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    1N4942 AVALANCHE Search Results

    1N4942 AVALANCHE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NR8360JP-BC-AZ Renesas Electronics Corporation φ 30 μm InGaAs Avalanche Photo Diode 14-PIN DIP Module With TEC Visit Renesas Electronics Corporation
    NR8800FS-CB-AZ Renesas Electronics Corporation φ 80 μm InGaAs Avalanche Photo Diode Module for OTDR Applications Visit Renesas Electronics Corporation
    NR8300FP-CC-AZ Renesas Electronics Corporation 1000 to 1600 nm Optical Fiber Communications φ 30 µm InGaAs Avalanche Photo Diode Module Visit Renesas Electronics Corporation
    NR8800FS-CB-AZ/SH Renesas Electronics Corporation φ 80 μm InGaAs Avalanche Photo Diode Module for OTDR Applications Visit Renesas Electronics Corporation
    NR4211TH-AZ Renesas Electronics Corporation Receiver Limiting Tia, With Dca Function) Inalas Apd Receiver With Internal Pre-Amplifier For 10 Gb/S Applications Visit Renesas Electronics Corporation

    1N4942 AVALANCHE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    1N4946

    Abstract: No abstract text available
    Text: 1N4942 – 1N4946 Qualified Levels: JAN, JANTX, and JANTXV Voidless Hermetically Sealed Fast Recovery Glass Rectifiers Available on commercial versions Qualified per MIL-PRF-19500/359 DESCRIPTION This Series of industry recognized voidless, hermetically sealed Fast recovery glass rectifiers


    Original     		1N4942 1N4946 MIL-PRF-19500/359 MIL-PRF-19500/359 1N5615 1N5619 T4-LDS-0295, 1N4946 PDF

    1N4942 avalanche

    Abstract: 1N4946
    Text: 1N4942 – 1N4946 Qualified Levels: JAN, JANTX, and JANTXV Voidless Hermetically Sealed Fast Recovery Glass Rectifiers Available on commercial versions Qualified per MIL-PRF-19500/359 DESCRIPTION This Series of industry recognized voidless, hermetically sealed fast recovery glass rectifiers


    Original     		1N4942 1N4946 MIL-PRF-19500/359 MIL-PRF-19500/359 1N5615 1N5619 T4-LDS-0295, 1N4942 avalanche 1N4946 PDF

    1N5623US

    Abstract: JAN1N4947 Microsemi micronote series 050 TVS diode MELF 1N4942 1N4948 1N5615 1N5615US 1N5623 JAN1N4
    Text: 1N4942 thru 1N4948 VOIDLESS-HERMETICALLY SEALED FAST RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION APPEARANCE This “fast recovery” rectifier diode series is military qualified to MIL-PRF-19500/359 and is ideal for high-reliability applications where a failure cannot be tolerated.


    Original     		1N4942 1N4948 MIL-PRF-19500/359 1N5615 1N5623 1N5615US 1N5623US) 1N5623US JAN1N4947 Microsemi micronote series 050 TVS diode MELF 1N4948 JAN1N4 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N4942 thru 1N4948 VOIDLESS-HERMETICALLY SEALED FAST RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION APPEARANCE This “fast recovery” rectifier diode series is military qualified to MIL-PRF-19500/359 and is ideal for high-reliability applications where a failure cannot be tolerated.


    Original     		1N4942 1N4948 MIL-PRF-19500/359 1N5615 1N5623 1N5615US 1N5623US) PDF

    2KV DIODE

    Abstract: semtech alpac three phase full wave uncontrolled rectifier sdhd5k 1N6467 fast recovery diode 1a trr 200ns SCPA2 1N6123 JAN 1N6463 JANTX 73A 552
    Text: Semtech Corporation Power Discretes This publication presents technical information for the several product families that comprise the Semtech Corporation Power Discretes Product-Lines. The families include Hi-Rel qualified rectifiers, bridges, ceramic capacitors, transient voltage suppressors and custom assemblies. These are available in a variety of packages. Complete device specifications and typical


    Original     		PD-DB-0810 2KV DIODE semtech alpac three phase full wave uncontrolled rectifier sdhd5k 1N6467 fast recovery diode 1a trr 200ns SCPA2 1N6123 JAN 1N6463 JANTX 73A 552 PDF

    5d 3kv

    Abstract: equivalent components of diode 1N4249 Semtech alpac alpac scba2 SCPA2 single phase half controlled full wave bridge rec semtech kv-pac SI96-01 2PFT2 SCBAR4F
    Text: Semtech Corporation Power Discretes This publication presents technical information for the several product families that comprise the Semtech Corporation Power Discretes Product-Lines. The families include Hi-Rel qualified rectifiers, bridges, ceramic capacitors, transient voltage


    Original     		REV9111 PD-DB-0409 5d 3kv equivalent components of diode 1N4249 Semtech alpac alpac scba2 SCPA2 single phase half controlled full wave bridge rec semtech kv-pac SI96-01 2PFT2 SCBAR4F PDF

    mur1650

    Abstract: T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount
    Text: MBRB1045 Preferred Device SWITCHMODE Power Rectifier D2PAK Surface Mount Power Package The D2PAK Power Rectifier employs the Schottky Barrier principle in a large metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and


    Original     		MBRB1045 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mur1650 T4 SOD-123 1N4004 MR2510 1N2069 SES5001 mur420 equivalent CT PR1504 equivalent for fr302 diode mur 460 switch diode A14A surface mount PDF

    A14F diode

    Abstract: DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069
    Text: MURS220T3 Preferred Device Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.


    Original     		MURS220T3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 A14F diode DIODE marking ES2D V352 DC "Transient Voltage Suppressor" diode A14A rg3j 005 SR1002 0010C 357D-01 1N2069 PDF

    equivalent components of diode 1N5399

    Abstract: diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode
    Text: MBR6045WT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		MBR6045WT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 equivalent components of diode 1N5399 diode ses5001 6A10 BL diode equivalent for fr302 diode equivalent components of diode her104 fe8b diode FE8D gi756 diode A14F diode MUR420 diode PDF

    FE16B

    Abstract: mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent
    Text: MBRP60035CTL Preferred Device POWERTAP II SWITCHMODE Power Rectifier The SWITCHMODE Power Rectifier uses the Schottky Barrier principle with a platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction —


    Original     		MBRP60035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 FE16B mbr3045pt transistor FR102 SOD-123 1N4007 sod-123 BYV43-45 BYV19-45 MUR1660CT equivalent MUR460 BL FEP16DT 0032 mur420 equivalent PDF

    stpr16

    Abstract: MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode
    Text: MURB1620CT Preferred Device SWITCHMODE Power Rectifier D2PAK Power Surface Mount Package Designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • • • •


    Original     		MURB1620CT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 stpr16 MUR480E 340L-02 PK MUR 460 BV 202 0158 1N541 AK SOT23 STPS2045 SS33 SMB A14F diode PDF

    b2545 transistor

    Abstract: TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface
    Text: MBR2535CT, MBR2545CT MBR2545CT is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection


    Original     		MBR2535CT, MBR2545CT MBR2545CT B2535, B2545 VHE205 VHE210 VHE215 VHE220 VHE2401 b2545 transistor TO220 MUR460 BYV43-45 MUR 460 0801 MR756RL MUR420 diode b2535 equivalent transistor B2535 6A10 BL diode diode A14A surface PDF

    MR2835S equivalent

    Abstract: A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502
    Text: MBR6045PT SWITCHMODE Power Rectifier The SWITCHMODE power rectifier employs the use of the Schottky Barrier principle with a Platinum barrier metal. This state-of-the-art device has the following features: http://onsemi.com • Dual Diode Construction — Terminals 1 and 3 May Be Connected


    Original     		MBR6045PT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MR2835S equivalent A14F diode 1n5404 diode FE16A MUR860 equivalent MUR1620CT MUR420 diode usd745c equivalent MBRD360 PR1502 PDF

    transistor U1620R

    Abstract: fast recovery diode ses5001 MUR1620CT equivalent PK MUR 460 DIODE PK MUR 460 transistor mbr4045pt 1N2069 MBRD360 Fast Recovery Diode, 24 Amperes, 600 Volts, Button Type STPS20h100
    Text: MUR1620CTR Preferred Device SWITCHMODE Dual Ultrafast Power Rectifier . . . designed for use in negative switching power supplies, inverters and as free wheeling diodes. Also, used in conjunction with common cathode dual Ultrafast Rectifiers, makes a single phase full–wave


    Original     		MUR1620CTR MUR1620CT VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 transistor U1620R fast recovery diode ses5001 MUR1620CT equivalent PK MUR 460 DIODE PK MUR 460 transistor mbr4045pt 1N2069 MBRD360 Fast Recovery Diode, 24 Amperes, 600 Volts, Button Type STPS20h100 PDF

    MUR1560 equivalent

    Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
    Text: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in


    Original     		MBRD835L VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 MUR1560 equivalent 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent PDF

    1n5822 trr

    Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
    Text: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		MBRD1035CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 1n5822 trr A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50 PDF

    OZ 9983

    Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
    Text: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —


    Original     		MBRB3030CTL VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 OZ 9983 mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45 PDF

    Diode 1N4007 DO-7 Rectifier Diode

    Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
    Text: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced


    Original     		MBRM120ET3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 Diode 1N4007 DO-7 Rectifier Diode FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode PDF

    mr852

    Abstract: DIODE MUR410 BA 5904 A F P RS1G footprint wave soldering MUR460 BL mur1650 BYV1945 murs160t3 smb MBRD360 TRANSISTOR 534
    Text: MBRM120LT3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced


    Original     		MBRM120LT3 VHE205 VHE210 VHE215 VHE220 VHE2401 VHE2402 VHE2403 VHE2404 VHE605 mr852 DIODE MUR410 BA 5904 A F P RS1G footprint wave soldering MUR460 BL mur1650 BYV1945 murs160t3 smb MBRD360 TRANSISTOR 534 PDF

    1N4946

    Abstract: MIL-S-19500/359 1N4942 JANTX 1N4944 1N4942 avalanche 1N4944 JTX
    Text: RECTIFIERS JAN, JANTX, & JANTXV 1N4942 JAN, JANTX, & JANTXV 1N4944 JAN, JANTX, & JANTXV 1N4946 Military Approved, 1 Amp, Fast Recovery FEATURES • Qualified to MIL-S-19500/359 • Surge Rating: 15A • PIV: to 600V • Controlled Avalanche D ESCRIPTION These fast recovery rectifiers are suitable


    OCR Scan     		1N4942 1N4944 1N4946 MIL-S-19500/359 1N4946 MIL-S-19500/359 JANTX 1N4942 avalanche 1N4944 JTX PDF

    1N4942 avalanche

    Abstract: No abstract text available
    Text: 1N4942 THRU 1N4948 MINIATURE GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER Voltage - 200 to 1000 Volts Current- 1.0 Ampere FEATURES ♦ High temperature metallurgical^ bonded con­ structed rectifiers ♦ Glass passivated cavity-free junction in D0-204AP package


    OCR Scan     		1N4942 1N4948 D0-204AP MIL-S-19500 1N4942 avalanche PDF

    12V PIV RATING DIODE

    Abstract: 1N4942 1N4944 1N4946
    Text: JAN, JANTX, & JANTXV 1N4942 JAN, JANTX, & JANTXV 1N4944 JAN, JANTX, & JANTXV 1N4946 RECTIFIERS Military Approved, 1 Amp, Fast Recovery FEATURES D E SCRIPTIO N • Q ualified to M lL-S-19500/359 • Surge Rating: 15A • P!V: to 600V These fa s t recovery rectifiers are su ita b le


    OCR Scan     		1N4942 1N4944 1N4946 MlL-S-19500/359 1N494Ã 12V PIV RATING DIODE PDF

    1n4948 Silicon Instrument

    Abstract: byw76 diodes RG3A General instrument 1n4948 byw76
    Text: FAMILIES OF GENERAL INSTRUMENT GLASS PASSIVATED RECTIFIERS Glass Passivated Silicon Diodes 0.2 to 0.4 AMPERES Types: Features: 1N483B thru 1N486B 1N645 thru 1N649 ♦ ♦ ♦ ♦ ♦ ♦ ♦ High Temperature Metallurgically Bonded High Efficiency and Rectification Radio


    OCR Scan     		1N483B 1N486B 1N645 1N649 MII-STD-202/208 from-65 1N4245 1N4249 1N5059 1N5062 1n4948 Silicon Instrument byw76 diodes RG3A General instrument 1n4948 byw76 PDF

    2u20 diode

    Abstract: 2U39 diode 1N4C07 IN6016 IN4688 1N4C03 1N4C02 HRG1000 1N1989B 1N218
    Text: CODI Semiconductor, Inc m PRODUCT CATALOG Serving the Industry for over 25 years. SILICON DIODES • • • • • • • Zener and avalanche regulator diodes Temperature compensated zener reference diodes Forward regulator diodes Low leakage diodes Voltage variable capacitors


    OCR Scan     		1-800-232-CODI 1N6003B 1N6004B 1N6005B 1N6006B 1N6007B 1N6008B 1N6009B 1N6010B 1N6011B 2u20 diode 2U39 diode 1N4C07 IN6016 IN4688 1N4C03 1N4C02 HRG1000 1N1989B 1N218 PDF