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    1N5347B EQUIVALENT Search Results

    1N5347B EQUIVALENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    1N5347B EQUIVALENT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    5W zener diode

    Abstract: zener diode 12v 0.5 w ZENER DIODE 8.5 V 5W 1N5365B equivalent 1N5341B diode 1N5352B 1n5354b 5w zener 1n5349b 1N5355B
    Text: 1N53xxB 5W Zener Diode .052 1.3 DIA. .048 (1.2) 1.0 (25.4) MIN. .375 (9.5) .335 (8.5) .220 (5.6) DIA. .197 (5.0) 1.0 (25.4) MIN. PRIMARY CHARACTERISTICS VRRM 6.2~200V VF 1.2V TJ max 150°C DO-201AD Dimensions in inches and (millimeters) Features Mechanical Data


    Original     		PDF 1N53xxB DO-201AD DO-201AD UL94V-0 MIL-STD-202, 5W zener diode zener diode 12v 0.5 w ZENER DIODE 8.5 V 5W 1N5365B equivalent 1N5341B diode 1N5352B 1n5354b 5w zener 1n5349b 1N5355B

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF177/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF177 MRF177M N–Channel Enhancement Mode MOSFETs Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as drivers or output amplifiers in push–pull


    Original     		PDF MRF177/D MRF177 MRF177M 400part. MRF177 MRF177/D*

    1N5333 SERIES

    Abstract: 1N5333-5388B ipc 1n5351b 1N5333 1N5333B 1N5388B SMBG5333B SMBG5388B SMBJ5388B 5 watt zener
    Text: 1N5333B thru 1N5388B Silicon 5 Watt Zener Diodes SCOTTSDALE DIVISION APPEARANCE The 1N5333-5388B JEDEC registered series of axial-leaded 5.0 watt Zeners provides voltage regulation in a selection from 3.3 to 200 volts with different tolerances as identified by specific suffix letter on the part number.


    Original     		PDF 1N5333B 1N5388B 1N5333-5388B 1N5333 SERIES ipc 1n5351b 1N5333 1N5388B SMBG5333B SMBG5388B SMBJ5388B 5 watt zener

    j945

    Abstract: nippon ferrite MRF177 motorola ups schematic rf push pull mosfet power amplifier 1N5347B ALC 665 MOS FIELD EFFECT TRANSISTOR
    Text: MOTOROLA Order this document by MRF177/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF177 Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as a driver or output amplifier in push–pull


    Original     		PDF MRF177/D MRF177 j945 nippon ferrite MRF177 motorola ups schematic rf push pull mosfet power amplifier 1N5347B ALC 665 MOS FIELD EFFECT TRANSISTOR

    1N53388

    Abstract: 1N53388B 1N5333B AC POWER ZENERS 6 WATT 5 watt zener zener diode 3 watt a 220 1N5336 diode 1N5349b
    Text: 1N5333B thru 1N53388B Silicon 5 Watt Zener Diodes SCOTTSDALE DIVISION APPEARANCE The 1N5333-5388B JEDEC registered series of axial-leaded 5.0 watt Zeners provides voltage regulation in a selection from 3.3 to 200 volts with different tolerances as identified by specific suffix letter on the part number.


    Original     		PDF 1N5333B 1N53388B 1N5333-5388B 1N53388B 1N53388 AC POWER ZENERS 6 WATT 5 watt zener zener diode 3 watt a 220 1N5336 diode 1N5349b

    1N5333 SERIES

    Abstract: ipc 1n5351b 1N5333 1N5333-5388B 1N5333B 1N5388B MIL-PRF19500 SMBG5333B SMBG5388B SMBJ5388B
    Text: 1N5333B thru 1N5388B, e3 Silicon 5 Watt Zener Diodes SCOTTSDALE DIVISION APPEARANCE The 1N5333-5388B JEDEC registered series of axial-leaded 5.0 watt Zeners provides voltage regulation in a selection from 3.3 to 200 volts with different tolerances as identified by specific suffix letter on the part number.


    Original     		PDF 1N5333B 1N5388B, 1N5333-5388B 1N5333 SERIES ipc 1n5351b 1N5333 1N5388B MIL-PRF19500 SMBG5333B SMBG5388B SMBJ5388B

    Diode 1N5333B

    Abstract: "Power over Ethernet"
    Text: 1N5333B thru 1N5388B, e3 Silicon 5 Watt Zener Diodes SCOTTSDALE DIVISION APPEARANCE The 1N5333-5388B JEDEC registered series of axial-leaded 5.0 watt Zeners provides voltage regulation in a selection from 3.3 to 200 volts with different tolerances as identified by specific suffix letter on the part number.


    Original     		PDF 1N5333B 1N5388B, 1N5333-5388B 1N5333B/TR8 IEEE802 lrwnapp002/Sourcing/Automation/Automation CPR/05162011/MSSD/1N5333B 18-May-2011 Diode 1N5333B "Power over Ethernet"

    Untitled

    Abstract: No abstract text available
    Text: 1N5333B thru 1N5388B, e3 Silicon 5 Watt Zener Diodes SCOTTSDALE DIVISION APPEARANCE The 1N5333-5388B JEDEC registered series of axial-leaded 5.0 watt Zeners provides voltage regulation in a selection from 3.3 to 200 volts with different tolerances as identified by specific suffix letter on the part number.


    Original     		PDF 1N5333B 1N5388B, 1N5333-5388B /EMController/Zener/Microsemi/1N5333BE3-T 17-Nov-2011

    BTA136

    Abstract: ft0818mw SM4007 Panjit BY288 FT2516NH FS0802NH FT0817MH ft1208MW ft0618mh equivalent components of diode her207
    Text: Cross Reference Cross Reference Every care has been taken in compiling this cross reference list which is published in good faith to assist engineers. Readers are reminded that list is intended for guidance only. FAGOR ELECTRÓNICA can not be held responsible for any


    Original     		PDF 05NH45 05NH46 05NU41 05NU42 0R8GU41 5KA10 5KA10A 5KA11 5KA11A 5KA12 BTA136 ft0818mw SM4007 Panjit BY288 FT2516NH FS0802NH FT0817MH ft1208MW ft0618mh equivalent components of diode her207

    TMS380C16

    Abstract: flyback transformer THT pin connections pinout db9 rj45 TMS380 PE65611 ZBF503D-00TA isu ferrite ring 78z022 TMS38054 TMS380C26
    Text: Questions should be faxed to the: TMS380 TECHNICAL SUPPORT LINE 713 274-4027 TEXAS INSTRUMENTS Page 2 PREFACE The TMS38054 is designed with a Constant Gain Phase Detector to provide more margin for successful design of a ring interface and to enable operation over unshielded twisted pair.


    Original     		PDF TMS380 TMS38054 ZBF503D-00TA 23Z87SM 74AS74 74AS00 74AS04 74BCT244 23Z110 78Z022 TMS380C16 flyback transformer THT pin connections pinout db9 rj45 PE65611 ZBF503D-00TA isu ferrite ring TMS380C26

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF177 Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as a driver or output amplifier in push–pull configurations. Can be used in manual gain control, ALC and modulation


    Original     		PDF MRF177 MRF177

    J945

    Abstract: 1N5347B MRF177
    Text: Order this document by MRF177/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF177 Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as a driver or output amplifier in push–pull


    Original     		PDF MRF177/D MRF177 J945 1N5347B MRF177

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF177/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF177 Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as a driver or output amplifier in push–pull


    Original     		PDF MRF177/D MRF177 MRF177 MRF177/D

    MRF177

    Abstract: 1N5347B transistor RF S-parameters
    Text: MOTOROLA Order this document by MRF177/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF177 Designed for broadband commercial and military applications up to 400 MHz frequency range. Primarily used as a driver or output amplifier in push–pull


    Original     		PDF MRF177/D MRF177 MRF177 1N5347B transistor RF S-parameters

    BA159 equivalent

    Abstract: B80C1500-1000 BYS26-45 equivalent sb5100 B380C2000/1500 1N5048 BYX55-350 BYS21-45 BYX55-600 SMB358
    Text: Typen - Vergleichsliste Typ Diotec 1A01/G 1A02/G 1A03/G 1A04/G 1A05/G 1A06/G 1N5059 1N5059 1N5059 1N5060 1N5061 1N5062 6A05/G 6A10/G 6A20/G 6A40/G 6A60/G 6A80/G 6A100/G Fam. R R R R R R P600A P600B P600D P600G P600J P600K P600M R R R R R R R 1B005 1B01 1B02


    Original     		PDF 1A01/G 1A02/G 1A03/G 1A04/G 1A05/G 1A06/G 1N5059 1N5060 BA159 equivalent B80C1500-1000 BYS26-45 equivalent sb5100 B380C2000/1500 1N5048 BYX55-350 BYS21-45 BYX55-600 SMB358

    BYD74G

    Abstract: FUR460 diode tfk 18db6a diode cross reference FAGOR SM6T33CA BZY97C tfk 240 1SMZG06GP D4SB80Z
    Text: Cross Reference Every care has been taken in compiling this cross reference list which is published in good faith to assist engineers. Readers are reminded that this list is intended for guidance only. FAGOR ELECTRÓNICA can not be held responsible for any


    Original     		PDF 5KA10 5KA10A 5KA11 5KA11A 5KA12 5KA12A 5KA13 5KA13A 5KA15 5KA15A BYD74G FUR460 diode tfk 18db6a diode cross reference FAGOR SM6T33CA BZY97C tfk 240 1SMZG06GP D4SB80Z

    2272 t4

    Abstract: c17 dual mos 1N5347B equivalent MRF177 MRF177 equivalent MRF177M
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA M RF177 M R F 177M * The RF MOSFET Line RF Power Field Effect Transistors ‘Motorola Preferred Device N-Channel Enhancement Mode MOSFETs 100 W, 20 V, 400 MHz N-CHANNEL BROADBAND RF POWER MOSFETs Designed for broadband commercial and military applications up to 400 MHz


    OCR Scan     		PDF 44A-01 RF177 MRF177M MRF177 MRF177M MRF177 P/RM77 2272 t4 c17 dual mos 1N5347B equivalent MRF177 equivalent

    J945

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field E ffect Transistors MRF177 N-Channel Enhancement Mode MOSFET 100 W, 28 V, 400 MHz N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 400 MHz


    OCR Scan     		PDF MarketinC14 10nFD 50Vdc 1N5347B 20Vdc RF177 J945

    J115 mosfet

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF177 RF Power Field Effect Transistors N-Channel Enhancement Mode MOSFET 100 W, 28 V, 400 MHz N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 400 MHz


    OCR Scan     		PDF 10pFD 50Vdc 1N5347B, RF177 J115 mosfet

    J141 mosfet

    Abstract: MRF-161 fet j141 mrf161 2191F SELF vk200 k 575
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF P o w er Field E ffe c t lY an sisto r N-Channel Enhancement-Mode . . . designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range. • Guaranteed 28 Volt, 400 MHz Performance


    OCR Scan     		PDF MRF161, MRF161 AN215A J141 mosfet MRF-161 fet j141 2191F SELF vk200 k 575

    Untitled

    Abstract: No abstract text available
    Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF177 MRF177M N-Channel Enhancement Mode MOSFETs D e sig n e d fo r b ro a d b a n d c o m m e rc ia l and m ilita ry a p p lic a tio n s up to 4 0 0 M H z fre q u e n c y range. P rim a rily u sed as d rive rs o r o u tp u t a m p lifie rs in p u s h -p u ll


    OCR Scan     		PDF 1N5347B.

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF177/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF177 RF Power Field Effect Transistors N-Channel Enhancement Mode MOSFET 100W , 28 V, 400 MHz N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 400 MHz


    OCR Scan     		PDF MRF177/D

    MRF161

    Abstract: J141 mosfet fet j141
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MRF161 The RF MOSFET Line 5.0 W 2 .0 -4 0 0 MHz N-CHANNEL MOS BROADBAND RF POWER N-CHANNEL ENHANCEMENT-MODE RF POWER FIELD-EFFECT TRANSISTOR . . . designed fo r w id e b a n d large-signal a m p lifie r and o scillato r


    OCR Scan     		PDF MRF161 MRF161, MRF161 J141 mosfet fet j141

    IN5363B

    Abstract: IN5361B P6KEI5CA IN5956B TFK S 417 T IM200Z in5349b IN5384B in5366b P6KEI5A
    Text: Cross Reference Every care has b een taken in compiling this cross referen­ ce list which is published in good faith to assist engineers, Readers are rem inded that this list is intended for guidance only FAGOR ELECTRÓNICA can not be held responsible for any


    OCR Scan     		PDF 03NH45 05NH46 05NU41 05NU42 0R8GU41 5KE10 5KE10Û 5KE100A 5KE100CA 5KE10CCF IN5363B IN5361B P6KEI5CA IN5956B TFK S 417 T IM200Z in5349b IN5384B in5366b P6KEI5A