Untitled
Abstract: No abstract text available
Text: 1N3890 100 V - 12 A Fast Recovery Rectifier 5.20 Diodes High-Speed/Fast Recovery Di. Page 1 of 1 Enter Your Part # Home Part Number: 1N3890 Online Store 1N3890 Diodes 100 V - 12 A Fast Recovery R ectifier Transistors Enter code INTER3 at checkout.* Integrated Circuits
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1N3890
1N3890
DO-203AA
com/1n3890
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Untitled
Abstract: No abstract text available
Text: HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| l l Enter Your Part # Home Online Store ¡ Diode s ¡ Transistors ¡ Inte grate d C ircuits ¡ O ptoe le ctronics ¡ Thyristors l Products ¡ Se arch for Parts ¡ R e que st a Q uote ¡ Te st House s
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1N3890
DO-203A
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CP CLARE hg 1004
Abstract: 1N3888 UNF-2B 01903 1N3886 clare mercury-wetted relay hgp1004 1n3880r 1N3884 diode 1n3893
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 15 November 1999. INCH-POUND MIL-PRF-19500/304D 15 August 1999 SUPERSEDING MIL-S-19500/304C 6 June 1989 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY
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MIL-PRF-19500/304D
MIL-S-19500/304C
1N3885,
1N3886,
1N3888,
1N3890,
1N3891,
1N3893,
1N3890R,
1N3891R,
CP CLARE hg 1004
1N3888
UNF-2B
01903
1N3886
clare mercury-wetted relay
hgp1004
1n3880r
1N3884
diode 1n3893
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Untitled
Abstract: No abstract text available
Text: 1N3889 thru 1N3893R Silicon Fast Recovery Diode VRRM = 50 V - 400 V IF = 12 A Features • High Surge Capability • Types up to 400 V VRRM DO-4 Package Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode. 3. Stud is base. Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
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1N3889
1N3893R
1N3889
1N3890
1N3891
1N3892
1N3893
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msc stud diode
Abstract: 1N3891 1N3893 1N3891A JANTX microsemi
Text: 1N3889 – 1N3891, 1N3893 Available on commercial versions Qualified Levels*: JAN, JANTX, and JANTXV FAST RECOVERY RECTIFIERS Qualified per MIL-PRF-19500/304* DESCRIPTION This 1N3889 – 1N3891 and 1N3893 family of rectifier devices are suitable for applications in
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1N3889
1N3891,
1N3893
MIL-PRF-19500/304*
1N3891
1N3893
FED-STD-H28
T4-LDS-0143,
msc stud diode
1N3891A JANTX microsemi
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Untitled
Abstract: No abstract text available
Text: 1N3889 thru 1N3893R Silicon Fast Recovery Diode VRRM = 50 V - 400 V IF = 12 A Features • High Surge Capability • Types up to 400 V VRRM DO-4 Package • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode.
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1N3889
1N3893R
1N3889
1N3890
1N3891
1N3892
1N3893
DO-203AA)
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Untitled
Abstract: No abstract text available
Text: 1N3889 thru 1N3893R Silicon Fast Recovery Diode VRRM = 50 V - 400 V IF = 12 A Features • High Surge Capability • Types up to 400 V VRRM DO-4 Package Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity R : Stud is anode. 3. Stud is base. Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
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1N3889
1N3893R
1N3889
1N3890
1N3891
1N3892
1N3893
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Untitled
Abstract: No abstract text available
Text: 1N3889 R THRU 1N3893(R) DACO SEMICONDUCTOR CO., LTD. Features FAST RECOVERY DIODES STUD TYPE 12A High Surge Capability 12Amp Rectifier 50-400 Volts Types Up to 400V VRRM DO-4 B Maximum Ratings N Operating Temperature: -65 C to +150 Storage Temperature: -65 C to +175
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1N3889
1N3893
12Amp
1N3890
1N3891
1N3892
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solitron rectifier
Abstract: NS6002 NS6000 NS12006 NS6001 NS30001
Text: rectifiers 21 FAST SWITCHING Medium Power Fast Recovery Double-Diffused Silicon Rectifier Diodes (6A Series) CASE STYLE J Jedec Type Solitron Part Numbers PIV Jedec Type 1N3879 NS6000 50 1N3909 NS30000 50 1N3880 NS6001 100 1N3910 NS30001 100 1N3881 NS6002
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1N3879
1N3880
1N3881
1N3882
1N3883
NS6000
NS6001
NS6002
NS6003
NS6004
solitron rectifier
NS12006
NS30001
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tt 3043
Abstract: cp clare relay hg 1002 sol 4011 be 1N3888 clare mercury-wetted relay 1n3884 1N3890 clare mercury relay z037 1N3885
Text: MIL SPECS I C J Q C m a i H S OODBTOS 1 | MIL-S-19500/304B AMENDMENT 3 11 Auqust 1987 WOTSTDTfre-AMENDMENT 2 8 July 1985 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST-RECOVERY TYPES 1N3885, 1N3886, 1N3888, 1N3890, 1N3891, 1N3893,
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MIL-S-19500/304B
1N3885,
1N3886,
1N3888,
1N3890,
1N3891,
1N3893,
1N3890R,
1N3891R,
1N3893R
tt 3043
cp clare relay hg 1002
sol 4011 be
1N3888
clare mercury-wetted relay
1n3884
1N3890
clare mercury relay
z037
1N3885
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diode 1n4017
Abstract: 1N4017 1N3819 1N4018 in3997 1N4022 1N4027 1N3985 IN3996 1n4000 DIODE
Text: Zener Type No. 1N 3815 1 N 3816 1N3817 1N3818 1N3819 1N3820 1N3821 1N3822 1N3823 "IN 3824“ " 1N3825 1N3826 1N3827 1N3828 1N3829 1N3830 Type No 1N3879 1N3880 1N3881 1N3882 1N3883 I N 3889 1N3890 1N3891 1N3892 1N3893 Zener Type No. Zener Voltage at ZT Volts
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1N3815
1N3816
1N3817
2EZ120D
2EZ130D
2EZ150D
1N3818
1N3819
1N3820
2EZ160D
diode 1n4017
1N4017
1N4018
in3997
1N4022
1N4027
1N3985
IN3996
1n4000 DIODE
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IN3889
Abstract: 1N3819 equivalent 1N3997 equivalent 1N3985 1N402 1N4022 1N3815 1N3817 1N3818 1N3820
Text: Zener Type No. 1N 3815 1 N 3816 1N3817 1N3818 1N3819 1N3820 1N3821 1N3822 1N3823 "IN 3824“ " 1N3825 1N3826 1N3827 1N3828 1N3829 1N3830 Type No 1N3879 1N3880 1N3881 1N3882 1N3883 I N 3889 1N3890 1N3891 1N3892 1N3893 Zener Type No. Zener Voltage at ZT Volts
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1N3815
1N3816
1N3817
2EZ120D
2EZ130D
2EZ150D
1N3818
1N3819
1N3820
2EZ160D
IN3889
1N3819 equivalent
1N3997 equivalent
1N3985
1N402
1N4022
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IN3826
Abstract: 1N402 1N4022 IN3880 1N4017 1N4020 in4017 IN3826A 1N4018 diode IN4000
Text: Zener Type No. 1N 3815 1 N 3816 1N3817 1N3818 1N3819 1N3820 1N3821 1N3822 1N3823 "IN 3824“ " 1N3825 1N3826 1N3827 1N3828 1N3829 1N3830 Type No 1N3879 1N3880 1N3881 1N3882 1N3883 I N 3889 1N3890 1N3891 1N3892 1N3893 Zener Type No. Zener Voltage at ZT Volts
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1N3815
1N3816
1N3817
2EZ120D
2EZ130D
2EZ150D
1N3818
1N3819
1N3820
2EZ160D
IN3826
1N402
1N4022
IN3880
1N4017
1N4020
in4017
IN3826A
1N4018
diode IN4000
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diode 1n4017
Abstract: 1N4027 s 8050 d 331 1N401 DIODE 1N4022 1N4022 1N3815 1N3816 1N3817 1N3820
Text: Zener Type No. 1N 3815 1 N 3816 1N3817 1N3818 1N3819 1N3820 1N3821 1N3822 1N3823 "IN 3824“ " 1N3825 1N3826 1N3827 1N3828 1N3829 1N3830 Type No 1N3879 1N3880 1N3881 1N3882 1N3883 I N 3889 1N3890 1N3891 1N3892 1N3893 Zener Type No. Zener Voltage at ZT Volts
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1N3815
1N3816
1N3817
2EZ120D
2EZ130D
2EZ150D
1N3818
1N3819
1N3820
2EZ160D
diode 1n4017
1N4027
s 8050 d 331
1N401
DIODE 1N4022
1N4022
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1N3893
Abstract: ds662 1N3889 c738 1N3890 1N3891 1N3892 56295A
Text: N AMER PHILIPS/DISCRETE □ LE D fabsa^i 0011715 a 1N3889 to 1N3893 T - 0 3 - J7 FAST SOFT-RECOVERY RECTIFIER DIODES Silicon diodes, each in a DO-4 metal envelope, featuring non-snap-off characteristics, and intended for use in high-frequency power supplies, th yristo r inverters and multi-phase power rectifie r applications.
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1N3889
1N3893
T-03-I7
1N3889,
1N3890,
1N3891,
1N3892
1N3893.
1N3890
1N3893
ds662
c738
1N3891
56295A
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IN3889-IN3893
Abstract: 1n3890 diode 1N3891 B137 1N3889 1N3890 1N3892 1N3893 "current reference"
Text: S E H I T R O N . INDUSTRIES LTD M3E D • S i a ? » 1 000018t, è B S L C B IN3889-IN3893 SERIES T - < B - n Fast Recovery Rectifier 12 Amp Silicon Diode FEATURES ■ Hermetically sealed D04 ■ Recovery time 200 nS ■ Low overshoot current .45") 11.5
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IN3889-IN3893
7/16th
S010A
14nSec,
1n3890 diode
1N3891
B137
1N3889
1N3890
1N3892
1N3893
"current reference"
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A1W TRANSISTOR
Abstract: N4001 diode a39 diode a1w* transistor DIODE 1N1343 A1W diode 1N5815 Diode diode 1N5825 TRANSISTOR A52 1N4822
Text: 2TC 000 98 2848352 DIODE TRA NSI ST OR CO INC 7^-0/- O/ E T m T 5fl4fl3SE ODDODTfl h RECTIFIERS DEVICES PKG DEVICES PKG DEVICES PKG DEVICES PKG DEVICES PKG 1N 1183 1N1185 1N1185A 1N 1186 1N 1186A 1N 1187 1N1187A 1N1188 1N1188A 1N 1190 1N 1200 1N1200A 1N1201
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403SE
1N1183
1N1615
1N3743
1N4006
1N5002
1N1185
1N1616
1N3744
1N4007
A1W TRANSISTOR
N4001 diode
a39 diode
a1w* transistor
DIODE 1N1343
A1W diode
1N5815 Diode
diode 1N5825
TRANSISTOR A52
1N4822
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56295A
Abstract: 1N3889 1N3890 1N3891 1N3892 1N3893 IEC134 C738
Text: N AMER PHILIPS/DISCRETE tbS3T31 0G11715 fl □ LE D 1N3889 to 1N3893 T ~ 0 3 - 17 FAST SOFT-RECOVERY RECTIFIER DIODES Silicon diodes, each in a DO-4 metal envelope, featuring non-snap-off characteristics, and intended for use in high-frequency power supplies, th yristo r inverters and multi-phase power rectifie r applications.
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1N3889
1N3893
T-03-17
1N3889,
1N3890
1N3891,
1N3892
1N3893.
56295A
1N3891
IEC134
C738
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Untitled
Abstract: No abstract text available
Text: 8 3 6 8 6 0 2 SOL ITRON D E V I C E S INC 95D 0291 3 D 7"— J re » ? Devices, Inc MEDIUM TO HIGH VOLTAGE CHIP NUMBER PN EPITAXIAL PLANAR POW ER DIODE CONTACT METALLIZATION Anode: > 50,000 À Aluminum Cathode: Gold (Polished silicon or "Chrome Nickel Silver" also available
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457mm)
1N3889,
1N3890,
1N3891,
1N3892
C-122
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Untitled
Abstract: No abstract text available
Text: S E H I T R O N . INDUSTRIES LTD M3E D • S i a ? » 1 000018t, è B S L C B T-<B-n IN3889-IN3893 SERIES Fast Recovery Rectifier 12 Amp Silicon Diode FEATURES ■ Hermetically sealed D04 ■ Recovery time 200 nS ■ Low overshoot current .45") 11.5 max
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000018t,
IN3889-IN3893
7/16th
DO-35
DO-15
DO-201AD
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1N3891 equivalent
Abstract: 12v diode 10A
Text: -Jolìtrm i Devices. Inc. [^ @QJJ©T ©ATTM, ' MEDIUM TO HIGH VOLTAGE CHIP N UM BER PINI EPITAXIAL PLANAR POWER DIODE CONTACT METALLIZATION Anode: > 50,000 A Aluminum Cathode: Gold Polished silicon or "Chrome Nickel Silver" also available Also available on:
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457mm)
1N3889,
1N3890,
1N3891,
1N3892
C-122
1N3891 equivalent
12v diode 10A
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1N3889
Abstract: 1N3890 1N3891 1N3892 12v diode 10A
Text: ^Æ ittran ra E> !J Tr © ÄTTÄIL©( MEDIUM TO HIGH VOLTAGE Devices. Inc. CHIP NUMBER PN EPITAXIAL PLANAR POWER DIODE CONTACT METALLIZATION Anode: > 50,000 A Aluminum Cathode: Gold (Polished silicon or "Chrome Nickel Silver" also available) Also available on:
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457mm)
1N3889,
1N3890,
1N3891.
1N3892
C-122
1N3889
1N3890
1N3891
12v diode 10A
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BYV 200
Abstract: BYV 200v FZJ 101 BYX61-200 BYW 200 BYX61-400 99P-200 77P-200 BYX65-400 BYV 35 C
Text: SGS-THOMSON ^/^7#7 raoœmimMogs GENERAL PURPOSE & INDUSTRIAL RECTIFIER DIODES HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES Continued VR R M = 50,100,150, 200 V Type t rr max 35.80 ns ' r /v r r m Tj 100°C max (mA) *rr (1) max (ns) Package 1 35 TO 220
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BYW77P-
77P-100
77P-150
77P-200
77PI-150
77PI-200
BYW99P-
99P-100
99P-150ng
BYX61-100
BYV 200
BYV 200v
FZJ 101
BYX61-200
BYW 200
BYX61-400
99P-200
BYX65-400
BYV 35 C
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I2FL40S02
Abstract: I2FL20S02
Text: Fast Recovery Diodes International IOR Rectifier VfM M •fsm Part VRRM V Number I Fa v @ t c (A) (C) SO Hz (A) 60Hz (A) 1F(AV) (V) R JC (°C/W) t„ (nS) Notes Fox on Demand Number Outline Key Discrete I2FLI0SO2 100 12 100 145 150 1 40 2.0 200 2 5 3 4
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I2FLI0S05
I2FL20S02
12FL20S05
I2FL40S02
I2FL40S05
12FL60S02
I2FL60S05
12FL80S05
IN3889
1N3890
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