V Diodes Scan PDF
    1N5627 International Semiconductor RECTIFIER DIODE Scan PDF
    1N5627 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    1N5627 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    1N5627 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N5627 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1N5627 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    1N5627 Powerex Lead Mounted Rectifier Scan PDF
    1N5627 Solid State 800 V, 3 A standard recovery rectifier Scan PDF
    1N5627 Sun Wai Electronic Company Silicon Rectifiers Scan PDF
    1N5627 Telefunken Electronic Sinterglass Rectifiers Scan PDF

    1N5627 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1N5625

    Abstract: 1n5627
    Text: 1N5624 thru 1N5627 Vishay Semiconductors Glass Passivated Junction Rectifier Features • Cavity-free glass passivated junction • High temperature metallurgically bonded construction • Hermetically sealed package • Capable of meeting environmental standards of


    Original     		PDF 1N5624 1N5627 MIL-S-19500 25any 18-Jul-08 1N5625 1n5627

    Untitled

    Abstract: No abstract text available
    Text: 1N5624GP thru 1N5627GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier application structure for high reliability • Cavity-free glass-passivated junction • Low forward voltage drop • Low leakage current • High forward surge capability


    Original     		PDF 1N5624GP 1N5627GP MIL-S-19500 22-B106 DO-201AD AEC-Q101 2002/95/EC 2002/96/EC 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: 1N5627+JAN Diodes Silicon Rectifier Military/High-RelY I O Max.(A) Output Current3.0 @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage800 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.125¥ V(FM) Max.(V) Forward Voltage950m @I(FM) (A) (Test Condition)3.0 @Temp. (øC) (Test Condition)


    Original     		PDF 1N5627 Voltage800 Voltage950m Current200u StyleDO-41

    1N5624GP

    Abstract: 1N5627GP JESD22-B102D J-STD-002B 1n5626gp
    Text: 1N5624GP thru 1N5627GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop d* e t n e Pat * Glass-plastic encapsulation


    Original     		PDF 1N5624GP 1N5627GP DO-201AD MIL-S-19500 2002/95/EC 2002/96/EC 08-Apr-05 1N5627GP JESD22-B102D J-STD-002B 1n5626gp

    1N5625GP

    Abstract: No abstract text available
    Text: 1N5624GP . 1N5627GP 3.0 Amp. Glass Passivated Junction Rectifier Current 3.0 A at 70º C Voltage 200V to 800 V DO-201AD DO-27 R FEATURES • Glass passivated chip junction • Hyperectifier structure for high reliability • Cavity-free glass-passivated junction


    Original     		PDF 1N5624GP 1N5627GP DO-201AD DO-27) 2011/65/EU 2002/96/EC MIL-STD-750 J-STD-002 1N5625GP

    diode 1n5624

    Abstract: 1N5624 1N5625 1N5626 1N5627
    Text: Certificate TH97/10561QM Certificate TW00/17276EM 1N5624 - 1N5627 GLASS PASSIVATED JUNCTION SILICON RECTIFIERS PRV : 200 - 800 Volts Io : 3.0 Amperes D2A FEATURES : * * * * * * Glass passivated cavity-free junction Low forward voltage drop High reliability


    Original     		PDF TH97/10561QM TW00/17276EM 1N5624 1N5627 UL94V-O MIL-STD-202, 50mVp-p diode 1n5624 1N5625 1N5626 1N5627

    1N5620GP

    Abstract: 1N5624GP 1N5625GP 1N5626GP 1N5627GP
    Text: 1N5624GP. 1N5627GP 3 Amp. Glass Passivated Junction Rectifier Dimensions in mm. DO-201 AD Plastic Voltage 200 to 800 V. Current 3.0 A. at 70 °C. 9.1 ± 0.3 62.5 ± 0.5 Mounting instructions 1. Min. distance from body to soldering point, 4 mm.


    Original     		PDF 1N5624GP. 1N5627GP DO-201 1N5624GP 1N5625GP 1N5626GP 1N5620GP 1N5620GP 1N5624GP 1N5625GP 1N5626GP 1N5627GP

    1N5624GP

    Abstract: 1N5627GP JESD22-B102 J-STD-002
    Text: 1N5624GP thru 1N5627GP Vishay General Semiconductor Glass Passivated Junction Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction • Low forward voltage drop d* e t n e Pat • Low leakage current


    Original     		PDF 1N5624GP 1N5627GP DO-201AD MIL-S-19500 2002/95/EC 2002/96/EC 18-Jul-08 1N5627GP JESD22-B102 J-STD-002

    Untitled

    Abstract: No abstract text available
    Text: 1N5624GP, 1N5625GP, 1N5626GP, 1N5627GP www.vishay.com Vishay General Semiconductor Glass Passivated Junction Plastic Rectifier FEATURES SUPERECTIFIER • Superectifier application structure for high reliability • Cavity-free glass-passivated junction


    Original     		PDF 1N5624GP, 1N5625GP, 1N5626GP, 1N5627GP 22-B106 DO-201AD AEC-Q101 2002/95/EC. 2002/95/EC 2011/65/EU.

    1N5624

    Abstract: 1N5625 1N5626 1N5627
    Text: 1N5624 thru 1N5627 Glass Passivated Junction Rectifier * d e t n Features e t a P Case Style G3 • • • • Cavity-free glass passivated junction High temperature metallurgically bonded construction Hermetically sealed package Capable of meeting environmental standards of


    Original     		PDF 1N5624 1N5627 MIL-S-19500 50mVp-p 1N5625 1N5626 1N5627

    DIODE 1N5625 V

    Abstract: vishay 1N5625 DIODE 1N5625 1N5625 diode 1N5625 1N5625 Specifications 1N5626
    Text: 1N5624, 1N5625, 1N5626, 1N5627 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Controlled avalanche characteristics • Low reverse current • High surge current loading


    Original     		PDF 1N5624, 1N5625, 1N5626, 1N5627 2002/95/EC 2002/96/EC OD-64 MIL-STD-750, 1N5624 1N5625 DIODE 1N5625 V vishay 1N5625 DIODE 1N5625 1N5625 diode 1N5625 Specifications 1N5626

    1N5625

    Abstract: 1N5624
    Text: 1N5624 thru 1N5627 Vishay Semiconductors Glass Passivated Junction Rectifier Features • Cavity-free glass passivated junction • High temperature metallurgically bonded construction • Hermetically sealed package • Capable of meeting environmental standards of


    Original     		PDF 1N5624 1N5627 MIL-S-19500 08-Apr-05 1N5625

    Untitled

    Abstract: No abstract text available
    Text: 1N5624 to 1N5627 Vishay Semiconductors Standard Avalanche Sinterglass Diode Features • • • • Glass passivated junction Hermetically sealed package Controlled avalanche characteristics Low reverse current e2 949588 • High surge current loading • Lead Pb -free component


    Original     		PDF 1N5624 1N5627 2002/95/EC 2002/96/EC OD-64 MIL-STD-750, 1N5625 1N5626 1N5627

    1N5625

    Abstract: 1N5625 diode diode 1n5624 vishay 1N5625 1N5626
    Text: 1N5624, 1N5625, 1N5626, 1N5627 Vishay Semiconductors Standard Avalanche Sinterglass Diode FEATURES • Glass passivated junction • Hermetically sealed package • Controlled avalanche characteristics • Low reverse current • High surge current loading


    Original     		PDF 1N5624, 1N5625, 1N5626, 1N5627 2002/95/EC 2002/96/EC OD-64 MIL-STD-750, 1N5624 1N5625 1N5625 diode diode 1n5624 vishay 1N5625 1N5626

    1N5624

    Abstract: 1N5625 1N5626 1N5627
    Text: 1N5624 THRU 1N5627 GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 800 Volts FEATURES N T E D * CASE STYLE G3 E P A T Forward Current - 3.0 Amperes 1.0 25.4 MIN 0.250 (6.3) 0.170 (4.3) DIA. 0.300 (7.6) MAX. 0.052 (1.32) 0.048 (1.22) DIA. 1.0 (25.4)


    Original     		PDF 1N5624 1N5627 MIL-S-19500 inches10 50mVp-p 1N5625 1N5626 1N5627

    1N5624GP

    Abstract: 1N5625GP 1N5626GP 1N5627GP
    Text: 1N5624GP THRU 1N5627GP GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 800 Volts FEATURES D * DO-201AD N T E ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High temperature metallurgically bonded construction


    Original     		PDF 1N5624GP 1N5627GP DO-201AD MIL-S-19500 50mVp-p 1N5625GP 1N5626GP 1N5627GP

    diode 1n5624

    Abstract: vishay 1N5625 9563 1N5624 1N5625 1N5626 1N5627
    Text: 1N5624.1N5627 Vishay Telefunken Silicon Mesa Rectifiers Features D D D D D Glass passivated junction Hermetically sealed package Controlled avalanche characteristics Low reverse current High surge current loading Applications 94 9588 Rectifier, general purpose


    Original     		PDF 1N5624. 1N5627 1N5624 1N5625 1N5626 D-74025 27-Sep-00 diode 1n5624 vishay 1N5625 9563 1N5624 1N5625 1N5626 1N5627

    diode 1n5624

    Abstract: 1N5624 with forward current 5 amp 1N5624 1N5625 1N5626 1N5627
    Text: 1N5624 THRU 1N5627 GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 800 Volts FEATURES N T E D * CASE STYLE G3 E P A T Forward Current - 3.0 Amperes 1.0 25.4 MIN 0.250 (6.3) 0.170 (4.3) DIA. 0.300 (7.6) MAX. 0.052 (1.32) 0.048 (1.22) DIA. ♦ Glass passivated cavity-free junction


    Original     		PDF 1N5624 1N5627 MIL-S-19500 50mVp-p diode 1n5624 1N5624 with forward current 5 amp 1N5625 1N5626 1N5627

    Untitled

    Abstract: No abstract text available
    Text: 57E D • rA Ü U H 345=1325 GD00L.75 bT2 « F Ü R S ~ m 1N5624GP.1N5627GP FAGOR ELECTRONICS 3 Amp Glass Passivated Junction Rectiier f V -■ •«• Dimensions in mm. - DO-27 A DO-201 AD Plastic -i— . -i V - •* V- Voltage 200 to 800 V.


    OCR Scan     		PDF GD00L 1N5624GP. 1N5627GP DO-27 DO-201 DO-201AD DO-27A DO-201AE

    IN5624

    Abstract: 5627GP in5627 1N5620GP 1N5624GP 1N5627GP 5626GP IN5627GP
    Text: 7E D • 345=1325 GD00L.75 bT2 « F G R S — 1N5624GP. 1N5627GP FAGOR ELECTRONICS 3 Amp. Glass Passivated Tunction Rectiier Dimensions in mm. DO-27 A DO-201 AD - Plastic Mounting instructions 1. Min. distance from body to soldering point, 4 mm.


    OCR Scan     		PDF GD00L 1N5624GP. 1N5627GP DO-27 DO-201 5624GP 562SGP 5626GP 5627GP C2-17 IN5624 5627GP in5627 1N5620GP 1N5624GP 1N5627GP IN5627GP

    Untitled

    Abstract: No abstract text available
    Text: 1N5624GPTHRU 1N5627GP GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 800 Volts Forward Current DQ-201 AD FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High temperature metallurgical^ bonded construction


    OCR Scan     		PDF 1N5624GPTHRU 1N5627GP DQ-201 MIL-S-19500

    1n5624

    Abstract: No abstract text available
    Text: 1N5624 THRU 1N5627 GLASS PASSIVATED SILICON RECTIFIER Voltage - 200 to 800 Volts Current - 3.0 Amperes FEATURES ♦ Glass passivated cavity-free junction ♦ High temperaturae metallurgical^ bonded con­ structed rectifiers ♦ Hermetically sealed package


    OCR Scan     		PDF 1N5624 1N5627 MIL-S-19500 IL-S-19500/432.

    Untitled

    Abstract: No abstract text available
    Text: 1N5624GP.1N5627GP FAGOR 3 Amp. Glass Passivated Junction Rectifier Dimensions in mm. ò ou> g D0-201 AD Plastic Voltage 200 to 800 V. Current 3.0 A. at 70 °C. \J -3 ±0d\ _ 59.5 min._ Mounting instructions


    OCR Scan     		PDF 1N5624GP. 1N5627GP D0-201 1N5620GP

    JANTX1N5624

    Abstract: 1N5B26
    Text: POWER SEMICONDUCTOR DIVISION JAN AND JANTX 1N5624 THRU 1N5627 PASSIVATED JUNCTION SILICON RECTIFIER VOLTAGE - 50 to 800 Volts T FEATURES 0.90 22.861 (5.84 OIA. .170 (4.32) \ i .320 (8.13) .200 (5.08) 7 •052 C l.32]DIA. .049 (1.24) CURRENT - 3.5 Amperes_


    OCR Scan     		PDF 1N5624 1N5627 MIL-STD-202, JANTX1N5624 1N5B26