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    1N4150 DIE Search Results

    1N4150 DIE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ISL70062SEHX/SAMPLE Renesas Electronics Corporation Radiation Hardened 10A NMOS Load Switch, DIE, /Die Waffle Pack Visit Renesas Electronics Corporation
    ISL70061SEHX/SAMPLE Renesas Electronics Corporation Radiation Hardened 10A PMOS Load Switch, DIE, /Die Waffle Pack Visit Renesas Electronics Corporation
    ISL73062SEHX/SAMPLE Renesas Electronics Corporation Radiation Hardened 10A NMOS Load Switch, DIE, /Die Waffle Pack Visit Renesas Electronics Corporation
    ISL73061SEHX/SAMPLE Renesas Electronics Corporation Radiation Hardened 10A PMOS Load Switch, DIE, /Die Waffle Pack Visit Renesas Electronics Corporation
    HS0-26CT31RH-Q Renesas Electronics Corporation Radiation Hardened Quad Differential Line Drivers, DIE, / Visit Renesas Electronics Corporation
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    1N4150 DIE Price and Stock

    Microsemi Corporation 1N4150-DIE

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 1N4150-DIE 52
    • 1 $2.8
    • 10 $2.8
    • 100 $1.05
    • 1000 $1.05
    • 10000 $1.05
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    1N4150 DIE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    1N4150

    Abstract: 1N4151 equivalent 1N4148 1n4148 die 1n4150 equivalent
    Text: 1N4148, 1N4150, 1N4151, 1N4448 1N4148, 1N4150, 1N4151, 1N4448 Ultrafast Switching Si-Planar Diodes Ultraschnelle Si-Planar-Dioden Version 2012-07-03 Max. power dissipation Max. Verlustleistung Repetitive peak reverse voltage Periodische Spitzensperrspannung


    Original     		1N4148, 1N4150, 1N4151, 1N4448 DO-35 OD-27) 1N4150 1N4151 equivalent 1N4148 1n4148 die 1n4150 equivalent PDF

    1N4148

    Abstract: 1N4448 1N4150 1N4151 1N4150 DIE LL4148 LL4150 LL4151 1N4151 equivalent 1n4150 equivalent
    Text: 1N4148, 1N4150, 1N4151, 1N4448 1N4148, 1N4150, 1N4151, 1N4448 Ultrafast Switching Si-Planar Diodes Ultraschnelle Si-Planar-Dioden Version 2011-09-23 Max. power dissipation Max. Verlustleistung Repetitive peak reverse voltage Periodische Spitzensperrspannung


    Original     		1N4148, 1N4150, 1N4151, 1N4448 DO-35 OD-27) 1N4148 1N4448 1N4150 1N4151 1N4150 DIE LL4148 LL4150 LL4151 1N4151 equivalent 1n4150 equivalent PDF

    1N4151 equivalent

    Abstract: 1n4150 1N4150 DIE 1n4150 equivalent 1n4148 die 1N4148 equivalent 1n4150 1N4148, SOD-27
    Text: 1N4148, 1N4150, 1N4151, 1N4448 1N4148, 1N4150, 1N4151, 1N4448 Ultrafast Switching Si-Planar Diodes Ultraschnelle Si-Planar-Dioden Version 2012-05-10 Max. power dissipation Max. Verlustleistung Repetitive peak reverse voltage Periodische Spitzensperrspannung


    Original     		1N4148, 1N4150, 1N4151, 1N4448 DO-35 OD-27) 1N4151 equivalent 1n4150 1N4150 DIE 1n4150 equivalent 1n4148 die 1N4148 equivalent 1n4150 1N4148, SOD-27 PDF

    1N4148 SMD

    Abstract: 1N4148 equivalent SMD diode 1N4148 SMD equivalent components of 1N4148 1N4148 diode SMD type 1n4148 die 1N4150 1N4148 J 1N4151 1N4151
    Text: 1N4148, 1N4150, 1N4151, 1N4448 1N4148, 1N4150, 1N4151, 1N4448 Ultrafast Switching Si-Planar Diodes Ultraschnelle Si-Planar-Dioden Version 2005-08-15 Max. power dissipation Max. Verlustleistung Repetitive peak reverse voltage Periodische Spitzensperrspannung


    Original     		1N4148, 1N4150, 1N4151, 1N4448 DO-35 OD-27) 1N4148 SMD 1N4148 equivalent SMD diode 1N4148 SMD equivalent components of 1N4148 1N4148 diode SMD type 1n4148 die 1N4150 1N4148 J 1N4151 1N4151 PDF

    equivalent+1n4150

    Abstract: No abstract text available
    Text: 1N4148, 1N4150, 1N4151, 1N4448 1N4148, 1N4150, 1N4151, 1N4448 Ultrafast Switching Si-Planar Diodes Ultraschnelle Si-Planar-Dioden Version 2005-08-15 Nominal Current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung Ø 1.9 50.100 V


    Original     		1N4148, 1N4150, 1N4151, 1N4448 DO-35 OD-27) equivalent+1n4150 PDF

    1n4150 equivalent

    Abstract: 1N4148 1N4150
    Text: 1N4148, 1N4150, 1N4151, 1N4448 1N4148, 1N4150, 1N4151, 1N4448 Ultrafast Switching Si-Planar Diodes Ultraschnelle Si-Planar-Dioden Version 2012-07-30 Max. power dissipation Max. Verlustleistung ±0.4 3.9 62.5 ±3 Ø 1.9 ±0.1 Ø max 0.5 Dimensions - Maße [mm]


    Original     		1N4148, 1N4150, 1N4151, 1N4448 DO-35 OD-27) 1n4150 equivalent 1N4148 1N4150 PDF

    1N4148

    Abstract: 1N4150 1N4151 1N4448 1n4148 die
    Text: 1N4148, 1N4150, 1N4151, 1N4448 Silicon Planar Diodes Silizium-Planar-Dioden Version 2004-10-01 150.300 mA Ø 1.9 Repetitive peak reverse voltage Periodische Spitzensperrspannung 3.9 62.5 Nominal current Nennstrom Glass case Glasgehäuse 50…100 V DO-35


    Original     		1N4148, 1N4150, 1N4151, 1N4448 DO-35 OD-27 1N4148 1N4150 1N4151 1N4148 1N4150 1N4151 1N4448 1n4148 die PDF

    JANS1N4150-1

    Abstract: JX4150 1N4150UB JANS1N6640US J4150 JV4150 JX-41 diode MARKING CODE jx JANS1N6640 1N4150-1
    Text: INCH-POUND MIL-PRF-19500/231M w/AMENDMENT 2 16 July 2010 SUPERSEDING MIL-PRF-19500/231M w/AMENDMENT 1 25 January 2010 SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, TYPES 1N4150-1, 1N4150UR-1, 1N4150UB, 1N4150UBCA, 1N4150UBCC, 1N4150UBD, AND 1N3600, JAN, JANTX, AND JANTXV


    Original     		MIL-PRF-19500/231M 1N4150-1, 1N4150UR-1, 1N4150UB, 1N4150UBCA, 1N4150UBCC, 1N4150UBD, 1N3600, JANS1N4150-1 JX4150 1N4150UB JANS1N6640US J4150 JV4150 JX-41 diode MARKING CODE jx JANS1N6640 1N4150-1 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N4148, 1N4150, 1N4151, 1N4448 Silizium-Planar-Dioden Silicon Planar Diodes 150.300 mA Ø 1.9 Repetitive peak reverse voltage Periodische Spitzensperrspannung 3.9 62.5 Nominal current Nennstrom Glass case Glasgehäuse 50…100 V DO-35 SOD-27 Weight approx.


    Original     		1N4148, 1N4150, 1N4151, 1N4448 DO-35 OD-27 1N4148 1N4150 1N4151 PDF

    1N3600

    Abstract: 1N4150 DIE diode 29 DIODE R3 1N4150 CMPD4150 CPD41 1n3600 die
    Text: PROCESS CPD41 Switching Diode High Current Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 20 x 20 MILS Die Thickness 8.0 MILS Anode Bonding Pad Area 6.5 x 6.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å


    Original     		CPD41 1N3600 1N4150 CMPD4150 25-August 1N3600 1N4150 DIE diode 29 DIODE R3 1N4150 CMPD4150 CPD41 1n3600 die PDF

    1N3600

    Abstract: 1N4150 DIE 1N4150 CMPD4150 CPD41 1n3600 die
    Text: PROCESS CPD41 Switching Diode High Current Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 19.7 x 19.7 MILS Die Thickness 8.0 MILS Anode Bonding Pad Area 6.5 x 6.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å


    Original     		CPD41 1N3600 1N4150 CMPD4150 22-March 1N3600 1N4150 DIE 1N4150 CMPD4150 CPD41 1n3600 die PDF

    1N3600

    Abstract: 1N4150 CMPD4150 CPD41 1n3600 die
    Text: PROCESS CPD41 Central Switching Diode TM Semiconductor Corp. High Current Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 20 x 20 MILS Die Thickness 8.0 MILS Anode Bonding Pad Area 6.5 x 6.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization


    Original     		CPD41 1N3600 1N4150 CMPD4150 1N3600 1N4150 CMPD4150 CPD41 1n3600 die PDF

    L6561 an1089

    Abstract: l6561 in boost D97IN675 D97IN680 OREGA FERRITE transformer L6561
    Text: AN1214 APPLICATION NOTE DESIGN TIPS FOR L6561 POWER FACTOR CORRECTOR IN WIDE RANGE by Cliff Ortmeyer & Claudio Adragna This application note will describe some basic steps to optimize the design of the L6561 PFC for wide range voltage input 105V- 300V while also having a broad output power range (65W - 105W). Initial


    Original     		AN1214 L6561 AN966. AN1089 L6561-based L6561 an1089 l6561 in boost D97IN675 D97IN680 OREGA FERRITE transformer PDF

    L6561 an1089

    Abstract: L6561 AN orega L6561 AN966 L6561 application L6561 application note AN1089 1N4150 AN1214 AN966
    Text: AN1214 APPLICATION NOTE DESIGN TIPS FOR L6561 POWER FACTOR CORRECTOR IN WIDE RANGE by Cliff Ortmeyer & Claudio Adragna This application note will describe some basic steps to optimize the design of the L6561 PFC for wide range voltage input 105V- 300V while also having a broad output power range (65W - 105W). Initial


    Original     		AN1214 L6561 AN966. AN1089 L6561-based L6561 an1089 L6561 AN orega L6561 AN966 L6561 application L6561 application note AN1089 1N4150 AN1214 AN966 PDF

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED CIRCUITS DATA SHEET P8xC592 8-bit microcontroller with on-chip CAN Product specification Supersedes data of January 1995 File under Integrated Circuits, IC18 1996 Jun 27 Philips Semiconductors Product specification 8-bit microcontroller with on-chip CAN


    Original     		P8xC592 P8XC592 SCA50 617021/1200/03/pp108 PDF

    marking code A09 SMD Transistor

    Abstract: APC UPS 650 CIRCUIT DIAGRAM P8XC592FF P87C592EFAA-T p8xc552 transistor P45 smd P80C592FFAA circuit diagram of UPS APC 650 P87C592EFAA smd ct3
    Text: INTEGRATED CIRCUITS DATA SHEET P8xC592 8-bit microcontroller with on-chip CAN Product specification Supersedes data of January 1995 File under Integrated Circuits, IC18 1996 Jun 27 Philips Semiconductors Product specification 8-bit microcontroller with on-chip CAN


    Original     		P8xC592 OT188 OT318 marking code A09 SMD Transistor APC UPS 650 CIRCUIT DIAGRAM P8XC592FF P87C592EFAA-T p8xc552 transistor P45 smd P80C592FFAA circuit diagram of UPS APC 650 P87C592EFAA smd ct3 PDF

    P8XC592

    Abstract: battery vb 2415 TRANSISTOR BSP 149 ec 35 transformer UPS APC rs 800 CIRCUIT diagram 1n4150 philips bs170 complement APC UPS es 750 CIRCUIT DIAGRAM p80c51 plcc 44 pin datasheet rbs 5000
    Text: INTEGRATED CIRCUITS DATA SHEET P8xC592 8-bit microcontroller with on-chip CAN Product specification Supersedes data of January 1995 File under Integrated Circuits, IC18 1996 Jun 27 Philips Semiconductors Product specification 8-bit microcontroller with on-chip CAN


    Original     		P8xC592 P8XC592 SCA50 617021/1200/03/pp108 battery vb 2415 TRANSISTOR BSP 149 ec 35 transformer UPS APC rs 800 CIRCUIT diagram 1n4150 philips bs170 complement APC UPS es 750 CIRCUIT DIAGRAM p80c51 plcc 44 pin datasheet rbs 5000 PDF

    P8XC592

    Abstract: p80c51 plcc 44 pin datasheet transistor 4F rx1a APC back UPS 1200 I2C philips multiplexer 1996 pca
    Text: INTEGRATED CIRCUITS DATA SHEET P8xC592 8-bit microcontroller with on-chip CAN Product specification Supersedes data of January 1995 File under Integrated Circuits, IC18 1996 Jun 27 Philips Semiconductors Product specification 8-bit microcontroller with on-chip CAN


    Original     		P8xC592 P8XC592 SCA50 617021/1200/03/pp108 p80c51 plcc 44 pin datasheet transistor 4F rx1a APC back UPS 1200 I2C philips multiplexer 1996 pca PDF

    diode 1N4001 specifications

    Abstract: 1N4001 general diode purpose Diode Array 1N4448 THD4001 1N4610 1N914/1N4148 THD-4148 THD4004 1N4376 THD22Q
    Text: ALLECRO MICROSYSTEMS INC bbE » • 0S0N33Í 000bS2b £10 BA LG R ELECTRICAL CHARACTERISTICS at TA = + 25°C Device Type Type Max. Description mA v (BR) Min. (V) vF Coo> 'r *rr Max. Max. @ IF Max. Max. (V) (mA) (nA) (ns) (PF) Geometry 1N3600 THD3600 General Purpose


    OCR Scan     		0S0H33fl 1N3600 THD3600 1N4001 THD4001 1N4002 THD4002 1N4003 THD4003 1N4004 diode 1N4001 specifications 1N4001 general diode purpose Diode Array 1N4448 1N4610 1N914/1N4148 THD-4148 THD4004 1N4376 THD22Q PDF

    J1 3009

    Abstract: j1 3003 KL SN 102 w1 3005 1N4150 j3003 ci dtl 302
    Text: r f' ^ > IQUALIFICATION I IREQUIREMENTS I I REMOVED I M I L - M - 3 8 5 10/33 30 June 1975 MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, D T L , FLIP FLOPS, MONOLITHIC SILICON I I N A C T I V E F OR NEW D E S I G N A F T E R D A T E OF T H I S REVISIONj This specification is approved for use by all D e p a r t ­


    OCR Scan     		MIL-M-38510/33 MIL-M-38510, MIL-M-38510/33A 705-040/H684 J1 3009 j1 3003 KL SN 102 w1 3005 1N4150 j3003 ci dtl 302 PDF

    BA100 diode

    Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
    Text: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any


    OCR Scan     		A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 BA100 diode BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17 PDF

    FD6666 diode

    Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
    Text: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5


    OCR Scan     		A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 FD6666 diode diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82 PDF

    MD4148

    Abstract: MD5614 MD5615 1N5614 MSC 1n3600 die 1N5550-1N5553 1N4001 microsemi 1N3595 MSC md4007 MD56-2
    Text: GENERAL PARAMETER RESTRICTIONS FOR 100% DICE TEST: U nm ounted dice d o n o t have the pow er ratings o f packaged devices, therefore test conditions as well as ratings m ay need to be reduced or sam pled in packaged form as described below: V p = 200 m A m axim um . A ccuracy variable above 50 m A , highly contact dependent.*


    OCR Scan     		1N8211N829 1N9351N939 1N9411N945- CZ821CZ829 CZ935CZ939 CZ941CZ945 1N61031N6137 1N61391M6173 DD6103DD6137 DD6139DD6173 MD4148 MD5614 MD5615 1N5614 MSC 1n3600 die 1N5550-1N5553 1N4001 microsemi 1N3595 MSC md4007 MD56-2 PDF

    1n4148 D035

    Abstract: BE110 1N4449 replace 1N4448 BF113 1n3600 die 1N4150 DIE
    Text: S ilicon D iodes Silicon Sw itching D iodes for C o m p u ter A pplications in D O -35 & LL-34/35 Packages Peak Inverse V olta g e ÍM IN . PIV) Type Volts M axim um A verag e R ectified C u rre n t M axim um P ow er D issipation @ 25: C (W mA M axim um


    OCR Scan     		LL-34/35 1N4156 1N4157 1N4829 1N4830 MPD200 MPD300 DO-35 1n4148 D035 BE110 1N4449 replace 1N4448 BF113 1n3600 die 1N4150 DIE PDF