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    1N414

    Abstract: No abstract text available
    Text: CYStech Electronics Corp. Spec. No. : C329LC Issued Date : 2004.06.21 Revised Date : Page No. : 1/4 500mW DO-35 Hermetically glass sealed switching diode 1N4148LC Features: ● High reliability ● High speed trr<4ns Applications: ● Extremely fast switches


    Original     		PDF C329LC 500mW DO-35 1N4148LC 1N414

    1N4148 diode

    Abstract: 1N4148L 1N4148 SOT-23 1N4148 diode SOD 80 marKing CA2 sot-23 1N4148 sod123 DIODE 1N4148 1N4148diode
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N4148 DIODE HIGH-SPEED SWITCHING DIODE „ DESCRIPTION The UTC 1N4148 is designed for high-speed switching application in hybrid thick-and thin-film circuits. The devices is manufactured by the silicon epitaxial planar process and packed


    Original     		PDF 1N4148 1N4148 1N4148L-AE3-R 1N4148G-AE3-R OT-23 1N4148L-AL3-R 1N4148G-AL3-R OT-323 1N4148L-CA2-R 1N4148G-CA2-R 1N4148 diode 1N4148L 1N4148 SOT-23 1N4148 diode SOD 80 marKing CA2 sot-23 1N4148 sod123 DIODE 1N4148diode

    1N4148 SOD-323 F

    Abstract: 1N4148 SOD-323 A 1N4148 Sot23 PACKAGE 1N4148 diode SOD 80 SOD523 1N4148 4148 SOD323 1N4148G free diode 4148 SOD-123 L1n4148
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N4148 DIODE HIGH-SPEED SWITCHING DIODE „ DESCRIPTION The UTC 1N4148 is designed for high-speed switching application in hybrid thick-and thin-film circuits. The devices is manufactured by the silicon epitaxial planar process and packed


    Original     		PDF 1N4148 1N4148 1N4148L-AE3-R 1N4148G-AE3-R OT-23 1N4148L-AL3-R 1N4148G-AL3-R OT-323 1N4148L-CA2-R 1N4148G-CA2-R 1N4148 SOD-323 F 1N4148 SOD-323 A 1N4148 Sot23 PACKAGE 1N4148 diode SOD 80 SOD523 1N4148 4148 SOD323 1N4148G free diode 4148 SOD-123 L1n4148

    1N4148G

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N4148 DIODE HIGH-SPEED SWITCHING DIODE 3 3 1 2   SOT-23 DESCRIPTION The UTC 1N4148 is designed for high-speed switching application in hybrid thick-and thin-film circuits. The devices is manufactured by the silicon epitaxial planar process and packed


    Original     		PDF 1N4148 OT-23 1N4148 OT-323 O-236) OD-123 OD-323 OD-523 1N4148G-AE3-R 1N4148G

    1N4148 diode

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N4148 DIODE HIGH-SPEED SWITCHING DIODE „ DESCRIPTION The UTC 1N4148 is designed for high-speed switching application in hybrid thick-and thin-film circuits. The devices is manufactured by the silicon epitaxial planar process and packed


    Original     		PDF 1N4148 1N4148 1N4148L 1N4148-AE3-R 1N4148L-AE3-R OT-23 1N4148-AL3-R 1N4148L-AL3-R OT-323 1N4148-CA2-R 1N4148 diode

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N4148 DIODE HIGH-SPEED SWITCHING DIODE „ DESCRIPTION The UTC 1N4148 is designed for high-speed switching application in hybrid thick-and thin-film circuits. The devices is manufactured by the silicon epitaxial planar process and packed


    Original     		PDF 1N4148 1N4148 1N4148L-AE3-R 1N4148G-AE3-R OT-23 1N4148L-AL3-R 1N4148G-AL3-R OT-323 1N4148L-CA2-R 1N4148G-CA2-R

    1N4148 diode

    Abstract: 1N4148L 1N4148 diode SOD 80 1N4148 1N4148 SOT-23 1N4148 sod123 DIODE 1N4148 Sot23 PACKAGE specifications of 1n4148 diode 1N4148 surface mount 1N4148 SOD323
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N4148 DIODE HIGH-SPEED SWITCHING DIODE „ DESCRIPTION The UTC 1N4148 is designed for high-speed switching application in hybrid thick-and thin-film circuits. The devices is manufactured by the silicon epitaxial planar process and packed


    Original     		PDF 1N4148 1N4148 1N4148L 1N4148G 1N4148-AE3-R 1N4148L-AE3-R 1N4148G-AE3-R 1N4148-AL3-R 1N4148L-AL3-R 1N4148G-AL3-R 1N4148 diode 1N4148L 1N4148 diode SOD 80 1N4148 SOT-23 1N4148 sod123 DIODE 1N4148 Sot23 PACKAGE specifications of 1n4148 diode 1N4148 surface mount 1N4148 SOD323

    1N4148 SOD-123

    Abstract: 1N4148 SOD-323 F 1N4148-G
    Text: UNISONICTECHNOLOGIESCO., LTD 1N4148 DIODE H I GH -SPEED SWI T CH I N G DI ODE ̈ DESCRI PT I ON The UTC 1N4148 is designed for high-speed switching application in hybrid thick-and thin-film circuits. The devices is manufactured by the silicon epitaxial planar process and packed


    Original     		PDF 1N4148 1N4148 1N4148L-AE3-R 1N4148G-AE3-R OT-23 1N4148L-AL3-R 1N4148G-AL3-R OT-323 1N4148L-CA2-R 1N4148G-CA2-R 1N4148 SOD-123 1N4148 SOD-323 F 1N4148-G