1N5617AND1N5819ARE Search Results

1N581B

Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N 5817 1N5818 1N 5819 A x ia l Lead R e c tifie rs . . em ploying the Schottky Barrier principle in a large area m e ta l-to -s ilic o n power diode. S ta te -o f-th e -a rl geometry features chrom e barrier metal, epitaxial construction