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    1N3600 DIE Search Results

    1N3600 DIE Result Highlights (5)

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    HMC8410CHIPS-SX Analog Devices Die Sales Visit Analog Devices Buy
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    HMC8401-SX Analog Devices Die Sales- 2 die pack Visit Analog Devices Buy
    HMC459-SX Analog Devices I.C., amp Die Visit Analog Devices Buy
    HMC404-SX Analog Devices I.C., 30GHz IRM, Die Visit Analog Devices Buy
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    1N3600 DIE Price and Stock

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    Quest Components 1N3600-DIE 72
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    1N3600 DIE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    JANS1N4150-1

    Abstract: JX4150 1N4150UB JANS1N6640US J4150 JV4150 JX-41 diode MARKING CODE jx JANS1N6640 1N4150-1
    Text: INCH-POUND MIL-PRF-19500/231M w/AMENDMENT 2 16 July 2010 SUPERSEDING MIL-PRF-19500/231M w/AMENDMENT 1 25 January 2010 SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING, TYPES 1N4150-1, 1N4150UR-1, 1N4150UB, 1N4150UBCA, 1N4150UBCC, 1N4150UBD, AND 1N3600, JAN, JANTX, AND JANTXV


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    PDF MIL-PRF-19500/231M 1N4150-1, 1N4150UR-1, 1N4150UB, 1N4150UBCA, 1N4150UBCC, 1N4150UBD, 1N3600, JANS1N4150-1 JX4150 1N4150UB JANS1N6640US J4150 JV4150 JX-41 diode MARKING CODE jx JANS1N6640 1N4150-1

    1N3600

    Abstract: 1N4150 DIE diode 29 DIODE R3 1N4150 CMPD4150 CPD41 1n3600 die
    Text: PROCESS CPD41 Switching Diode High Current Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 20 x 20 MILS Die Thickness 8.0 MILS Anode Bonding Pad Area 6.5 x 6.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å


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    PDF CPD41 1N3600 1N4150 CMPD4150 25-August 1N3600 1N4150 DIE diode 29 DIODE R3 1N4150 CMPD4150 CPD41 1n3600 die

    1N3600

    Abstract: 1N4150 DIE 1N4150 CMPD4150 CPD41 1n3600 die
    Text: PROCESS CPD41 Switching Diode High Current Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 19.7 x 19.7 MILS Die Thickness 8.0 MILS Anode Bonding Pad Area 6.5 x 6.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å


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    PDF CPD41 1N3600 1N4150 CMPD4150 22-March 1N3600 1N4150 DIE 1N4150 CMPD4150 CPD41 1n3600 die

    1N3600

    Abstract: 1N4150 CMPD4150 CPD41 1n3600 die
    Text: PROCESS CPD41 Central Switching Diode TM Semiconductor Corp. High Current Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 20 x 20 MILS Die Thickness 8.0 MILS Anode Bonding Pad Area 6.5 x 6.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization


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    PDF CPD41 1N3600 1N4150 CMPD4150 1N3600 1N4150 CMPD4150 CPD41 1n3600 die

    GR712RC

    Abstract: UT700 melf ZENER diode COLOR CODE 5962R102 smd zener diode color code UT8QNF8M HDMI verilog BCH RTAX2000 UT54ACS164245 "HARMONIC DRIVE"
    Text: A passion for performance. Aeroflex Microelectronic Solutions Digital, Analog, Power, RFMW, Motion…Solutions for HiRel Applications Product Short Form December 2012 Aeroflex Microelectronic Solutions Product Short Form Aeroflex Microelectronic Solutions is comprised of ten divisions – Colorado Springs, Gaisler, Motion


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    5962-94758

    Abstract: em 242 stepper 12V SM 39 Z 2 STEPPER MOTOR 5962-1320101KXC RTAX2000 UT16AD40P GR712RC Metelics 2006 catalog RHD5932 stepper motor em 242
    Text: A passion for performance. Aeroflex Microelectronic Solutions Digital, Analog, Power, RFMW, Motion…Solutions for HiRel Applications Product Short Form January 2014 Aeroflex Microelectronic Solutions Product Short Form Aeroflex Microelectronic Solutions – Colorado Springs, Gaisler, Microwave Filter Components,


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    UT16AD40P

    Abstract: RHD5932 RHD5930
    Text: A passion for performance. Aeroflex Microelectronic Solutions Digital, Analog, Power, RFMW, Motion…Solutions for HiRel Applications Product Short Form January 2014 Aeroflex Microelectronic Solutions Product Short Form Aeroflex Microelectronic Solutions – Colorado Springs, Gaisler, Microwave Filter Components,


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    EM-553 motor

    Abstract: UT16AD40P BUS-8553 CD4583 spw 068 power supply spw 068 UT8QNF8M UT63M143 rtax2000 UT0.6uCRH
    Text: A passion for performance. Aeroflex Microelectronic Solutions Digital, Analog, Power, RFMW, Motion…Solutions for HiRel Applications Product Short Form January 2012 Aeroflex Microelectronic Solutions Product Short Form Aeroflex Microelectronic Solutions is comprised of ten divisions – Colorado Springs, Gaisler, Motion


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    MSAN-141

    Abstract: MT8930B MSAN-128 MT8930 MT8931B sc54 motorola b1 a230
    Text: Application Note MSAN-141 Implementation Details of the MT8930B/31B S/T Interface  ISSUE 1 November 1992 Contents • 1.0 MT8930B/31B S/T-Interface Transceiver • 2.0 Access Consideration at the S/T-Interface • 3.0 System Interface • 4.0 Control Interface Port


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    PDF MSAN-141 MT8930B/31B MSAN-128, MSAN-141 MT8930B MSAN-128 MT8930 MT8931B sc54 motorola b1 a230

    LBIT 204

    Abstract: MSAN-128 MSAN-141 MT8930 MT8930B MT8931B Philips FA 261 A224N
    Text: Application Note MSAN-141 Implementation Details of the MT8930B/31BS/T Interface ISSUE 1 November 1992 Contents • 1.0 MT8930B/31B S/T-Interface Transceiver • 2.0 Access Consideration at the S/T-Interface • 3.0 System Interface • 4.0 Control Interface Port


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    PDF MSAN-141 MT8930B/31BS/T MT8930B/31B MSAN-128, LBIT 204 MSAN-128 MSAN-141 MT8930 MT8930B MT8931B Philips FA 261 A224N

    A224N

    Abstract: LBIT 204 SC-14 sc42 MT8930B MSAN-128 MSAN-141 MT8930 MT8931B
    Text: Application Note MSAN-141 Implementation Details of the MT8930B/31BS/T Interface ISSUE 1 November 1992 Contents • 1.0 MT8930B/31B S/T-Interface Transceiver • 2.0 Access Consideration at the S/T-Interface • 3.0 System Interface • 4.0 Control Interface Port


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    PDF MSAN-141 MT8930B/31BS/T MT8930B/31B MSAN-128, A224N LBIT 204 SC-14 sc42 MT8930B MSAN-128 MSAN-141 MT8930 MT8931B

    Untitled

    Abstract: No abstract text available
    Text: Application Note MSAN-141 Implementation Details of the MT8930B/31B S/T Interface  ISSUE 1 November 1992 Contents • 1.0 MT8930B/31B S/T-Interface Transceiver • 2.0 Access Consideration at the S/T-Interface • 3.0 System Interface • 4.0 Control Interface Port


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    PDF MSAN-141 MT8930B/31B MSAN-128,

    circuit diagram of voice recognition

    Abstract: MSAN-141 MSAN-128 MT8930 MT8930B MT8931B
    Text: Application Note MSAN-141 Implementation Details of the MT8930B/31B S/T Interface  ISSUE 1 November 1992 Contents • 1.0 MT8930B/31B S/T-Interface Transceiver • 2.0 Access Consideration at the S/T-Interface • 3.0 System Interface • 4.0 Control Interface Port


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    PDF MSAN-141 MT8930B/31B MSAN-128, circuit diagram of voice recognition MSAN-141 MSAN-128 MT8930 MT8930B MT8931B

    diode 1N4001 specifications

    Abstract: 1N4001 general diode purpose Diode Array 1N4448 THD4001 1N4610 1N914/1N4148 THD-4148 THD4004 1N4376 THD22Q
    Text: ALLECRO MICROSYSTEMS INC bbE » • 0S0N33Í 000bS2b £10 BA LG R ELECTRICAL CHARACTERISTICS at TA = + 25°C Device Type Type Max. Description mA v (BR) Min. (V) vF Coo> 'r *rr Max. Max. @ IF Max. Max. (V) (mA) (nA) (ns) (PF) Geometry 1N3600 THD3600 General Purpose


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    PDF 0S0H33fl 1N3600 THD3600 1N4001 THD4001 1N4002 THD4002 1N4003 THD4003 1N4004 diode 1N4001 specifications 1N4001 general diode purpose Diode Array 1N4448 1N4610 1N914/1N4148 THD-4148 THD4004 1N4376 THD22Q

    JAN 1N4150-1

    Abstract: JANS1N4150-1 JANS1N6640 1N3600 1N4150-1 1N4150UR-1 3pda Q033b D0213 Scans-0016000
    Text: MIL SPECS H4 E D 00G0125 Q033bfl7 [The documentationand process conversion | Imeasures necessary to comply with this | |revision shaLl be completed by 23 MAR 94. |


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    PDF D0DD125 0033bfi? MIL-S-19500/231F MIL-S-19500/231 1N3600, 1N4150-1, 1N4150UR-1 JANSIN4150-1 MIL-S-19500/609 JANS1N6640 JAN 1N4150-1 JANS1N4150-1 JANS1N6640 1N3600 1N4150-1 3pda Q033b D0213 Scans-0016000

    MD4148

    Abstract: MD5614 MD5615 1N5614 MSC 1n3600 die 1N5550-1N5553 1N4001 microsemi 1N3595 MSC md4007 MD56-2
    Text: GENERAL PARAMETER RESTRICTIONS FOR 100% DICE TEST: U nm ounted dice d o n o t have the pow er ratings o f packaged devices, therefore test conditions as well as ratings m ay need to be reduced or sam pled in packaged form as described below: V p = 200 m A m axim um . A ccuracy variable above 50 m A , highly contact dependent.*


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    PDF 1N8211N829 1N9351N939 1N9411N945- CZ821CZ829 CZ935CZ939 CZ941CZ945 1N61031N6137 1N61391M6173 DD6103DD6137 DD6139DD6173 MD4148 MD5614 MD5615 1N5614 MSC 1n3600 die 1N5550-1N5553 1N4001 microsemi 1N3595 MSC md4007 MD56-2

    1n4148 D035

    Abstract: BE110 1N4449 replace 1N4448 BF113 1n3600 die 1N4150 DIE
    Text: S ilicon D iodes Silicon Sw itching D iodes for C o m p u ter A pplications in D O -35 & LL-34/35 Packages Peak Inverse V olta g e ÍM IN . PIV) Type Volts M axim um A verag e R ectified C u rre n t M axim um P ow er D issipation @ 25: C (W mA M axim um


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    PDF LL-34/35 1N4156 1N4157 1N4829 1N4830 MPD200 MPD300 DO-35 1n4148 D035 BE110 1N4449 replace 1N4448 BF113 1n3600 die 1N4150 DIE

    CRYSTAL 20 mhZ

    Abstract: Crystal oscillator 12 MHz 130Q 1N3600 604D PCK604S
    Text: OM C HI P SEE D S YSTEMS bT' l OLi S? 0000M47 OCS SD2 PCK604 ^ 5 0 - 0 ^ 50 to 600 MHz Crystal Controlled Frequency Synthesizer OnChip Systems P R O D U C T H IG H L IG H T S 50 - 600 MHz ♦ F requency Range 50 to 6 0 0 MHz 12.5-18.75 MHz CRYSTAL ♦ Inexpensive In p u t C rystal 12.5 to


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    PDF b7104S7 PCK604 CRYSTAL 20 mhZ Crystal oscillator 12 MHz 130Q 1N3600 604D PCK604S

    BA100 diode

    Abstract: BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17
    Text: r im m i if Hill tWIBHHH ElBtlAlEHTS I SIISHIIffl IT 1 . 1. m n t IElHlllS{|iliitltrs|lfl The Grampians Shepherds Bush Road,. London W6 7NF ' ' Although every care is taken with the preparation o f this book the publishers will, not be responsible fo r any


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    PDF A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 BA100 diode BA102 AAY20 B2M1-5 1N2528 PH1021 OA210 diode DIODE AA116 BB105 GAZ17

    FD6666 diode

    Abstract: diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82
    Text: mil UIIAGHRISnCS [M IN IS i SDISlimiS BY B J . B AB A N I la TANDY CORPORATION Although every c are is taken with the p rep aration of this book the p u b lish ers will not be resp on sib le for any e r r o r s that might occur. 1975 I. S. B. N. 0 900162 46 5


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    PDF A4/10 A5/62 A5/105 A1000 AA100 AA110 AA111 AA112 AA113 AA114 FD6666 diode diode BY100 1N4Q07 BA100 diode BY164 BB139 BAY38 diode aa119 1S184 diode 1N82

    E421 fet

    Abstract: equivalent transistor e176 J2N2608 J2N3821 E112 jfet e420 dual jfet 2N390G TRANSISTOR E421 dual JFET 2N4360 equivalent transistors Teledyne Semiconductor jfet
    Text: Discretes from Teledyne Semiconductor In this catalog are listed more than 2000 high-quality diodes, bipolar transistors and JFETs available from Teledyne Semiconductor. Key specifications are included for each device and many are available w ith hi-rel processing to m ilitary specifications.


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    PDF O-72P* O-92X O-105 O-106 O-106P E421 fet equivalent transistor e176 J2N2608 J2N3821 E112 jfet e420 dual jfet 2N390G TRANSISTOR E421 dual JFET 2N4360 equivalent transistors Teledyne Semiconductor jfet

    100414DC

    Abstract: 5401DM Fairchild dtl catalog fsa2719m 4727BPC FCM7010 FCM7004 937DMQB fairchild rtl FSA2501
    Text: FAIRMONT ELECTRONICS PTY. LTD. TE L.48-6421 4 8 -6 4 8 1 /2 /4 C AB LES ' FAIRTRONICS' C R A IG H A L L T E L E X 8-3227 S A . P O .BOX 41102, C R A IG H A LL 2024. I ouani v-ox 39! 262Bramley 2018 FAIRCHILD 464 Ellis Street, M ountain View, C alifornia 94042


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    PDF 262Bramley orporation/464 962-5011/TWX 19-PIN 100414DC 5401DM Fairchild dtl catalog fsa2719m 4727BPC FCM7010 FCM7004 937DMQB fairchild rtl FSA2501

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


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    PDF OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C

    1n52408

    Abstract: 1N52428 zener SFC2311 78M12HM 21L02A 54175 IRS 9530 transistor 10116dc BB105G 962PC
    Text: Contents Fairchild Semiconductors Ltd. Solid State Scientific Inc. Diodes Ltd. Thomson C. S. F. B Ashcroft Electronics Ltd. Sprague Electric UK Ltd. Precision Dynamic Corp. B&R Relays Schrack Relays Heller mann Electric B Foreword We are pleased to present the latest edition of the BARLEC Catalogue, which


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    PDF 301PT1115 302PT1115 303PT1115 311PT1110 312PTI110 319PTI110 327PTI110 351PT1115 353PT1115 1n52408 1N52428 zener SFC2311 78M12HM 21L02A 54175 IRS 9530 transistor 10116dc BB105G 962PC