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    1N3670A SERIES Search Results

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    1N3670A SERIES Datasheets (1)

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    1N3670A Series International Rectifier 13 AM MEDIUM POWER SILICON RECTIFIER DIODES Scan PDF

    1N3670A SERIES Datasheets Context Search

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    1nu9

    Abstract: 1N1199A 1N1200A 1N1201A 1N1202A 1N3670A international rectifier silicon rectifier D0203AA
    Text: INTERNATIONAL RECTIFIER 4855452 SS INTERNATIONAL l&ÊTJ MÖSS4S5 0004^53 55 C R EC TIFIER 04923 D Data Sheet No. PD-2.084 T - o t ~ /7 INTERNATIONAL RECTIFIER I O R A ,nN3 B-7 0 A S E R IE S 1S Amp Medium Power Silicon Rectifier Diodes D escription/Features


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    1N1199A, 1N3B-70A 1N1199A 1N3670A L-S-19500/260 1nu9 1N1200A 1N1201A 1N1202A international rectifier silicon rectifier D0203AA PDF

    1N1199A

    Abstract: 1N1200A 1N1202A 1N1203A 1N1204A 1N1205A 1N1206A 1N3670A 10-32UMF-2A 1N3670A Series
    Text: Data Sheet No. PD-2.084 IN T E R N A T IO N A L R E C T IF I E R 1N 1 1 9 9 A , 1N 3 B 7 a A lion I S E R IE S I E A m p M edium P o w er Silicon R e c t if ie r Diodes Major Ratings and Characteristics @ 50 HZ @ 60 Hj Description/Features • Voltage rati ngs from 50 to 1,000 volts


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    1N11S9A, 1N3670A MIL-S-19500/260 10-32UMF-2A 1N1199A, 1N1199A 1N1200A 1N1202A 1N1203A 1N1204A 1N1205A 1N1206A 10-32UMF-2A 1N3670A Series PDF

    1N36

    Abstract: 1N1199A 1N1200A 1N1201A 1N1202A 1N1203A 1N1204A 1N1205A 1N1206A DO-203AA
    Text: 1N1.A, 1N36.A Series Vishay High Power Products Medium Power Silicon Rectifier Diodes, 12 A FEATURES • Voltage ratings from 50 to 1000 V RoHS • High surge capability COMPLIANT • Low thermal impedance • High temperature rating • Can be supplied as JAN and JAN-TX devices in


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    MIL-S-19500/260 DO-203AA 18-Jul-08 1N36 1N1199A 1N1200A 1N1201A 1N1202A 1N1203A 1N1204A 1N1205A 1N1206A DO-203AA PDF

    UNF-2A

    Abstract: 1N36
    Text: 1N1.A, 1N36.A Series Vishay High Power Products Medium Power Silicon Rectifier Diodes, 12 A FEATURES • Voltage ratings from 50 to 1000 V RoHS • High surge capability COMPLIANT • Low thermal impedance • High temperature rating • Can be supplied as JAN and JAN-TX devices in


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    MIL-S-19500/260 DO-203AA 11-Mar-11 UNF-2A 1N36 PDF

    1N1199A

    Abstract: 1N1200A 1N1201A 1N1202A 1N1203A 1N1204A 1N1205A 1N1206A 1N36 DO-203AA
    Text: 1N1.A, 1N36.A Series Vishay High Power Products Medium Power Silicon Rectifier Diodes, 12 A FEATURES • Voltage ratings from 50 to 1000 V RoHS • High surge capability COMPLIANT • Low thermal impedance • High temperature rating • Can be supplied as JAN and JAN-TX devices in


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    MIL-S-19500/260 DO-203AA 11-Mar-11 1N1199A 1N1200A 1N1201A 1N1202A 1N1203A 1N1204A 1N1205A 1N1206A 1N36 DO-203AA PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N1.A, 1N36.A Series Vishay High Power Products Medium Power Silicon Rectifier Diodes, 12 A FEATURES • Voltage ratings from 50 to 1000 V RoHS • High surge capability COMPLIANT • Low thermal impedance • High temperature rating • Can be supplied as JAN and JAN-TX devices in


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    MIL-S-19500/260 DO-203AA 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    IOR 5250

    Abstract: 1N1183A IN1183 1N212BA IOR 136 1N1183 1N2128A 1N3765 1N11B3 N1190
    Text: Data Sheet No. PD-2.087 INTERNATIONAL RECTIFIER llORl 1N11S3, 1N3765, 1N1183A, 1N2128A SERIES 3 5 , 4 0 and 6 0 Amp Power Silicon Rectifier Diodes Description and Features Major Ratings and Characteristics ' f îAVi 1N1183 1N3765 1N1183A 35* 35* 40* 1N2128A Units


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    1N11B3, 1N3765, 1N11S3A, 1N212BA 1N1183 1N3765 1N1183A 1N2128A IOR 5250 IN1183 IOR 136 1N11B3 N1190 PDF

    1N36

    Abstract: 1n1199
    Text: 1N1.A, 1N36.A Series Vishay High Power Products Medium Power Silicon Rectifier Diodes, 12 A FEATURES • Voltage ratings from 50 to 1000 V RoHS • High surge capability COMPLIANT • Low thermal impedance • High temperature rating • Can be supplied as JAN and JAN-TX devices in


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    MIL-S-19500/260 DO-203AA 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 1N36 1n1199 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N1.A, 1N36.A Series www.vishay.com Vishay Semiconductors Medium Power Silicon Rectifier Diodes, 12 A FEATURES • Voltage ratings from 50 V to 1000 V • High surge capability • Low thermal impedance • High temperature rating • Can be supplied as JAN and JAN-TX devices in


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    MIL-S-19500/260 DO-203AA 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N1.A, 1N36.A Series www.vishay.com Vishay Semiconductors Medium Power Silicon Rectifier Diodes, 12 A FEATURES • Voltage ratings from 50 V to 1000 V • High surge capability • Low thermal impedance • High temperature rating • Can be supplied as JAN and JAN-TX devices in


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    MIL-S-19500/260 DO-203AA 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    1N1115

    Abstract: 1N255 MR1121 1N1118 1N1540 1N254 1N1116 MR1120R 1N1117 1N611
    Text: MR1 120 th ru MR1 126 SILICON MR1128 MR1130 Medium-current silicon rectifiers featurehigh surge current capacity, and low forward voltage drop. CASE 245 (DO-4) M A X IM U M R A T IN G S Rating Symbol MR MR MR MR MR MR MR MR MR 1120 1121 1122 1123 1124 1125 1126 1128 1130


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    MR1128 MR1130 Curre41A 1N349 1N551 1N611 1N553 1N1127A 1N1128 1N3671A 1N1115 1N255 MR1121 1N1118 1N1540 1N254 1N1116 MR1120R 1N1117 PDF

    SCR Handbook, General electric

    Abstract: A78A GE SCR 1000 AMP SCR Applications Handbook 1N1612 1N5331 SCR Handbook in3988 GE A28B
    Text: RECTIFIERS l_ F 5 TO 12 AMPERES JEDIEC GETYPES SPECIFICATIONS Tc = VRM rep vo|tage7v, •f m (a v 1 N 1 6 1 2 -1 6 m 1 N 3 9 8 7 -9 0 1 N 3 8 7 9 -8 3 - _ - m 1 N 1 1 9 9 A -1 2 0 6 A 1 N 3 6 7 0 A -7 3 A 1N 5331 1 N 3 8 8 9 -9 3 - 1 N 4 5 1 0 -1 1 A28 '*


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    1N1612-16 1N1341A-48A 1N3987-90 1N3879-83 1N1199A-1206A 1N3670A-73A 1N5331 1N3889-93 1N4510-11 1N1612 SCR Handbook, General electric A78A GE SCR 1000 AMP SCR Applications Handbook SCR Handbook in3988 GE A28B PDF

    SCR gate drive circuit

    Abstract: an 80771 IN1190 IN1190A IN1190A diode 20509 Diode 31DQ HFA25TB60 SD400N IR 31DQ 03
    Text: Revised 8/27/98 www.irf.com Rectifiers / Thyristors Catalog of Availble Documents IR ProCenter Fax-On-Demand 310 252-7100 Standard Recovery Diodes Description Datasheets 1N1183 - IN1190 Series 1N1183A - IN1190A Series 1N1199A - 1N1206A Series 1N2054 thru 1N2068 Series


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    1N1183 IN1190 1N1183A IN1190A 1N1199A 1N1206A 1N2054 1N2068 1N3085 -1N3092 SCR gate drive circuit an 80771 IN1190A diode 20509 Diode 31DQ HFA25TB60 SD400N IR 31DQ 03 PDF

    IN1190A diode

    Abstract: an 80771 hfa30pa60 SCR gate drive circuit A6F diode HFA120FA60 HF50A060 IN1190 DT93-1 HFA16PB120
    Text: Revised 5/11/99 www.irf.com Rectifiers / Thyristors Catalog of Available Documents IR ProCenter Fax-On-Demand 310 252-7100 Standard Recovery Diodes Description Datasheets 1N1183 - IN1190 Series 1N1183A - IN1190A Series 1N1199A - 1N1206A Series 1N2054 thru 1N2068 Series


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    1N1183 IN1190 1N1183A IN1190A 1N1199A 1N1206A 1N2054 1N2068 1N3085 -1N3092 IN1190A diode an 80771 hfa30pa60 SCR gate drive circuit A6F diode HFA120FA60 HF50A060 DT93-1 HFA16PB120 PDF

    Untitled

    Abstract: No abstract text available
    Text: STANDARD RECOVERY RECTIFIERS STUD BASE DO-4 & DO-5 lQ RATING TO 60 AMPS FEATURES: DESCRIPTION • Hermetic Seal This is a series of general purpose rectifiers with average forward current ratings up to 60 Amps. They are for general purpose use in power supply and other rectification applications.


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    1N253 1N254 1N255 1N256 1N332 1N333 1N334 1N335 1N336 1N337 PDF

    1N3610

    Abstract: 1N1118 1N2222 1N1502 1N1120 1N39 1N12068 HA 12058 1N1119 1N1227
    Text: STANDARD RECOVERY RECTIFIERS STUD BASE DO-4 & DO-5 lQ RATING TO 60 AMPS FEATURES: DESCRIPTION • Hermetic Seal • High Temperature Operation • Metallurgical^ Bonded This is a series of general purpose rectifiers with average forward current ratings up to 60 Amps. They are for general purpose use in


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    1N253 1N254 1N255 1N256 1N332 1N333 1N334 1N335 1N336 1N337 1N3610 1N1118 1N2222 1N1502 1N1120 1N39 1N12068 HA 12058 1N1119 1N1227 PDF

    SM4007TR SMB

    Abstract: SM4001TR 70HF120 82087 INT-A-PAK diode SM4007TR 70HA120 70HA140 SD300C32 16F40
    Text: International Rectifier Diodes V RRM Part Number V I @T F(AV) C (A) (°C) V @ FM I FM (V) (A) I FSM 50 Hz 60 Hz (A) (A) R ΘJC (DC) °C/W Notes Fax-on-Demand D2Pak Standard Recovery D2Pak 10ETS08S 10ETS12S 800 1200 10 10 105 105 1.1 1.1 10 10 170 170 175


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    10ETS08S 10ETS12S 10ETS16S 20ETS08S 20ETS12S 20ETS16S 8EWS08S 8EWS12S 8EWS16S O-220AC SM4007TR SMB SM4001TR 70HF120 82087 INT-A-PAK diode SM4007TR 70HA120 70HA140 SD300C32 16F40 PDF

    sm4001tr

    Abstract: DO-203AB Package SD1500C20L SM4004TR SM4007TR SMB T70HF100 25F80 85hf120 85hf80 IRKE91-10
    Text: International Rectifier Diodes V RRM Part Number V I @T F(AV) C (A) (°C) V @ FM I FM (V) (A) I FSM 50 Hz 60 Hz (A) (A) R ΘJC (DC) °C/W Notes Fax-on-Demand D2Pak Standard Recovery D2Pak 10ETS08S 10ETS12S 800 1200 10 10 105 105 1.1 1.1 10 10 170 170 175


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    10ETS08S 10ETS12S 10ETS16S 20ETS08S 20ETS12S 20ETS16S 8EWS08S 8EWS12S 12FR100 6F10M, sm4001tr DO-203AB Package SD1500C20L SM4004TR SM4007TR SMB T70HF100 25F80 85hf120 85hf80 IRKE91-10 PDF

    T35W

    Abstract: transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d
    Text: NEW PRODUCTS BULLETIN SINGLE-ENDED MOLDED BRIDGES Fig. 1 International Rectifier expands its quality line of highly reliable molded \ bridges with the new 10DB series of 1 amp full-wave silicon bridge rectifiers. The single-ended, in-line configuration is suitable for PC board applications,


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    10DB2P 10DB4P 10DB6P 180B6A T35W transistor kt 606A 65e9 transistor sr 6863 D 2SC965 CS9011 sr1k diode KT850 TRANSISTOR st25a transistor 130001 8d PDF

    powec rm 1110

    Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
    Text: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor


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    111ii MZ5558 Z5555, Z5556, MZ5557 powec rm 1110 rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor PDF

    160MT160K

    Abstract: bridge rectifier 1BQ40 IRKD56-12 10RIA10 35MB40A 26MT20 P403W ST330C12L0 P101W 26MB80A
    Text: Index International Rectifier Bridges V RRM Part Number V I O (A) @T C (°C) V @ FM I FM (V) (A) I FSM 50 Hz 60 Hz (A) (A) R ΘJC K/W I RM (µA) Notes Fax-on-Demand Single Phase D-70 Schottky D-70 1BQ20 1BQ40 20 40 1 1 45 45 0.65 0.65 1 1 30 30 31 31 60


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    1BQ20 1BQ40 DF005S DF01S DF02S DF04S DF06S DF08Snge 82RIA40 ST180S04P2V 160MT160K bridge rectifier 1BQ40 IRKD56-12 10RIA10 35MB40A 26MT20 P403W ST330C12L0 P101W 26MB80A PDF

    hep 154 silicon diode

    Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
    Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This


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    MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp PDF

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    PDF

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


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    11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680 PDF