mmbd1201-1205
Abstract: 1N4454 mmbd1201
Text: 1N4454 ta Discrete POW ER & Signa l Technologies National Semiconductor" 1N4454 High Conductance Ultra Fast Diode Sourced from Process 1R. See MMBD1201-1205 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Parameter Symbol Value
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1N4454
DO-35
MMBD1201-1205
40S3T
bSD1130
1N4454
mmbd1201
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jedec Package do
Abstract: No abstract text available
Text: noNm •JEDEC Standard <Absolute maximum ratings> >f s m Part No. V rm V Vr (V) Ifm (mA) to (mA) Ip (mA) 1n 8 (A) P (mW) Tj Topr Tstg CO Cc) Cc) Package 1N4148 1N914 100 75 450 150 200 2 500 200 - 6 5 - + 200 - 6 5 — + 200 DO-35 1N4149 1N916 100 75 450
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1N4148
1N4149
1N4150
1N4151
1N4152
1N4153
1N4154
1N4446
1N4447
1N4448
jedec Package do
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diode SG22
Abstract: 1N918 1N400 diode 1N5317 1N69B 1N919 1N849 1N673 1N688 1N4141
Text: 3869720 G E N E R A L D IO D E CORP 86D 0 0 3 3 8 GENERAL DIODE CORP flb T - D E l B û b T O D DD0D33fl 3 1 T àl-à7 SILIC O N D IO D ES . . . cont’d Case Style — DO-7 'il % 9& <h r« yi o ° o TYPE 1N4B2A 1N4S3 1N463A 1N464 1N4B4A Ç90 ïO cl 30 30
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DDDD33fl
1N462A
1N463A
1N464
1N482
1N482A
1N482B
1N483
1N483A
1N483B*
diode SG22
1N918
1N400 diode
1N5317
1N69B
1N919
1N849
1N673
1N688
1N4141
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