Untitled
Abstract: No abstract text available
Text: 1N 5817.1N 5819 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter .3 Axial lead diode Schottky barrier rectifiers diodes 1N 5817.1N 5819 Forward Current: 1 A
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5819 DIODE
Abstract: No abstract text available
Text: 1N 5817.1N 5819 .3 Axial lead diode Schottky barrier rectifiers diodes 1N 5817.1N 5819 Forward Current: 1 A Reverse Voltage: 20 to 40 V Features !"#$ Mechanical Data %&$' %&$"*
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Untitled
Abstract: No abstract text available
Text: 1N 5817.1N 5819 .3 Axial lead diode Schottky barrier rectifiers diodes 1N 5817.1N 5819 Forward Current: 1 A Reverse Voltage: 20 to 40 V Features !"#$ Mechanical Data %&$' %&$"*
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1N5818 SEMTECH
Abstract: 1N5817 1N5818 1N5819
Text: 1N 5817 THRU 1N 5819 SCHOTTKY BARRIER DIODES Features • Metal silicon junction, majority carrier conduction • Guarding for overvoltage protection • Low power loss, high efficiency • High current capability low forward voltage drop • High surge capability
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250oC/10
1N5817
1N5818
1N5819
50mVp-p
1N5818 SEMTECH
1N5817
1N5818
1N5819
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5819 DIODE
Abstract: No abstract text available
Text: 1N 5817.1N 5819 .3 Axial lead diode Schottky barrier rectifiers diodes 1N 5817.1N 5819 Forward Current: 1 A Reverse Voltage: 20 to 40 V Features !"#$ Mechanical Data %&$' %&$"*
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Untitled
Abstract: No abstract text available
Text: 1N 5817.1N 5819 .3 Axial lead diode Schottky barrier rectifiers diodes 1N 5817.1N 5819 Forward Current: 1 A Reverse Voltage: 20 to 40 V Features !"#$ Mechanical Data %&$' %&$"*
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5819 DIODE
Abstract: diode IN 5819 diode 5819 5819 1N 5819 diode
Text: 1N 5817.1N 5819 .3 Axial lead diode Schottky barrier rectifiers diodes 1N 5817.1N 5819 Forward Current: 1 A Reverse Voltage: 20 to 40 V Features !"#$ Mechanical Data %&$' %&$"*
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1N5817
Abstract: 1N5818 1N5819
Text: 1N 5817 THRU 1N 5819 SCHOTTKY BARRIER DIODES Features • Metal silicon junction, majority carrier conduction • Guarding for overvoltage protection • Low power loss, high efficiency • High current capability low forward voltage drop • High surge capability
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250oC/10
1N5817
1N5818
1N5819
50mVp-p
1N5817
1N5818
1N5819
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1N5817
Abstract: 1N5818 1N5819
Text: 1N 5817 THRU 1N 5819 SCHOTTKY BARRIER DIODES Features • Metal silicon junction, majority carrier conduction • Guarding for overvoltage protection • Low power loss, high efficiency • High current capability low forward voltage drop • High surge capability
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250oC/10
1N5817
1N5818
1N5819
50mVp-p
1N5817
1N5818
1N5819
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1n5819 trr
Abstract: Khandelwal Herrmann Electronics 1N5817 1N5819 202E SR120 SR180 1n5817 trr
Text: Bulletin 55 - 301 KHEL Khandelwal Herrmann Electronics Limited Voltage : 20 - 80 Volts Current : 1 Ampere TECHNICAL SPIFICATIONS OF 1 AMPERE SCHOTTKY BARRIER DIODES TYPE 1N5817 TO 1N5819 AND SR120 TO SR180 FEATURES • Low Cost 25.4 MIN • Low Leakage • Low Forward Voltage Drop
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1N5817
1N5819
SR120
SR180
DO-41
UL94V-0
Plot-101,
1n5819 trr
Khandelwal Herrmann Electronics
202E
SR180
1n5817 trr
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27.145 mhz
Abstract: "regenerative receiver" C945 c945 p 23 22n51 GPRC205A C945 application note c945 data 27.145 RC GPRC2062
Text: GPRC2062A 5-FUNCTIONS REMOTE CONTROL DECODER WITH BUILT-IN DC-DC CONVERTER 1. GENERAL DESCRIPTION 2. FEATURES The GPRC2062A is a remote control decoder to decode the Operation voltage Range − 1.2V operation received serial bit-stream data transmitted by the remote
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GPRC2062A
GPRC2062A
GPRC205A,
SPRC2062A
27.145 mhz
"regenerative receiver"
C945
c945 p 23
22n51
GPRC205A
C945 application note
c945 data
27.145 RC
GPRC2062
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SPRC205
Abstract: No abstract text available
Text: SPRC2062A 5-Functions Remote Control Decoder with Built-in DC-DC Converter Preliminary APR. 27, 2004 Version 0.3 SUNPLUS TECHNOLOGY CO. reserves the right to change this documentation without prior notice. Information provided by SUNPLUS TECHNOLOGY CO. is
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SPRC2062A
SPRC205
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diode si 1n 5817
Abstract: 5819 DIODE diode IN 5817 diode 5819 1A DIODE 1N 1N5817 1N5818 1N5819 diode 5817 diode IN 5819
Text: 1N 5817 .1N 5819 SCHOTTKY BARRIER DIODE Features • • • • • • • • Î Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction, majority carrier conduction Guardring for overvoltage protection Low power loss,
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50mvp-p
diode si 1n 5817
5819 DIODE
diode IN 5817
diode 5819
1A DIODE 1N
1N5817
1N5818
1N5819
diode 5817
diode IN 5819
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1N817
Abstract: 1N5817 1N5819 1n5819 data sheet 1N5819 package data sheet for 1N5817 DIODE 1N5819 dc 1N5818 1N5817 Philips
Text: Philips Semiconductors Product specification S ch o ttky b arrier dio des 1N 5817; 1 N 5 818; 1N 5819 FEATURES DESCRIPTION • Low switching losses The 1N5817 to 1N5819 types are Schottky barrier diodes fabricated in planar technology, and encapsulated in SOD81 hermetically sealed glass packages
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1N5817;
1N5818;
1N5819
1N5817
1N5819
711DfiSb
7110fl2b
1N817
1n5819 data sheet
1N5819 package
data sheet for 1N5817
DIODE 1N5819 dc
1N5818
1N5817 Philips
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N5819
Abstract: 1N5319 1N6650-1
Text: 1N 5819-1 &groupid=SD Schottky Web Site Templete ^ S E N S IT R O N _ SEMICONDUCTOR Schottky Diodes PART NUMBER:JAN1 N5819-1 PACKAGE STYLE:DO-41 ALL RATINGS ARE @ Tc = 25 °C UNLESS OTHERWISE SPECIFIED.
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N5819-1
DO-41
1N5319-1
1N6650-1
DO-41
SENRS00008
1N5819-1
N5819
1N5319
1N6650-1
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1N581B
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N 5817 1N5818 1N 5819 A x ia l Lead R e c tifie rs . . em ploying the Schottky Barrier principle in a large area m e ta l-to -s ilic o n power diode. S ta te -o f-th e -a rl geometry features chrom e barrier metal, epitaxial construction
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1N5818
1N5617and1N5819are
1N581B
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SCHOTTKY DIODES CROSS REFERENCE
Abstract: SD 102 M BAT19 BAT29 equivalent 1ss99 BA 5818 SD-101 equivalent BAT29 bat 301 l BAR10
Text: SCHOTTKY DIODES CROSS REFERENCE INDUSTRY PART NUMBER SGS-THOMSON DIRECT REPLACEMENT SGS-THOMSON NEAREST EQUIVALENT INDUSTRY PART NUMBER SGS-THOMSON DIRECT REPLACEMENT SGS-THOMSON NEAREST EQUIVALENT TM M 62/63 1N 5711 1N 5711 LL101 A 1N 5712 1N 5712 LL 103 A.P.C
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BAR11
LL101
BAT47/48
BAT19
BAT29
10/BAT19
10/BAT
SCHOTTKY DIODES CROSS REFERENCE
SD 102 M
BAT29 equivalent
1ss99
BA 5818
SD-101 equivalent
bat 301 l
BAR10
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diode cross reference
Abstract: 939B 1N6677-1 1N935B 1N939B 1N935B-1 1N939B-1 1N945B 1N941B 1N941B-1
Text: AXIAL LEADED DIODES & RECTIFIERS PRODUCT LISTING Military & Commercial Page Number Page N um ber REFERENCES Product Line Summ ary. 4 1N821-1 thru 1N829-1. J.TX.TXV. 11
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1N821-1
1N829-1.
1N935
1N935B
1N939B.
1N935B-1
1N939B-1.
1N4370A-1
1N4372A-1
1N4614
diode cross reference
939B
1N6677-1
1N939B
1N939B-1
1N945B
1N941B
1N941B-1
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BAT19
Abstract: DO-35 C3 BYV 35
Text: THO M SO N MIL ET S P A T I A U X SSE D Bi 1 0 E b 6 7 E Q G O C ma ? 205 • THCMV-<>j,-e% DISCRETE COMPONENTS C3 PRODUCT DESCRIPTION PACKAGE -2 g -2 S 03 O £ <=> . 0£ 5 > -» -O r> O < LU O ys ^ < 75 < LU SCHOHKY SMALL SIGNAL DIODES VRRM = 20 V Cmax =
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diode cross reference
Abstract: JS29 JV13 DIODE JS 8 1N6677-1 1N939B-1 1N945B 1N941B-1 JS51
Text: AXIAL LEADED DIODES & RECTIFIERS PRODUCT LISTING Military & Commercial Page Number Page N u m be r REFERENCES Product Line Sum m ary. 4 1N935B thru
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1N935B
1N939B.
1N935B-1
1N939B-1.
1N941
1N945B.
1N941B
1N4678
1N5518
diode cross reference
JS29
JV13
DIODE JS 8
1N6677-1
1N939B-1
1N945B
1N941B-1
JS51
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IN5711
Abstract: 1N3595DHD 4148 GERMANIUM IN5818 SMALL SIGNAL SCHOTTKY DIODES DO-35 IN270 CB-26 thomson 5ns BYV 200 in3595
Text: S G S-TH O M SO N D | - 712*1237 Ü D a 4 fl?4 THOMSON SEMI CONDUCTORS 0 T~ Y- ° — / ~ o 7 ~ germanium signal diodes Types •o Vr • f @ Vp = IV ■r m ax max min m ax V (mA) {mAJ <k A ) I Case Vr (V) gold bond Tamb = 2 5 °C / V 90 100 IN 270 200 100
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CB-26)
1N3595DHD
CB-102)
/10mA
CB-101)
IN5711
4148 GERMANIUM
IN5818
SMALL SIGNAL SCHOTTKY DIODES DO-35
IN270
CB-26
thomson 5ns
BYV 200
in3595
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LM 358 battery charger schematic
Abstract: IC LM356 LM356 Heat Sinks for TO-220 packages TX-3001 TPS 4339 S/BIP/SCB345100/B/30/10/ferrite ei core 33A
Text: Application Note 15 Practical Switching Regulator Circuits by Brian Huffman O verview A golden power supply that will satisfy every design require ment does not exist. Size, cost, and efficiency are the driving factors for selecting a design, causing each design to be
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1N 5819 diode
Abstract: No abstract text available
Text: 1N5817-1N5819 Vishay Lite-On Power Semiconductor 1 .OA Schottky Barrier Rectifiers Features • S c h o ttk y b a rrie r ch ip • G u a rd ring die c o n s tru c tio n fo r tra n s ie n t p ro te c tio n • H igh s u rg e c a p a b ility • L o w p o w e r loss, hig h e ffic ie n c y
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1N5817-1N5819
D-74025
24-Jun-98
1N 5819 diode
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1N5B19
Abstract: BT 1608C 2222LL TOKIN 449 LM358L L52B regulator Diode 1n5b19 68pH
Text: MIC4575 200kHz Simple 1A Buck Voltage Regulator Preliminary Information General Description Features Fixed 200kHz operation 3.3V, 5V, and adjustable output versions Voltage over specified line and load conditions: Fixed version: ±3% max. output voltage Adjustable version: ±2% max. feedback voltage
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MIC4575
200kHz
MIC4575
IC4575
52kHz
LM2575.
2222LL
4041C
1N5B19
BT 1608C
2222LL
TOKIN 449
LM358L
L52B regulator
Diode 1n5b19
68pH
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